KR20190113542A - 땜납 접합 전극 및 땜납 접합 전극의 피막 형성용 구리 합금 타깃 - Google Patents
땜납 접합 전극 및 땜납 접합 전극의 피막 형성용 구리 합금 타깃 Download PDFInfo
- Publication number
- KR20190113542A KR20190113542A KR1020190014382A KR20190014382A KR20190113542A KR 20190113542 A KR20190113542 A KR 20190113542A KR 1020190014382 A KR1020190014382 A KR 1020190014382A KR 20190014382 A KR20190014382 A KR 20190014382A KR 20190113542 A KR20190113542 A KR 20190113542A
- Authority
- KR
- South Korea
- Prior art keywords
- copper alloy
- solder
- mass
- copper
- film
- Prior art date
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 137
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 108
- 239000011248 coating agent Substances 0.000 title abstract description 6
- 238000000576 coating method Methods 0.000 title abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 48
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000004332 silver Substances 0.000 claims abstract description 29
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 25
- 238000004544 sputter deposition Methods 0.000 claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 20
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 15
- 238000007654 immersion Methods 0.000 claims description 6
- 238000010998 test method Methods 0.000 claims description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 5
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 5
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 abstract description 14
- 239000000956 alloy Substances 0.000 abstract description 14
- 230000009467 reduction Effects 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007769 metal material Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 238000005266 casting Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000004904 shortening Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000009916 joint effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910000498 pewter Inorganic materials 0.000 description 1
- 239000010957 pewter Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/08—Alloys with open or closed pores
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2018-062501 | 2018-03-28 | ||
| JP2018062501A JP7014003B2 (ja) | 2018-03-28 | 2018-03-28 | はんだ接合電極およびはんだ接合電極の被膜形成用銅合金ターゲット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190113542A true KR20190113542A (ko) | 2019-10-08 |
| KR102689158B1 KR102689158B1 (ko) | 2024-07-26 |
Family
ID=68113102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190014382A KR102689158B1 (ko) | 2018-03-28 | 2019-02-07 | 땜납 접합 전극 및 땜납 접합 전극의 피막 형성용 구리 합금 타깃 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7014003B2 (zh) |
| KR (1) | KR102689158B1 (zh) |
| CN (1) | CN110317969B (zh) |
| TW (1) | TWI761657B (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57171599A (en) * | 1981-04-13 | 1982-10-22 | Mitsubishi Metal Corp | Low melting point cu-ag system alloy solder with excellent wetting property |
| JPS6224892A (ja) * | 1986-04-03 | 1987-02-02 | Mitsubishi Metal Corp | めれ性の良好な低融点Ｃｕ−Ａｇ系合金ろう材 |
| JP2004043868A (ja) | 2002-07-10 | 2004-02-12 | Hitachi Metals Ltd | 薄膜形成用スパッタリングターゲット材及びその製造方法 |
| WO2016072297A1 (ja) | 2014-11-07 | 2016-05-12 | 住友金属鉱山株式会社 | 銅合金ターゲット |
| JP2016172887A (ja) * | 2015-03-16 | 2016-09-29 | 住友金属鉱山株式会社 | 銅合金ターゲット |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE637059A (zh) * | 1962-09-07 | |||
| JPS57115997A (en) * | 1981-01-09 | 1982-07-19 | Mitsubishi Metal Corp | Low melting point cu-ag alloy brazing filler metal of good wettability |
| WO2011013527A1 (ja) * | 2009-07-30 | 2011-02-03 | 新日鉄マテリアルズ株式会社 | 半導体用ボンディングワイヤー |
| TW201207129A (en) * | 2010-08-05 | 2012-02-16 | jin-yong Wang | Cooper bonding wire used in encapsulation and manufacturing method thereof |
| CN102398123A (zh) * | 2011-09-08 | 2012-04-04 | 云南沃滇科技发展有限公司 | 一种层状复合钎料 |
| KR20150056556A (ko) * | 2012-09-28 | 2015-05-26 | 가부시키가이샤 토쿠리키 혼텐 | 전기·전자기기 용도의 Ag-Pd-Cu-Co 합금 |
| JP6410692B2 (ja) * | 2015-08-28 | 2018-10-24 | 田中電子工業株式会社 | 銅合金ボンディングワイヤ |
| TWI602929B (zh) * | 2017-05-17 | 2017-10-21 | Solder composition |
-
2018
- 2018-03-28 JP JP2018062501A patent/JP7014003B2/ja active Active
-
2019
- 2019-01-21 TW TW108102200A patent/TWI761657B/zh active
- 2019-02-07 KR KR1020190014382A patent/KR102689158B1/ko active IP Right Grant
- 2019-03-28 CN CN201910242445.3A patent/CN110317969B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57171599A (en) * | 1981-04-13 | 1982-10-22 | Mitsubishi Metal Corp | Low melting point cu-ag system alloy solder with excellent wetting property |
| JPS6224892A (ja) * | 1986-04-03 | 1987-02-02 | Mitsubishi Metal Corp | めれ性の良好な低融点Ｃｕ−Ａｇ系合金ろう材 |
| JP2004043868A (ja) | 2002-07-10 | 2004-02-12 | Hitachi Metals Ltd | 薄膜形成用スパッタリングターゲット材及びその製造方法 |
| WO2016072297A1 (ja) | 2014-11-07 | 2016-05-12 | 住友金属鉱山株式会社 | 銅合金ターゲット |
| JP2016172887A (ja) * | 2015-03-16 | 2016-09-29 | 住友金属鉱山株式会社 | 銅合金ターゲット |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7014003B2 (ja) | 2022-02-01 |
| JP2019173094A (ja) | 2019-10-10 |
| CN110317969A (zh) | 2019-10-11 |
| TW201942368A (zh) | 2019-11-01 |
| KR102689158B1 (ko) | 2024-07-26 |
| CN110317969B (zh) | 2022-01-14 |
| TWI761657B (zh) | 2022-04-21 |
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