JPWO2021153502A1 - - Google Patents

Info

Publication number
JPWO2021153502A1
JPWO2021153502A1 JP2021574020A JP2021574020A JPWO2021153502A1 JP WO2021153502 A1 JPWO2021153502 A1 JP WO2021153502A1 JP 2021574020 A JP2021574020 A JP 2021574020A JP 2021574020 A JP2021574020 A JP 2021574020A JP WO2021153502 A1 JPWO2021153502 A1 JP WO2021153502A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021574020A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021153502A1 publication Critical patent/JPWO2021153502A1/ja
Priority to JP2024230287A priority Critical patent/JP2025036640A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/129Preparing bulk and homogeneous wafers by polishing
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141Preparation of hydrosols or aqueous dispersions
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/145Preparation of hydroorganosols, organosols or dispersions in an organic medium
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/03Particle morphology depicted by an image obtained by SEM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/54Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2021574020A 2020-01-28 2021-01-25 Pending JPWO2021153502A1 (https=)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024230287A JP2025036640A (ja) 2020-01-28 2024-12-26 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020011471 2020-01-28
PCT/JP2021/002435 WO2021153502A1 (ja) 2020-01-28 2021-01-25 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024230287A Division JP2025036640A (ja) 2020-01-28 2024-12-26 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
JPWO2021153502A1 true JPWO2021153502A1 (https=) 2021-08-05

Family

ID=77079007

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021574020A Pending JPWO2021153502A1 (https=) 2020-01-28 2021-01-25
JP2024230287A Pending JP2025036640A (ja) 2020-01-28 2024-12-26 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024230287A Pending JP2025036640A (ja) 2020-01-28 2024-12-26 シリカ粒子、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Country Status (7)

Country Link
US (1) US20220363554A1 (https=)
EP (1) EP4098615A4 (https=)
JP (2) JPWO2021153502A1 (https=)
KR (1) KR20220131926A (https=)
CN (2) CN118833827A (https=)
TW (1) TWI895337B (https=)
WO (1) WO2021153502A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118974198A (zh) * 2022-03-23 2024-11-15 福吉米株式会社 研磨用组合物及使用其的研磨方法
CN119403760A (zh) * 2022-06-20 2025-02-07 三菱化学株式会社 二氧化硅粒子及其制造方法、硅溶胶、研磨组合物、研磨方法、半导体晶片的制造方法以及半导体器件的制造方法
JP7582551B2 (ja) * 2022-06-20 2024-11-13 三菱ケミカル株式会社 シリカ粒子とその製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JPWO2024122583A1 (https=) * 2022-12-08 2024-06-13

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6374911A (ja) * 1986-09-19 1988-04-05 Shin Etsu Chem Co Ltd 微細球状シリカの製造法
JPH06316407A (ja) * 1993-03-03 1994-11-15 Nissan Chem Ind Ltd シリカゾルの製造方法
JP2007153732A (ja) * 2005-11-10 2007-06-21 Tama Kagaku Kogyo Kk 中性コロイダルシリカの製造方法
JP2008273780A (ja) * 2007-04-27 2008-11-13 Jgc Catalysts & Chemicals Ltd 改質シリカ系ゾルおよびその製造方法
JP2010058985A (ja) * 2008-09-01 2010-03-18 Jgc Catalysts & Chemicals Ltd シリカゾルおよびその製造方法
JP2012006796A (ja) * 2010-06-25 2012-01-12 Fuji Xerox Co Ltd シリカ粒子及びその製造方法
JP2014198649A (ja) * 2013-03-29 2014-10-23 日産化学工業株式会社 シリカゾルの製造方法
CN105731468A (zh) * 2016-03-17 2016-07-06 江苏天恒纳米科技股份有限公司 一种粒径可控硅溶胶的制备方法
JP2018090798A (ja) * 2016-12-02 2018-06-14 日揮触媒化成株式会社 研磨用シリカ系粒子および研磨材

