KR20140069342A - 발광소자 및 전자기기 - Google Patents

발광소자 및 전자기기 Download PDF

Info

Publication number
KR20140069342A
KR20140069342A KR20147011980A KR20147011980A KR20140069342A KR 20140069342 A KR20140069342 A KR 20140069342A KR 20147011980 A KR20147011980 A KR 20147011980A KR 20147011980 A KR20147011980 A KR 20147011980A KR 20140069342 A KR20140069342 A KR 20140069342A
Authority
KR
South Korea
Prior art keywords
light emitting
organic compound
region
emitting device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20147011980A
Other languages
English (en)
Korean (ko)
Inventor
사토시 세오
노부하루 오사와
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20140069342A publication Critical patent/KR20140069342A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • H10K50/165Electron transporting layers comprising dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • H10K50/155Hole transporting layers comprising dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • H10K50/171Electron injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/341Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
KR20147011980A 2008-05-16 2009-05-07 발광소자 및 전자기기 Ceased KR20140069342A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008130215 2008-05-16
JPJP-P-2008-130215 2008-05-16
JP2008198721 2008-07-31
JPJP-P-2008-198721 2008-07-31
PCT/JP2009/058959 WO2009145062A1 (en) 2008-05-16 2009-05-07 Light-emitting element, light-emitting device, and electronic device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020107027466A Division KR101520285B1 (ko) 2008-05-16 2009-05-07 발광소자 및 전자기기

Publications (1)

Publication Number Publication Date
KR20140069342A true KR20140069342A (ko) 2014-06-09

Family

ID=41315295

Family Applications (3)

Application Number Title Priority Date Filing Date
KR20147011980A Ceased KR20140069342A (ko) 2008-05-16 2009-05-07 발광소자 및 전자기기
KR1020127014401A Ceased KR20120081231A (ko) 2008-05-16 2009-05-07 발광소자, 및 조명장치
KR1020107027466A Expired - Fee Related KR101520285B1 (ko) 2008-05-16 2009-05-07 발광소자 및 전자기기

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020127014401A Ceased KR20120081231A (ko) 2008-05-16 2009-05-07 발광소자, 및 조명장치
KR1020107027466A Expired - Fee Related KR101520285B1 (ko) 2008-05-16 2009-05-07 발광소자 및 전자기기

Country Status (5)

