KR20120062802A - 스퍼터링 타겟용 구리재료 및 그 제조방법 - Google Patents
스퍼터링 타겟용 구리재료 및 그 제조방법 Download PDFInfo
- Publication number
- KR20120062802A KR20120062802A KR1020127007190A KR20127007190A KR20120062802A KR 20120062802 A KR20120062802 A KR 20120062802A KR 1020127007190 A KR1020127007190 A KR 1020127007190A KR 20127007190 A KR20127007190 A KR 20127007190A KR 20120062802 A KR20120062802 A KR 20120062802A
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- purity
- sputtering
- hot
- plane
- Prior art date
Links
- 239000010949 copper Substances 0.000 title claims abstract description 84
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 81
- 239000000463 material Substances 0.000 title claims abstract description 74
- 238000005477 sputtering target Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 49
- 238000004544 sputter deposition Methods 0.000 claims abstract description 25
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 6
- 238000001192 hot extrusion Methods 0.000 claims description 24
- 238000001816 cooling Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 239000010408 film Substances 0.000 description 33
- 238000001125 extrusion Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 8
- 238000005098 hot rolling Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000005097 cold rolling Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005096 rolling process Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005242 forging Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005482 strain hardening Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- -1 molybdenum Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2009-198982 | 2009-08-28 | ||
JP2009198982 | 2009-08-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020147034044A Division KR101515340B1 (ko) | 2009-08-28 | 2010-08-26 | 스퍼터링 타겟용 구리재료의 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120062802A true KR20120062802A (ko) | 2012-06-14 |
Family
ID=43628009
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020147034044A KR101515340B1 (ko) | 2009-08-28 | 2010-08-26 | 스퍼터링 타겟용 구리재료의 제조방법 |
KR1020127007190A KR20120062802A (ko) | 2009-08-28 | 2010-08-26 | 스퍼터링 타겟용 구리재료 및 그 제조방법 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020147034044A KR101515340B1 (ko) | 2009-08-28 | 2010-08-26 | 스퍼터링 타겟용 구리재료의 제조방법 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4974197B2 (fr) |
KR (2) | KR101515340B1 (fr) |
CN (1) | CN102482767B (fr) |
TW (1) | TWI504769B (fr) |
WO (1) | WO2011024909A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102249087B1 (ko) * | 2019-11-13 | 2021-05-07 | (주)하나금속 | 판형 구리 스퍼터링 타겟 및 그 제조 방법 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5793069B2 (ja) * | 2011-12-26 | 2015-10-14 | 株式会社Shカッパープロダクツ | スパッタリング用銅ターゲット材の製造方法 |
WO2013133353A1 (fr) * | 2012-03-09 | 2013-09-12 | 古河電気工業株式会社 | Cible de pulvérisation |
JP6182296B2 (ja) * | 2012-03-09 | 2017-08-16 | 古河電気工業株式会社 | スパッタリングターゲット、及び、その製造方法 |
JP5950632B2 (ja) * | 2012-03-09 | 2016-07-13 | 古河電気工業株式会社 | スパッタリングターゲットの製造方法 |
JP5778636B2 (ja) * | 2012-07-30 | 2015-09-16 | 株式会社Shカッパープロダクツ | スパッタリング用銅ターゲット材及びスパッタリング用銅ターゲット材の製造方法 |
JP2014043643A (ja) * | 2012-08-03 | 2014-03-13 | Kobelco Kaken:Kk | Cu合金薄膜形成用スパッタリングターゲットおよびその製造方法 |
JP6202718B2 (ja) * | 2013-03-26 | 2017-09-27 | 三菱マテリアル株式会社 | 放熱基板 |
JP5962707B2 (ja) | 2013-07-31 | 2016-08-03 | 三菱マテリアル株式会社 | 電子・電気機器用銅合金、電子・電気機器用銅合金塑性加工材、電子・電気機器用銅合金塑性加工材の製造方法、電子・電気機器用部品及び端子 |
CN104694888B (zh) * | 2013-12-09 | 2017-05-10 | 有研亿金新材料股份有限公司 | 一种高纯铜靶材的制备方法 |
JP6339625B2 (ja) * | 2016-05-25 | 2018-06-06 | 古河電気工業株式会社 | スパッタリングターゲット |
TWI754542B (zh) | 2016-07-11 | 2022-02-01 | 日商半導體能源研究所股份有限公司 | 濺射靶材及金屬氧化物 |
CN108231598A (zh) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电技术有限公司 | 金属氧化物薄膜晶体管的制备方法、阵列基板的制备方法 |
KR102429213B1 (ko) * | 2018-05-21 | 2022-08-04 | 가부시키가이샤 아루박 | 스퍼터링 타겟 및 그 제조 방법 |
TWI778503B (zh) * | 2020-06-26 | 2022-09-21 | 泰商東方銅業股份有限公司 | 由熱擠製技術製備銅圓柱靶以用於使用濺射法之薄膜塗佈之方法 |
TWI824162B (zh) * | 2020-06-29 | 2023-12-01 | 泰商東方銅業股份有限公司 | 從熱擠壓程序生產用於藉由濺射法的薄膜塗覆技術之銅靶之方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10195611A (ja) * | 1996-12-27 | 1998-07-28 | Dowa Mining Co Ltd | 結晶方位の制御されたfcc金属及びその製造方法 |
JPH10195609A (ja) * | 1996-12-27 | 1998-07-28 | Dowa Mining Co Ltd | 結晶方位の制御されたfcc金属及びその製造方法 |
JPH10195610A (ja) * | 1996-12-27 | 1998-07-28 | Dowa Mining Co Ltd | 結晶方位の制御されたfcc金属及びその製造方法 |
JP3975414B2 (ja) * | 1997-11-28 | 2007-09-12 | 日立金属株式会社 | スパッタリング用銅ターゲットおよびその製造方法 |
US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
US6749699B2 (en) * | 2000-08-09 | 2004-06-15 | Olin Corporation | Silver containing copper alloy |
US7871727B2 (en) * | 2005-07-25 | 2011-01-18 | 3M Innovative Properties Company | Alloy composition for lithium ion batteries |
CN101215685B (zh) * | 2007-12-27 | 2011-06-22 | 重庆跃进机械厂有限公司 | 制备减摩层内锡含量阶升pvd轴瓦的方法 |
-
2010
- 2010-08-26 JP JP2011502972A patent/JP4974197B2/ja active Active
- 2010-08-26 KR KR1020147034044A patent/KR101515340B1/ko not_active IP Right Cessation
- 2010-08-26 WO PCT/JP2010/064509 patent/WO2011024909A1/fr active Application Filing
- 2010-08-26 CN CN201080038093.7A patent/CN102482767B/zh not_active Expired - Fee Related
- 2010-08-26 KR KR1020127007190A patent/KR20120062802A/ko active Application Filing
- 2010-08-27 TW TW099128733A patent/TWI504769B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102249087B1 (ko) * | 2019-11-13 | 2021-05-07 | (주)하나금속 | 판형 구리 스퍼터링 타겟 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN102482767B (zh) | 2014-05-07 |
WO2011024909A1 (fr) | 2011-03-03 |
TW201111536A (en) | 2011-04-01 |
KR20150004922A (ko) | 2015-01-13 |
CN102482767A (zh) | 2012-05-30 |
JPWO2011024909A1 (ja) | 2013-01-31 |
JP4974197B2 (ja) | 2012-07-11 |
TWI504769B (zh) | 2015-10-21 |
KR101515340B1 (ko) | 2015-04-24 |
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