KR20130107199A - 교번 선택을 갖는 상변화 메모리 어레이 블록 - Google Patents

교번 선택을 갖는 상변화 메모리 어레이 블록 Download PDF

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Publication number
KR20130107199A
KR20130107199A KR1020127031016A KR20127031016A KR20130107199A KR 20130107199 A KR20130107199 A KR 20130107199A KR 1020127031016 A KR1020127031016 A KR 1020127031016A KR 20127031016 A KR20127031016 A KR 20127031016A KR 20130107199 A KR20130107199 A KR 20130107199A
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KR
South Korea
Prior art keywords
cells
block
pcm
memory
memory location
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Withdrawn
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KR1020127031016A
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English (en)
Korean (ko)
Inventor
홍범 편
Original Assignee
모사이드 테크놀로지스 인코퍼레이티드
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Application filed by 모사이드 테크놀로지스 인코퍼레이티드 filed Critical 모사이드 테크놀로지스 인코퍼레이티드
Publication of KR20130107199A publication Critical patent/KR20130107199A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
KR1020127031016A 2010-04-27 2011-03-10 교번 선택을 갖는 상변화 메모리 어레이 블록 Withdrawn KR20130107199A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32842110P 2010-04-27 2010-04-27
US61/328,421 2010-04-27
PCT/CA2011/050136 WO2011134079A1 (en) 2010-04-27 2011-03-10 Phase change memory array blocks with alternate selection

Publications (1)

Publication Number Publication Date
KR20130107199A true KR20130107199A (ko) 2013-10-01

Family

ID=44815698

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127031016A Withdrawn KR20130107199A (ko) 2010-04-27 2011-03-10 교번 선택을 갖는 상변화 메모리 어레이 블록

Country Status (8)

Country Link
US (1) US20110261613A1 (enExample)
EP (1) EP2564391A4 (enExample)
JP (1) JP5602941B2 (enExample)
KR (1) KR20130107199A (enExample)
CN (1) CN102859603A (enExample)
CA (1) CA2793927A1 (enExample)
TW (1) TW201203250A (enExample)
WO (1) WO2011134079A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210016266A (ko) * 2019-07-31 2021-02-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 내장된 증폭 기능을 가진 메모리 셀, 메모리 디바이스, 및 이를 사용하는 방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014039329A1 (en) 2012-09-07 2014-03-13 Being Advanced Memory Corporation Systems, methods, and devices with write optimization in phase change memory
US8913425B2 (en) 2013-03-12 2014-12-16 Intel Corporation Phase change memory mask
KR102218531B1 (ko) * 2015-01-29 2021-02-23 삼성디스플레이 주식회사 데이터 보상기 및 이를 포함하는 표시 장치
KR102493814B1 (ko) * 2016-06-29 2023-02-02 에스케이하이닉스 주식회사 메모리 장치
KR20180047835A (ko) * 2016-11-01 2018-05-10 에스케이하이닉스 주식회사 저항성 메모리 장치
KR102771664B1 (ko) * 2016-11-23 2025-02-25 에스케이하이닉스 주식회사 피크 커런트 분산이 가능한 상변화 메모리 장치
US10580491B2 (en) * 2018-03-23 2020-03-03 Silicon Storage Technology, Inc. System and method for managing peak power demand and noise in non-volatile memory array
US10867661B2 (en) 2019-04-30 2020-12-15 Micron Technology, Inc. Main word line driver circuit
US10910049B2 (en) * 2019-04-30 2021-02-02 Micron Technology, Inc. Sub-word line driver circuit
US12456510B2 (en) * 2021-12-20 2025-10-28 Micron Technology, Inc. Memory device control schemes, and associated methods, devices, and systems

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163495A (en) * 1999-09-17 2000-12-19 Cypress Semiconductor Corp. Architecture, method(s) and circuitry for low power memories
JP4540352B2 (ja) * 2003-09-12 2010-09-08 ルネサスエレクトロニクス株式会社 記憶装置
KR100597636B1 (ko) * 2004-06-08 2006-07-05 삼성전자주식회사 상 변화 반도체 메모리 장치
KR100630744B1 (ko) * 2005-03-21 2006-10-02 삼성전자주식회사 워드라인 구동회로의 레이아웃 면적을 감소시킨 반도체메모리 장치
KR100699848B1 (ko) * 2005-06-21 2007-03-27 삼성전자주식회사 코어 구조가 개선된 상 변화 메모리 장치
KR100735525B1 (ko) * 2006-01-04 2007-07-04 삼성전자주식회사 상변화 메모리 장치
JP2007201081A (ja) * 2006-01-25 2007-08-09 Elpida Memory Inc 半導体記憶装置
KR100719383B1 (ko) * 2006-04-12 2007-05-18 삼성전자주식회사 멀티 프로그램 방법을 사용하는 상 변화 메모리 장치
US7525866B2 (en) * 2006-04-19 2009-04-28 Freescale Semiconductor, Inc. Memory circuit
US7450414B2 (en) * 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
US8009476B2 (en) * 2006-09-19 2011-08-30 Samsung Electronics Co., Ltd. Semiconductor memory device using variable resistor
KR101258983B1 (ko) * 2006-09-19 2013-04-29 삼성전자주식회사 가변저항 소자를 이용한 반도체 메모리 장치 및 그 동작방법
KR100909627B1 (ko) * 2007-10-10 2009-07-27 주식회사 하이닉스반도체 플래시 메모리소자
KR101317754B1 (ko) * 2007-10-12 2013-10-11 삼성전자주식회사 상 변화 메모리 장치
JP5222619B2 (ja) * 2008-05-02 2013-06-26 株式会社日立製作所 半導体装置
KR20090117189A (ko) * 2008-05-09 2009-11-12 삼성전자주식회사 멀티 라이트를 위한 효율적인 코아 구조를 갖는 반도체메모리 장치
JP2010044827A (ja) * 2008-08-13 2010-02-25 Toshiba Corp 不揮発性半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210016266A (ko) * 2019-07-31 2021-02-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 내장된 증폭 기능을 가진 메모리 셀, 메모리 디바이스, 및 이를 사용하는 방법
US11183236B2 (en) 2019-07-31 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell with built-in amplifying function, memory device and method using the same

Also Published As

Publication number Publication date
CA2793927A1 (en) 2011-11-03
JP2013527550A (ja) 2013-06-27
WO2011134079A1 (en) 2011-11-03
CN102859603A (zh) 2013-01-02
EP2564391A4 (en) 2015-09-02
WO2011134079A8 (en) 2012-01-12
JP5602941B2 (ja) 2014-10-08
TW201203250A (en) 2012-01-16
EP2564391A1 (en) 2013-03-06
US20110261613A1 (en) 2011-10-27

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