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* Cited by examiner, † Cited by third party
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JPS61209910A (ja) 1985-03-15 1986-09-18 Tama Kagaku Kogyo Kk ポリツシング用コロイダルシリカの製造方法
JPS62260712A (ja) * 1986-05-02 1987-11-13 Toray Ind Inc シリカ粒子の製造法
JP2555475B2 (ja) * 1990-10-16 1996-11-20 工業技術院長 無機質微小球体の製造方法
JPH085657B2 (ja) 1990-11-21 1996-01-24 触媒化成工業株式会社 シリカゾルとその製法
US5425930A (en) * 1993-09-17 1995-06-20 Alliedsignal Inc. Process for forming large silica spheres by low temperature nucleation
JPH08183610A (ja) * 1994-12-27 1996-07-16 Mitsubishi Chem Corp 着色球状シリカの製造法
JP3195569B2 (ja) 1997-08-11 2001-08-06 守 磯 繭型コロイダルシリカの製造方法
JP2003165718A (ja) * 2001-11-27 2003-06-10 Fuso Chemical Co Ltd 無孔質球状シリカ及びその製造方法
JP4968431B2 (ja) * 2006-01-30 2012-07-04 株式会社豊田中央研究所 球状シリカ系メソ多孔体及びその製造方法、並びにそれを用いた塩基触媒
JP4617267B2 (ja) * 2006-03-13 2011-01-19 株式会社トクヤマ 球状シリカ粉末の製造方法
WO2007122930A1 (ja) * 2006-04-20 2007-11-01 Asahi Glass Company, Limited コアシェル型シリカおよびその製造方法
JP2008037700A (ja) * 2006-08-04 2008-02-21 Tokuyama Corp シリカ系複合酸化物粒子集合体およびその製造方法
AU2008260452A1 (en) * 2007-06-04 2008-12-11 Alltech Associates, Inc. Silica particles and methods of making and using the same
JP5348400B2 (ja) * 2008-09-05 2013-11-20 Jsr株式会社 シリカ粒子分散液およびその製造方法
JP2012214340A (ja) * 2011-03-31 2012-11-08 Dainippon Printing Co Ltd シリカ粒子の製造方法
JP5857525B2 (ja) * 2011-08-18 2016-02-10 富士ゼロックス株式会社 シリカ粒子及びその製造方法
US20140319411A1 (en) 2011-11-16 2014-10-30 Nissan Chemical Industries, Ltd. Semiconductor wafer polishing liquid composition
JP6934344B2 (ja) * 2017-07-18 2021-09-15 デンカ株式会社 球状シリカフィラー用粉末及びその製造方法
JP7422481B2 (ja) * 2017-10-23 2024-01-26 株式会社トクヤマ 複合粉体
JP7206695B2 (ja) * 2017-11-10 2023-01-18 三菱ケミカル株式会社 シリカゾル、研磨組成物、シリコンウェーハの研磨方法、シリコンウェーハの製造方法、化学的機械的研磨組成物及び半導体デバイスの製造方法
JP7234536B2 (ja) * 2018-03-26 2023-03-08 三菱ケミカル株式会社 シリカゾルの製造方法
KR102672869B1 (ko) * 2018-03-30 2024-06-05 닛키 쇼쿠바이카세이 가부시키가이샤 실리카 입자 분산액, 연마 조성물 및 실리카 입자 분산액의 제조 방법
JP2020011471A (ja) 2018-07-19 2020-01-23 株式会社Msソリューションズ ガラスフィルム

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6374911A (ja) * 1986-09-19 1988-04-05 Shin Etsu Chem Co Ltd 微細球状シリカの製造法
JPH06316407A (ja) * 1993-03-03 1994-11-15 Nissan Chem Ind Ltd シリカゾルの製造方法
JP2007153732A (ja) * 2005-11-10 2007-06-21 Tama Kagaku Kogyo Kk 中性コロイダルシリカの製造方法
JP2008273780A (ja) * 2007-04-27 2008-11-13 Jgc Catalysts & Chemicals Ltd 改質シリカ系ゾルおよびその製造方法
JP2010058985A (ja) * 2008-09-01 2010-03-18 Jgc Catalysts & Chemicals Ltd シリカゾルおよびその製造方法
JP2012006796A (ja) * 2010-06-25 2012-01-12 Fuji Xerox Co Ltd シリカ粒子及びその製造方法
JP2014198649A (ja) * 2013-03-29 2014-10-23 日産化学工業株式会社 シリカゾルの製造方法
CN105731468A (zh) * 2016-03-17 2016-07-06 江苏天恒纳米科技股份有限公司 一种粒径可控硅溶胶的制备方法
JP2018090798A (ja) * 2016-12-02 2018-06-14 日揮触媒化成株式会社 研磨用シリカ系粒子および研磨材

Also Published As

Publication number Publication date
US20220363554A1 (en) 2022-11-17
TWI895337B (zh) 2025-09-01
CN115023408B (zh) 2024-08-20
CN115023408A (zh) 2022-09-06
EP4098615A1 (en) 2022-12-07
TW202134179A (zh) 2021-09-16
JP2025036640A (ja) 2025-03-14
EP4098615A4 (en) 2023-08-02
KR20220131926A (ko) 2022-09-29
WO2021153502A1 (ja) 2021-08-05
CN118833827A (zh) 2024-10-25

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