KR20120082901A - 오목 구조들에서 연속적 루테늄 필름 상 다중-단계 구리 도금 방법들 - Google Patents

오목 구조들에서 연속적 루테늄 필름 상 다중-단계 구리 도금 방법들 Download PDF

Info

Publication number
KR20120082901A
KR20120082901A KR1020127010660A KR20127010660A KR20120082901A KR 20120082901 A KR20120082901 A KR 20120082901A KR 1020127010660 A KR1020127010660 A KR 1020127010660A KR 20127010660 A KR20127010660 A KR 20127010660A KR 20120082901 A KR20120082901 A KR 20120082901A
Authority
KR
South Korea
Prior art keywords
continuous
metal
concave structure
metal layer
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127010660A
Other languages
English (en)
Korean (ko)
Inventor
프랭크 엠. 세리오
시게루 미즈노
조나단 레이드
토마스 포누스웨미
Original Assignee
노벨러스 시스템즈, 인코포레이티드
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 노벨러스 시스템즈, 인코포레이티드, 도쿄엘렉트론가부시키가이샤 filed Critical 노벨러스 시스템즈, 인코포레이티드
Publication of KR20120082901A publication Critical patent/KR20120082901A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/161Process or apparatus coating on selected surface areas by direct patterning from plating step, e.g. inkjet
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1651Two or more layers only obtained by electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1689After-treatment
    • C23C18/1692Heat-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • C25D5/50After-treatment of electroplated surfaces by heat-treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43Chemical deposition, e.g. chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34Pretreatment of metallic surfaces to be electroplated
    • C25D5/38Pretreatment of metallic surfaces to be electroplated of refractory metals or nickel

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020127010660A 2009-09-30 2010-09-30 오목 구조들에서 연속적 루테늄 필름 상 다중-단계 구리 도금 방법들 Ceased KR20120082901A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/571,162 US8076241B2 (en) 2009-09-30 2009-09-30 Methods for multi-step copper plating on a continuous ruthenium film in recessed features
US12/571,162 2009-09-30

Publications (1)

Publication Number Publication Date
KR20120082901A true KR20120082901A (ko) 2012-07-24

Family

ID=43743696

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127010660A Ceased KR20120082901A (ko) 2009-09-30 2010-09-30 오목 구조들에서 연속적 루테늄 필름 상 다중-단계 구리 도금 방법들

Country Status (6)

Country Link
US (1) US8076241B2 (https=)
JP (1) JP2013507008A (https=)
KR (1) KR20120082901A (https=)
CN (1) CN102859035A (https=)
TW (1) TW201113934A (https=)
WO (1) WO2011041522A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026059790A1 (en) * 2024-09-13 2026-03-19 Applied Materials, Inc. Carbon gapfill layer formation

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5409652B2 (ja) * 2008-12-09 2014-02-05 株式会社アルバック 窒化タンタル膜の形成方法
US20110204518A1 (en) * 2010-02-23 2011-08-25 Globalfoundries Inc. Scalability with reduced contact resistance
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US8661664B2 (en) * 2010-07-19 2014-03-04 International Business Machines Corporation Techniques for forming narrow copper filled vias having improved conductivity
KR101780050B1 (ko) * 2011-02-28 2017-09-20 삼성전자주식회사 반도체 기억 소자 및 반도체 기억 소자의 형성 방법
JP5862353B2 (ja) * 2011-08-05 2016-02-16 東京エレクトロン株式会社 半導体装置の製造方法
US8518818B2 (en) 2011-09-16 2013-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Reverse damascene process
US9214383B2 (en) * 2013-01-18 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor integrated circuit fabrication
US9171801B2 (en) * 2013-05-09 2015-10-27 Globalfoundries U.S. 2 Llc E-fuse with hybrid metallization
US9536830B2 (en) 2013-05-09 2017-01-03 Globalfoundries Inc. High performance refractory metal / copper interconnects to eliminate electromigration
JP6478982B2 (ja) * 2013-09-26 2019-03-06 アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH 基材表面を金属化するための新規の密着性促進方法
JP2015160963A (ja) * 2014-02-26 2015-09-07 東京エレクトロン株式会社 ルテニウム膜の成膜方法および成膜装置、ならびに半導体装置の製造方法
FR3017993B1 (fr) * 2014-02-27 2017-08-11 Commissariat Energie Atomique Procede de realisation d'une structure par assemblage d'au moins deux elements par collage direct
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9875890B2 (en) * 2015-03-24 2018-01-23 Lam Research Corporation Deposition of metal dielectric film for hardmasks
JP6329199B2 (ja) * 2016-03-30 2018-05-23 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
KR102251209B1 (ko) * 2016-06-15 2021-05-11 어플라이드 머티어리얼스, 인코포레이티드 고 전력 플라즈마 에칭 프로세스들을 위한 가스 분배 플레이트 조립체
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
CN107731703A (zh) * 2017-08-31 2018-02-23 长江存储科技有限责任公司 一种互连结构及其制作方法和半导体器件的制作方法
US11315943B2 (en) * 2017-09-05 2022-04-26 Applied Materials, Inc. Bottom-up approach to high aspect ratio hole formation in 3D memory structures
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
WO2019079199A1 (en) * 2017-10-19 2019-04-25 Lam Research Corporation MULTIBANIC PLACING OF A SINGLE METAL
US11284510B2 (en) 2018-04-17 2022-03-22 Board Of Trustees Of Michigan State University Controlled wetting and spreading of metals on substrates using porous interlayers and related articles
US11631680B2 (en) * 2018-10-18 2023-04-18 Applied Materials, Inc. Methods and apparatus for smoothing dynamic random access memory bit line metal
KR20240160679A (ko) 2019-05-01 2024-11-11 램 리써치 코포레이션 변조된 원자 층 증착
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
CN114514340B (zh) 2019-07-26 2025-03-21 朗姆研究公司 先进封装应用的差别对比镀覆
JP7713456B2 (ja) 2020-01-10 2025-07-25 ラム リサーチ コーポレーション Tsv処理窓ならびに長いパルス出力および傾斜部形成による充填性能強化
JP7206355B2 (ja) * 2020-11-12 2023-01-17 アプライド マテリアルズ インコーポレイテッド ダイナミックランダムアクセスメモリビット線金属を滑らかにするための方法及び装置
US12543521B2 (en) * 2021-06-29 2026-02-03 Applied Materials, Inc. Methods of forming memory device with reduced resistivity
US20230197620A1 (en) * 2021-12-21 2023-06-22 Intel Corporation Methods, systems, apparatus, and articles of manufacture for integrated circuit package substrates with high aspect ratio through glass vias