Country Link
US (3) US8247804B2 (enExample)
JP (3) JP5568248B2 (enExample)
KR (3) KR20140069342A (enExample)
CN (3) CN105957972A (enExample)
WO (1) WO2009145062A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902742B2 (en) 2006-07-04 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
EP1876658A3 (en) 2006-07-04 2014-06-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
EP2091097A3 (en) * 2008-02-13 2013-05-15 Semiconductor Energy Laboratory Co, Ltd. Light-emitting element, light-emitting device, and electronic device
CN105957972A (zh) * 2008-05-16 2016-09-21 株式会社半导体能源研究所 发光元件、电子设备和照明装置
KR101691395B1 (ko) * 2009-09-04 2017-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 및 이의 제조방법
JP5209123B2 (ja) * 2009-11-04 2013-06-12 パナソニック株式会社 表示パネル装置及びその製造方法
JP2011139044A (ja) 2009-12-01 2011-07-14 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器、および照明装置
CN102696127A (zh) * 2010-01-08 2012-09-26 三菱化学株式会社 有机el 元件及有机发光器件
EP2367215A1 (en) * 2010-03-15 2011-09-21 Novaled AG An organic photoactive device
KR101135541B1 (ko) 2010-04-01 2012-04-13 삼성모바일디스플레이주식회사 유기 발광 장치
CN103154187B (zh) * 2010-10-04 2015-06-17 株式会社半导体能源研究所 复合材料、发光元件、发光装置、电子装置以及照明装置
EP2802594B1 (en) 2012-01-12 2017-04-19 UDC Ireland Limited Metal complexes with dibenzo[f,h]quinoxalines
CN104205390B (zh) * 2012-03-15 2017-08-25 默克专利有限公司 电子器件
KR102699006B1 (ko) * 2012-04-20 2024-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
US10439156B2 (en) * 2013-05-17 2019-10-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, lighting device, and electronic device
KR102079254B1 (ko) 2013-06-24 2020-02-20 삼성디스플레이 주식회사 유기 발광 소자
JP6369747B2 (ja) * 2014-04-14 2018-08-08 Tdk株式会社 電界発光素子
DE102015213426B4 (de) 2014-07-25 2022-05-05 Semiconductor Energy Laboratory Co.,Ltd. Licht emittierendes Element, Licht emittierende Vorrichtung, elekronisches Gerät, Beleuchtungsvorrichtung und organische Verbindung
EP3186264B1 (en) 2014-08-08 2018-11-28 UDC Ireland Limited Electroluminescent imidazo-quinoxaline carbene metal complexes
CN104218165A (zh) * 2014-08-20 2014-12-17 京东方科技集团股份有限公司 一种有机发光二极管器件及显示装置
CN111293226B (zh) * 2014-09-30 2022-10-28 株式会社半导体能源研究所 发光元件、显示装置、电子设备以及照明装置
US10424746B2 (en) 2014-11-18 2019-09-24 Udc Ireland Limited Pt- or Pd-carbene complexes for use in organic light emitting diodes
KR102318252B1 (ko) * 2015-01-14 2021-10-28 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 표시 장치
CN104701458B (zh) 2015-03-24 2019-01-04 京东方科技集团股份有限公司 一种有机发光器件及其制作方法、显示装置
CN104701459B (zh) 2015-03-30 2018-09-11 京东方科技集团股份有限公司 一种有机发光二极管器件及显示面板、显示装置
KR102684614B1 (ko) 2015-12-21 2024-07-15 유디씨 아일랜드 리미티드 삼각형 리간드를 갖는 전이 금속 착체 및 oled에서의 이의 용도
KR102616579B1 (ko) * 2016-04-08 2023-12-22 삼성디스플레이 주식회사 유기 발광 소자
WO2017191526A1 (en) 2016-05-06 2017-11-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, electronic device, and lighting device
CN106098957B (zh) * 2016-07-14 2019-08-02 Tcl集团股份有限公司 一种qled及其制备方法
CN108206241B (zh) * 2016-12-19 2020-02-04 上海和辉光电有限公司 发光器件及制备方法,及有机电致发光显示器
KR102727031B1 (ko) * 2019-02-22 2024-11-07 삼성디스플레이 주식회사 유기 발광 소자
CN110729416A (zh) * 2019-10-24 2020-01-24 昆山国显光电有限公司 复合阳极、发光器件和显示面板
CN113540367B (zh) * 2020-04-20 2023-04-28 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法
JP7599292B2 (ja) 2020-08-06 2024-12-13 JDI Design and Development 合同会社 有機el素子、有機el表示パネル、および、有機el素子の製造方法
CN113421985A (zh) * 2021-06-23 2021-09-21 上海晶合光电科技有限公司 一种串联oled器件及其制备方法
CN113421984A (zh) * 2021-06-23 2021-09-21 上海晶合光电科技有限公司 一种oled器件及其制备方法
CN116995169B (zh) * 2023-09-26 2024-04-09 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、led

