KR20180110213A - 국부적으로 가열되는 다-구역 기판 지지부 - Google Patents

국부적으로 가열되는 다-구역 기판 지지부 Download PDF

Info

Publication number
KR20180110213A
KR20180110213A KR1020187028007A KR20187028007A KR20180110213A KR 20180110213 A KR20180110213 A KR 20180110213A KR 1020187028007 A KR1020187028007 A KR 1020187028007A KR 20187028007 A KR20187028007 A KR 20187028007A KR 20180110213 A KR20180110213 A KR 20180110213A
Authority
KR
South Korea
Prior art keywords
heating elements
electrostatic chuck
insulating base
electrode
electrode assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020187028007A
Other languages
English (en)
Korean (ko)
Inventor
마이클 에스. 콕스
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20180110213A publication Critical patent/KR20180110213A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making
    • Y10T29/49083Heater type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • General Induction Heating (AREA)
  • Resistance Heating (AREA)
  • Control Of Resistance Heating (AREA)
KR1020187028007A 2013-08-06 2014-07-25 국부적으로 가열되는 다-구역 기판 지지부 Ceased KR20180110213A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361862866P 2013-08-06 2013-08-06
US61/862,866 2013-08-06
PCT/US2014/048182 WO2015020813A1 (en) 2013-08-06 2014-07-25 Locally heated multi-zone substrate support

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167005977A Division KR101905158B1 (ko) 2013-08-06 2014-07-25 국부적으로 가열되는 다-구역 기판 지지부

Publications (1)

Publication Number Publication Date
KR20180110213A true KR20180110213A (ko) 2018-10-08

Family

ID=52448462

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020187028007A Ceased KR20180110213A (ko) 2013-08-06 2014-07-25 국부적으로 가열되는 다-구역 기판 지지부
KR1020167005977A Active KR101905158B1 (ko) 2013-08-06 2014-07-25 국부적으로 가열되는 다-구역 기판 지지부

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020167005977A Active KR101905158B1 (ko) 2013-08-06 2014-07-25 국부적으로 가열되는 다-구역 기판 지지부

Country Status (6)

