CN104094419A - Photoactive devices with improved distribution of charge carriers, and methods of forming same - Google Patents
Photoactive devices with improved distribution of charge carriers, and methods of forming same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
Radiation-emitting semiconductor devices include a first base region comprising an n-type III-V semiconductor material, a second base region comprising a p-type III-V semiconductor material, and a multi-quantum well structure disposed between the first base region and the second base region. The multi-quantum well structure includes at least three quantum well regions and at least two barrier regions. An electron hole energy barrier between a third of the quantum well regions and a second of the quantum well regions is less than an electron hole energy barrier between the second of the quantum well regions and a first of the quantum well regions. Methods of forming such devices include sequentially epitaxially depositing layers of such a multi-quantum well structure, and selecting a composition and configuration of the layers such that the electron hole energy barriers vary across the multi-quantum well structure.
Description
Technical field
Embodiments of the present invention relate generally to comprises the light-sensitive device of III-V semi-conducting material and the method that forms such light-sensitive device.
Background technology
Light-sensitive device is configured for the device that converts electric energy to electromagnetic radiation or electromagnetic radiation is converted to electric energy.Light-sensitive device includes but not limited to light-emitting diode (LED), semiconductor laser, photoelectric detector and solar cell.Such light-sensitive device usually comprises one or more plane layers of III-V semi-conducting material.III-V semi-conducting material is mainly by one or more elements (B, Al, Ga, In and Tl) of the IIIA family from periodic table and the material that forms from one or more elements (N, P, As, Sb and Bi) of the VA family of periodic table.The plane layer of III-V semi-conducting material can be crystalline solid, and can comprise the monocrystal of III-V semi-conducting material.
The layer of the III-V semi-conducting material of crystallization usually comprises the defect of some in the lattice (lattice) of III-V semi-conducting material.These defects in crystal structure can comprise for example point defect and line defect (for example, line dislocation).Such defect is unfavorable to the performance of the light-sensitive device of manufacture on the layer of III-V semi-conducting material or in layer.
Additionally, lip-deep epitaxial growth for the manufacture of the current known method relate generally to III-V semi-conducting material of the layer of the III-V semi-conducting material of crystallization at the bottom of back lining, at the bottom of described back lining, have be similar to but somewhat different than the lattice of the lattice of the III-V semi-conducting material of crystallization.As a result, along with the layer growth of the III-V semi-conducting material of crystallization is on different back lining bottom materials, the mechanically strain of lattice of the III-V semi-conducting material of crystallization.Result as this strain, along with III-V semi-conducting material layer thickness at growing period, increase, stress in the layer of III-V semi-conducting material can increase, until under certain critical thickness, such as the such defect of dislocation, become actively favourable and be formed in the layer of III-V semi-conducting material with till alleviating moulding stress wherein.
In view of above, be difficult to be manufactured on the relatively thick layer of III-V semi-conducting material of the crystallization of the defect wherein with relatively low concentration degree.
Light-sensitive device can include source region, and described active area comprises many quantum well region, and wherein each can comprise the layer of III-V semi-conducting material.Quantum well region can be by barrier region and separated from one another, and described barrier region can comprise the layer still with the component different with respect to quantum well region of III-V semi-conducting material equally.
At least in some III-V semi-conducting material, between electronics and the mobility of hole (empty electron orbit), there is difference.In other words, electronics can be by III-V semi-conducting material with respect to hole relative to more easily moving.In this species diversity aspect the mobility between electronics and hole, can cause the non-uniform Distribution in electronics and the hole active area at light-sensitive device.People such as X.Ni, Reduction of Efficiency Droop in InGaN Light Emitting Diodes by Coupled Quantum Wells, Applied Physics Letters, Vol.93, in pg.171113 (2008) and people such as C.H.Wang, Efficiency Droop Alleviation in InGaN/GaN Light-Emitting Diodes by Graded-Thickness Multiple Quantum Wells, Applied Physics Letters, Vol.97, pg.181101 (2010) has discussed this phenomenon in more detail.
Summary of the invention
In some embodiments, the present invention includes the semiconductor device of emitted radiation, it comprises: the first basal area, and this first basal area comprises N-shaped III-V semi-conducting material; The second basal area, this second basal area comprises p-type III-V semi-conducting material; And multi-quantum pit structure, this multi-quantum pit structure is disposed between the first basal area and the second basal area.Multi-quantum pit structure comprises at least three quantum well region and at least two barrier regions.The first barrier region at least two barrier regions is disposed between the first quantum well region and the second quantum well region at least three quantum well region.The second barrier region at least two barrier regions is disposed between the second quantum well region and the 3rd quantum well region at least three quantum well region.The first quantum well region is than the 3rd more close the first basal area in quantum well region, and the 3rd quantum well region is than the 3rd more close the second basal area in quantum well region.Each in the first quantum well region, the second quantum well region and the 3rd quantum well region has the well region thickness at least about 2 nanometers in the direction of extending between the first basal area and the second basal area, and in each direction of extending between the first basal area and the second basal area in the first barrier region and the second barrier region, has each the barrier region thickness being more than or equal in well region thickness.And the hole energy barrier between the 3rd quantum well region and the second quantum well region is less than the hole energy barrier between the second quantum well region and the first quantum well region.
In additional execution mode, the present invention includes the device that comprises at least one light-emitting diode (LED).This LED comprises: the first basal area, and this first basal area comprises N-shaped III-V semi-conducting material; The second basal area, this second basal area comprises p-type III-V semi-conducting material; And multi-quantum pit structure, this multi-quantum pit structure is disposed between the first basal area and the second basal area.Multi-quantum pit structure comprises at least three quantum well region and at least two barrier regions.The first barrier region at least two barrier regions is disposed between the first quantum well region and the second quantum well region at least three quantum well region, and the second barrier region at least two barrier regions is disposed between the second quantum well region and the 3rd quantum well region at least three quantum well region.The first quantum well region is than the 3rd more close the first basal area in quantum well region, and the 3rd quantum well region is than the 3rd more close the second basal area in quantum well region.Each in the first quantum well region, the second quantum well region and the 3rd quantum well region comprises In
xga
1-xn and there is the well region thickness at least about 2 nanometers in the direction of extending between the first basal area and the second basal area.Each in the first barrier region and the second barrier region comprises In
yga
1-yn, wherein y is at least about 0.05, and in the direction of extending between the first basal area and the second basal area, have be more than or equal in well region thickness each and at least about the barrier region thickness of 2 nanometers.Hole energy barrier between the 3rd quantum well region and the second quantum well region is less than the hole energy barrier between the second quantum well region and the first quantum well region.