Family Cites Families (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833894A (en) 1973-06-20 1974-09-03 Ibm Organic memory device
US5375250A (en) 1992-07-13 1994-12-20 Van Den Heuvel; Raymond C. Method of intelligent computing and neural-like processing of time and space functions
JP2795194B2 (ja) 1994-09-22 1998-09-10 株式会社デンソー エレクトロルミネッセンス素子とその製造方法
DE19500912A1 (de) 1995-01-13 1996-07-18 Basf Ag Elektrolumineszierende Anordnung
US6340588B1 (en) 1995-04-25 2002-01-22 Discovery Partners International, Inc. Matrices with memories
JPH11504749A (ja) 1996-02-16 1999-04-27 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 共役ポリマーまたはオリゴマーのライトワンスリードメニー電気的記憶素子
JP3525034B2 (ja) 1997-07-31 2004-05-10 出光興産株式会社 有機エレクトロルミネッセンス素子
US7265853B1 (en) * 1997-10-17 2007-09-04 Stamps.Com, Inc. Postage server system and method
JP3370011B2 (ja) 1998-05-19 2003-01-27 三洋電機株式会社 有機エレクトロルミネッセンス素子
JP3884564B2 (ja) 1998-05-20 2007-02-21 出光興産株式会社 有機el発光素子およびそれを用いた発光装置
JP2000068057A (ja) 1998-06-12 2000-03-03 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子
JP3287344B2 (ja) 1998-10-09 2002-06-04 株式会社デンソー 有機el素子
US6509217B1 (en) 1999-10-22 2003-01-21 Damoder Reddy Inexpensive, reliable, planar RFID tag structure and method for making same
US6580213B2 (en) 2000-01-31 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of manufacturing the same
JP4592967B2 (ja) * 2000-01-31 2010-12-08 株式会社半導体エネルギー研究所 発光装置及び電気器具
KR20010104215A (ko) 2000-05-12 2001-11-24 야마자끼 순페이 발광장치 제작방법
JP2002075654A (ja) 2000-08-28 2002-03-15 Fuji Xerox Co Ltd 有機電界発光素子
TW582121B (en) * 2001-02-08 2004-04-01 Semiconductor Energy Lab Light emitting device
JP2003007982A (ja) 2001-06-22 2003-01-10 Nec Corp 磁気記憶装置及び磁気記憶装置の設計方法
JP4329305B2 (ja) * 2001-08-27 2009-09-09 株式会社デンソー 有機el素子
SG113443A1 (en) 2001-12-05 2005-08-29 Semiconductor Energy Laboratao Organic semiconductor element
US6683322B2 (en) 2002-03-01 2004-01-27 Hewlett-Packard Development Company, L.P. Flexible hybrid memory element
JP3940014B2 (ja) 2002-03-29 2007-07-04 富士通株式会社 半導体集積回路、無線タグ、および非接触型icカード
JP4539007B2 (ja) 2002-05-09 2010-09-08 日本電気株式会社 半導体記憶装置
US7169482B2 (en) * 2002-07-26 2007-01-30 Lg.Philips Lcd Co., Ltd. Display device with anthracene and triazine derivatives
JP2004079414A (ja) * 2002-08-21 2004-03-11 Nec Corp 有機エレクトロルミネッセント素子
US6847047B2 (en) 2002-11-04 2005-01-25 Advanced Micro Devices, Inc. Methods that facilitate control of memory arrays utilizing zener diode-like devices
JP4287198B2 (ja) * 2002-11-18 2009-07-01 出光興産株式会社 有機エレクトロルミネッセンス素子
TW595251B (en) 2002-12-09 2004-06-21 Univ Nat Cheng Kung Method for manufacturing organic light-emitting diodes
US7220985B2 (en) 2002-12-09 2007-05-22 Spansion, Llc Self aligned memory element and wordline
KR101114899B1 (ko) 2002-12-26 2012-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US6833201B2 (en) 2003-01-31 2004-12-21 Clemson University Nanostructured-doped compound for use in an EL element
US7973313B2 (en) 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
JP2004273163A (ja) 2003-03-05 2004-09-30 Sony Corp 有機el素子とその製造方法および有機elパネル
TW588568B (en) * 2003-05-06 2004-05-21 Au Optronics Corp Organic light emitting device
US6977389B2 (en) 2003-06-02 2005-12-20 Advanced Micro Devices, Inc. Planar polymer memory device
JP4484476B2 (ja) * 2003-09-05 2010-06-16 富士フイルム株式会社 有機電界発光素子
CN100596251C (zh) 2003-09-26 2010-03-24 株式会社半导体能源研究所 发光元件及其制造方法
US7050326B2 (en) 2003-10-07 2006-05-23 Hewlett-Packard Development Company, L.P. Magnetic memory device with current carrying reference layer
TW200527956A (en) 2003-10-24 2005-08-16 Pentax Corp White organic electroluminescent device
DE10355561A1 (de) 2003-11-28 2005-06-30 Infineon Technologies Ag Halbleiteranordnung mit nichtflüchtigen Speichern
JP2005183619A (ja) 2003-12-18 2005-07-07 Canon Inc 不揮発メモリ装置
WO2005064995A1 (en) 2003-12-26 2005-07-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
JP2005310742A (ja) 2004-03-25 2005-11-04 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子
JP4947909B2 (ja) 2004-03-25 2012-06-06 三洋電機株式会社 有機エレクトロルミネッセンス素子
JP4393249B2 (ja) * 2004-03-31 2010-01-06 株式会社 日立ディスプレイズ 有機発光素子,画像表示装置、及びその製造方法
US7622200B2 (en) 2004-05-21 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting element
JP4649676B2 (ja) 2004-07-07 2011-03-16 独立行政法人科学技術振興機構 有機エレクトロルミネッセンス素子
JP2006295104A (ja) 2004-07-23 2006-10-26 Semiconductor Energy Lab Co Ltd 発光素子およびそれを用いた発光装置
JP4916137B2 (ja) 2004-07-29 2012-04-11 三洋電機株式会社 有機エレクトロルミネッセンス素子
WO2006013990A1 (en) 2004-08-03 2006-02-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
EP1624502B1 (en) 2004-08-04 2015-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, and electronic appliance
US7273663B2 (en) * 2004-08-20 2007-09-25 Eastman Kodak Company White OLED having multiple white electroluminescence units
KR100759548B1 (ko) 2004-10-15 2007-09-18 삼성에스디아이 주식회사 유기 전계 발광 소자
CN100557813C (zh) 2004-10-18 2009-11-04 株式会社半导体能源研究所 半导体器件及其驱动方法
CN100592520C (zh) 2004-10-22 2010-02-24 株式会社半导体能源研究所 半导体器件及包括其的显示装置
WO2006043611A1 (en) 2004-10-22 2006-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101187400B1 (ko) 2004-11-26 2012-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
US7892657B2 (en) 2004-11-30 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
JP4653469B2 (ja) 2004-12-01 2011-03-16 出光興産株式会社 有機電界発光素子
US7351999B2 (en) 2004-12-16 2008-04-01 Au Optronics Corporation Organic light-emitting device with improved layer structure
WO2006070619A1 (ja) 2004-12-28 2006-07-06 Konica Minolta Holdings, Inc. 有機エレクトロルミネッセンス素子、表示装置及び照明装置
US20060182994A1 (en) 2005-01-18 2006-08-17 Yukinari Sakamoto Anthracene derivative, organic electroluminescent device, and display unit
EP1866984B1 (en) * 2005-03-23 2017-08-30 Semiconductor Energy Laboratory Co., Ltd. Composite material, light emitting element and light emitting device
TWI307250B (en) 2005-03-23 2009-03-01 Au Optronics Corp Organic electroluminescent device
CN101147274B (zh) 2005-03-25 2010-05-26 株式会社半导体能源研究所 发光元件、发光装置和利用它们的电器
JP5238136B2 (ja) 2005-03-25 2013-07-17 株式会社半導体エネルギー研究所 発光装置
US7745019B2 (en) 2005-04-28 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device and method of manufacturing light emitting element
JP4801495B2 (ja) 2005-04-28 2011-10-26 株式会社半導体エネルギー研究所 発光素子および発光装置
JP4915544B2 (ja) 2005-05-11 2012-04-11 パナソニック株式会社 有機エレクトロルミネッセンス素子
US7511418B2 (en) * 2005-05-20 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and manufacturing method of light emitting element
JP2006328223A (ja) 2005-05-26 2006-12-07 Fuji Xerox Co Ltd 高分子有機電子材料の製造方法、高分子有機電子材料及び有機電界発光素子
US8188461B2 (en) 2005-05-31 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Organic memory device
US8288180B2 (en) * 2005-07-04 2012-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light emitting device
KR101351816B1 (ko) * 2005-07-06 2014-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 및 전자 기기
JP4837958B2 (ja) * 2005-08-26 2011-12-14 大日本印刷株式会社 有機エレクトロルミネッセンス素子
EP1930719A4 (en) * 2005-08-31 2009-11-25 Ccs Inc COAXIAL LIGHT EMITTING DEVICE
JP2007110102A (ja) * 2005-09-15 2007-04-26 Fujifilm Corp 有機電界発光素子
US7839078B2 (en) * 2005-09-15 2010-11-23 Fujifilm Corporation Organic electroluminescent element having a luminescent layer and a buffer layer adjacent thereto
US20070090756A1 (en) * 2005-10-11 2007-04-26 Fujifilm Corporation Organic electroluminescent element
JP2007134677A (ja) * 2005-10-11 2007-05-31 Fujifilm Corp 有機電界発光素子
US8021763B2 (en) * 2005-11-23 2011-09-20 The Trustees Of Princeton University Phosphorescent OLED with interlayer
CN101316879B (zh) * 2005-11-30 2011-10-05 住友化学株式会社 聚合物材料和使用该聚合物材料的聚合物发光器件
US20070126347A1 (en) * 2005-12-01 2007-06-07 Eastman Kodak Company OLEDS with improved efficiency
JP2007234514A (ja) * 2006-03-03 2007-09-13 Semiconductor Energy Lab Co Ltd 照明装置
TWI475737B (zh) 2006-03-08 2015-03-01 Semiconductor Energy Lab 發光元件、發光裝置及電子裝置
JP5084305B2 (ja) * 2006-03-08 2012-11-28 株式会社半導体エネルギー研究所 発光素子、発光装置並びに電子機器
JP4910435B2 (ja) * 2006-03-15 2012-04-04 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子、及び有機エレクトロルミネッセンスディスプレイ
EP1863105B1 (en) 2006-06-02 2020-02-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US7902742B2 (en) 2006-07-04 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
EP1876658A3 (en) 2006-07-04 2014-06-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8277955B2 (en) * 2006-10-17 2012-10-02 Seiko Epson Corporation Compound for organic EL device and organic EL device
KR101270169B1 (ko) * 2006-11-13 2013-05-31 삼성전자주식회사 유기 발광 소자
US7911135B2 (en) 2006-11-29 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light emitting device, electronic appliance, and method of manufacturing the same
EP2087063B1 (en) 2006-11-30 2016-10-19 Semiconductor Energy Laboratory Co, Ltd. Light-emitting device
KR101426717B1 (ko) 2006-12-04 2014-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치 및 전자 기기
EP1973386B8 (en) 2007-03-23 2016-01-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device
US20080284318A1 (en) * 2007-05-17 2008-11-20 Deaton Joseph C Hybrid fluorescent/phosphorescent oleds
JP2009037981A (ja) 2007-08-03 2009-02-19 Idemitsu Kosan Co Ltd 有機el素子および有機el素子の製造方法
US8040047B2 (en) * 2007-10-19 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR20100097662A (ko) * 2007-10-31 2010-09-03 바스프 에스이 할로겐화 프탈로시아닌의 용도
WO2009069535A1 (en) 2007-11-30 2009-06-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
EP2075860A3 (en) 2007-12-28 2013-03-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
EP2091097A3 (en) * 2008-02-13 2013-05-15 Semiconductor Energy Laboratory Co, Ltd. Light-emitting element, light-emitting device, and electronic device
WO2009131199A1 (en) * 2008-04-24 2009-10-29 Semiconductor Energy Laboratory Co., Ltd. Anthracene derivative, light-emitting element, light-emitting device, and electronic appliance
CN105957972A (zh) * 2008-05-16 2016-09-21 株式会社半导体能源研究所 发光元件、电子设备和照明装置
US20100033082A1 (en) * 2008-08-07 2010-02-11 General Electric Company Method of Manufacture of a Multi-Layer Phosphorescent Organic Light Emitting Device, and Articles Thereof
KR101352290B1 (ko) 2008-09-30 2014-01-16 엘지디스플레이 주식회사 유기발광다이오드 표시소자

Also Published As

Publication number Publication date
CN103258964B (zh) 2016-06-01
JP2016029746A (ja) 2016-03-03
CN102027614A (zh) 2011-04-20
JP5568248B2 (ja) 2014-08-06
JP5898727B2 (ja) 2016-04-06
CN102027614B (zh) 2013-05-29
KR20120081231A (ko) 2012-07-18
JP2010056523A (ja) 2010-03-11
KR101520285B1 (ko) 2015-05-14
US9142794B2 (en) 2015-09-22
US20090283757A1 (en) 2009-11-19
WO2009145062A1 (en) 2009-12-03
CN103258964A (zh) 2013-08-21
CN105957972A (zh) 2016-09-21
US8247804B2 (en) 2012-08-21
US20140117344A1 (en) 2014-05-01
JP6118883B2 (ja) 2017-04-19
JP2014199943A (ja) 2014-10-23
KR20110018892A (ko) 2011-02-24
US20120305909A1 (en) 2012-12-06
US8624234B2 (en) 2014-01-07

Similar Documents

Publication Publication Date Title
KR101520285B1 (ko) 발광소자 및 전자기기
KR102800073B1 (ko) 발광소자, 발광장치, 및 전자기기
KR101663000B1 (ko) 발광소자 및 발광장치
KR101434277B1 (ko) 발광소자, 발광 장치 및 전자기기
KR101608676B1 (ko) 발광소자
TWI474758B (zh) 發光元件、發光裝置、和電子裝置
KR20070115626A (ko) 발광소자, 발광장치, 및 전자기기

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL NUMBER: 2015101005533; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20150923

Effective date: 20161214

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20161214

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2014 7011980

Appeal request date: 20150923

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2015101005533

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000