Country Link
US (3) US9472434B2 (cg-RX-API-DMAC7.html)
JP (2) JP6441927B2 (cg-RX-API-DMAC7.html)
KR (2) KR20180110213A (cg-RX-API-DMAC7.html)
CN (1) CN105408993A (cg-RX-API-DMAC7.html)
TW (3) TWI641074B (cg-RX-API-DMAC7.html)
WO (1) WO2015020813A1 (cg-RX-API-DMAC7.html)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201436091A (zh) * 2013-01-30 2014-09-16 Kyocera Corp 試料保持具及使用其之電漿蝕刻裝置
WO2015020813A1 (en) * 2013-08-06 2015-02-12 Applied Materials, Inc. Locally heated multi-zone substrate support
JP2016534622A (ja) 2013-08-15 2016-11-04 オブシェストヴォ エス オグラニチェノイ オトヴェツトヴェノスティユ シーメンスOOO Siemens 無線周波数電力結合装置及び当該装置の使用方法
US10236202B2 (en) * 2013-11-11 2019-03-19 Diablo Capital, Inc. System and method for adhering a semiconductive wafer to a mobile electrostatic carrier through a vacuum
US9754809B2 (en) * 2013-11-11 2017-09-05 Western Alliance Bank Tri-modal carrier for a semiconductive wafer
US9460950B2 (en) 2013-12-06 2016-10-04 Applied Materials, Inc. Wafer carrier for smaller wafers and wafer pieces
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
JP6545261B2 (ja) 2014-10-17 2019-07-17 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 付加製造プロセスを使用する、複合材料特性を有するcmpパッド構造
KR102398067B1 (ko) * 2014-11-05 2022-05-13 삼성디스플레이 주식회사 정전 척
JP6129451B1 (ja) * 2015-08-20 2017-05-17 日本碍子株式会社 静電チャックヒータ
US10237916B2 (en) 2015-09-30 2019-03-19 Tokyo Electron Limited Systems and methods for ESC temperature control
US10154542B2 (en) * 2015-10-19 2018-12-11 Watlow Electric Manufacturing Company Composite device with cylindrical anisotropic thermal conductivity
US20170119051A1 (en) * 2015-10-30 2017-05-04 British American Tobacco (Investments) Limited Article for Use with Apparatus for Heating Smokable Material
US20180317554A1 (en) 2015-10-30 2018-11-08 British American Tobacco (Investments) Limited Article for use with apparatus for heating smokable material
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR102329513B1 (ko) * 2016-05-10 2021-11-23 램 리써치 코포레이션 적층된 히터와 히터 전압 입력부들 사이의 연결부들
RU2020134241A (ru) 2016-06-29 2020-11-24 Бритиш Америкэн Тобэкко (Инвестментс) Лимитед Устройство для нагревания курительного материала
KR102664257B1 (ko) 2016-06-29 2024-05-10 니코벤처스 트레이딩 리미티드 흡연가능 물질을 가열하기 위한 장치
KR102581356B1 (ko) 2016-08-30 2023-09-21 삼성전자주식회사 기판 처리 장치의 이상 진단 방법 및 이를 수행하기 위한 장치
CN110235515B (zh) * 2017-02-01 2022-04-29 日本特殊陶业株式会社 保持装置
JP6341457B1 (ja) 2017-03-29 2018-06-13 Toto株式会社 静電チャック
KR101983353B1 (ko) * 2017-04-04 2019-05-29 (주)티티에스 기판 지지대
KR101983344B1 (ko) * 2017-04-04 2019-05-29 (주)티티에스 기판 지지대
US11289355B2 (en) * 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
KR102435888B1 (ko) * 2017-07-04 2022-08-25 삼성전자주식회사 정전 척, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10811296B2 (en) 2017-09-20 2020-10-20 Applied Materials, Inc. Substrate support with dual embedded electrodes
JP7349439B2 (ja) * 2017-11-21 2023-09-22 ワトロー エレクトリック マニュファクチュアリング カンパニー 経路層を持つ複数領域ペデスタルヒーター
DE102017223592B4 (de) * 2017-12-21 2023-11-09 Meyer Burger (Germany) Gmbh System zur elektrisch entkoppelten, homogenen Temperierung einer Elektrode mittels Wärmeleitrohren sowie Bearbeitungsanlage mit einem solchen System
WO2019156975A1 (en) * 2018-02-07 2019-08-15 Atherosys, Inc. Apparatus and method to guide ultrasound acquisition of the peripheral arteries in the transverse plane
US11848177B2 (en) * 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
KR20250028527A (ko) * 2018-04-12 2025-02-28 에이에스엠엘 네델란즈 비.브이. 정전 클램프를 포함하는 장치 및 그 장치의 작동 방법
WO2019212992A1 (en) 2018-04-30 2019-11-07 Atherosys, Inc. Method and apparatus for the automatic detection of atheromas in peripheral arteries
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11430639B2 (en) * 2018-12-13 2022-08-30 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Plasma processing system
