TW202407859A - 半導體製造裝置用構件 - Google Patents
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Abstract
晶圓載置台10為半導體製造裝置用構件的一例,其具備陶瓷板20、陶瓷板貫通孔24、底板30、底板貫通孔34、絕緣套管50、及套管貫通孔54。套管貫通孔54係將絕緣套管50在上下方向貫通,並與陶瓷板貫通孔24連通。絕緣套管50被插入到底板貫通孔34,其外周面50c透過接著層60與底板貫通孔34的內周面接合在一起。絕緣套管50係除了絕緣套管50的上端部56以外,在絕緣套管50的外周面50c具有至少1個圓環狀的外周槽52。
Description
本發明係有關半導體製造裝置用構件。
以往,已知一種半導體製造裝置用構件,其具備:陶瓷板,內置有電極;及導電性底板,設於陶瓷板下表面側。例如,於專利文獻1揭示了在這樣的半導體製造裝置用構件中,具備:陶瓷板貫通孔,將陶瓷板在厚度方向貫通;底板貫通孔,將底板在厚度方向貫通;絕緣套管,插入到底板貫通孔且外周面透過接著層而接著於底板貫通孔的內周面。絕緣套管具有與陶瓷板為相反側的粗徑部、陶瓷板側的細徑部,且於細徑部與底板貫通孔的間隙填充有接著劑。因此,說明了可將絕緣套管牢固地黏著於底板貫通孔。
[先前技術文獻]
[專利文獻]
[專利文獻1] 日本登錄實用新案第3182120號公報
[發明所欲解決之問題]
然而,在絕緣套管的細徑部周圍塗布接著劑的狀態下插入到底板貫通孔插入時,細徑部的中心軸相對於底板貫通孔的中心軸容易大幅傾斜,會有細徑部周圍的接著劑容易被底板貫通孔刮落之問題。因此,會有接著劑在絕緣套管與底板貫通孔的間隙不能完全填充,而無法牢固地接著的情形。
本發明係為解決如此課題而完成者,其主要目的為在絕緣套管與底板貫通孔的間隙以高填充率填充接著劑。
[解決問題之技術手段]
[1]本發明之半導體製造裝置用構件係具備:
陶瓷板,於上表面具有晶圓載置面,並內置有電極;
陶瓷板貫通孔,將該陶瓷板在上下方向貫通;
導電性的底板,設於該陶瓷板的下表面側;
底板貫通孔,將該底板在上下方向貫通;
絕緣套管,被插入到該底板貫通孔,外周面與該底板貫通孔的內周面透過接著層接合在一起;及
套管貫通孔,將該絕緣套管在上下方向貫通,且與該陶瓷板貫通孔連通;
該半導體製造裝置用構件中,
該絕緣套管係除了該絕緣套管的上端部以外,在該絕緣套管的外周面具有至少1個圓環狀或螺旋狀的外周槽。
該半導體製造裝置用構件中,絕緣套管除了上端部之外,在外周面至少具有1個圓環狀或螺旋狀的外周槽。將絕緣套管插入到底板貫通孔並與其接著時,在絕緣套管的外周面塗布接著劑,在該狀態下插入到底板貫通孔,之後使接著劑固化,作為接著層。絕緣套管係從上端部插入到底板貫通孔,因為於該上端部沒有設置外周槽,所以上端部的外徑並不細。因此,將絕緣套管的上端部開始插入至底板貫通孔時,絕緣套管的中心軸相對於底板貫通孔的中心軸不會大幅傾斜,塗布在絕緣套管的外周面的接著劑不易被底板貫通孔刮落。而且,被刮落的接著劑可停留於外周槽,因而在絕緣套管與底板貫通孔的間隙,可以高填充率填充接著劑。其結果,可將絕緣套管與底板貫通孔確實地接著。
[2]本發明之半導體製造裝置用構件(如該[1]所述之半導體製造裝置用構件)中,該外周槽可為圓環狀的槽,且可在該絕緣套管的外周面設有複數個。在設置複數個圓環狀外周槽的情況,與僅設置1個那樣的外周槽的情況相比,填充在絕緣套管與底板貫通孔的間隙之接著劑的填充率容易變高。
[3]本發明之半導體製造裝置用構件(如該[2]所述之半導體製造裝置用構件)中,該外周槽的數量可為2以上4以下。因為這樣的話,外周槽的數量係較恰當,與外周槽的數量過多的情況相比,可較容易製作絕緣套管。
