KR20180135120A - 스퍼터링 타겟 - Google Patents
스퍼터링 타겟 Download PDFInfo
- Publication number
- KR20180135120A KR20180135120A KR1020187036111A KR20187036111A KR20180135120A KR 20180135120 A KR20180135120 A KR 20180135120A KR 1020187036111 A KR1020187036111 A KR 1020187036111A KR 20187036111 A KR20187036111 A KR 20187036111A KR 20180135120 A KR20180135120 A KR 20180135120A
- Authority
- KR
- South Korea
- Prior art keywords
- target
- plate
- sputtering
- target plate
- back plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000004544 sputter deposition Methods 0.000 claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910000679 solder Inorganic materials 0.000 claims description 24
- 238000005476 soldering Methods 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005422 blasting Methods 0.000 claims description 4
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000012634 fragment Substances 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 8
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical group B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910033181 TiB2 Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910017750 AgSn Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021359 Chromium(II) silicide Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 carbide Chemical compound 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462017909P | 2014-06-27 | 2014-06-27 | |
| US62/017,909 | 2014-06-27 | ||
| PCT/EP2015/001298 WO2015197196A1 (de) | 2014-06-27 | 2015-06-26 | Sputtering target |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020167035948A Division KR102111833B1 (ko) | 2014-06-27 | 2015-06-26 | 스퍼터링 타겟 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180135120A true KR20180135120A (ko) | 2018-12-19 |
Family
ID=53717965
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187036111A Withdrawn KR20180135120A (ko) | 2014-06-27 | 2015-06-26 | 스퍼터링 타겟 |
| KR1020167035948A Active KR102111833B1 (ko) | 2014-06-27 | 2015-06-26 | 스퍼터링 타겟 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020167035948A Active KR102111833B1 (ko) | 2014-06-27 | 2015-06-26 | 스퍼터링 타겟 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US10109468B2 (enExample) |
| EP (1) | EP3161180B1 (enExample) |
| JP (1) | JP6567048B2 (enExample) |
| KR (2) | KR20180135120A (enExample) |
| CN (1) | CN106471151B (enExample) |
| BR (1) | BR112016029142A2 (enExample) |
| MX (1) | MX380827B (enExample) |
| RU (1) | RU2696910C2 (enExample) |
| TW (1) | TWI713457B (enExample) |
| WO (1) | WO2015197196A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT15050U1 (de) * | 2015-12-18 | 2016-11-15 | Plansee Composite Mat Gmbh | Beschichtungsquelle mit Strukturierung |
| CN110670030A (zh) * | 2019-09-29 | 2020-01-10 | 洛阳丰联科绑定技术有限公司 | 一种ito拼接型靶材的粘结方法 |
| CN111118459A (zh) * | 2019-12-30 | 2020-05-08 | 有研亿金新材料有限公司 | 一种高性能铁磁性靶材的制备方法 |
| KR102707659B1 (ko) * | 2021-11-17 | 2024-09-19 | 바짐테크놀로지 주식회사 | 스퍼터링 타겟 접합체 |
| CN114434107A (zh) * | 2022-02-15 | 2022-05-06 | 株洲火炬安泰新材料有限公司 | 一种提高ito靶材焊合率的生产加工方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4209375A (en) * | 1979-08-02 | 1980-06-24 | The United States Of America As Represented By The United States Department Of Energy | Sputter target |
| DE2933835C2 (de) * | 1979-08-21 | 1987-02-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Befestigen von in Scheiben- oder Plattenform vorliegenden Targetmaterialien auf Kühlteller für Aufstäubanlagen |
| US4740429A (en) * | 1985-07-22 | 1988-04-26 | Ngk Insulators, Ltd. | Metal-ceramic joined articles |
| JPS62278261A (ja) * | 1986-05-26 | 1987-12-03 | Seiko Epson Corp | スパツタ用タ−ゲツトの製造方法 |
| JPS63216969A (ja) * | 1987-03-05 | 1988-09-09 | Daido Steel Co Ltd | 加工方法 |
| JPS63241167A (ja) | 1987-03-30 | 1988-10-06 | Seiko Epson Corp | スパツタリング用タ−ゲツト |
| RU2091501C1 (ru) * | 1991-04-22 | 1997-09-27 | Акционерное общество открытого типа "Всероссийский алюминиево-магниевый институт" | Способ изготовления мишени для магнетронного распыления из алюминия особой чистоты |
| RU2068459C1 (ru) * | 1991-06-03 | 1996-10-27 | Центральный научно-исследовательский институт технологии судостроения | Способ обработки поверхности изделий из стали и сплавов на основе меди |
| JPH05214518A (ja) * | 1992-02-04 | 1993-08-24 | Hitachi Metals Ltd | スパッタリングターゲットとバッキングプレートの接合体の矯正方法およびスパッタリングターゲット材 |
| US7063773B2 (en) * | 2000-08-17 | 2006-06-20 | Tosoh Smd, Inc. | High purity sputter targets with target end-of-life indication and method of manufacture |
| AT4240U1 (de) | 2000-11-20 | 2001-04-25 | Plansee Ag | Verfahren zur herstellung einer verdampfungsquelle |
| US20050072668A1 (en) * | 2003-10-06 | 2005-04-07 | Heraeus, Inc. | Sputter target having modified surface texture |
| MY138584A (en) * | 2003-10-06 | 2009-07-31 | Heraeus Inc | Sputter target having modified surface texture |
| JP4562400B2 (ja) * | 2004-01-28 | 2010-10-13 | 京セラ株式会社 | 活性金属を含むロウ材を用いた接合体及びその製造方法 |
| RU2305717C2 (ru) * | 2005-11-14 | 2007-09-10 | Государственное образовательное учреждение высшего профессионального образования "Московский государственный институт стали и сплавов" (технологический университет) | Мишень для получения функциональных покрытий и способ ее изготовления |
| SE533395C2 (sv) * | 2007-06-08 | 2010-09-14 | Sandvik Intellectual Property | Sätt att göra PVD-beläggningar |
| EP2072637B1 (en) * | 2007-12-21 | 2018-08-15 | Sandvik Intellectual Property AB | Coated cutting tool and a method of making a coated cutting tool |
| CN101518851B (zh) | 2009-02-19 | 2011-07-20 | 宁波江丰电子材料有限公司 | 靶材与背板的焊接结构及方法 |
| CN101879640B (zh) * | 2009-05-06 | 2012-07-25 | 光洋应用材料科技股份有限公司 | 陶瓷溅镀靶材组件及其焊合方法 |
| EP2484493B1 (en) * | 2009-09-30 | 2021-01-20 | Sintokogio, Ltd. | Shot peening treatment method for steel product |
| CN101745710A (zh) | 2010-01-07 | 2010-06-23 | 宁波江丰电子材料有限公司 | 靶材组件的焊接方法 |
| JP5437919B2 (ja) | 2010-06-04 | 2014-03-12 | 三井金属鉱業株式会社 | Ｉｔｏスパッタリングターゲットおよびその製造方法 |
| CN102039459B (zh) | 2010-11-18 | 2012-09-19 | 宁波江丰电子材料有限公司 | 一种靶材焊接方法 |
| US20130029178A1 (en) | 2011-07-27 | 2013-01-31 | Shih-Ying Chang | Active solder |
-
2015
- 2015-06-26 CN CN201580034987.1A patent/CN106471151B/zh active Active
- 2015-06-26 BR BR112016029142A patent/BR112016029142A2/pt not_active Application Discontinuation
- 2015-06-26 US US15/319,022 patent/US10109468B2/en active Active
- 2015-06-26 JP JP2017519788A patent/JP6567048B2/ja active Active
- 2015-06-26 WO PCT/EP2015/001298 patent/WO2015197196A1/de not_active Ceased
- 2015-06-26 KR KR1020187036111A patent/KR20180135120A/ko not_active Withdrawn
- 2015-06-26 KR KR1020167035948A patent/KR102111833B1/ko active Active
- 2015-06-26 EP EP15741114.1A patent/EP3161180B1/de active Active
- 2015-06-26 RU RU2016147509A patent/RU2696910C2/ru active
- 2015-06-26 MX MX2016016573A patent/MX380827B/es unknown
- 2015-06-29 TW TW104120685A patent/TWI713457B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| RU2016147509A (ru) | 2018-07-27 |
| TWI713457B (zh) | 2020-12-21 |
| US20170133209A1 (en) | 2017-05-11 |
| CN106471151A (zh) | 2017-03-01 |
| MX2016016573A (es) | 2017-08-18 |
| MX380827B (es) | 2025-03-12 |
| EP3161180A1 (de) | 2017-05-03 |
| CN106471151B (zh) | 2019-06-18 |
| WO2015197196A1 (de) | 2015-12-30 |
| RU2696910C2 (ru) | 2019-08-07 |
| BR112016029142A2 (pt) | 2017-08-22 |
| JP2017524831A (ja) | 2017-08-31 |
| JP6567048B2 (ja) | 2019-08-28 |
| EP3161180B1 (de) | 2019-02-06 |
| US10109468B2 (en) | 2018-10-23 |
| TW201615875A (zh) | 2016-05-01 |
| KR102111833B1 (ko) | 2020-05-18 |
| KR20170017936A (ko) | 2017-02-15 |
| RU2016147509A3 (enExample) | 2018-11-15 |
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