KR102871301B1 (ko) * 2018-12-17 2025-10-14 어플라이드 머티어리얼스, 인코포레이티드 국부적 가열에 의해 에칭 깊이를 제어하기 위한 방법들
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP2022520784A (ja) 2019-02-12 2022-04-01 ラム リサーチ コーポレーション セラミックモノリシック本体を備えた静電チャック
US11488796B2 (en) * 2019-04-24 2022-11-01 Applied Materials, Inc. Thermal break for high-frequency antennae
CN112071734B (zh) * 2019-06-11 2023-10-31 中微半导体设备(上海)股份有限公司 绝缘材料窗及其制造方法及电感耦合等离子体处理装置
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
JP2022048089A (ja) * 2020-09-14 2022-03-25 東京エレクトロン株式会社 載置台、基板処理装置及び吸着方法
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
TW202329196A (zh) * 2021-09-17 2023-07-16 日商東京威力科創股份有限公司 電漿處理裝置
KR20230071629A (ko) * 2021-11-16 2023-05-23 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
CN115172231B (zh) * 2022-09-08 2022-11-25 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种带有气氛保护的快速升降温共晶加热台
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63257481A (ja) 1987-04-14 1988-10-25 Abisare:Kk 静電保持装置
JP2582410B2 (ja) * 1988-04-26 1997-02-19 東陶機器株式会社 静電チャック基板
JP3095790B2 (ja) * 1991-01-22 2000-10-10 富士電機株式会社 静電チャック
JPH07106317A (ja) * 1993-10-08 1995-04-21 Sony Corp 試料台
US5646814A (en) 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
JPH08315965A (ja) 1994-09-29 1996-11-29 Tokyo Electron Ltd 加熱装置及びその製造方法、並びに処理装置
US5595241A (en) * 1994-10-07 1997-01-21 Sony Corporation Wafer heating chuck with dual zone backplane heating and segmented clamping member
US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
JP3161310B2 (ja) 1995-12-14 2001-04-25 松下電器産業株式会社 電 池
JP3972379B2 (ja) 1995-12-14 2007-09-05 信越半導体株式会社 加熱炉
JPH09223729A (ja) * 1996-02-19 1997-08-26 Kyocera Corp 静電チャック
US6055150A (en) 1996-05-02 2000-04-25 Applied Materials, Inc. Multi-electrode electrostatic chuck having fuses in hollow cavities
JP3831009B2 (ja) 1996-06-25 2006-10-11 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
JPH11354504A (ja) * 1998-06-08 1999-12-24 Sony Corp ガラス基板処理装置
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP2001035907A (ja) * 1999-07-26 2001-02-09 Ulvac Japan Ltd 吸着装置
ATE491825T1 (de) * 1999-09-29 2011-01-15 Tokyo Electron Ltd Mehrzonenwiderstandsheizung
WO2001058828A1 (en) * 2000-02-07 2001-08-16 Ibiden Co., Ltd. Ceramic substrate for semiconductor production/inspection device
JP2003234262A (ja) * 2000-02-08 2003-08-22 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板
US6678143B2 (en) 2000-12-11 2004-01-13 General Electric Company Electrostatic chuck and method of manufacturing the same
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US20050211385A1 (en) * 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
US6847014B1 (en) * 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
JP2002357838A (ja) 2001-05-31 2002-12-13 Hitachi Industries Co Ltd 基板貼り合わせ方法及びその装置
TW540583U (en) * 2001-08-20 2003-07-01 Helix Technology Inc Vapor deposition device
JP2003179128A (ja) 2001-12-11 2003-06-27 Ngk Spark Plug Co Ltd 静電チャック
JP2003243493A (ja) 2002-02-15 2003-08-29 Taiheiyo Cement Corp 双極型静電チャック
JP4067858B2 (ja) * 2002-04-16 2008-03-26 東京エレクトロン株式会社 Ald成膜装置およびald成膜方法
JP2004001993A (ja) * 2002-04-26 2004-01-08 Iwatani Internatl Corp 粒状ドライアイスの分配供給装置
JP3904986B2 (ja) * 2002-06-26 2007-04-11 京セラ株式会社 ウェハ支持部材
US6780294B1 (en) 2002-08-19 2004-08-24 Set, Tosoh Shield assembly for substrate processing chamber
US6770852B1 (en) * 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control
JP3491637B2 (ja) 2003-04-17 2004-01-26 松下電工株式会社 高周波リレー
JP2004356350A (ja) * 2003-05-28 2004-12-16 Kyocera Corp 静電チャック
JP2005012144A (ja) * 2003-06-23 2005-01-13 Kyocera Corp 静電チャック
WO2005004229A1 (ja) 2003-07-08 2005-01-13 Future Vision Inc. 基板ステージ用静電チャック及びそれに用いる電極ならびにそれらを備えた処理システム
