KR20190015522A - 웨이퍼용 서셉터 - Google Patents
웨이퍼용 서셉터 Download PDFInfo
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- KR20190015522A KR20190015522A KR1020197000319A KR20197000319A KR20190015522A KR 20190015522 A KR20190015522 A KR 20190015522A KR 1020197000319 A KR1020197000319 A KR 1020197000319A KR 20197000319 A KR20197000319 A KR 20197000319A KR 20190015522 A KR20190015522 A KR 20190015522A
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- plate
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- 238000009413 insulation Methods 0.000 claims abstract description 41
- 230000000149 penetrating effect Effects 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 6
- 238000001816 cooling Methods 0.000 abstract description 40
- 239000007789 gas Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 241001584775 Tunga penetrans Species 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
도 2는 도 1의 A-A 단면도이다.
도 3은 도 2의 절연관(30)의 주변의 확대도이다.
도 4는 환형 돌기부(33)의 확대 사시도이다.
도 5는 절연관(30)을 나사 구멍(26)에 부착하는 모습을 나타내는 단면도이다.
도 6은 냉각판(20)의 하면에 블록체(50)를 부착한 경우의 단면도이다.
도 7은 스페이스(28)를 둘러싸는 벽이 테이퍼벽인 경우의 단면 확대도이다.
도 8은 다른 실시형태의 절연관(30)의 주변의 확대도이다.
도 9는 다른 실시형태의 절연관(30)의 주변의 확대도이다.
도 10은 시일 부재 지지부(133)의 확대 사시도이다.
도 11은 시일 부재 지지부(233)의 확대 사시도이다.
Claims (7)
- 웨이퍼를 흡착 가능한 세라믹스제의 플레이트와,
상기 플레이트의 상기 웨이퍼를 배치하는 면과는 반대측의 면에 부착된 도전성 부재와,
상기 플레이트 및 상기 도전성 부재를 관통하는 관통 구멍과,
상기 관통 구멍 중 상기 도전성 부재를 관통하는 도전성 부재 관통 부분에 마련된 나사 구멍과,
상기 도전성 부재에 마련되고, 상기 나사 구멍의 중심축과 교차하는 스토퍼면과,
상기 스토퍼면에 접촉하는 접촉면을 가지고, 상기 나사 구멍에 나사 결합된 절연관과,
상기 절연관의 플레이트 대향면에 돌기형으로 마련된 시일 부재 지지부에 삽입 관통되고, 상기 절연관의 플레이트 대향면과 상기 플레이트 사이에 배치된 절연성의 시일 부재
를 포함하고,
상기 절연관은 상기 절연관의 상기 접촉면이 상기 도전성 부재의 상기 스토퍼면에 맞닿음으로써, 상기 나사 구멍에 그 이상 진입하는 것이 저지되어, 상기 절연관의 상기 시일 부재 지지부의 선단면이 상기 플레이트와 접촉하지 않는 미리 정해진 위치에서 위치 결정되며 상기 시일 부재가 상기 절연관의 상기 플레이트 대향면과 상기 플레이트 사이에서 가압되는, 웨이퍼용 서셉터. - 제1항에 있어서,
상기 절연관의 상기 시일 부재 지지부의 선단면은, 상기 가압된 상기 시일 부재의 단면의 중심보다 상기 플레이트에 가까운 측에 위치하는, 웨이퍼용 서셉터. - 제1항 또는 제2항에 있어서,
상기 절연관은 상기 도전성 부재의 외측으로 연장하는 연장부를 갖고 있는, 웨이퍼용 서셉터. - 제1항 내지 제3항 중 어느 한 항에 있어서,
상기 나사 구멍 중 상기 플레이트측의 개구에는, 상기 가압된 상기 시일 부재가 변형되는 것을 허용하는 스페이스가 마련되는, 웨이퍼용 서셉터. - 제4항에 있어서,
상기 스페이스의 폭은 상기 나사 구멍의 내직경보다 넓게 되어 있는, 웨이퍼용 서셉터. - 제1항 내지 제5항 중 어느 한 항에 있어서,
상기 시일 부재 지지부는 상기 절연관과 중심축이 일치하도록 마련된 환형 돌기부인, 웨이퍼용 서셉터. - 제1항 내지 제6항 중 어느 한 항에 있어서,
상기 나사 구멍에는 나사 풀림 방지 접착제가 도포되는, 웨이퍼용 서셉터.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020217003940A KR102445612B1 (ko) | 2017-05-25 | 2018-05-25 | 웨이퍼용 서셉터 |
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Application Number | Priority Date | Filing Date | Title |
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JP2017103767 | 2017-05-25 | ||
JPJP-P-2017-103767 | 2017-05-25 | ||
PCT/JP2018/020125 WO2018216797A1 (ja) | 2017-05-25 | 2018-05-25 | ウエハ用サセプタ |
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KR1020217003940A Division KR102445612B1 (ko) | 2017-05-25 | 2018-05-25 | 웨이퍼용 서셉터 |
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Publication Number | Publication Date |
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KR20190015522A true KR20190015522A (ko) | 2019-02-13 |
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ID=64396489
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Application Number | Title | Priority Date | Filing Date |
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KR1020197000319A Ceased KR20190015522A (ko) | 2017-05-25 | 2018-05-25 | 웨이퍼용 서셉터 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190131163A1 (ko) |
KR (1) | KR20190015522A (ko) |
CN (1) | CN109478531B (ko) |
TW (1) | TWI749231B (ko) |
WO (1) | WO2018216797A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20240016239A (ko) * | 2022-07-26 | 2024-02-06 | 엔지케이 인슐레이터 엘티디 | 반도체 제조 장치용 부재 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7259765B2 (ja) * | 2017-12-28 | 2023-04-18 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2020077669A (ja) * | 2018-11-05 | 2020-05-21 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7269759B2 (ja) * | 2019-03-12 | 2023-05-09 | 新光電気工業株式会社 | 基板固定装置 |
USD931240S1 (en) * | 2019-07-30 | 2021-09-21 | Applied Materials, Inc. | Substrate support pedestal |
JP7339062B2 (ja) * | 2019-08-09 | 2023-09-05 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
JP7303899B2 (ja) * | 2019-11-25 | 2023-07-05 | 京セラ株式会社 | 試料保持具 |
JP7521903B2 (ja) * | 2020-02-21 | 2024-07-24 | 株式会社巴川コーポレーション | 静電チャック装置 |
TWI747281B (zh) * | 2020-05-11 | 2021-11-21 | 大陸商蘇州雨竹機電有限公司 | 薄膜沉積旋轉盤系統 |
JP7509586B2 (ja) * | 2020-06-17 | 2024-07-02 | 日本特殊陶業株式会社 | 保持装置 |
JP7667638B2 (ja) * | 2020-07-16 | 2025-04-23 | 日本特殊陶業株式会社 | 保持装置 |
US12237200B2 (en) | 2020-07-22 | 2025-02-25 | Applied Materials, Inc. | Lift pin interface in a substrate support |
JP7430617B2 (ja) * | 2020-10-16 | 2024-02-13 | 日本碍子株式会社 | ウエハ載置台 |
JP7511444B2 (ja) * | 2020-10-28 | 2024-07-05 | 日本特殊陶業株式会社 | 保持装置 |
CN114464550A (zh) * | 2020-11-09 | 2022-05-10 | 东京毅力科创株式会社 | 基片处理系统 |
CN112923656B (zh) * | 2021-01-20 | 2021-12-21 | 无锡邑文电子科技有限公司 | 一种适用于半导体加工去胶工艺的冷却、真空密封和绝缘装置 |
JP7698542B2 (ja) * | 2021-09-24 | 2025-06-25 | 日本特殊陶業株式会社 | 保持装置 |
JP7580361B2 (ja) * | 2021-11-10 | 2024-11-11 | 日本碍子株式会社 | ウエハ載置台 |
WO2024004039A1 (ja) * | 2022-06-28 | 2024-01-04 | 日本碍子株式会社 | ウエハ載置台 |
KR20240023224A (ko) * | 2022-08-12 | 2024-02-20 | 엔지케이 인슐레이터 엘티디 | 반도체 제조 장치용 부재 |
WO2024079880A1 (ja) * | 2022-10-14 | 2024-04-18 | 日本碍子株式会社 | ウエハ載置台 |
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US4790258A (en) * | 1987-04-03 | 1988-12-13 | Tegal Corporation | Magnetically coupled wafer lift pins |
JPH11204502A (ja) * | 1998-01-13 | 1999-07-30 | Nkk Corp | 真空処理装置 |
JP3602324B2 (ja) * | 1998-02-17 | 2004-12-15 | アルプス電気株式会社 | プラズマ処理装置 |
JP3993408B2 (ja) * | 2001-10-05 | 2007-10-17 | 株式会社巴川製紙所 | 静電チャック装置、その組立方法および静電チャック装置用部材 |
JP4107643B2 (ja) * | 2002-07-23 | 2008-06-25 | 日本碍子株式会社 | 接合体の製造方法 |
JP5434636B2 (ja) * | 2010-01-29 | 2014-03-05 | 住友電気工業株式会社 | 静電チャックを備えた基板保持体 |
WO2013058970A1 (en) * | 2011-10-20 | 2013-04-25 | Applied Materials, Inc. | Substrate support bushing |
JP6047506B2 (ja) * | 2012-02-08 | 2016-12-21 | 東京エレクトロン株式会社 | 静電チャック装置 |
JP6017328B2 (ja) * | 2013-01-22 | 2016-10-26 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
CN104238158B (zh) * | 2014-09-23 | 2017-02-08 | 深圳市华星光电技术有限公司 | 一种升降装置以及升降系统 |
JP6383389B2 (ja) * | 2016-07-22 | 2018-08-29 | 東京エレクトロン株式会社 | 載置台 |
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2018
- 2018-05-25 TW TW107117926A patent/TWI749231B/zh active
- 2018-05-25 WO PCT/JP2018/020125 patent/WO2018216797A1/ja active Application Filing
- 2018-05-25 KR KR1020197000319A patent/KR20190015522A/ko not_active Ceased
- 2018-05-25 CN CN201880002838.0A patent/CN109478531B/zh active Active
- 2018-12-24 US US16/231,662 patent/US20190131163A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20240016239A (ko) * | 2022-07-26 | 2024-02-06 | 엔지케이 인슐레이터 엘티디 | 반도체 제조 장치용 부재 |
Also Published As
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WO2018216797A1 (ja) | 2018-11-29 |
CN109478531A (zh) | 2019-03-15 |
TW201907514A (zh) | 2019-02-16 |
CN109478531B (zh) | 2023-03-17 |
US20190131163A1 (en) | 2019-05-02 |
TWI749231B (zh) | 2021-12-11 |
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