[4]本發明之半導體製造裝置用構件(如該[1]~[3]中任一項所述之半導體製造裝置用構件)中,該外周槽未設於該絕緣套管的下端部亦可。絕緣套管的下端部即便不具外周槽,接著劑亦容易填充於絕緣套管與底板貫通孔之間。因此,就算省略了在下端部設置外周槽,也可維持絕緣套管與底板貫通孔的接著性。
[5]本發明之半導體製造裝置用構件(如該[4]所述之半導體製造裝置用構件),其中,該絕緣套管的下端部亦可為從該絕緣套管的下端面至既定高度為止的區域,且該既定高度可為該絕緣套管的高度之1/3以上1/2以下。
[6]本發明之半導體製造裝置用構件(如該[1]~[5]中任一項所述之半導體製造裝置用構件)中,該絕緣套管的上端部亦可為從該絕緣套管的上端面至既定長度為止的區域,且該既定長度可為1mm以上3mm以下。
接下來,針對本發明適宜的實施態樣,使用圖式進行說明。圖1係晶圓載置台10的俯視圖,圖2係圖1之A-A剖面圖,圖3係圖2的部分放大圖(一點鏈線的框內的放大圖),圖4係絕緣套管50的立體圖。又,本說明書中,「上」「下」並非表示絕對的位置關係,而是表示相對的位置關係。因此,根據晶圓載置台10的朝向,「上」「下」有時會是「下」「上」,有時會是「左」「右」,而有時會是「前」「後」。
晶圓載置台10為本發明之半導體製造裝置用構件的一個例子,如圖2所示,具備:陶瓷板20、底板30、接合層40、絕緣套管50及氣孔70。
陶瓷板20係氧化鋁燒結體或氮化鋁燒結體等陶瓷製的圓板(例如直徑300mm、厚度5mm)。陶瓷板20的上表面形成為載置晶圓W的晶圓載置面21。陶瓷板20係以接近晶圓載置面21的順序依次內置了靜電電極22及加熱器電極23。如圖1所示,於陶瓷板20的晶圓載置面21,沿著外緣形成環狀的密封環帶21a,並於密封環帶21a的內側整面形成有複數個圓形小突起21b。密封環帶21a及圓形小突起21b為相同高度,其高度為例如數μm~數10μm。將晶圓載置面21之中未設置密封環帶21a或圓形小突起21b的部分,稱為基準面21c。
靜電電極22為平面狀的網狀電極,透過未圖示的供電構件,與外部的直流電源連接。供電構件係與底板30電性絕緣。當於靜電電極22施加直流電壓時,晶圓W係藉由靜電吸附力而被吸附固定在晶圓載置面21(具體而言為密封環帶21a的上表面及圓形小突起21b的上表面),當解除直流電壓的施加時,則對晶圓W的晶圓載置面21的吸附固定被解除。
加熱器電極23係在俯視下橫跨陶瓷板20的整體,從一端至另一端以一筆畫的方式配線的電阻發熱體。於加熱器電極23的一端與另一端,透過未圖示的供電構件,與加熱器電源連接。供電構件係與底板30電性絕緣。加熱器電極23在通電時會發熱,並加熱晶圓載置面21,進而加熱晶圓W。
底板30為導電率及熱傳導率良好的圓板(例如,與陶瓷板20相同的直徑或比其更大的直徑之圓板,厚度25mm)。於底板30的內部,形成有冷媒循環的冷媒流路32。在冷媒流路32流通的冷媒較佳為液體,且較佳為電性絕緣者。就電性絕緣的液體而言,可舉出例如氟系非活性液體等。冷媒流路32係在俯視下底板30整體從一端(入口)至另一端(出口)以一筆畫的方式形成。於冷媒流路32的一端及另一端,分別連接有未圖示的外部冷媒裝置的供給口及回收口。由外部冷媒裝置的供給口往冷媒流路32的一端供給的冷媒,係在通過冷媒流路32後,從冷媒流路32的另一端返回至外部冷媒裝置的回收口,經溫度調整後,再度由供給口往冷媒流路32的一端供給。底板30與射頻(RF)電源連接,可作為RF(射頻;Radio frequency)電極使用。
底板30的材料可舉出例如,金屬材料或金屬與陶瓷的複合材料等。就金屬材料而言,可舉出Al、Ti、Mo或該等的合金等。作為金屬與陶瓷的複合材料,可舉出金屬基複合材料(Metal matrix composite; MMC)或陶瓷基複合材料(Ceramic matrix composite; CMC)等。就這樣的複合材料的具體例而言,可舉出:包含Si、SiC及Ti的材料(亦稱為SiSiCTi)、使Al及/或Si含浸於SiC多孔質體而成的材料、Al
