KR20250121312A - 실리카 입자, 실리카 입자의 제조 방법, 실리카 졸, 연마 조성물, 연마 방법, 반도체 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법 - Google Patents

실리카 입자, 실리카 입자의 제조 방법, 실리카 졸, 연마 조성물, 연마 방법, 반도체 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법

Info

Publication number
KR20250121312A
KR20250121312A KR1020257018583A KR20257018583A KR20250121312A KR 20250121312 A KR20250121312 A KR 20250121312A KR 1020257018583 A KR1020257018583 A KR 1020257018583A KR 20257018583 A KR20257018583 A KR 20257018583A KR 20250121312 A KR20250121312 A KR 20250121312A
Authority
KR
South Korea
Prior art keywords
silica particles
mass
polishing
content
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257018583A
Other languages
English (en)
Korean (ko)
Inventor
도모히로 가토
다케시 사와이
Original Assignee
미쯔비시 케미컬 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쯔비시 케미컬 주식회사 filed Critical 미쯔비시 케미컬 주식회사
Publication of KR20250121312A publication Critical patent/KR20250121312A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H01L21/304—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/02—Amorphous compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Composite Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020257018583A 2022-12-08 2023-12-06 실리카 입자, 실리카 입자의 제조 방법, 실리카 졸, 연마 조성물, 연마 방법, 반도체 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법 Pending KR20250121312A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022196462 2022-12-08
JPJP-P-2022-196462 2022-12-08
PCT/JP2023/043677 WO2024122583A1 (ja) 2022-12-08 2023-12-06 シリカ粒子、シリカ粒子の製造方法、シリカゾル、研磨組成物、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20250121312A true KR20250121312A (ko) 2025-08-12

Family

ID=91379020

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257018583A Pending KR20250121312A (ko) 2022-12-08 2023-12-06 실리카 입자, 실리카 입자의 제조 방법, 실리카 졸, 연마 조성물, 연마 방법, 반도체 웨이퍼의 제조 방법 및 반도체 디바이스의 제조 방법

Country Status (7)

Country Link
US (1) US20250297136A1 (https=)
EP (1) EP4631913A4 (https=)
JP (1) JPWO2024122583A1 (https=)
KR (1) KR20250121312A (https=)
CN (1) CN120265574A (https=)
TW (1) TW202436223A (https=)
WO (1) WO2024122583A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008015943A1 (fr) 2006-07-31 2008-02-07 Fuso Chemical Co.Ltd. Sol de silice et son procédé de production
JP2010083744A (ja) 2008-09-05 2010-04-15 Jsr Corp シリカ粒子分散液およびその製造方法
JP2018080331A (ja) 2016-11-07 2018-05-24 日揮触媒化成株式会社 研磨用シリカ系粒子および研磨材

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3040310B2 (ja) * 1994-07-04 2000-05-15 信越化学工業株式会社 合成石英ガラスの製造方法
JPH08208214A (ja) * 1995-02-03 1996-08-13 Mitsubishi Chem Corp シリカゲル及びその製造法、並びに合成石英ガラス粉の製造法
JPH08325272A (ja) 1995-05-26 1996-12-10 Mitsubishi Chem Corp 高純度テトラアルコキシシラン及びその製造方法
JP5905767B2 (ja) * 2012-04-17 2016-04-20 多摩化学工業株式会社 中性コロイダルシリカ分散液の分散安定化方法及び分散安定性に優れた中性コロイダルシリカ分散液
US11499070B2 (en) * 2015-01-19 2022-11-15 Fujimi Incorporated Modified colloidal silica and method for producing the same, and polishing agent using the same
TWI762528B (zh) * 2016-12-02 2022-05-01 日商日揮觸媒化成股份有限公司 研磨用氧化矽系粒子及研磨材
JPWO2021153502A1 (https=) * 2020-01-28 2021-08-05
JP2022063814A (ja) * 2020-10-12 2022-04-22 合資会社 ナベショー 合成シリカ粉の製造方法
JP2023004284A (ja) * 2021-06-25 2023-01-17 三菱ケミカル株式会社 シリカ粒子の製造方法、シリカゾルの製造方法及び研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008015943A1 (fr) 2006-07-31 2008-02-07 Fuso Chemical Co.Ltd. Sol de silice et son procédé de production
JP2010083744A (ja) 2008-09-05 2010-04-15 Jsr Corp シリカ粒子分散液およびその製造方法
JP2018080331A (ja) 2016-11-07 2018-05-24 日揮触媒化成株式会社 研磨用シリカ系粒子および研磨材

Also Published As

Publication number Publication date
CN120265574A (zh) 2025-07-04
JPWO2024122583A1 (https=) 2024-06-13
EP4631913A4 (en) 2026-03-04
WO2024122583A1 (ja) 2024-06-13
TW202436223A (zh) 2024-09-16
EP4631913A1 (en) 2025-10-15
US20250297136A1 (en) 2025-09-25

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