JP5602941B2 - １つおきの選択を伴う相変化メモリアレイブロック - Google Patents

１つおきの選択を伴う相変化メモリアレイブロック Download PDF

Info

Publication number
JP5602941B2
JP5602941B2 JP2013506425A JP2013506425A JP5602941B2 JP 5602941 B2 JP5602941 B2 JP 5602941B2 JP 2013506425 A JP2013506425 A JP 2013506425A JP 2013506425 A JP2013506425 A JP 2013506425A JP 5602941 B2 JP5602941 B2 JP 5602941B2
Authority
JP
Japan
Prior art keywords
cells
block
pcm
memory
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013506425A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013527550A (ja
JP2013527550A5 (enExample
Inventor
ピョン、ホン・ボム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Conversant Intellectual Property Management Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Conversant Intellectual Property Management Inc filed Critical Conversant Intellectual Property Management Inc
Publication of JP2013527550A publication Critical patent/JP2013527550A/ja
Publication of JP2013527550A5 publication Critical patent/JP2013527550A5/ja
Application granted granted Critical
Publication of JP5602941B2 publication Critical patent/JP5602941B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP2013506425A 2010-04-27 2011-03-10 １つおきの選択を伴う相変化メモリアレイブロック Expired - Fee Related JP5602941B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32842110P 2010-04-27 2010-04-27
US61/328,421 2010-04-27
PCT/CA2011/050136 WO2011134079A1 (en) 2010-04-27 2011-03-10 Phase change memory array blocks with alternate selection

Publications (3)

Publication Number Publication Date
JP2013527550A JP2013527550A (ja) 2013-06-27
JP2013527550A5 JP2013527550A5 (enExample) 2014-02-13
JP5602941B2 true JP5602941B2 (ja) 2014-10-08

Family

ID=44815698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013506425A Expired - Fee Related JP5602941B2 (ja) 2010-04-27 2011-03-10 １つおきの選択を伴う相変化メモリアレイブロック

Country Status (8)

Country Link
US (1) US20110261613A1 (enExample)
EP (1) EP2564391A4 (enExample)
JP (1) JP5602941B2 (enExample)
KR (1) KR20130107199A (enExample)
CN (1) CN102859603A (enExample)
CA (1) CA2793927A1 (enExample)
TW (1) TW201203250A (enExample)
WO (1) WO2011134079A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014039329A1 (en) 2012-09-07 2014-03-13 Being Advanced Memory Corporation Systems, methods, and devices with write optimization in phase change memory
US8913425B2 (en) 2013-03-12 2014-12-16 Intel Corporation Phase change memory mask
KR102218531B1 (ko) * 2015-01-29 2021-02-23 삼성디스플레이 주식회사 데이터 보상기 및 이를 포함하는 표시 장치
KR102493814B1 (ko) * 2016-06-29 2023-02-02 에스케이하이닉스 주식회사 메모리 장치
KR20180047835A (ko) * 2016-11-01 2018-05-10 에스케이하이닉스 주식회사 저항성 메모리 장치
KR102771664B1 (ko) * 2016-11-23 2025-02-25 에스케이하이닉스 주식회사 피크 커런트 분산이 가능한 상변화 메모리 장치
US10580491B2 (en) * 2018-03-23 2020-03-03 Silicon Storage Technology, Inc. System and method for managing peak power demand and noise in non-volatile memory array
US10867661B2 (en) 2019-04-30 2020-12-15 Micron Technology, Inc. Main word line driver circuit
US10910049B2 (en) * 2019-04-30 2021-02-02 Micron Technology, Inc. Sub-word line driver circuit
US11183236B2 (en) 2019-07-31 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell with built-in amplifying function, memory device and method using the same
US12456510B2 (en) * 2021-12-20 2025-10-28 Micron Technology, Inc. Memory device control schemes, and associated methods, devices, and systems