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0524931A (ja) 1991-07-16 1993-02-02 Hitachi Metals Ltd 窒化アルミニウム焼結体
US5888870A (en) 1997-10-22 1999-03-30 Advanced Micro Devices, Inc. Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate
JPH11168096A (ja) 1997-12-04 1999-06-22 Sony Corp 高誘電酸化膜の形成方法
US6200898B1 (en) 1999-10-25 2001-03-13 Vanguard International Semiconductor Corporation Global planarization process for high step DRAM devices via use of HF vapor etching
US8877000B2 (en) 2001-03-02 2014-11-04 Tokyo Electron Limited Shower head gas injection apparatus with secondary high pressure pulsed gas injection
JP4895430B2 (ja) 2001-03-22 2012-03-14 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US6506668B1 (en) * 2001-06-22 2003-01-14 Advanced Micro Devices, Inc. Utilization of annealing enhanced or repaired seed layer to improve copper interconnect reliability
JP4921652B2 (ja) 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ.ヴェー. イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
US6797599B2 (en) 2001-08-31 2004-09-28 Texas Instruments Incorporated Gate structure and method
EP1294021A1 (de) 2001-08-31 2003-03-19 Infineon Technologies AG Kondensatoreinrichtung für eine Halbleiterschaltungsanordnung und Verfahren zu deren Herstellung
JP3611545B2 (ja) * 2001-12-20 2005-01-19 株式会社荏原製作所 めっき装置
JP3756456B2 (ja) 2002-03-07 2006-03-15 富士通株式会社 半導体装置の製造方法
JP3588607B2 (ja) 2002-03-29 2004-11-17 株式会社東芝 電界効果トランジスタ
US6680130B2 (en) 2002-05-28 2004-01-20 Agere Systems, Inc. High K dielectric material and method of making a high K dielectric material
US6730164B2 (en) 2002-08-28 2004-05-04 Micron Technology, Inc. Systems and methods for forming strontium- and/or barium-containing layers
US6794284B2 (en) 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US20040051126A1 (en) 2002-09-16 2004-03-18 Structured Materials Inc. Compositionally engineered CexMnyO3 and semiconductor devices based thereon
US6858524B2 (en) 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
EP1570525B1 (en) 2002-12-09 2015-12-02 Imec Method for forming a dielectric stack
US6828200B2 (en) 2003-01-03 2004-12-07 Texas Instruments Incorporated Multistage deposition that incorporates nitrogen via an intermediate step
US7071519B2 (en) 2003-01-08 2006-07-04 Texas Instruments Incorporated Control of high-k gate dielectric film composition profile for property optimization
US6974768B1 (en) 2003-01-15 2005-12-13 Novellus Systems, Inc. Methods of providing an adhesion layer for adhesion of barrier and/or seed layers to dielectric films
JP3920235B2 (ja) 2003-03-24 2007-05-30 株式会社ルネサステクノロジ 半導体装置の製造方法
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US20050274621A1 (en) * 2004-06-10 2005-12-15 Zhi-Wen Sun Method of barrier layer surface treatment to enable direct copper plating on barrier metal
US7378129B2 (en) 2003-08-18 2008-05-27 Micron Technology, Inc. Atomic layer deposition methods of forming conductive metal nitride comprising layers
US7135361B2 (en) 2003-12-11 2006-11-14 Texas Instruments Incorporated Method for fabricating transistor gate structures and gate dielectrics thereof
US6979623B2 (en) 2003-12-17 2005-12-27 Texas Instruments Incorporated Method for fabricating split gate transistor device having high-k dielectrics
JP2005191482A (ja) 2003-12-26 2005-07-14 Semiconductor Leading Edge Technologies Inc 半導体装置及びその製造方法
WO2005065357A2 (en) 2003-12-29 2005-07-21 Translucent, Inc. Rare earth-oxides, rare-earth-nitrides, rare earth-phosphides and ternary alloys with silicon
JP2005340721A (ja) 2004-05-31 2005-12-08 Anelva Corp 高誘電率誘電体膜を堆積する方法
CN1965110A (zh) * 2004-06-10 2007-05-16 应用材料公司 能够在阻挡金属上直接镀铜的阻挡层表面处理的方法
KR100589040B1 (ko) 2004-08-05 2006-06-14 삼성전자주식회사 막 형성방법 및 이를 이용한 반도체 장치의 커패시터제조방법
US7138680B2 (en) 2004-09-14 2006-11-21 Infineon Technologies Ag Memory device with floating gate stack
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7279421B2 (en) 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US7442267B1 (en) * 2004-11-29 2008-10-28 Novellus Systems, Inc. Anneal of ruthenium seed layer to improve copper plating
US7064043B1 (en) 2004-12-09 2006-06-20 Texas Instruments Incorporated Wafer bonded MOS decoupling capacitor
US7312139B2 (en) 2005-01-03 2007-12-25 United Microelectronics Corp. Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device
US7316962B2 (en) 2005-01-07 2008-01-08 Infineon Technologies Ag High dielectric constant materials
WO2006081234A2 (en) * 2005-01-27 2006-08-03 Applied Materials, Inc. Ruthenium layer deposition apparatus and method
JP2006245558A (ja) * 2005-02-04 2006-09-14 Advanced Lcd Technologies Development Center Co Ltd 銅配線層、銅配線層の形成方法、半導体装置、及び半導体装置の製造方法
US7498247B2 (en) 2005-02-23 2009-03-03 Micron Technology, Inc. Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics
US7432139B2 (en) 2005-06-29 2008-10-07 Amberwave Systems Corp. Methods for forming dielectrics and metal electrodes
US20070077750A1 (en) 2005-09-06 2007-04-05 Paul Ma Atomic layer deposition processes for ruthenium materials
US7456102B1 (en) 2005-10-11 2008-11-25 Novellus Systems, Inc. Electroless copper fill process
US7968455B2 (en) * 2006-10-17 2011-06-28 Enthone Inc. Copper deposition for filling features in manufacture of microelectronic devices
US20080296768A1 (en) 2006-12-14 2008-12-04 Chebiam Ramanan V Copper nucleation in interconnects having ruthenium layers
JP4397399B2 (ja) * 2007-02-15 2010-01-13 富士通株式会社 半導体装置の製造方法
US7470617B2 (en) * 2007-03-01 2008-12-30 Intel Corporation Treating a liner layer to reduce surface oxides
US7799684B1 (en) 2007-03-05 2010-09-21 Novellus Systems, Inc. Two step process for uniform across wafer deposition and void free filling on ruthenium coated wafers
US20080242088A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Method of forming low resistivity copper film structures
US8058164B2 (en) 2007-06-04 2011-11-15 Lam Research Corporation Methods of fabricating electronic devices using direct copper plating
US20090020434A1 (en) * 2007-07-02 2009-01-22 Akira Susaki Substrate processing method and substrate processing apparatus
JP2009099585A (ja) * 2007-10-12 2009-05-07 Panasonic Corp 埋め込み配線の形成方法
US7964506B1 (en) 2008-03-06 2011-06-21 Novellus Systems, Inc. Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026059790A1 (en) * 2024-09-13 2026-03-19 Applied Materials, Inc. Carbon gapfill layer formation

Also Published As

Publication number Publication date
WO2011041522A2 (en) 2011-04-07
JP2013507008A (ja) 2013-02-28
WO2011041522A3 (en) 2012-01-05
US8076241B2 (en) 2011-12-13
TW201113934A (en) 2011-04-16
US20110076390A1 (en) 2011-03-31
CN102859035A (zh) 2013-01-02

Similar Documents

Publication Publication Date Title
US8076241B2 (en) Methods for multi-step copper plating on a continuous ruthenium film in recessed features
CN101981686B (zh) 用于将选择性的低温钌沉积集成到半导体器件的铜金属化中的方法
JP2013507008A5 (https=)
JP5674669B2 (ja) ルテニウム金属キャップ層を形成する方法
US7838441B2 (en) Deposition and densification process for titanium nitride barrier layers
US20120252210A1 (en) Method for modifying metal cap layers in semiconductor devices
US6645847B2 (en) Microelectronic interconnect material with adhesion promotion layer and fabrication method
US10784157B2 (en) Doped tantalum nitride for copper barrier applications
US7829454B2 (en) Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US7704879B2 (en) Method of forming low-resistivity recessed features in copper metallization
US20100151676A1 (en) Densification process for titanium nitride layer for submicron applications
US7713876B2 (en) Method for integrating a ruthenium layer with bulk copper in copper metallization
US20090209101A1 (en) Ruthenium alloy film for copper interconnects
US7473634B2 (en) Method for integrated substrate processing in copper metallization
WO2009109934A1 (en) Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
WO2007117802A2 (en) Method for integrating a conformal ruthenium layer into copper metallization of high aspect ratio features
US20070069383A1 (en) Semiconductor device containing a ruthenium diffusion barrier and method of forming
JP2002280387A (ja) 半導体素子の金属配線形成方法
JP4065351B2 (ja) 欠陥密度の低いTi−Si−N及びTi−B−Nベースの絶縁保護性障壁膜の製法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000