KR20160005064A - 3-차원(3d) 집적 회로들(ic) 내의 튜닝가능한 다이플렉서들 및 관련 컴포넌트들 및 방법들 - Google Patents

3-차원(3d) 집적 회로들(ic) 내의 튜닝가능한 다이플렉서들 및 관련 컴포넌트들 및 방법들 Download PDF

Info

Publication number
KR20160005064A
KR20160005064A KR1020157033907A KR20157033907A KR20160005064A KR 20160005064 A KR20160005064 A KR 20160005064A KR 1020157033907 A KR1020157033907 A KR 1020157033907A KR 20157033907 A KR20157033907 A KR 20157033907A KR 20160005064 A KR20160005064 A KR 20160005064A
Authority
KR
South Korea
Prior art keywords
inductor
varactor
diplexer
tier
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020157033907A
Other languages
English (en)
Korean (ko)
Inventor
쳉지에 추오
데익 디. 김
제-슝 란
종해 김
마리오 프란시스코 베레즈
창한 윤
데이비드 에프. 베디
로버트 피. 미쿨카
매튜 엠. 노왁
시앙동 창
푸아이 에이치. 시
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20160005064A publication Critical patent/KR20160005064A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/46—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H7/461—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source particularly adapted for use in common antenna systems
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/46—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H7/463—Duplexers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H03H7/256—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a VARACTOR diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H2007/013—Notch or bandstop filters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49016—Antenna or wave energy "plumbing" making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Transceivers (AREA)
  • Filters And Equalizers (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020157033907A 2013-05-06 2014-05-02 3-차원(3d) 집적 회로들(ic) 내의 튜닝가능한 다이플렉서들 및 관련 컴포넌트들 및 방법들 Withdrawn KR20160005064A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/887,568 2013-05-06
US13/887,568 US9634640B2 (en) 2013-05-06 2013-05-06 Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
PCT/US2014/036524 WO2014182556A1 (en) 2013-05-06 2014-05-02 Tunable diplexers in three-dimensional (3d) integrated circuits (ic) (3dic) and related components and methods

Publications (1)

Publication Number Publication Date
KR20160005064A true KR20160005064A (ko) 2016-01-13

Family

ID=50896553

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157033907A Withdrawn KR20160005064A (ko) 2013-05-06 2014-05-02 3-차원(3d) 집적 회로들(ic) 내의 튜닝가능한 다이플렉서들 및 관련 컴포넌트들 및 방법들

Country Status (6)

Country Link
US (2) US9634640B2 (https=)
EP (1) EP2995002A1 (https=)
JP (1) JP2016526287A (https=)
KR (1) KR20160005064A (https=)
CN (1) CN105191123B (https=)
WO (1) WO2014182556A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070200803A1 (en) * 2005-07-27 2007-08-30 Semiconductor Energy Laboratory Co., Ltd. Display device, and driving method and electronic device thereof
US9203373B2 (en) 2013-01-11 2015-12-01 Qualcomm Incorporated Diplexer design using through glass via technology
US9935166B2 (en) 2013-03-15 2018-04-03 Qualcomm Incorporated Capacitor with a dielectric between a via and a plate of the capacitor
US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9264013B2 (en) 2013-06-04 2016-02-16 Qualcomm Incorporated Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods
US9800338B2 (en) * 2014-07-25 2017-10-24 Arris Enterprises Llc Configurable diplex filter with tunable inductors
US10256863B2 (en) 2016-01-11 2019-04-09 Qualcomm Incorporated Monolithic integration of antenna switch and diplexer
US10103703B2 (en) 2016-05-20 2018-10-16 Qualcomm Incorporated Double-sided circuit
JP6881406B2 (ja) * 2018-08-31 2021-06-02 株式会社村田製作所 方向性結合器
US11652468B2 (en) * 2020-07-07 2023-05-16 Qualcomm Incorporated High performance tunable filter
US11342246B2 (en) * 2020-07-21 2022-05-24 Qualcomm Incorporated Multi-terminal integrated passive devices embedded on die and a method for fabricating the multi-terminal integrated passive devices
US11201602B1 (en) * 2020-09-17 2021-12-14 Analog Devices, Inc. Apparatus and methods for tunable filtering
US11770115B2 (en) 2020-10-16 2023-09-26 Qualcomm Incorporated Tunable circuit including integrated filter circuit coupled to variable capacitance, and related integrated circuit (IC) packages and fabrication methods
CN115084068A (zh) 2021-03-12 2022-09-20 京东方科技集团股份有限公司 半导体装置及其制造方法
CN115084069B (zh) 2021-03-12 2025-02-07 京东方科技集团股份有限公司 半导体装置及其制造方法
CN115241163B (zh) * 2021-04-23 2025-03-25 京东方科技集团股份有限公司 可调滤波器及其制备方法

