CN104094419A - 具有电荷载流子的改进分布的光敏器件及其形成方法 - Google Patents

具有电荷载流子的改进分布的光敏器件及其形成方法 Download PDF

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Publication number
CN104094419A
CN104094419A CN201280068513.5A CN201280068513A CN104094419A CN 104094419 A CN104094419 A CN 104094419A CN 201280068513 A CN201280068513 A CN 201280068513A CN 104094419 A CN104094419 A CN 104094419A
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CN
China
Prior art keywords
well region
quantum well
barrier
region
quantum
Prior art date
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Pending
Application number
CN201280068513.5A
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English (en)
Chinese (zh)
Inventor
尚塔尔·艾尔纳
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Soitec SA
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Soitec SA
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Filing date
Publication date
Priority claimed from US13/362,866 external-priority patent/US8471243B1/en
Priority claimed from FR1251158A external-priority patent/FR2986661B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Publication of CN104094419A publication Critical patent/CN104094419A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
CN201280068513.5A 2012-01-31 2012-12-17 具有电荷载流子的改进分布的光敏器件及其形成方法 Pending CN104094419A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/362,866 US8471243B1 (en) 2012-01-31 2012-01-31 Photoactive devices with improved distribution of charge carriers, and methods of forming same
US13/362,866 2012-01-31
FR1251158 2012-02-08
FR1251158A FR2986661B1 (fr) 2012-02-08 2012-02-08 Dispositifs photoactifs avec une repartition amelioree des porteurs de charge, et procedes de formation de ces dispositifs
PCT/IB2012/002790 WO2013114152A1 (en) 2012-01-31 2012-12-17 Photoactive devices with improved distribution of charge carriers, and methods of forming same

Publications (1)

Publication Number Publication Date
CN104094419A true CN104094419A (zh) 2014-10-08

Family

ID=47603854

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280068513.5A Pending CN104094419A (zh) 2012-01-31 2012-12-17 具有电荷载流子的改进分布的光敏器件及其形成方法

Country Status (5)

Country Link
JP (1) JP6155478B2 (ja)
KR (1) KR20140119714A (ja)
CN (1) CN104094419A (ja)
DE (1) DE112012005796T5 (ja)
WO (1) WO2013114152A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
JP6433248B2 (ja) 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
JP6433247B2 (ja) 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
JP6433246B2 (ja) 2014-11-07 2018-12-05 スタンレー電気株式会社 半導体発光素子
JP6457784B2 (ja) 2014-11-07 2019-01-23 スタンレー電気株式会社 半導体発光素子
DE102015100029A1 (de) 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6651167B2 (ja) 2015-03-23 2020-02-19 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP6387978B2 (ja) * 2016-02-09 2018-09-12 日亜化学工業株式会社 窒化物半導体発光素子
JP6729644B2 (ja) * 2018-08-08 2020-07-22 日亜化学工業株式会社 窒化物半導体発光素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080093593A1 (en) * 2006-10-20 2008-04-24 Samsung Electronics Co., Ltd Semiconductor light emitting device
CN101515700A (zh) * 2008-02-22 2009-08-26 住友电气工业株式会社 Iii族氮化物发光器件及制造iii族氮化物基半导体发光器件的方法
US20100025728A1 (en) * 2008-05-15 2010-02-04 Bruce Faure Relaxation and transfer of strained layers
CN101714505A (zh) * 2008-10-07 2010-05-26 硅绝缘体技术有限公司 应用硬化剂对应变材料层的松弛
CN102113090A (zh) * 2008-08-06 2011-06-29 硅绝缘体技术有限公司 应变层的松弛与转移

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Publication number Priority date Publication date Assignee Title
JP4255168B2 (ja) * 1998-06-30 2009-04-15 シャープ株式会社 窒化物半導体の製造方法及び発光素子
JP2001077417A (ja) * 1999-08-31 2001-03-23 Sharp Corp 窒素化合物半導体発光素子の製造方法
JP3498697B2 (ja) * 2000-07-07 2004-02-16 日亜化学工業株式会社 窒化物半導体素子
JP2003031902A (ja) * 2001-07-16 2003-01-31 Denso Corp 半導体レーザ
KR100649749B1 (ko) * 2005-10-25 2006-11-27 삼성전기주식회사 질화물 반도체 발광 소자
KR20110063773A (ko) 2008-09-24 2011-06-14 에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스 릴랙싱된 반도체 재료층들을 형성하는 방법들, 반도체 구조들, 디바이스들 및 그를 포함하는 엔지니어링된 기판들
JP5315899B2 (ja) * 2008-09-30 2013-10-16 信越半導体株式会社 発光素子
CN102203904B (zh) 2008-10-30 2013-11-20 S.O.I.探测硅绝缘技术公司 形成具有减小的晶格应变的半导体材料层、半导体结构、装置的方法及包含具有减小的晶格应变的半导体材料层、半导体结构、装置的工程衬底
KR101228983B1 (ko) * 2008-11-17 2013-02-04 삼성전자주식회사 질화물 반도체 발광소자
JP6028280B2 (ja) * 2009-11-18 2016-11-16 ソイテックＳｏｉｔｅｃ 半導体構造又は半導体素子を製造する方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080093593A1 (en) * 2006-10-20 2008-04-24 Samsung Electronics Co., Ltd Semiconductor light emitting device
CN101515700A (zh) * 2008-02-22 2009-08-26 住友电气工业株式会社 Iii族氮化物发光器件及制造iii族氮化物基半导体发光器件的方法
US20100025728A1 (en) * 2008-05-15 2010-02-04 Bruce Faure Relaxation and transfer of strained layers
CN102113090A (zh) * 2008-08-06 2011-06-29 硅绝缘体技术有限公司 应变层的松弛与转移
CN101714505A (zh) * 2008-10-07 2010-05-26 硅绝缘体技术有限公司 应用硬化剂对应变材料层的松弛

Also Published As

Publication number Publication date
WO2013114152A1 (en) 2013-08-08
KR20140119714A (ko) 2014-10-10
JP2015506592A (ja) 2015-03-02
DE112012005796T5 (de) 2014-10-16
JP6155478B2 (ja) 2017-07-05

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Application publication date: 20141008