JP4278046B2 (ja) * 2003-11-10 2009-06-10 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 ヒータ機構付き静電チャック
JP2004253799A (ja) * 2004-02-16 2004-09-09 Ibiden Co Ltd 半導体製造・検査装置
JP4684222B2 (ja) 2004-03-19 2011-05-18 株式会社クリエイティブ テクノロジー 双極型静電チャック
JP4761723B2 (ja) * 2004-04-12 2011-08-31 日本碍子株式会社 基板加熱装置
JP4237148B2 (ja) 2005-02-17 2009-03-11 住友大阪セメント株式会社 黒色微粒子分散液とそれを用いた黒色遮光膜及び黒色遮光膜付き基材
US20060096946A1 (en) * 2004-11-10 2006-05-11 General Electric Company Encapsulated wafer processing device and process for making thereof
JP2007088411A (ja) 2005-06-28 2007-04-05 Hitachi High-Technologies Corp 静電吸着装置およびウエハ処理装置ならびにプラズマ処理方法
JP2007106317A (ja) 2005-10-14 2007-04-26 Toyota Motor Corp タンク
JP4825220B2 (ja) 2005-12-06 2011-11-30 株式会社クリエイティブ テクノロジー 静電チャック用電極シート及び静電チャック
JP2007324260A (ja) * 2006-05-31 2007-12-13 Tomoegawa Paper Co Ltd 静電チャック部材および静電チャック装置
JP2008052246A (ja) 2006-07-28 2008-03-06 Olympus Imaging Corp デジタルカメラ
JP2008041993A (ja) * 2006-08-08 2008-02-21 Shinko Electric Ind Co Ltd 静電チャック
US20080062609A1 (en) 2006-08-10 2008-03-13 Shinji Himori Electrostatic chuck device
JP2008227001A (ja) 2007-03-09 2008-09-25 Rohm Co Ltd 赤外線リフレクター及び加熱装置
JP5018244B2 (ja) * 2007-05-30 2012-09-05 住友大阪セメント株式会社 静電チャック
US7667944B2 (en) 2007-06-29 2010-02-23 Praxair Technology, Inc. Polyceramic e-chuck
US7989022B2 (en) 2007-07-20 2011-08-02 Micron Technology, Inc. Methods of processing substrates, electrostatic carriers for retaining substrates for processing, and assemblies comprising electrostatic carriers having substrates electrostatically bonded thereto
JP5112808B2 (ja) 2007-10-15 2013-01-09 筑波精工株式会社 静電型補強装置
JP5307445B2 (ja) * 2008-04-28 2013-10-02 日本碍子株式会社 基板保持体及びその製造方法
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US8730644B2 (en) 2008-07-08 2014-05-20 Creative Technology Corporation Bipolar electrostatic chuck
US8064185B2 (en) 2008-09-05 2011-11-22 Applied Materials, Inc. Electrostatic chuck electrical balancing circuit repair
JP5620090B2 (ja) 2008-12-15 2014-11-05 キヤノンアネルバ株式会社 基板処理装置、熱処理基板の製造方法及び半導体デバイスの製造方法
KR101001454B1 (ko) 2009-01-23 2010-12-14 삼성모바일디스플레이주식회사 정전척 및 이를 구비한 유기전계발광 소자의 제조장치
WO2011081645A2 (en) * 2009-12-15 2011-07-07 Lam Research Corporation Adjusting substrate temperature to improve cd uniformity
JP5423632B2 (ja) * 2010-01-29 2014-02-19 住友大阪セメント株式会社 静電チャック装置
JP5644161B2 (ja) * 2010-04-12 2014-12-24 住友電気工業株式会社 半導体保持用の静電チャックおよびその製造方法
CN103081088B (zh) 2010-08-06 2016-04-06 应用材料公司 静电夹盘和使用静电夹盘的方法
US8546732B2 (en) * 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US20120227886A1 (en) 2011-03-10 2012-09-13 Taipei Semiconductor Manufacturing Company, Ltd. Substrate Assembly Carrier Using Electrostatic Force
WO2012166256A1 (en) 2011-06-02 2012-12-06 Applied Materials, Inc. Electrostatic chuck aln dielectric repair
US9117867B2 (en) 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly
US8624168B2 (en) * 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
CN103843129B (zh) 2011-09-30 2017-03-01 应用材料公司 具有温度控制的静电夹具
US20130086809A1 (en) 2011-10-05 2013-04-11 Agostino Difante Combined handi-hold serving spoon
KR102047001B1 (ko) 2012-10-16 2019-12-03 삼성디스플레이 주식회사 정전 척
WO2015013142A1 (en) * 2013-07-22 2015-01-29 Applied Materials, Inc. An electrostatic chuck for high temperature process applications
WO2015020813A1 (en) * 2013-08-06 2015-02-12 Applied Materials, Inc. Locally heated multi-zone substrate support
US9740111B2 (en) 2014-05-16 2017-08-22 Applied Materials, Inc. Electrostatic carrier for handling substrates for processing
US10978334B2 (en) 2014-09-02 2021-04-13 Applied Materials, Inc. Sealing structure for workpiece to substrate bonding in a processing chamber
US10707110B2 (en) * 2015-11-23 2020-07-07 Lam Research Corporation Matched TCR joule heater designs for electrostatic chucks