In other again execution mode, the present invention includes the method for the device that forms emitted radiation.According to such method, can on substrate, sequentially extension deposit a plurality of III-V body of semiconductor material to form multi-quantum pit structure, this multi-quantum pit structure comprise be arranged in the first barrier region between the first quantum well region and the second quantum well region and be arranged in the second quantum well region and the 3rd quantum well region between the second barrier region.Can form each in the first quantum well region, the second quantum well region and the 3rd quantum well region to there is the well region thickness at least about 2 nanometers.Can form each in the first barrier region and the second barrier region to there is each the barrier region thickness being more than or equal in well region thickness.Additionally, can select each the component in the first quantum well region, the second quantum well region and the 3rd quantum well region, make the hole energy barrier between the 3rd quantum well region and the second quantum well region be less than the hole energy barrier between the second quantum well region and the first quantum well region.
In other execution mode, the present invention includes the method for the device that forms emitted radiation.According to such method, a plurality of openings that run through strained semiconductor material layer on strain relaxation layer, have been formed.Strained semiconductor material and strain relaxation layer are heat-treated to cause the deformation of strain relaxation layer and relaxing to form at least one individuality of lax semi-conducting material of strained semiconductor material.On at least one individuality of lax semi-conducting material, sequentially extension deposit a plurality of III-V body of semiconductor material to form multi-quantum pit structure, this multi-quantum pit structure comprise be arranged in the first barrier region between the first quantum well region and the second quantum well region and be arranged in described the second quantum well region and the 3rd quantum well region between the second barrier region.Form each in the first quantum well region, the second quantum well region and the 3rd quantum well region to there is the well region thickness at least about 2 nanometers.Form each in the first barrier region and the second barrier region to there is each the barrier region thickness being more than or equal in well region thickness.Select each the component in the first quantum well region, the second quantum well region and the 3rd quantum well region, make the hole energy barrier between the 3rd quantum well region and the second quantum well region be less than the hole energy barrier between the second quantum well region and the first quantum well region.
Accompanying drawing explanation
Although this specification with particularly point out and obviously the claimed claim that is considered to embodiments of the present invention finish; but when reading in combination with accompanying drawing; can from embodiment below, more easily find out the advantage of embodiments of the present invention, in the accompanying drawings:
Fig. 1 be emitted radiation semiconductor device simplification sectional view and for the corresponding energy band diagram of this device;
Fig. 2 to Fig. 5 is used to illustration and according to embodiment of the present disclosure, is used to form the method for the semiconductor device of emitted radiation;
Fig. 2 is the sectional view of the simplification of the strained semiconductor material layer on the strain relaxation layer in base substrate;
Fig. 3 is the cross section exemplified with the such simplification of the cross section of similar Fig. 2 of a plurality of openings that runs through strained semiconductor material layer;
Fig. 4 is the sectional view exemplified with the such simplification of the sectional view that is similar to Fig. 2 and Fig. 3 of body that makes the lax formed lax semi-conducting material of strained semiconductor material under the assistance by strain relaxation layer; And
Fig. 5 is the simplification sectional view that is arranged in the semiconductor device of the emitted radiation on the body that is similar to those the such lax semi-conducting materials shown in Fig. 4.
Embodiment
The diagram that presented is herein not intended to the actual view into any certain material, semiconductor structure or device or method, and is to be only used to describe idealized expression of the present invention.Additionally, between figure, total element can keep identical numerical value name.
As used herein, term " III-V semi-conducting material " represents and comprises mainly by one or more elements (B, Al, Ga, In and Tl) of the IIIA family from periodic table and any material of forming from one or more elements (N, P, As, Sb and Bi) of the VA family of periodic table.
As used herein, term " critical thickness " when for materials'use, the defect that means to form in material (such as dislocation) the actively favourable maximum ga(u)ge that becomes on it.
As used herein, term " epitaxial loayer of material " means the layer of material, and it is that the monocrystal of material and its have been formed and make monocrystal show known crystal orientation at least substantially.
As used herein, term " growth lattice parameter ", when epitaxial loayer for semi-conducting material is used, means by the layer of semi-conducting material along with the layer of semi-conducting material is grown to extension and the average lattice parameter of showing at rising temperature.
As used herein, term " lattice strain ", when the layer for material is used, means the strain of lattice at least substantially parallel direction of the plane of the layer with material, and can compression strain or elongation strain.Similarly, term " average lattice parameter ", when the layer for material is used, means the average lattice parameter at least substantially parallel dimension of the plane of the layer with material.
Similarly, term " strain " is used to refer to lattice for example, from the normal separation distortion (, stretching or compression) of the material for such, makes its spacing of lattice be different from material such in the lax crystal of homogeneity common run into.
Embodiment of the present disclosure comprises light-sensitive device, such as the structure of emitted radiation (for example, LED), it comprises the multi-quantum pit structure with band structure, and described band structure is customized at the operating period of light-sensitive device leap multi-quantum pit structure improved hole distribution is provided.
Fig. 1 is exemplified with the illustrative embodiments of the semiconductor device 100 of emitted radiation of the present disclosure.For example, semiconductor device 100 can comprise LED.On the semiconductor device 100 of Fig. 1, show the energy band diagram of the simplification of being shown by semiconductor device 100.Different districts in band structure aim at respectively they corresponding to semiconductor device 100 district.
As shown in fig. 1, the semiconductor device 100 of emitted radiation comprise the first basal area 102, the second basal area 104 and be arranged in the first basal area 102 and the second basal area 104 between multi-quantum pit structure 106.
Multi-quantum pit structure 106 comprises at least three quantum well region.For example, in the execution mode of Fig. 1, semiconductor device 100 comprises the first quantum well region 108, the second quantum well region 110, the 3rd quantum well region 112 and the 4th quantum well region 114.Yet in additional execution mode, the semiconductor device 100 of emitted radiation can comprise only three quantum well region or four above quantum well region.
Each in the 108-114 of quantum well region has corresponding well region thickness 115 in the direction of extending between the first basal area 102 and the second basal area 104.The corresponding well region thickness 115 of quantum well region 108-114 can be identical or different.The unrestriced mode by example, each in corresponding well region thickness 115 can be approximately 2 nanometers or more, approximately 5 nanometers or more, approximately 10 nanometers or more or even approximately 20 nanometers or more.
In the execution mode of Fig. 1, the first quantum well region 108 is positioned at and approaches the first basal area 102, and the 4th quantum well region 114 is positioned at and approaches the second basal area 104.Therefore, the first more close the first basal area 102 in 108 to the second quantum well region 110, quantum well region, more close the first basal area 102 in 110 to the three quantum well region 112, described the second quantum well region, more close the first basal area 102 in 112 to the four quantum well region 114, described the 3rd quantum well region.Similarly, the 4th more close the second basal area 104 in 114 to the three quantum well region 112, quantum well region, more close the second basal area 104 in 112 to the second quantum well region 110, described the 3rd quantum well region, more close the second basal area 104 in 110 to the first quantum well region 108, described the second quantum well region.
Barrier region can be disposed between adjacent quantum well region 108-114.For example, as shown in fig. 1, the first barrier region 116 is disposed between the first quantum well region 108 and the second quantum well region 110, the second barrier region 118 is disposed between the second quantum well region 110 and the 3rd quantum well region 112, and the 3rd barrier region 120 is disposed between the 3rd quantum well region 112 and the 4th quantum well region 114.
Each in the 116-120 of barrier region has corresponding barrier region thickness 121 in the direction of extending between the first basal area 102 and the second basal area 104.The corresponding barrier region thickness 121 of barrier region 116-120 can be identical or different.Each in corresponding barrier region thickness 121 can be more than or equal to well region thickness 115, to prevent that electronics from passing through the tunnelling of the barrier region 116-120 between the 108-114 of quantum well region.The unrestriced mode by example, each in corresponding barrier region thickness 121 can be approximately 2 nanometers or more, approximately 5 nanometers or more, approximately 10 nanometers or more, approximately 15 (15) nanometers or more or even approximately 20 nanometers or more.
Multi-quantum pit structure 106 can have general construction thickness 122 in the direction of extending between the first basal area 102 and the second basal area 104, for example, approximately 10 nanometers or more, approximately 20 nanometers or more, approximately 50 (50) nanometers or more, approximately 85 (85) nanometers or more or even approximately 140 (140) nanometers or more.
The first basal area 102 can comprise N-shaped semi-conducting material, and the second basal area 104 can comprise p-type semi-conducting material.The unrestriced mode by example, each in the first basal area 102 and the second basal area 104 can comprise III-V semi-conducting material, such as In
zga
1-zn, wherein z is to approximately between 0.17 approximately 0.02.The first basal area 102 can be N-shaped III-V semi-conducting material intrinsic or doping, and the second basal area 104 can be p-type semi-conducting material intrinsic or doping.
The first basal area 102 can be couple to the first conductive contact 142 electrically and structurally, and the second basal area 104 can be couple to the second conductive contact 144 electrically and structurally.Each in the first conductive contact 142 and the second conductive contact 144 can comprise for example one or more metals (for example, aluminium, titanium, platinum, nickel gold etc.) or metal alloy, and can comprise the metal or metal alloy that multilayer is such.In additional execution mode, the first conductive contact 142 and/or the second conductive contact 144 can comprise respectively N-shaped doping or intrinsic or p-type semi-conducting material.
Metal and metal alloy may be opaque in operating period of semiconductor device 100 for a wavelength of the electromagnetic radiation in multi-quantum pit structure 106 interior generations or a plurality of wavelength.Therefore, as shown in fig. 1, the second conductive contact 144 can not cover the whole surface of the second basal area 104.For example, can, by the second conductive contact 144 compositions, make one or more apertures run through the second conductive contact 144.In this structure, in the radiation of multi-quantum pit structure 106 interior generations, will from semiconductor device 100, transmit and by the second conductive contact 144 by the second basal area 104.Additionally or alternatively, can be to the first conductive contact 142 compositions as described with reference to the second conductive contact 144.
With reference to the energy band diagram in Fig. 1, the first conductive contact 142 and the first basal area 102 can be given multi-quantum pit structure 106 supplies electrons 146.The second conductive contact 144 and the second basal area 104 can give multi-quantum pit structure 106 supply holes 148.As mentioned previously, electronics 146 can be with respect to hole 148 in the higher mobility of the interior displaying of multi-quantum pit structure 106.Therefore, in the device of previously known, when the multi-quantum pit structure 106 of leap between the first basal area 102 and the second basal area 104 applies voltage, although electronics 146 can be crossed over multi-quantum pit structure 106, distribute relatively equably, hole 148 can be crossed over multi-quantum pit structure 106 and distributes more unevenly and can concentrate in the quantum well region of the most close the second basal area 104 more to heavens.The compound probability of less desirable non-radiative Auger (Auger) that such uneven distribution raising electronics 146 of hole 148 leap multi-quantum pit structures 106 and hole are 148 pairs.
As mentioned previously, the multi-quantum pit structure 106 of embodiment of the present disclosure has band structure, and described band structure is customized in the operating period of semiconductor device 100 and crosses over the improved distribution that multi-quantum pit structure 106 provides hole 148.
Continuation is with reference to the energy band diagram of Fig. 1, and quantum well region 108-114 can have to be selected to each in the 108-114 of quantum well region provides material component and the Structural Tectonics of band-gap energy 132.In the execution mode shown in Fig. 1, band-gap energy 132 at least substantially equates in different quantum well region 108-114.In additional execution mode, the one or more band-gap energy 132 in the 108-114 of quantum well region can be different from another the band-gap energy in the 108-114 of quantum well region.
Barrier region 116-120 can have to be selected to each in the 116-120 of barrier region provides material component and the Structural Tectonics of corresponding band-gap energy 124-128.As shown at the energy band diagram of Fig. 1, the band-gap energy 124 in the first barrier region 116 can be greater than the band-gap energy 126 in the second barrier region 118, and the band-gap energy 126 in the second barrier region 118 can be greater than the band-gap energy 128 in the 3rd barrier region 120.In addition, each in the band-gap energy 132 of quantum well region 108-114 can be less than each in the band-gap energy 124-128 of barrier region 116-120.
