KR20140119714A - 향상된 전하 캐리어들의 분포를 갖는 광활성 장치들 및 그 형성 방법들 - Google Patents

향상된 전하 캐리어들의 분포를 갖는 광활성 장치들 및 그 형성 방법들 Download PDF

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Publication number
KR20140119714A
KR20140119714A KR1020147021211A KR20147021211A KR20140119714A KR 20140119714 A KR20140119714 A KR 20140119714A KR 1020147021211 A KR1020147021211 A KR 1020147021211A KR 20147021211 A KR20147021211 A KR 20147021211A KR 20140119714 A KR20140119714 A KR 20140119714A
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KR
South Korea
Prior art keywords
quantum well
region
well region
barrier
semiconductor material
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KR1020147021211A
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English (en)
Korean (ko)
Inventor
챈탈 아레나
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소이텍
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Publication date
Priority claimed from US13/362,866 external-priority patent/US8471243B1/en
Priority claimed from FR1251158A external-priority patent/FR2986661B1/fr
Application filed by 소이텍 filed Critical 소이텍
Publication of KR20140119714A publication Critical patent/KR20140119714A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1020147021211A 2012-01-31 2012-12-17 향상된 전하 캐리어들의 분포를 갖는 광활성 장치들 및 그 형성 방법들 KR20140119714A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/362,866 2012-01-31
US13/362,866 US8471243B1 (en) 2012-01-31 2012-01-31 Photoactive devices with improved distribution of charge carriers, and methods of forming same
FR1251158A FR2986661B1 (fr) 2012-02-08 2012-02-08 Dispositifs photoactifs avec une repartition amelioree des porteurs de charge, et procedes de formation de ces dispositifs
FR1251158 2012-02-08
PCT/IB2012/002790 WO2013114152A1 (en) 2012-01-31 2012-12-17 Photoactive devices with improved distribution of charge carriers, and methods of forming same

Publications (1)

Publication Number Publication Date
KR20140119714A true KR20140119714A (ko) 2014-10-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147021211A KR20140119714A (ko) 2012-01-31 2012-12-17 향상된 전하 캐리어들의 분포를 갖는 광활성 장치들 및 그 형성 방법들

Country Status (5)

Country Link
JP (1) JP6155478B2 (ja)
KR (1) KR20140119714A (ja)
CN (1) CN104094419A (ja)
DE (1) DE112012005796T5 (ja)
WO (1) WO2013114152A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3004005B1 (fr) 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
JP6433248B2 (ja) * 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
JP6457784B2 (ja) 2014-11-07 2019-01-23 スタンレー電気株式会社 半導体発光素子
JP6433247B2 (ja) 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
JP6433246B2 (ja) 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
DE102015100029A1 (de) 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6651167B2 (ja) 2015-03-23 2020-02-19 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP6387978B2 (ja) * 2016-02-09 2018-09-12 日亜化学工業株式会社 窒化物半導体発光素子
JP6729644B2 (ja) * 2018-08-08 2020-07-22 日亜化学工業株式会社 窒化物半導体発光素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080035865A (ko) * 2006-10-20 2008-04-24 삼성전자주식회사 반도체 발광 소자
KR20100055302A (ko) * 2008-11-17 2010-05-26 삼성엘이디 주식회사 질화물 반도체 발광소자
WO2011061580A1 (en) * 2009-11-18 2011-05-26 S.O.I.Tec Silicon On Insulator Technologies Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4255168B2 (ja) * 1998-06-30 2009-04-15 シャープ株式会社 窒化物半導体の製造方法及び発光素子
JP2001077417A (ja) * 1999-08-31 2001-03-23 Sharp Corp 窒素化合物半導体発光素子の製造方法
JP3498697B2 (ja) * 2000-07-07 2004-02-16 日亜化学工業株式会社 窒化物半導体素子
JP2003031902A (ja) * 2001-07-16 2003-01-31 Denso Corp 半導体レーザ
KR100649749B1 (ko) * 2005-10-25 2006-11-27 삼성전기주식회사 질화물 반도체 발광 소자
JP5003527B2 (ja) * 2008-02-22 2012-08-15 住友電気工業株式会社 Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法
FR2931293B1 (fr) * 2008-05-15 2010-09-03 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure support d'epitaxie et heterostructure correspondante
EP2151852B1 (en) 2008-08-06 2020-01-15 Soitec Relaxation and transfer of strained layers
WO2010036622A1 (en) 2008-09-24 2010-04-01 S.O.I. Tec Silicon On Insulator Technologies Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same
JP5315899B2 (ja) * 2008-09-30 2013-10-16 信越半導体株式会社 発光素子
FR2936903B1 (fr) * 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
EP2345060B1 (en) 2008-10-30 2013-12-04 Soitec Methods of forming layers of semiconductor material having reduced lattice strain and engineered substrates including same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080035865A (ko) * 2006-10-20 2008-04-24 삼성전자주식회사 반도체 발광 소자
KR20100055302A (ko) * 2008-11-17 2010-05-26 삼성엘이디 주식회사 질화물 반도체 발광소자
WO2011061580A1 (en) * 2009-11-18 2011-05-26 S.O.I.Tec Silicon On Insulator Technologies Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods

Also Published As

Publication number Publication date
JP2015506592A (ja) 2015-03-02
CN104094419A (zh) 2014-10-08
WO2013114152A1 (en) 2013-08-08
DE112012005796T5 (de) 2014-10-16
JP6155478B2 (ja) 2017-07-05

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