Also Published As

Publication number Publication date
KR101905158B1 (ko) 2018-10-08
TW201508861A (zh) 2015-03-01
JP6441927B2 (ja) 2018-12-19
US20150043123A1 (en) 2015-02-12
US9984912B2 (en) 2018-05-29
TWI688038B (zh) 2020-03-11
CN105408993A (zh) 2016-03-16
TW202040744A (zh) 2020-11-01
US20170032995A1 (en) 2017-02-02
KR20160042429A (ko) 2016-04-19
US9735037B2 (en) 2017-08-15
US20180019148A1 (en) 2018-01-18
WO2015020813A1 (en) 2015-02-12
TWI641074B (zh) 2018-11-11
JP2016534556A (ja) 2016-11-04
US9472434B2 (en) 2016-10-18
TW201828404A (zh) 2018-08-01
JP2019047132A (ja) 2019-03-22

Similar Documents

Publication Publication Date Title
KR101905158B1 (ko) 국부적으로 가열되는 다-구역 기판 지지부
KR102471635B1 (ko) 극도의 균일성의 가열식 기판 지지 조립체
TWI637459B (zh) 高溫製程應用上的靜電夾盤
TWI657526B (zh) 用於搬運供加工之基板的靜電載體及製作此靜電載體的方法
US9269600B2 (en) Electrostatic chuck device
JP6968120B2 (ja) 薄い基板をハンドリングするための静電キャリア
JP2024507802A (ja) 異なるセラミックを用いた静電チャック
KR102524609B1 (ko) 반도체 웨이퍼 홀더를 위한 열 디퓨저
JP2004349666A (ja) 静電チャック
KR20220086487A (ko) 정전 척 및 기판 고정 장치
CN100595901C (zh) 一种静电夹盘
KR101463395B1 (ko) 정전척 및 그 제조방법
CN111326468A (zh) 静电吸盘装置
US20250022738A1 (en) Electrostatic chuck and substrate fixing device
KR20230138930A (ko) 세라믹 기판, 세라믹 기판의 제조 방법, 정전 척, 기판 고정 장치, 및 반도체 장치용 패키지
JP2007258607A (ja) 静電チャック
JP2015142100A (ja) 電極内蔵プレートおよび静電チャック

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20180928

Application number text: 1020167005977

Filing date: 20160304

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190517

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20191125

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200524

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20200804

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20200524

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20191125

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I