2O
3與TiC的複合材料等。作為底板30的材料,較佳為選擇與陶瓷板20的材料的熱膨脹係數接近者。
接合層40在此處為樹脂接著層,且將陶瓷板20的下表面與底板30的上表面接合。作為樹脂接著層的材料,可舉出例如,環氧樹脂、丙烯樹脂、矽氧樹脂(silicone resin)等絕緣性樹脂。
絕緣套管50被容納在底板貫通孔34。底板貫通孔34係將底板30在上下方向貫通的孔,且以不貫通冷媒流路32的方式設置。絕緣套管50係以電性絕緣材料(例如與陶瓷板20相同的材料)製作的大致圓柱狀構件,且具有沿著絕緣套管50的中心軸將絕緣套管50在上下方向貫通之套管貫通孔54。絕緣套管50的外周面50c係在底板貫通孔34的內周面,透過接著層60而接合在一起。作為接著層60的材料,可舉出例如,環氧樹脂、丙烯樹脂、矽氧樹脂等絕緣性樹脂。圖2及圖3中,雖接著層60顯示了在絕緣套管50的外周面50c與底板貫通孔34的內周面之間無間隙地填充的情況,但也可產生些許間隙。於絕緣套管50的外周面50c,設有複數(此處為2)個圓環狀的外周槽52。各外周槽52設置於除了絕緣套管50的上端部(陶瓷板側的端部)56以外的絕緣套管50的外周面50c。上端部56係從絕緣套管50的上端面(陶瓷板側的端面)50a到既定長度為止的區域。既定長度較佳為1mm以上3mm以下,更佳為1.5mm以上2.5mm以下。此外,外周槽52未被設置在絕緣套管50的下端部58。下端部58係從絕緣套管50的下端面(與陶瓷板20相反側的端面)50b到既定高度為止的區域。既定高度較佳為絕緣套管50的高度的1/3以上1/2以下。
鄰接之外周槽52、52的間隔d(參照圖3)係以較短者為佳,例如3mm以下為佳,2.5mm以下為更佳,2mm以下又更佳。外周槽52的深度係以較深者為佳,例如0.25mm以上為佳,0.5mm以上為更佳,0.7mm以上又更佳。不過,關於外周槽52的深度,若設在絕緣套管50的外周面50c的外周槽52的數量多的話,深度淺亦可。外周槽52的數量雖以多者為佳,但由於過多會令絕緣套管50變得不易製造,所以較佳為2以上4以下。
氣孔70係以陶瓷板貫通孔24、接合層貫通孔44及套管貫通孔54構成。陶瓷板貫通孔24係將陶瓷板20在上下方向(厚度方向)貫通。陶瓷板貫通孔24開口於晶圓載置面21的基準面21c。靜電電極22或加熱器電極23未露出於陶瓷板貫通孔24的內周面。也就是說,陶瓷板貫通孔24的內周面係以陶瓷覆蓋。接合層貫通孔44係將接合層40在上下方向(厚度方向)貫通,並與陶瓷板貫通孔24連通。接合層貫通孔44的內徑比陶瓷板貫通孔24的內徑更大。接合層貫通孔44的緣部位於絕緣套管50的上端面50a。套管貫通孔54係與陶瓷板貫通孔24及接合層貫通孔44連通。套管貫通孔54的內徑比陶瓷板貫通孔24的內徑更大,比接合層貫通孔44的內徑更小。氣孔70被用於將熱傳導氣體供給到晶圓載置面21。
接下來,根據圖5說明晶圓載置台10的製造方法的一個例子。圖5係晶圓載置台10的製程圖。
首先,準備底板30與絕緣套管50。然後,在絕緣套管50的外周面50c塗布黏度高的接著劑65,由絕緣套管50的上端部56插入到底板貫通孔34(圖5A)。
絕緣套管50的上端部56的外徑比形成有外周槽52的部分更大。因此,將絕緣套管50的上端部56開始插入至底板貫通孔34時,上端部56的中心軸不會相對於底板貫通孔34的中心軸大幅傾斜。又,隨著絕緣套管50插入底板貫通孔34,接著劑65的一部分被底板貫通孔34刮落,被刮落的接著劑65係進入外周槽52並停留。因此,在絕緣套管50的上端面50a到達與底板30的上表面一致的位置時,於絕緣套管50的外周面50c與底板貫通孔34的內周面之間隙,以高填充率填充接著劑65。當接著劑65硬化時會成為接著層60(圖5B)。另外,雖圖5A中顯示了從底板30的下方插入絕緣套管50的態樣,亦可將圖5A的上下翻轉,從底板30的上方插入絕緣套管50。