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163495A (en) * 1999-09-17 2000-12-19 Cypress Semiconductor Corp. Architecture, method(s) and circuitry for low power memories
JP4540352B2 (ja) * 2003-09-12 2010-09-08 ルネサスエレクトロニクス株式会社 記憶装置
KR100597636B1 (ko) * 2004-06-08 2006-07-05 삼성전자주식회사 상 변화 반도체 메모리 장치
KR100630744B1 (ko) * 2005-03-21 2006-10-02 삼성전자주식회사 워드라인 구동회로의 레이아웃 면적을 감소시킨 반도체메모리 장치
KR100699848B1 (ko) * 2005-06-21 2007-03-27 삼성전자주식회사 코어 구조가 개선된 상 변화 메모리 장치
KR100735525B1 (ko) * 2006-01-04 2007-07-04 삼성전자주식회사 상변화 메모리 장치
JP2007201081A (ja) * 2006-01-25 2007-08-09 Elpida Memory Inc 半導体記憶装置
KR100719383B1 (ko) * 2006-04-12 2007-05-18 삼성전자주식회사 멀티 프로그램 방법을 사용하는 상 변화 메모리 장치
US7525866B2 (en) * 2006-04-19 2009-04-28 Freescale Semiconductor, Inc. Memory circuit
US7450414B2 (en) * 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
US8009476B2 (en) * 2006-09-19 2011-08-30 Samsung Electronics Co., Ltd. Semiconductor memory device using variable resistor
KR101258983B1 (ko) * 2006-09-19 2013-04-29 삼성전자주식회사 가변저항 소자를 이용한 반도체 메모리 장치 및 그 동작방법
KR100909627B1 (ko) * 2007-10-10 2009-07-27 주식회사 하이닉스반도체 플래시 메모리소자
KR101317754B1 (ko) * 2007-10-12 2013-10-11 삼성전자주식회사 상 변화 메모리 장치
JP5222619B2 (ja) * 2008-05-02 2013-06-26 株式会社日立製作所 半導体装置
KR20090117189A (ko) * 2008-05-09 2009-11-12 삼성전자주식회사 멀티 라이트를 위한 효율적인 코아 구조를 갖는 반도체메모리 장치
JP2010044827A (ja) * 2008-08-13 2010-02-25 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
CA2793927A1 (en) 2011-11-03
JP2013527550A (ja) 2013-06-27
WO2011134079A1 (en) 2011-11-03
CN102859603A (zh) 2013-01-02
KR20130107199A (ko) 2013-10-01
EP2564391A4 (en) 2015-09-02
WO2011134079A8 (en) 2012-01-12
TW201203250A (en) 2012-01-16
EP2564391A1 (en) 2013-03-06
US20110261613A1 (en) 2011-10-27

Similar Documents

Publication Publication Date Title
JP5602941B2 (ja) １つおきの選択を伴う相変化メモリアレイブロック
CN101546602B (zh) 使用可变电阻元件的非易失性存储器设备
US7460386B2 (en) Layout method of a semiconductor memory device
US7463511B2 (en) Phase change memory device using multiprogramming method
US7821865B2 (en) Nonvolatile memory device using variable resistive elements
US8027192B2 (en) Resistive memory devices using assymetrical bitline charging and discharging
US20130021844A1 (en) Phase change memory with double write drivers
KR100630744B1 (ko) 워드라인 구동회로의 레이아웃 면적을 감소시킨 반도체메모리 장치
US8194447B2 (en) Non-volatile memory device using variable resistance element with an improved write performance
KR101416834B1 (ko) 저항체를 이용한 비휘발성 메모리 장치
US7852666B2 (en) Nonvolatile memory using resistance material
US20090040819A1 (en) Nonvolatile memory device using resistive elements and an associated driving method
KR100781982B1 (ko) 반도체 메모리 장치 및 워드라인 콘택들의 레이아웃 구조
KR20100035446A (ko) 비휘발성 메모리 장치 및 그 구동 방법
US20090310403A1 (en) Nonvolatile memory device using variable resistive element
KR20100022784A (ko) 저항체를 이용한 비휘발성 메모리 장치
KR100604935B1 (ko) 코어 면적을 감소시킨 반도체 메모리 장치
US8116154B2 (en) Semiconductor memory device with a write control circuit commonly provided for a plurality of pages
TW202244928A (zh) 可變電阻記憶體裝置、包括其的記憶體系統及驅動其的方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131220

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20131220

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20140114

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20140127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140225

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140523

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140530

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140623

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140722

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140820

R150 Certificate of patent or registration of utility model

Ref document number: 5602941

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees