DE112012005796T5 - Photoaktive Bauelemente mit einer verbesserten Verteilung von Ladungsträgern sowie Verfahren zum Ausbilden derselben - Google Patents

Photoaktive Bauelemente mit einer verbesserten Verteilung von Ladungsträgern sowie Verfahren zum Ausbilden derselben Download PDF

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Publication number
DE112012005796T5
DE112012005796T5 DE112012005796.1T DE112012005796T DE112012005796T5 DE 112012005796 T5 DE112012005796 T5 DE 112012005796T5 DE 112012005796 T DE112012005796 T DE 112012005796T DE 112012005796 T5 DE112012005796 T5 DE 112012005796T5
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Prior art keywords
quantum well
region
well region
boundary
semiconductor material
Prior art date
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Withdrawn
Application number
DE112012005796.1T
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German (de)
English (en)
Inventor
Chantal Arena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
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Soitec SA
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Filing date
Publication date
Priority claimed from US13/362,866 external-priority patent/US8471243B1/en
Priority claimed from FR1251158A external-priority patent/FR2986661B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Publication of DE112012005796T5 publication Critical patent/DE112012005796T5/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE112012005796.1T 2012-01-31 2012-12-17 Photoaktive Bauelemente mit einer verbesserten Verteilung von Ladungsträgern sowie Verfahren zum Ausbilden derselben Withdrawn DE112012005796T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/362,866 2012-01-31
US13/362,866 US8471243B1 (en) 2012-01-31 2012-01-31 Photoactive devices with improved distribution of charge carriers, and methods of forming same
FR1251158A FR2986661B1 (fr) 2012-02-08 2012-02-08 Dispositifs photoactifs avec une repartition amelioree des porteurs de charge, et procedes de formation de ces dispositifs
FR1251158 2012-02-08
PCT/IB2012/002790 WO2013114152A1 (en) 2012-01-31 2012-12-17 Photoactive devices with improved distribution of charge carriers, and methods of forming same

Publications (1)

Publication Number Publication Date
DE112012005796T5 true DE112012005796T5 (de) 2014-10-16

Family

ID=47603854

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012005796.1T Withdrawn DE112012005796T5 (de) 2012-01-31 2012-12-17 Photoaktive Bauelemente mit einer verbesserten Verteilung von Ladungsträgern sowie Verfahren zum Ausbilden derselben

Country Status (5)

Country Link
JP (1) JP6155478B2 (ja)
KR (1) KR20140119714A (ja)
CN (1) CN104094419A (ja)
DE (1) DE112012005796T5 (ja)
WO (1) WO2013114152A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112015005885B4 (de) 2015-01-05 2023-11-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
JP6457784B2 (ja) 2014-11-07 2019-01-23 スタンレー電気株式会社 半導体発光素子
JP6433247B2 (ja) 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
JP6433248B2 (ja) 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
JP6433246B2 (ja) 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
JP6651167B2 (ja) 2015-03-23 2020-02-19 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP6387978B2 (ja) * 2016-02-09 2018-09-12 日亜化学工業株式会社 窒化物半導体発光素子
JP6729644B2 (ja) * 2018-08-08 2020-07-22 日亜化学工業株式会社 窒化物半導体発光素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4255168B2 (ja) * 1998-06-30 2009-04-15 シャープ株式会社 窒化物半導体の製造方法及び発光素子
JP2001077417A (ja) * 1999-08-31 2001-03-23 Sharp Corp 窒素化合物半導体発光素子の製造方法
JP3498697B2 (ja) * 2000-07-07 2004-02-16 日亜化学工業株式会社 窒化物半導体素子
JP2003031902A (ja) * 2001-07-16 2003-01-31 Denso Corp 半導体レーザ
KR100649749B1 (ko) * 2005-10-25 2006-11-27 삼성전기주식회사 질화물 반도체 발광 소자
KR20080035865A (ko) * 2006-10-20 2008-04-24 삼성전자주식회사 반도체 발광 소자
JP5003527B2 (ja) * 2008-02-22 2012-08-15 住友電気工業株式会社 Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法
FR2931293B1 (fr) * 2008-05-15 2010-09-03 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure support d'epitaxie et heterostructure correspondante
EP2151852B1 (en) 2008-08-06 2020-01-15 Soitec Relaxation and transfer of strained layers
EP2329517A1 (en) 2008-09-24 2011-06-08 S.O.I.Tec Silicon on Insulator Technologies Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same
JP5315899B2 (ja) * 2008-09-30 2013-10-16 信越半導体株式会社 発光素子
FR2936903B1 (fr) * 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
JP5907730B2 (ja) 2008-10-30 2016-04-26 エス・オー・アイ・テック・シリコン・オン・インシュレーター・テクノロジーズ 低減した格子ひずみを備えた半導体材料、同様に包含する半導体構造体、デバイス、および、加工された基板を製造する方法
KR101228983B1 (ko) * 2008-11-17 2013-02-04 삼성전자주식회사 질화물 반도체 발광소자
CN102741999B (zh) * 2009-11-18 2015-07-15 Soitec公司 使用玻璃键合层制造半导体结构和器件的方法,和用所述方法形成的半导体结构和器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112015005885B4 (de) 2015-01-05 2023-11-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement

Also Published As

Publication number Publication date
WO2013114152A1 (en) 2013-08-08
JP6155478B2 (ja) 2017-07-05
KR20140119714A (ko) 2014-10-10
JP2015506592A (ja) 2015-03-02
CN104094419A (zh) 2014-10-08

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee