TW201203250A - Phase change memory array blocks with alternate selection - Google Patents
Phase change memory array blocks with alternate selection Download PDFInfo
- Publication number
- TW201203250A TW201203250A TW100108091A TW100108091A TW201203250A TW 201203250 A TW201203250 A TW 201203250A TW 100108091 A TW100108091 A TW 100108091A TW 100108091 A TW100108091 A TW 100108091A TW 201203250 A TW201203250 A TW 201203250A
- Authority
- TW
- Taiwan
- Prior art keywords
- block
- cells
- pcm
- memory
- cell
- Prior art date
Links
- 230000008859 change Effects 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 150000001875 compounds Chemical class 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 239000012782 phase change material Substances 0.000 description 10
- 238000003491 array Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- -1 GaSb Chemical class 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 101100286980 Daucus carota INV2 gene Proteins 0.000 description 2
- 101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 101100113576 Arabidopsis thaliana CINV2 gene Proteins 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005537 GaSeTe Inorganic materials 0.000 description 1
- 229910005872 GeSb Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- 229910018219 SeTe Inorganic materials 0.000 description 1
- 229910006905 SnSb2Te4 Inorganic materials 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- FESBVLZDDCQLFY-UHFFFAOYSA-N sete Chemical compound [Te]=[Se] FESBVLZDDCQLFY-UHFFFAOYSA-N 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0088—Write with the simultaneous writing of a plurality of cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32842110P | 2010-04-27 | 2010-04-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201203250A true TW201203250A (en) | 2012-01-16 |
Family
ID=44815698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100108091A TW201203250A (en) | 2010-04-27 | 2011-03-10 | Phase change memory array blocks with alternate selection |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20110261613A1 (enExample) |
| EP (1) | EP2564391A4 (enExample) |
| JP (1) | JP5602941B2 (enExample) |
| KR (1) | KR20130107199A (enExample) |
| CN (1) | CN102859603A (enExample) |
| CA (1) | CA2793927A1 (enExample) |
| TW (1) | TW201203250A (enExample) |
| WO (1) | WO2011134079A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014039329A1 (en) | 2012-09-07 | 2014-03-13 | Being Advanced Memory Corporation | Systems, methods, and devices with write optimization in phase change memory |
| US8913425B2 (en) | 2013-03-12 | 2014-12-16 | Intel Corporation | Phase change memory mask |
| KR102218531B1 (ko) * | 2015-01-29 | 2021-02-23 | 삼성디스플레이 주식회사 | 데이터 보상기 및 이를 포함하는 표시 장치 |
| KR102493814B1 (ko) * | 2016-06-29 | 2023-02-02 | 에스케이하이닉스 주식회사 | 메모리 장치 |
| KR20180047835A (ko) * | 2016-11-01 | 2018-05-10 | 에스케이하이닉스 주식회사 | 저항성 메모리 장치 |
| KR102771664B1 (ko) * | 2016-11-23 | 2025-02-25 | 에스케이하이닉스 주식회사 | 피크 커런트 분산이 가능한 상변화 메모리 장치 |
| US10580491B2 (en) * | 2018-03-23 | 2020-03-03 | Silicon Storage Technology, Inc. | System and method for managing peak power demand and noise in non-volatile memory array |
| US10867661B2 (en) | 2019-04-30 | 2020-12-15 | Micron Technology, Inc. | Main word line driver circuit |
| US10910049B2 (en) * | 2019-04-30 | 2021-02-02 | Micron Technology, Inc. | Sub-word line driver circuit |
| US11183236B2 (en) | 2019-07-31 | 2021-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell with built-in amplifying function, memory device and method using the same |
| US12456510B2 (en) * | 2021-12-20 | 2025-10-28 | Micron Technology, Inc. | Memory device control schemes, and associated methods, devices, and systems |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6163495A (en) * | 1999-09-17 | 2000-12-19 | Cypress Semiconductor Corp. | Architecture, method(s) and circuitry for low power memories |
| JP4540352B2 (ja) * | 2003-09-12 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 記憶装置 |
| KR100597636B1 (ko) * | 2004-06-08 | 2006-07-05 | 삼성전자주식회사 | 상 변화 반도체 메모리 장치 |
| KR100630744B1 (ko) * | 2005-03-21 | 2006-10-02 | 삼성전자주식회사 | 워드라인 구동회로의 레이아웃 면적을 감소시킨 반도체메모리 장치 |
| KR100699848B1 (ko) * | 2005-06-21 | 2007-03-27 | 삼성전자주식회사 | 코어 구조가 개선된 상 변화 메모리 장치 |
| KR100735525B1 (ko) * | 2006-01-04 | 2007-07-04 | 삼성전자주식회사 | 상변화 메모리 장치 |
| JP2007201081A (ja) * | 2006-01-25 | 2007-08-09 | Elpida Memory Inc | 半導体記憶装置 |
| KR100719383B1 (ko) * | 2006-04-12 | 2007-05-18 | 삼성전자주식회사 | 멀티 프로그램 방법을 사용하는 상 변화 메모리 장치 |
| US7525866B2 (en) * | 2006-04-19 | 2009-04-28 | Freescale Semiconductor, Inc. | Memory circuit |
| US7450414B2 (en) * | 2006-07-31 | 2008-11-11 | Sandisk 3D Llc | Method for using a mixed-use memory array |
| US8009476B2 (en) * | 2006-09-19 | 2011-08-30 | Samsung Electronics Co., Ltd. | Semiconductor memory device using variable resistor |
| KR101258983B1 (ko) * | 2006-09-19 | 2013-04-29 | 삼성전자주식회사 | 가변저항 소자를 이용한 반도체 메모리 장치 및 그 동작방법 |
| KR100909627B1 (ko) * | 2007-10-10 | 2009-07-27 | 주식회사 하이닉스반도체 | 플래시 메모리소자 |
| KR101317754B1 (ko) * | 2007-10-12 | 2013-10-11 | 삼성전자주식회사 | 상 변화 메모리 장치 |
| JP5222619B2 (ja) * | 2008-05-02 | 2013-06-26 | 株式会社日立製作所 | 半導体装置 |
| KR20090117189A (ko) * | 2008-05-09 | 2009-11-12 | 삼성전자주식회사 | 멀티 라이트를 위한 효율적인 코아 구조를 갖는 반도체메모리 장치 |
| JP2010044827A (ja) * | 2008-08-13 | 2010-02-25 | Toshiba Corp | 不揮発性半導体記憶装置 |
-
2011
- 2011-03-10 CN CN2011800210004A patent/CN102859603A/zh active Pending
- 2011-03-10 US US13/044,701 patent/US20110261613A1/en not_active Abandoned
- 2011-03-10 WO PCT/CA2011/050136 patent/WO2011134079A1/en not_active Ceased
- 2011-03-10 EP EP11774248.6A patent/EP2564391A4/en not_active Withdrawn
- 2011-03-10 KR KR1020127031016A patent/KR20130107199A/ko not_active Withdrawn
- 2011-03-10 TW TW100108091A patent/TW201203250A/zh unknown
- 2011-03-10 CA CA2793927A patent/CA2793927A1/en not_active Abandoned
- 2011-03-10 JP JP2013506425A patent/JP5602941B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2793927A1 (en) | 2011-11-03 |
| JP2013527550A (ja) | 2013-06-27 |
| WO2011134079A1 (en) | 2011-11-03 |
| CN102859603A (zh) | 2013-01-02 |
| KR20130107199A (ko) | 2013-10-01 |
| EP2564391A4 (en) | 2015-09-02 |
| WO2011134079A8 (en) | 2012-01-12 |
| JP5602941B2 (ja) | 2014-10-08 |
| EP2564391A1 (en) | 2013-03-06 |
| US20110261613A1 (en) | 2011-10-27 |
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