In this structure, hole energy barrier 136 between the 4th quantum well 114 and the 3rd quantum well 112 can be less than the hole energy barrier 138 between the 3rd quantum well 112 and the second quantum well 110, and the hole energy barrier 138 between the 3rd quantum well 112 and the second quantum well 110 can be less than the hole energy barrier 140 between the second quantum well 110 and the first quantum well 108.In other words, the hole energy barrier 136-140 that crosses over barrier region 116-120 can cross over multi-quantum pit structure 106 in the direction of extending to the first basal area 102 from the second basal area 104 (it is supplied to multi-quantum pit structure 106 by hole 148) and increase in the mode of stepping.Hole energy barrier 136-140 is energy poor that crosses over the valence band at the interface between quantum well region 108-114 and adjacent barrier region 116-120.The result of the hole energy barrier 136-140 of the increase of moving to the first basal area 102 from the second basal area 104 as leap barrier region 116-120, can realize being more uniformly distributed of hole 148 multi-quantum pit structure 106 is interior, this can raise the efficiency in the operating period of the semiconductor device 100 of emitted radiation.
As mentioned previously, barrier region 116-120 can have to be selected to each in the 116-120 of barrier region provides their material component and Structural Tectonics of different corresponding band-gap energy 124-128.The unrestriced mode by example, each in the 116-120 of barrier region can comprise ternary III-nitride material, such as In
yga
1-yn, wherein y is at least about 0.05.Improve the In of barrier region 116-120
yga
1-yindium content in N (that is, improving the value of y) can reduce the band-gap energy of barrier region 116-120.Therefore, the second barrier region 118 can have higher indium content with respect to the first barrier region 116, and the 3rd barrier region 120 can have higher indium content with respect to the second barrier region 118.The unrestriced mode by example, the first barrier region 116 can comprise In
yga
1-yn, wherein y is that the second barrier region 118 can comprise In approximately 0.05 and approximately between 0.15
yga
1-yn, wherein y is approximately 0.10 and approximately between 0.20, and the 3rd barrier region 120 can comprise In
yga
1-yn, wherein y is approximately 0.15 and approximately between 0.25.
Quantum well region 108-114 can also comprise ternary III-nitride material, such as In
xga
1-xn, wherein x can be at least about 0.12, or even approximately 0.17 or more.
Quantum well region 108-114 described above and barrier region 116-120 can comprise the general closed planar layer of III-V semi-conducting material (for example, ternary III-nitride material, such as InGaN (InGaN)).The layer of III-V semi-conducting material can be crystalline solid, and can comprise the monocrystal of III-V semi-conducting material.
As known in the art, the layer of the III-V semi-conducting material of crystallization usually comprises the defect of some in the lattice of III-V semi-conducting material.These defects in crystal structure can comprise for example point defect and line defect (for example, line dislocation).Such defect is unfavorable to comprising the performance of light-sensitive device of layer of III-V semi-conducting material.
Can be by the layer of the III-V semi-conducting material of growing to extension is manufactured to the layer of the III-V semi-conducting material of crystallization on the surface at the bottom of back lining, but the similar slightly different lattice of lattice with the III-V semi-conducting material of crystallization at the bottom of described back lining, there is.As a result, when the layer growth of the III-V of crystallization semi-conducting material is on different back lining bottom materials, the mechanically strain of lattice of the III-V semi-conducting material of crystallization.Result as this strain, along with III-V semi-conducting material layer thickness at growing period, increase, stress in the layer of III-V semi-conducting material can increase, until under certain critical thickness, such as the such defect of dislocation, become actively favourable and be formed in the layer of III-V semi-conducting material to alleviate moulding stress wherein.
When the layer of extension ground cvd nitride indium gallium (InGaN), the critical thickness of the layer of InGaN reduces along with improving indium content.Therefore, be difficult to or can not be manufactured on the defect wherein with relatively high layer thickness and relative low concentration degree relatively high indium concentration InGaN layer.
In order to overcome these difficulties, as described above, the method for exploitation can be used to manufacture and comprise the quantum well region 108-114 of ternary III-nitride material (such as InGaN) and the multi-quantum pit structure 106 of barrier region 116-120 recently.The unrestriced mode by example, as being used to manufacture the multi-quantum pit structure 106 of the semiconductor device 100 of emitted radiation as described in this article to the method described in any in No. 2010/0109126th, the U.S. Patent Application Publication of people's issues such as Arena on February 11st, 2010 to U.S. Patent Application Publication on July 15th, No. 2010/0032793 1 of the people such as Guenard issue to No. 2010/0176490th, the U.S. Patent Application Publication of people's issues such as Letertre or on May 6th, 2010.
With reference to Fig. 2 to Fig. 5, be described below the non-limiting example of method of the multi-quantum pit structure 106 of the semiconductor device 100 that can be used to manufacture emitted radiation as described in this article.
With reference to Fig. 2, substrate 152 can be provided, it is included in the strained semiconductor material layer 158 on base substrate 156, and wherein strain relaxation layer 154 is disposed between base substrate 156 and strained semiconductor material layer 158.Base substrate 156 can comprise for example, in for example sapphire, carborundum, silicon and metal material (, molybdenum, tantalum etc.) any one or more.Strain relaxation layer 154 can comprise such as the such material of silicate glass, phosphosilicate glass, borosilicate glass or boron phosphorus silicate glass.Strained semiconductor material 158 finally can be used as Seed Layer, for extension by a plurality of, be deposited upon on it to form multi-quantum pit structure 106 above.The unrestriced mode by example, strained semiconductor material layer 158 can comprise In
zga
1-zn, wherein z is approximately 0.06 and approximately between 0.08.
Strained semiconductor material layer 158 can comprise III-V semi-conducting material.By the mode of non-limiting example, strained semiconductor material layer 158 can comprise gallium nitride (GaN), nitrogen indium gallium (In
xga
1-xn) and nitrogen gallium aluminium (Al
xga
1-xn) at least one in.
With reference to Fig. 3, can form a plurality of openings 160 that run through strained semiconductor material layer 158.The unrestriced mode by example, mask and etch process can be used to form by the opening 160 of strained semiconductor material layer 158.Forming by after the opening 160 of strained semiconductor material layer 158, structure can strain relaxation layer 154 in such a way plasticity or flexibly distortion temperature under experience Technology for Heating Processing,, following of the stress of permission in the remainder of strained semiconductor material layer 158 and/or strain is lax, to the remainder of strained semiconductor material layer 158 is transformed into at least one individuality of lax semi-conducting material 162 as illustrated in Fig. 4.
With reference to Fig. 5, can by extension sequentially a plurality of III-V body of semiconductor material are deposited on to the various layers that form the semiconductor device 100 (Fig. 1) of emitted radiation on the body of lax semi-conducting material 162.For example, have component as described earlier and structure N-shaped ternary III-nitride material the first basal area 102 can by extension be deposited on the body of lax semi-conducting material 162.Comprise have as the quantum well region 108-114 of the ternary III-nitride material at component as described above and structure and barrier region 116-120 then can by extension be deposited on the first basal area 102, to form multi-quantum pit structure 106.Have component as described earlier and structure p-type semi-conducting material the second basal area 104 then can by extension be deposited on multi-quantum pit structure 106.
In some embodiments, for example, can remove substrate 152 to provide the entering of the first basal area 102, to form thereon, one or morely electrically contact or contact layer.Etch process, grinding technics, chemical-mechanical polishing (CMP) technique, laser ablation process and SMART
one or more in technique can be used to remove substrate 152.Then the first conductive contact 142 can be on the first basal area 102, formed or otherwise provide, and the second conductive contact 144 can be on the second basal area 104, formed or otherwise provide.
Additional non-limiting example of the present disclosure is provided below:
Execution mode 1: a kind of semiconductor device of emitted radiation, comprising: the first basal area, this first basal area comprises N-shaped III-V semi-conducting material, the second basal area, this second basal area comprises p-type III-V semi-conducting material, and multi-quantum pit structure, this multi-quantum pit structure is disposed between the first basal area and the second basal area, multi-quantum pit structure comprises at least three quantum well region and at least two barrier regions, the first barrier region at least two barrier regions is disposed between the first quantum well region and the second quantum well region at least three quantum well region, the second barrier region at least two barrier regions is disposed between the second quantum well region and the 3rd quantum well region at least three quantum well region, the first quantum well region is than the 3rd more close the first basal area in quantum well region, and the 3rd quantum well region is than more close the second basal area in the first quantum well region, wherein, each in the first quantum well region, the second quantum well region and the 3rd quantum well region has the well region thickness at least about 2 nanometers in the direction of extending between the first basal area and the second basal area, and in each direction of extending between the first basal area and the second basal area in the first barrier region and the second barrier region, has each the barrier region thickness being more than or equal in well region thickness, and wherein, the hole energy barrier between the 3rd quantum well region and the second quantum well region is less than the hole energy barrier between the second quantum well region and the first quantum well region.
Execution mode 2: according to the semiconductor device of the emitted radiation described in execution mode 1, wherein, each in the first quantum well region, the second quantum well region and the 3rd quantum well region comprises ternary III-nitride material.
Execution mode 3: according to the semiconductor device of the emitted radiation described in execution mode 2, wherein, ternary III-nitride material comprises In
xga
1-xn.
Execution mode 4: according to the semiconductor device of the emitted radiation described in execution mode 3, wherein, x is at least about 0.12.
Execution mode 5: according to the semiconductor device of the emitted radiation described in any one in execution mode 1 to 4, wherein, each in the first barrier region and the second barrier region comprises ternary III-nitride material.
Execution mode 6: according to the semiconductor device of the emitted radiation described in execution mode 5, wherein, the ternary III-nitride material of the first barrier region and the second barrier region comprises In
yga
1-yn.
Execution mode 7: according to the semiconductor device of the emitted radiation described in execution mode 6, wherein, y is at least about 0.05.
Execution mode 8: according to the semiconductor device of the emitted radiation described in any one in execution mode 1 to 4, wherein, each in the first barrier region and the second barrier region comprises binary III-nitride material.
Execution mode 9: according to the semiconductor device of the emitted radiation described in execution mode 8, wherein, the binary III-nitride material of the first barrier region and the second barrier region comprises GaN.
Execution mode 10: according to the semiconductor device of the emitted radiation described in any one in execution mode 1 to 9, wherein, the well region thickness of each in the first quantum well region, the second quantum well region and the 3rd quantum well region is at least about 5 nanometers.
Execution mode 11: according to the semiconductor device of the emitted radiation described in execution mode 10, wherein, the well region thickness of each in the first quantum well region, the second quantum well region and the 3rd quantum well region is at least about 10 nanometers.
Execution mode 12: according to the semiconductor device of the emitted radiation described in execution mode 11, wherein, the well region thickness of each in the first quantum well region, the second quantum well region and the 3rd quantum well region is at least about 20 nanometers.
Execution mode 13: according to the semiconductor device of the emitted radiation described in any one in execution mode 1 to 12, wherein, the first barrier region has the first band-gap energy and the second barrier region has the second band-gap energy, and the second band-gap energy is less than the first band-gap energy.
Execution mode 14: according to the semiconductor device of the emitted radiation described in any one in execution mode 1 to 13, wherein, multi-quantum pit structure also comprises one or more additional quantum well region and one or more additional barrier region, and wherein, the hole energy barrier leap multi-quantum pit structure between the adjacent quantum well region in multi-quantum pit structure reduces to the second basal area in a stepwise manner from the first basal area.
Execution mode 15: a kind of device that comprises at least one light-emitting diode (LED), comprising: the first basal area, this first basal area comprises N-shaped III-V semi-conducting material, the second basal area, this second basal area comprises p-type III-V semi-conducting material, and multi-quantum pit structure, this multi-quantum pit structure is disposed between the first basal area and the second basal area, multi-quantum pit structure comprises at least three quantum well region and at least two barrier regions, the first barrier region at least two barrier regions is disposed between the first quantum well region and the second quantum well region at least three quantum well region, the second barrier region at least two barrier regions is disposed between the second quantum well region and the 3rd quantum well region at least three quantum well region, the first quantum well region is than the 3rd more close the first basal area in quantum well region, and the 3rd quantum well region is than the 3rd more close the second basal area in quantum well region, wherein, each in the first quantum well region, the second quantum well region and the 3rd quantum well region comprises In
xga
1-xn and there is the well region thickness at least about 2 nanometers in the direction of extending between the first basal area and the second basal area, and each in the first barrier region and the second barrier region comprises In
yga
1-yn, wherein y is at least about 0.05, and in the direction of extending, has each thickness of being greater than in well region thickness and at least about the barrier region thickness of 2 nanometers between the first basal area and the second basal area, and wherein, the hole energy barrier between the 3rd quantum well region and the second quantum well region is less than the hole energy barrier between the second quantum well region and the first quantum well region.
Execution mode 16: according to the device described in execution mode 15, wherein, the well region thickness of each in the first quantum well region, the second quantum well region and the 3rd quantum well region is at least about 5 nanometers.
Execution mode 17: according to the device described in execution mode 15 or execution mode 16, wherein, the first barrier region has the first band-gap energy and the second barrier region has the second band-gap energy, and the second band-gap energy is less than the first band-gap energy.
Execution mode 18: according to the device described in execution mode 15 or execution mode 17, wherein, multi-quantum pit structure has the general construction thickness at least about 10nm in the direction of extending between the first basal area and the second basal area.
Execution mode 19: a kind of method that forms the device of emitted radiation, comprise: on substrate, sequentially extension deposit a plurality of III-V body of semiconductor material to form multi-quantum pit structure, this multi-quantum pit structure comprise be arranged in the first barrier region between the first quantum well region and the second quantum well region and be arranged in the second quantum well region and the 3rd quantum well region between the second barrier region; Form each in the first quantum well region, the second quantum well region and the 3rd quantum well region to there is the well region thickness at least about 2 nanometers; Form each in the first barrier region and the second barrier region to there is the barrier region thickness of each thickness being more than or equal in well region thickness; And select each the component in the first quantum well region, the second quantum well region and the 3rd quantum well region, make the hole energy barrier between the 3rd quantum well region and the second quantum well region be less than the hole energy barrier between the second quantum well region and the first quantum well region.
Execution mode 20: according to the method described in execution mode 19, also comprise form in the first quantum well region, the second quantum well region and the 3rd quantum well region each to comprise ternary III-nitride material.
Execution mode 21: according to the method described in execution mode 20, also comprise and select ternary III-nitride material to comprise In
xga
1-xn.
Execution mode 22: according to the method described in execution mode 21, also comprise preparation In
xga
1-xit is at least about 0.12 that N makes x.
Execution mode 23: according to the method described in any one in execution mode 19 to 22, also comprise form in the first barrier region and the second barrier region each to comprise ternary III-nitride material.
Execution mode 24: according to the method described in execution mode 23, also comprise and select the ternary III-nitride material of the first barrier region and the second barrier region to comprise In
yga
1-yn.
Execution mode 25: according to the method described in execution mode 24, also comprise preparation In
yga
1-yit is at least about 0.05 that N makes y.
Execution mode 26: according to the method described in any one in execution mode 19 to 22, also comprise form in the first barrier region and the second barrier region each to comprise binary III-nitride material.
Execution mode 27: according to the method described in execution mode 26, also comprise and select the binary III-nitride material of the first barrier region and the second barrier region to comprise GaN.
Execution mode 28: according to the method described in any one in execution mode 19 to 27, also comprise form in the first quantum well region, the second quantum well region and the 3rd quantum well region each to there is the corresponding well region thickness at least about 5 nanometers.
Execution mode 29: according to the method described in execution mode 28, also comprise form in the first quantum well region, the second quantum well region and the 3rd quantum well region each to there is the corresponding well region thickness at least about 10 nanometers.
Execution mode 30: according to the method described in execution mode 29, also comprise form in the first quantum well region, the second quantum well region and the 3rd quantum well region each to there is the corresponding well region thickness at least about 20 nanometers.
Execution mode 31: according to the method described in any one in execution mode 19 to 30, also comprise and form the first barrier region to there is the first band-gap energy, and form the second barrier region to there is the second band-gap energy that is less than the first band-gap energy.
Execution mode 32: according to the method described in any one in execution mode 19 to 27, also comprise and form multi-quantum pit structure to there is the general construction thickness at least about 10nm.
Execution mode 33: a kind of method that forms the device of emitted radiation, comprising: form a plurality of openings that run through strained semiconductor material layer on strain relaxation layer; Heat treatment strained semiconductor material and strain relaxation layer, and cause the deformation of strain relaxation layer and relaxing to form at least one individuality of lax semi-conducting material of strained semiconductor material; On at least one individuality of lax semi-conducting material, sequentially extension deposit a plurality of III-V body of semiconductor material to form multi-quantum pit structure, this multi-quantum pit structure comprise be arranged in the first barrier region between the first quantum well region and the second quantum well region and be arranged in the second quantum well region and the 3rd quantum well region between the second barrier region; Form each in the first quantum well region, the second quantum well region and the 3rd quantum well region to there is the well region thickness at least about 2 nanometers; Form each in the first barrier region and the second barrier region to there is the barrier region thickness of each thickness being more than or equal in well region thickness; And select each the component in the first quantum well region, the second quantum well region and the 3rd quantum well region, make the hole energy barrier between the 3rd quantum well region and the second quantum well region be less than the hole energy barrier between the second quantum well region and the first quantum well region.
Execution mode 34: according to the method described in execution mode 33, also comprise form in the first quantum well region, the second quantum well region and the 3rd quantum well region each to comprise ternary III-nitride material.
Execution mode 35: according to the method described in execution mode 34, also comprise and select ternary III-nitride material to comprise In
xga
1-xn.
Execution mode 36: according to the method described in execution mode 35, also comprise preparation In
xga
1-xit is at least about 0.12 that N makes x.
Execution mode 37: according to the method described in any one in execution mode 33 to 36, also comprise form in the first barrier region and the second barrier region each to comprise ternary III-nitride material.
Execution mode 38: according to the method described in execution mode 37, also comprise and select the ternary III-nitride material of the first barrier region and the second barrier region to comprise In
yga
1-yn.
Execution mode 39: according to the method described in execution mode 38, also comprise preparation In
yga
1-yit is at least about 0.05 that N makes y.
Execution mode 40: according to the method described in any one in execution mode 33 to 36, also comprise form in the first barrier region and the second barrier region each to comprise binary III-nitride material.
Execution mode 41: according to the method described in execution mode 40, also comprise and select the binary III-nitride material of the first barrier region and the second barrier region to comprise GaN.
Execution mode 42: according to the method described in any one in execution mode 33 to 41, also comprise form in the first quantum well region, the second quantum well region and the 3rd quantum well region each to there is the corresponding well region thickness at least about 5 nanometers.
Execution mode 43: according to the method described in execution mode 42, also comprise form in the first quantum well region, the second quantum well region and the 3rd quantum well region each to there is the corresponding well region thickness at least about 10 nanometers.
Execution mode 44: according to the method described in execution mode 43, also comprise form in the first quantum well region, the second quantum well region and the 3rd quantum well region each to there is the corresponding well region thickness at least about 20 nanometers.
Execution mode 45: according to the method described in any one in execution mode 33 to 44, also comprise and form the first barrier region to there is the first band-gap energy, and form the second barrier region to there is the second band-gap energy that is less than the first band-gap energy.
Execution mode 46: according to the method described in any one in execution mode 33 to 41, also comprise and form multi-quantum pit structure to there is the general construction thickness at least about 10nm.
Execution mode 47: according to the method described in any one in execution mode 33 to 46, also comprise and form strained semiconductor material to comprise In
zga
1-zn.
Execution mode 48: according to the method described in execution mode 47, also comprise preparation In
zga
1-zit is approximately 0.06 and approximately between 0.08 that N makes z.
Execution mode 49: according to the method described in any one in execution mode 33 to 48, also comprise and form strain relaxation layer to comprise at least one in silicate glass, phosphosilicate glass, borosilicate glass and boron phosphorus silicate glass.
Although described in this article the present invention with respect to specific exemplary embodiments, those of ordinary skill in the art is by understanding and understand it and be not so limited.On the contrary, in the situation that do not deviate from as the scope of the present invention for required protection hereinafter, can make many interpolations, deletion and modification to illustrative embodiments.For example, from the feature of an illustrative embodiments can with the Feature Combination of another execution mode, be still comprised in as by the set scope of the present invention of expecting of the inventor simultaneously.
Claims (20)
1. a device that comprises at least one light-emitting diode (LED), comprising:
The first basal area, described the first basal area comprises N-shaped III-V semi-conducting material;
The second basal area, described the second basal area comprises p-type III-V semi-conducting material; And
Multi-quantum pit structure, described multi-quantum pit structure is disposed between described the first basal area and described the second basal area, described multi-quantum pit structure comprises at least three quantum well region and at least two barrier regions, between the first quantum well region and the second quantum well region described in the first barrier region in described at least two barrier regions is disposed at least three quantum well region, between the second quantum well region described in the second barrier region in described at least two barrier regions is disposed at least three quantum well region and the 3rd quantum well region, described the first quantum well region is than described the 3rd more close described the first basal area in quantum well region, and described the 3rd quantum well region is than more close described the second basal area in described the first quantum well region,
Wherein, each in described the first quantum well region, described the second quantum well region and described the 3rd quantum well region comprises In
xga
1-xn and there is the well region thickness at least about 2 nanometers in the direction of extending between described the first basal area and described the second basal area, and each in described the first barrier region and described the second barrier region comprises In
yga
1-yn, and in the described direction of extending, there is each well region thickness of being greater than in described well region thickness and at least about the barrier region thickness of 2 nanometers, wherein y is at least about 0.05 between described the first basal area and described the second basal area; And
Wherein, the hole energy barrier between described the 3rd quantum well region and described the second quantum well region is less than the hole energy barrier between described the second quantum well region and described the first quantum well region.
2. device according to claim 1, wherein, the well region thickness of each in described the first quantum well region, described the second quantum well region and described the 3rd quantum well region is at least about 5 nanometers.
3. device according to claim 1, wherein, described the first barrier region has the first band-gap energy and described the second barrier region has the second band-gap energy, and described the second band-gap energy is less than described the first band-gap energy.
4. device according to claim 1, wherein, described multi-quantum pit structure has the general construction thickness at least about 10 nm in the described direction of extending between described the first basal area and described the second basal area.
5. device according to claim 1, wherein, described the first basal area comprises the body of lax semi-conducting material.
6. a method that forms the device of emitted radiation, comprising:
On strain relaxation layer, form a plurality of openings of the layer that runs through strained semiconductor material;
Strained semiconductor material and described strain relaxation layer described in heat treatment, and cause the deformation of described strain relaxation layer and relaxing to form at least one individuality of lax semi-conducting material of described strained semiconductor material;
On at least one individuality of described lax semi-conducting material, sequentially extension deposit a plurality of III-V body of semiconductor material to form multi-quantum pit structure, described multi-quantum pit structure comprise be arranged in the first barrier region between the first quantum well region and the second quantum well region and be arranged in described the second quantum well region and the 3rd quantum well region between the second barrier region;
Form each in described the first quantum well region, described the second quantum well region and described the 3rd quantum well region to there is the well region thickness at least about 2 nanometers;
Form each in described the first barrier region and described the second barrier region to there is the barrier region thickness that is more than or equal to each the well region thickness in described well region thickness; And
Select each the component in described the first quantum well region, described the second quantum well region and described the 3rd quantum well region, make the hole energy barrier between described the 3rd quantum well region and described the second quantum well region be less than the hole energy barrier between described the second quantum well region and described the first quantum well region.
7. method according to claim 6, the method also comprises: form each in described the first quantum well region, described the second quantum well region and described the 3rd quantum well region to comprise In
xga
1-xn.
8. method according to claim 7, the method also comprises: prepare described In
xga
1-xit is at least about 0.12 that N makes x.
9. method according to claim 6, the method also comprises: form each in described the first barrier region and described the second barrier region to comprise In
yga
1-yn.
10. method according to claim 9, the method also comprises: prepare described In
yga
1-yit is at least about 0.05 that N makes y.
11. methods according to claim 6, the method also comprises: form each in described the first barrier region and described the second barrier region to comprise binary III-nitride material.
12. methods according to claim 11, the method also comprises: select the described binary III nitride material of described the first barrier region and described the second barrier region to comprise GaN.
13. methods according to claim 6, the method also comprises: form each in described the first quantum well region, described the second quantum well region and described the 3rd quantum well region to have the corresponding well region thickness at least about 5 nanometers.
14. methods according to claim 13, the method also comprises: form each in described the first quantum well region, described the second quantum well region and described the 3rd quantum well region to have the corresponding well region thickness at least about 10 nanometers.
15. methods according to claim 14, the method also comprises: form each in described the first quantum well region, described the second quantum well region and described the 3rd quantum well region to have the corresponding well region thickness at least about 20 nanometers.
16. methods according to claim 6, the method also comprises: form described the first barrier region to have the first band-gap energy, and form described the second barrier region to have the second band-gap energy that is less than described the first band-gap energy.
17. methods according to claim 6, the method also comprises: form described multi-quantum pit structure to have the general construction thickness at least about 10nm.
18. methods according to claim 6, the method also comprises: form described strained semiconductor material to comprise In
zga
1-zn.
19. methods according to claim 18, the method also comprises: prepare described In
zga
1-zit is to approximately between 0.17 approximately 0.02 that N makes z.
20. methods according to claim 6, the method also comprises: form described strain relaxation layer to comprise at least one in silicate glass, phosphosilicate glass, borosilicate glass and boron phosphorus silicate glass.
Applications Claiming Priority (5)
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| US13/362,866 US8471243B1 (en) | 2012-01-31 | 2012-01-31 | Photoactive devices with improved distribution of charge carriers, and methods of forming same |
| FR1251158A FR2986661B1 (en) | 2012-02-08 | 2012-02-08 | PHOTOACTIVE DEVICES WITH IMPROVED LOAD CARRIER DISTRIBUTION AND METHODS OF FORMING THE SAME |
| FR1251158 | 2012-02-08 | ||
| PCT/IB2012/002790 WO2013114152A1 (en) | 2012-01-31 | 2012-12-17 | Photoactive devices with improved distribution of charge carriers, and methods of forming same |
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| FR3004005B1 (en) | 2013-03-28 | 2016-11-25 | Commissariat Energie Atomique | MULTI-QUANTUM WELL ELECTROLUMINESCENT DIODE AND ASYMMETRIC P-N JUNCTION |
| JP6433246B2 (en) | 2014-11-07 | 2018-12-05 | スタンレー電気株式会社 | Semiconductor light emitting device |
| JP6433248B2 (en) * | 2014-11-07 | 2018-12-05 | スタンレー電気株式会社 | Semiconductor light emitting device |
| JP6433247B2 (en) | 2014-11-07 | 2018-12-05 | スタンレー電気株式会社 | Semiconductor light emitting device |
| JP6457784B2 (en) | 2014-11-07 | 2019-01-23 | スタンレー電気株式会社 | Semiconductor light emitting device |
| DE102015100029A1 (en) * | 2015-01-05 | 2016-07-07 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| JP6651167B2 (en) | 2015-03-23 | 2020-02-19 | スタンレー電気株式会社 | Semiconductor light emitting device and method of manufacturing the same |
| JP6387978B2 (en) * | 2016-02-09 | 2018-09-12 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
| JP6729644B2 (en) * | 2018-08-08 | 2020-07-22 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080093593A1 (en) * | 2006-10-20 | 2008-04-24 | Samsung Electronics Co., Ltd | Semiconductor light emitting device |
| CN101515700A (en) * | 2008-02-22 | 2009-08-26 | 住友电气工业株式会社 | Group-iii nitride light-emitting device and method for manufacturing group-iii nitride based semiconductor light-emitting device |
| US20100025728A1 (en) * | 2008-05-15 | 2010-02-04 | Bruce Faure | Relaxation and transfer of strained layers |
| CN101714505A (en) * | 2008-10-07 | 2010-05-26 | 硅绝缘体技术有限公司 | Relaxation of a strained material layer with application of a stiffener |
| CN102113090A (en) * | 2008-08-06 | 2011-06-29 | 硅绝缘体技术有限公司 | Relaxation and transfer of strained layers |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4255168B2 (en) * | 1998-06-30 | 2009-04-15 | シャープ株式会社 | Nitride semiconductor manufacturing method and light emitting device |
| JP2001077417A (en) * | 1999-08-31 | 2001-03-23 | Sharp Corp | Manufacture of nitride compound semiconductor light- emitting element |
| JP3498697B2 (en) * | 2000-07-07 | 2004-02-16 | 日亜化学工業株式会社 | Nitride semiconductor device |
| JP2003031902A (en) * | 2001-07-16 | 2003-01-31 | Denso Corp | Semiconductor laser |
| KR100649749B1 (en) * | 2005-10-25 | 2006-11-27 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
| US8486771B2 (en) | 2008-09-24 | 2013-07-16 | Soitec | Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same |
| JP5315899B2 (en) * | 2008-09-30 | 2013-10-16 | 信越半導体株式会社 | Light emitting element |
| JP5907730B2 (en) | 2008-10-30 | 2016-04-26 | エス・オー・アイ・テック・シリコン・オン・インシュレーター・テクノロジーズ | Semiconductor material with reduced lattice strain, as well as containing semiconductor structures, devices, and methods of manufacturing processed substrates |
| KR101228983B1 (en) * | 2008-11-17 | 2013-02-04 | 삼성전자주식회사 | Nitride Semiconductor Light Emitting Device |
| EP2502266B1 (en) * | 2009-11-18 | 2020-03-04 | Soitec | Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods |
-
2012
- 2012-12-17 WO PCT/IB2012/002790 patent/WO2013114152A1/en active Application Filing
- 2012-12-17 CN CN201280068513.5A patent/CN104094419A/en active Pending
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- 2012-12-17 KR KR1020147021211A patent/KR20140119714A/en not_active Application Discontinuation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080093593A1 (en) * | 2006-10-20 | 2008-04-24 | Samsung Electronics Co., Ltd | Semiconductor light emitting device |
| CN101515700A (en) * | 2008-02-22 | 2009-08-26 | 住友电气工业株式会社 | Group-iii nitride light-emitting device and method for manufacturing group-iii nitride based semiconductor light-emitting device |
| US20100025728A1 (en) * | 2008-05-15 | 2010-02-04 | Bruce Faure | Relaxation and transfer of strained layers |
| CN102113090A (en) * | 2008-08-06 | 2011-06-29 | 硅绝缘体技术有限公司 | Relaxation and transfer of strained layers |
| CN101714505A (en) * | 2008-10-07 | 2010-05-26 | 硅绝缘体技术有限公司 | Relaxation of a strained material layer with application of a stiffener |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015506592A (en) | 2015-03-02 |
| WO2013114152A1 (en) | 2013-08-08 |
| JP6155478B2 (en) | 2017-07-05 |
| KR20140119714A (en) | 2014-10-10 |
| DE112012005796T5 (en) | 2014-10-16 |
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