接下來,準備陶瓷板20與接合片80(圖5B)。接合片80係於上下兩面具有接著劑(例如熱硬化性樹脂接著劑)的層。於接合片80,事先設置最終會成為接合層貫通孔44之片貫通孔84。然後,透過接合片80於底板30的上表面積層陶瓷板20。此時,以套管貫通孔54、片貫通孔84與陶瓷板貫通孔24連通的方式配置。接著,在經加熱該積層體的狀態下進行加壓,之後冷卻。藉此,陶瓷板20與底板30藉由接合層40而接合在一起。然後,藉由將陶瓷板貫通孔24、接合層貫通孔44及套管貫通孔54連通而形成氣孔70。結果,晶圓載置台10就形成了(圖5C)。
接著,針對如此構成的晶圓載置台10的使用例進行說明。首先,在未圖示的腔室內設置晶圓載置台10的狀態下,將晶圓W載置在晶圓載置面21。然後,藉由真空泵將腔室內減壓,以調整成既定的真空度,對陶瓷板20的靜電電極22施加直流電壓使靜電吸附力產生,將晶圓W吸附固定在晶圓載置面21(具體而言為密封環帶21a的上表面或圓形小突起21b的上表面)。又,通電於加熱器電極23,令陶瓷板20發熱,將晶圓W加熱到既定溫度。再者,背面氣體(backside gas)從未圖示的貯氣瓶導入到構成氣孔70的套管貫通孔54。作為背面氣體,使用熱傳導氣體(例如He氣體等)。導入氣孔70的背面氣體係被填充並封入晶圓W的背面與晶圓載置面21的基準面21c之間的空間(晶圓W的背面與晶圓載置面21的密封環帶21a、圓形小突起21b及基準面21c所包圍的空間)。由於背面氣體的存在,晶圓W與陶瓷板20的熱傳導能以良好的效率進行。接著,使腔室內成為既定壓力(例如數10~數100Pa)的反應氣體環境,在該狀態下,在設於腔室內的頂棚部分之未圖示的上部電極與晶圓載置台10的底板30之間施加RF電壓,使電漿產生。藉由產生的電漿處理晶圓W的表面。於底板30的冷媒流路32中,冷媒適時地循環。
以上詳述的晶圓載置台10中,絕緣套管50除了上端部56之外,在外周面50c具有圓環狀的外周槽52。將絕緣套管50插入到底板貫通孔34並與其接著時,在絕緣套管50的外周面50c塗布接著劑,並在該狀態下插入到底板貫通孔34,之後使接著劑固化,作為接著層60。絕緣套管50係從上端部56插入到底板貫通孔34,但因為於該上端部56沒有設置外周槽52,所以上端部56的外徑並不細。因此,將絕緣套管50的上端部56開始插入至底板貫通孔34時,絕緣套管50的中心軸相對於底板貫通孔34的中心軸不會大幅傾斜,外周面50c的接著劑不易被底板貫通孔34刮落。再者,被刮落的接著劑可停留於外周槽52,因而在絕緣套管50與底板貫通孔34的間隙,可以高填充率填充接著劑。其結果,可將絕緣套管50與底板貫通孔34確實地接著。
另外,亦可以在該間隙填充之接著劑的上下方向的長度(填充長度)作為指標,來取代在絕緣套管50與底板貫通孔34的間隙所填充之接著劑的填充率。
又,因為在絕緣套管50的外周面50c設有2個外周槽52,與僅設置1個那樣的外周槽52的情況相比,填充在絕緣套管50與底板貫通孔34的間隙之接著劑的填充率容易變高。
再者,由於外周槽52的個數為2個,所以與外周槽52的數量過多的情況相比,可較容易製作絕緣套管50。
此外,外周槽52並未設置在絕緣套管50的下端部58。絕緣套管50的下端部58即便不具外周槽52,接著劑也容易填充於絕緣套管50與底板貫通孔34之間。因此,就算省略了在下端部58設置外周槽52,也可維持絕緣套管50與底板貫通孔34的接著性。
另外,本發明未受限於上述實施態樣,只要屬於本發明之技術範圍,自然能以各種態樣實施。