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2757320A (en) * 1953-10-15 1956-07-31 Westinghouse Electric Corp Frequency sensitive control device
US3656162A (en) * 1969-09-19 1972-04-11 Litton Systems Inc Diplexer for radio communication
JPS5291446U (https=) 1975-12-29 1977-07-08
JP3139327B2 (ja) 1995-05-31 2001-02-26 株式会社村田製作所 高周波複合部品
US5548255A (en) 1995-06-23 1996-08-20 Microphase Corporation Compact diplexer connection circuit
JPH0945866A (ja) 1995-08-02 1997-02-14 Hitachi Ltd マイクロ波集積回路
JPH0992539A (ja) 1995-09-22 1997-04-04 Uniden Corp 立体渦巻状インダクタ及びそれを用いた誘導結合フィルタ
EP1909390A2 (en) 1996-09-26 2008-04-09 Matsushita Electric Industrial Co., Ltd. Diplexer, duplexer, and two-channel mobile communications equipment
US5886597A (en) 1997-03-28 1999-03-23 Virginia Tech Intellectual Properties, Inc. Circuit structure including RF/wideband resonant vias
JPH11112264A (ja) * 1997-10-08 1999-04-23 Murata Mfg Co Ltd フィルタ
US6013939A (en) 1997-10-31 2000-01-11 National Scientific Corp. Monolithic inductor with magnetic flux lines guided away from substrate
US6417754B1 (en) * 1997-12-08 2002-07-09 The Regents Of The University Of California Three-dimensional coil inductor
JP3255105B2 (ja) * 1998-01-22 2002-02-12 株式会社村田製作所 高周波複合部品
US6180976B1 (en) 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
JP2001136045A (ja) 1999-08-23 2001-05-18 Murata Mfg Co Ltd 積層型複合電子部品
JP2001119209A (ja) 1999-10-15 2001-04-27 Murata Mfg Co Ltd 積層型フィルタモジュール
KR100316693B1 (ko) 1999-12-22 2001-12-20 박종섭 이동통신 기지국의 ｒｆ블록
JP2002008942A (ja) 2000-06-16 2002-01-11 Fujitsu Ltd コンデンサ装置、コンデンサ装置の製造方法及びコンデンサ装置が実装されたモジュール
KR100860281B1 (ko) 2000-08-04 2008-09-25 미츠비시 마테리알 가부시키가이샤 안테나
KR100382765B1 (ko) 2001-06-15 2003-05-09 삼성전자주식회사 송수신용 수동소자와 그 집적모듈 및 그 제조방법
JP2003014592A (ja) 2001-06-28 2003-01-15 Nippon Shooter Ltd オンライン式ジャグ真空化装置およびその真空化方法
WO2003007379A1 (en) 2001-07-12 2003-01-23 Hitachi, Ltd. Electronic circuit component
US6597258B2 (en) 2001-08-30 2003-07-22 Spectrum Astro High performance diplexer and method
JP2003100553A (ja) 2001-09-26 2003-04-04 Toshiba Corp 受動素子部品及び受動素子内蔵基板
JP3998984B2 (ja) 2002-01-18 2007-10-31 富士通株式会社 回路基板及びその製造方法
JP2003258675A (ja) * 2002-02-27 2003-09-12 Kyocera Corp 通信制御方法
JP4103502B2 (ja) 2002-08-28 2008-06-18 株式会社トッパンＮｅｃサーキットソリューションズ 多層配線板及びその製造方法
US7091589B2 (en) 2002-12-11 2006-08-15 Dai Nippon Printing Co., Ltd. Multilayer wiring board and manufacture method thereof
JP2004200227A (ja) 2002-12-16 2004-07-15 Alps Electric Co Ltd プリントインダクタ
JP2004281847A (ja) * 2003-03-18 2004-10-07 Tdk Corp 積層複合電子部品
JP2004281850A (ja) 2003-03-18 2004-10-07 Tdk Corp 積層複合電子部品
US7044390B2 (en) 2003-06-02 2006-05-16 Stmicroelectronics, Inc. Smart card emulator and related methods using buffering interface
US8046508B2 (en) 2004-04-21 2011-10-25 Stmicroelectronics, Inc. Smart card with self-detachment features and related methods
TWI295089B (en) 2004-12-28 2008-03-21 Ngk Spark Plug Co Wiring substrate and the manufacturing method of the same
JP2006279604A (ja) 2005-03-29 2006-10-12 Tdk Corp 弾性表面波装置
CN101288230A (zh) * 2005-06-08 2008-10-15 加利福尼亚大学董事会 线性可变电压二极管电容器和自适应匹配网络
US7323948B2 (en) 2005-08-23 2008-01-29 International Business Machines Corporation Vertical LC tank device
WO2007061308A1 (en) 2005-11-24 2007-05-31 Technische Universiteit Delft Varactor element and low distortion varactor circuit arrangement
JP5055768B2 (ja) 2006-01-16 2012-10-24 富士通セミコンダクター株式会社 半導体装置及びその製造方法
CN100382065C (zh) 2006-03-31 2008-04-16 北京飞天诚信科技有限公司 基于usb接口的智能卡读写器及其控制方法
US7498918B2 (en) 2006-04-04 2009-03-03 United Microelectronics Corp. Inductor structure
EP1850491A3 (en) 2006-04-26 2012-02-22 Hitachi Metals, Ltd. High-frequency circuit, high-frequency device and communications apparatus
US7843302B2 (en) 2006-05-08 2010-11-30 Ibiden Co., Ltd. Inductor and electric power supply using it
US7825745B1 (en) 2006-09-12 2010-11-02 Rf Magic Inc. Variable bandwidth tunable silicon duplexer
TWI333684B (en) 2006-11-07 2010-11-21 Unimicron Technology Corp Package substrate having embedded capacitor