上述實施態樣中,雖例示出具備2個外周槽52的絕緣套管50,但並無特別侷限於此。例如,絕緣套管50亦可如圖6所示在外周面50c具備1個圓環狀的外周槽52,亦可如圖7所示在外周面50c具備3個圓環狀的外周槽52,亦可如圖8所示在外周面50c具備4個圓環狀的外周槽52。圖6~圖8中,對與上述實施態樣相同的構成要素賦予了相同符號。這樣做也可獲得與上述實施態樣同樣的功效。另外,外周槽52的數量越多,填充在絕緣套管50與底板貫通孔34的間隙之接著劑的填充率會有提高的傾向。又,在外周槽52的數量相同的情況,外周槽52的深度越深,填充在絕緣套管50與底板貫通孔34的間隙之接著劑的填充率會有提高的傾向。
上述實施態樣中,雖於絕緣套管50的外周面50c設置圓環狀的外周槽52,但亦可設置螺旋狀的外周槽。螺旋狀的外周槽亦可設置在絕緣套管50的外周面50c中之除了上端部56及下端部58以外的區域。這樣做也可獲得與上述實施態樣幾乎同樣的功效。
上述實施態樣中,就晶圓載置台10的製造方法而言,將絕緣套管50與底板30的底板貫通孔34接著後,將該底板30與陶瓷板20接著,但並不特別侷限於此。亦可例如,將底板30與陶瓷板20接著後,於底板30的底板貫通孔34接著絕緣套管50。
上述實施態樣中,雖例示出了作為接合層40的樹脂接著層,但並不特別侷限於此。例如,採用金屬接合層來作為接合層40亦可。金屬接合層可使用金屬接合材(例如Al-Mg系接合材或Al-Si-Mg系接合材)並藉由周知的TCB(Thermal compression bonding;熱壓接合)來形成。
上述實施態樣中,雖於陶瓷板20內置有靜電電極22及加熱器電極23,但並不特別侷限於此。亦可例如,於陶瓷板20僅內置有靜電電極22及加熱器電極23中任一者。或者,亦可將加熱器電極23在厚度方向上內置成為二段或二段以上。
上述實施態樣中,雖將陶瓷板貫通孔24、接合層貫通孔44及套管貫通孔54作為氣孔70來利用,但並不特別侷限於此。亦可例如,將陶瓷板貫通孔24、接合層貫通孔44及套管貫通孔54作為升降銷孔來利用。升降銷孔係用以將使晶圓W相對於晶圓載置面21上下移動的升降銷插入穿通的孔。升降銷孔係在將晶圓W以例如3支升降銷進行支持的情況時,會被設置在3處。
本申請案係以2022年8月12日提出專利申請之國際申請PCT/JP2022/030758作為優先權主張的基礎,並藉由引用方式將該案之全部內容皆納入本說明書。
[產業可利用性]
本發明之半導體製造裝置用構件可利用在例如將晶圓以電漿等進行處理的領域。
10:晶圓載置台
20:陶瓷板
21:晶圓載置面
21a:密封環帶
21b:圓形小突起
21c:基準面
22:靜電電極
23:加熱器電極
24:陶瓷板貫通孔
30:底板
32:冷媒流路
34:底板貫通孔
40:接合層
44:接合層貫通孔
50:絕緣套管
50a:上端面
50b:下端面
50c:外周面
52:外周槽
54:套管貫通孔
56:上端部
58:下端部
60:接著層
65:接著劑
70:氣孔
80:接合片
84:片貫通孔
d:間隔
W:晶圓
[圖1]係晶圓載置台10的俯視圖。
[圖2]係圖1之A-A剖面圖。
[圖3]係圖2的部分放大圖。
[圖4]係絕緣套管50的立體圖。
[圖5]圖5A~圖5C係晶圓載置台10的製程圖。
[圖6]係晶圓載置台10之另一例的縱剖面圖的部分放大圖。
[圖7]係晶圓載置台10之另一例的縱剖面圖的部分放大圖。
[圖8]係晶圓載置台10之另一例的縱剖面圖的部分放大圖。
10:晶圓載置台
20:陶瓷板
21:晶圓載置面
22:靜電電極
23:加熱器電極
24:陶瓷板貫通孔
30:底板
32:冷媒流路
34:底板貫通孔
40:接合層
44:接合層貫通孔
50:絕緣套管
50a:上端面
50b:下端面
50c:外周面
52:外周槽
54:套管貫通孔
56:上端部
58:下端部
60:接著層
70:氣孔
d:間隔
Claims (6)
- 一種半導體製造裝置用構件,係具備: 陶瓷板,於上表面具有晶圓載置面,並內置有電極; 陶瓷板貫通孔,將該陶瓷板在上下方向貫通; 導電性的底板,設於該陶瓷板的下表面側; 底板貫通孔,將該底板在上下方向貫通; 絕緣套管,被插入到該底板貫通孔,外周面與該底板貫通孔的內周面透過接著層而接合在一起;及 套管貫通孔,將該絕緣套管在上下方向貫通,且與該陶瓷板貫通孔連通; 該半導體製造裝置用構件中, 該絕緣套管係除了該絕緣套管的上端部以外,在該絕緣套管的外周面具有至少1個圓環狀或螺旋狀的外周槽,該接著層進入該外周槽。
- 如請求項1所述之半導體製造裝置用構件,其中 該外周槽為圓環狀的槽,且在該絕緣套管的外周面設有複數個。
- 如請求項2所述之半導體製造裝置用構件,其中 該外周槽的數量為2以上4以下。
- 如請求項1至3中任一項所述之半導體製造裝置用構件,其中 該外周槽並未設於該絕緣套管的下端部。
- 如請求項4所述之半導體製造裝置用構件,其中 該絕緣套管的下端部係從該絕緣套管的下端面至既定高度為止的區域,且該既定高度為該絕緣套管的高度之1/3以上1/2以下。
- 如請求項1至3中任一項所述之半導體製造裝置用構件,其中 該絕緣套管的上端部係從該絕緣套管的上端面至既定長度為止的區域,且該既定長度為1mm以上3mm以下。
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KR101125885B1 (ko) * | 2007-07-31 | 2012-03-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 감소된 플라즈마 침투 및 아킹을 갖는 정전척을 제공하는 방법 및 장치 |
KR20190015522A (ko) | 2017-05-25 | 2019-02-13 | 엔지케이 인슐레이터 엘티디 | 웨이퍼용 서셉터 |
JP7157822B2 (ja) | 2018-11-30 | 2022-10-20 | 京セラ株式会社 | 試料保持具 |
JP2021132177A (ja) | 2020-02-21 | 2021-09-09 | 株式会社巴川製紙所 | 静電チャック装置 |
-
2022
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- 2022-08-12 KR KR1020237007741A patent/KR20240023224A/ko unknown
- 2022-08-12 JP JP2023513911A patent/JP7356620B1/ja active Active
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2023
- 2023-03-01 US US18/176,562 patent/US20240055240A1/en active Pending
- 2023-06-16 TW TW112122583A patent/TW202407859A/zh unknown
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US20240055240A1 (en) | 2024-02-15 |
KR20240023224A (ko) | 2024-02-20 |
JP7356620B1 (ja) | 2023-10-04 |
WO2024034127A1 (ja) | 2024-02-15 |
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