JP5199275B2 (ja) 2006-12-04 2013-05-15 トムソン ライセンシング ダイプレクサ入力を有するチューニング装置
DE102006058068B4 (de) 2006-12-07 2018-04-05 Infineon Technologies Ag Halbleiterbauelement mit Halbleiterchip und passivem Spulen-Bauelement sowie Verfahren zu dessen Herstellung
JP2008171965A (ja) 2007-01-11 2008-07-24 Fuji Electric Device Technology Co Ltd 超小型電力変換装置
JP2008182340A (ja) 2007-01-23 2008-08-07 Ngk Spark Plug Co Ltd ダイプレクサ及びそれを用いたマルチプレクサ
US7821359B2 (en) 2007-07-09 2010-10-26 John Messalingua Associates, Inc. Band-stop filters
TWI345243B (en) * 2007-08-14 2011-07-11 Ind Tech Res Inst Inter-helix inductor devices
JP4720940B2 (ja) * 2007-10-23 2011-07-13 株式会社村田製作所 積層型電子部品及びその製造方法
JP4605404B2 (ja) * 2007-11-12 2011-01-05 Ｔｄｋ株式会社 電子部品
JP2009159328A (ja) * 2007-12-26 2009-07-16 Ngk Spark Plug Co Ltd マルチプレクサ、トリプレクサ及びダイプレクサ
US20090219908A1 (en) 2008-02-29 2009-09-03 Ahmadreza Rofougaran Method and system for processing signals via diplexers embedded in an integrated circuit package
WO2009118694A1 (en) 2008-03-25 2009-10-01 Nxp B.V. Integrated 3d high density and high quality inductive element
WO2009128047A1 (en) 2008-04-18 2009-10-22 Nxp B.V. High density inductor, having a high quality factor
US8442586B2 (en) 2008-05-08 2013-05-14 Texas Instruments Incorporated Determining USB/ISO interface and power supply voltage in mobile device
EP2175455B1 (en) 2008-10-13 2012-12-12 Vodafone Holding GmbH Method for providing controlled access to a memory card and memory card
EP2401762A1 (en) 2009-03-18 2012-01-04 Agere Systems, Inc. Integrated circuit inductors with reduced magnetic coupling
US7955942B2 (en) 2009-05-18 2011-06-07 Stats Chippac, Ltd. Semiconductor device and method of forming a 3D inductor from prefabricated pillar frame
US8143952B2 (en) 2009-10-08 2012-03-27 Qualcomm Incorporated Three dimensional inductor and transformer
US8344478B2 (en) 2009-10-23 2013-01-01 Maxim Integrated Products, Inc. Inductors having inductor axis parallel to substrate surface
US8391316B2 (en) 2009-11-06 2013-03-05 Broadcom Corporation Front-end system for processing composite wideband signals and method for utilizing same
JP2011159953A (ja) * 2010-01-05 2011-08-18 Fujitsu Ltd 電子回路及び電子機器
US20110248405A1 (en) 2010-04-09 2011-10-13 Qualcomm Incorporated Selective Patterning for Low Cost through Vias
US8384507B2 (en) * 2010-06-01 2013-02-26 Qualcomm Incorporated Through via inductor or transformer in a high-resistance substrate with programmability
US8362591B2 (en) 2010-06-08 2013-01-29 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits and methods of forming the same
WO2012040063A1 (en) 2010-09-23 2012-03-29 Qualcomm Mems Technologies, Inc. Integrated passives and power amplifier
US8405135B2 (en) 2010-10-05 2013-03-26 International Business Machines Corporation 3D via capacitor with a floating conductive plate for improved reliability
JP2012100180A (ja) * 2010-11-05 2012-05-24 Hitachi Media Electoronics Co Ltd チューナブルフィルタ、チューナブルデュプレクサ、及び、それらを用いた移動通信端末
CN102569249B (zh) 2010-12-08 2014-01-22 财团法人工业技术研究院 立体式电感
US8736399B2 (en) 2011-04-06 2014-05-27 M/A-Com Technology Solutions Holdings, Inc. Triplexer topology
JP5780298B2 (ja) 2011-04-18 2015-09-16 株式会社村田製作所 アンテナ装置および通信端末装置
US9002309B2 (en) 2011-05-27 2015-04-07 Qualcomm Incorporated Tunable multi-band receiver
US8803615B2 (en) * 2012-01-23 2014-08-12 Qualcomm Incorporated Impedance matching circuit with tunable notch filters for power amplifier
US20130207745A1 (en) 2012-02-13 2013-08-15 Qualcomm Incorporated 3d rf l-c filters using through glass vias
US20130223412A1 (en) 2012-02-24 2013-08-29 Qualcomm Incorporated Method and system to improve frame early termination success rate
US9203373B2 (en) 2013-01-11 2015-12-01 Qualcomm Incorporated Diplexer design using through glass via technology
US9935166B2 (en) 2013-03-15 2018-04-03 Qualcomm Incorporated Capacitor with a dielectric between a via and a plate of the capacitor
US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9264013B2 (en) 2013-06-04 2016-02-16 Qualcomm Incorporated Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods

Also Published As

Publication number Publication date
US9813043B2 (en) 2017-11-07
WO2014182556A1 (en) 2014-11-13
JP2016526287A (ja) 2016-09-01
US9634640B2 (en) 2017-04-25
US20140327496A1 (en) 2014-11-06
US20160204758A1 (en) 2016-07-14
EP2995002A1 (en) 2016-03-16
CN105191123A (zh) 2015-12-23
CN105191123B (zh) 2019-03-05

Similar Documents

Publication Publication Date Title
US9813043B2 (en) Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9264013B2 (en) Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods
KR101702399B1 (ko) 유리 관통 비아 기술을 이용한 다이플렉서 설계
US9906318B2 (en) Frequency multiplexer
US10256863B2 (en) Monolithic integration of antenna switch and diplexer
US10431558B2 (en) Method and apparatus for back-biased switch transistors
KR102529815B1 (ko) 개선된 pog(passive on glass) 멀티플렉서 성능을 위한 다밀도 mim 커패시터
JP2019507972A (ja) ３ｄガラス貫通ビアフィルタと統合された２ｄ受動オンガラスフィルタを使用するマルチプレクサ構成
WO2017222726A1 (en) Switch device performance improvement through multisided biased shielding
JP6921180B2 (ja) デュアル側面接触キャパシタを形成するための裏面シリサイド化の利用
US9780048B1 (en) Side-assembled passive devices

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20151127

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid