KR20120001776A - 자기-조직화 열전기 재료 - Google Patents

자기-조직화 열전기 재료 Download PDF

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Publication number
KR20120001776A
KR20120001776A KR1020117025012A KR20117025012A KR20120001776A KR 20120001776 A KR20120001776 A KR 20120001776A KR 1020117025012 A KR1020117025012 A KR 1020117025012A KR 20117025012 A KR20117025012 A KR 20117025012A KR 20120001776 A KR20120001776 A KR 20120001776A
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KR
South Korea
Prior art keywords
combination
thermoelectric
thermoelectric material
metal
phase
Prior art date
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Withdrawn
Application number
KR1020117025012A
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English (en)
Korean (ko)
Inventor
프랑크 하스
얀 디에터 쾨니그
Original Assignee
바스프 에스이
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Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20120001776A publication Critical patent/KR20120001776A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B17/00—Sulfur; Compounds thereof
    • C01B17/20—Methods for preparing sulfides or polysulfides, in general
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/129—Energy recovery, e.g. by cogeneration, H2recovery or pressure recovery turbines

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
KR1020117025012A 2009-03-24 2010-03-23 자기-조직화 열전기 재료 Withdrawn KR20120001776A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09156007.8 2009-03-24
EP09156007 2009-03-24

Publications (1)

Publication Number Publication Date
KR20120001776A true KR20120001776A (ko) 2012-01-04

Family

ID=42536435

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117025012A Withdrawn KR20120001776A (ko) 2009-03-24 2010-03-23 자기-조직화 열전기 재료

Country Status (10)

Country Link
US (1) US8785762B2 (enExample)
EP (1) EP2411324A2 (enExample)
JP (1) JP5636419B2 (enExample)
KR (1) KR20120001776A (enExample)
CN (1) CN102414121A (enExample)
CA (1) CA2756497A1 (enExample)
RU (1) RU2011142629A (enExample)
SG (1) SG174453A1 (enExample)
TW (1) TW201039473A (enExample)
WO (1) WO2010108912A2 (enExample)

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US8513050B1 (en) * 2010-06-15 2013-08-20 U.S. Department Of Energy Bi-Se doped with Cu, p-type semiconductor
WO2012157916A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
CN102867905B (zh) * 2012-07-27 2015-10-28 清华大学 一种Sn-S基热电化合物及其制备方法
CN102912333B (zh) * 2012-09-20 2014-05-14 上海大学 利用层层自组装制备热电薄膜的方法
WO2014063191A1 (en) * 2012-10-26 2014-05-01 Newcastle Innovation Limited Alloys with inverse microstructures
TWI472070B (zh) * 2012-12-13 2015-02-01 Ind Tech Res Inst 熱電複合材料及其製作方法
KR102097064B1 (ko) 2013-05-28 2020-04-03 삼성전자주식회사 복합열전재료, 이를 포함하는 열전소자 및 열전장치, 및 이의 제조방법
JP6252413B2 (ja) * 2013-11-19 2017-12-27 日立金属株式会社 熱電変換材料及びそれを用いた熱電変換モジュール
JP6292664B2 (ja) * 2014-01-28 2018-03-14 株式会社豊島製作所 熱電変換材料
CN104218143B (zh) * 2014-08-20 2017-06-13 中国航空工业集团公司北京航空材料研究院 一种BiAgSeTe基热电材料的制备方法
CN104388805A (zh) * 2014-10-31 2015-03-04 无锡贺邦金属制品有限公司 一种具有发热功能的复合合金材料
CN108886081B (zh) * 2016-03-31 2022-05-13 住友化学株式会社 化合物及热电转换材料
CN105755347A (zh) * 2016-04-20 2016-07-13 苏州市相城区明达复合材料厂 一种铸造用表面强化镍基硬面合金
CN105755348A (zh) * 2016-04-20 2016-07-13 苏州市相城区明达复合材料厂 一种铸造用光亮镀层合金
JP7056934B2 (ja) * 2016-12-19 2022-04-19 国立大学法人東北大学 熱電材料および熱電モジュール
JPWO2018123899A1 (ja) 2016-12-26 2019-10-31 国立大学法人名古屋大学 熱電変換材料および熱電変換素子
CN108470817B (zh) * 2018-01-19 2021-09-28 宁波工程学院 一种含Sb的P-型Cu2.856In4Te8基中高温热电材料及其制备工艺
CN111162160B (zh) * 2018-11-08 2023-09-26 中国科学院大连化学物理研究所 一种p型立方相Ge-Se基热电材料及制备方法
CN113437208B (zh) * 2020-03-23 2023-12-26 中国科学院上海硅酸盐研究所 一种制备热电厚膜的方法
CN113956042B (zh) * 2021-09-18 2023-02-03 深圳大学 一种菱方相GeSe基热电材料及其制备方法

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US5439528A (en) 1992-12-11 1995-08-08 Miller; Joel Laminated thermo element
US5448109B1 (en) 1994-03-08 1997-10-07 Tellurex Corp Thermoelectric module
JPH0969653A (ja) * 1995-08-31 1997-03-11 Isuzu Motors Ltd 熱電材料及びその製造方法
JPH09100166A (ja) * 1995-10-06 1997-04-15 Tokuyama Corp 複合焼結体
AU6783598A (en) 1997-03-31 1998-10-22 Research Triangle Institute Thin-film thermoelectric device and fabrication method of same
JP4324999B2 (ja) * 1998-11-27 2009-09-02 アイシン精機株式会社 熱電半導体組成物及びその製造方法
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WO2006085929A2 (en) 2004-06-14 2006-08-17 Delphi Technologies, Inc. Thermoelectric materials comprising nanoscale inclusions to enhance seebeck coefficient
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US8716589B2 (en) * 2006-03-16 2014-05-06 Basf Aktiengesellschaft Doped lead tellurides for thermoelectric applications
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CN101681979B (zh) * 2007-06-05 2012-10-24 丰田自动车株式会社 热电转换元件及其制造方法
TW200933940A (en) 2007-12-28 2009-08-01 Basf Se Extrusion process for preparing improved thermoelectric materials
DE102008005694B4 (de) 2008-01-23 2015-05-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines thermoelektrischen Bauelementes
CN101965313A (zh) 2008-02-07 2011-02-02 巴斯夫欧洲公司 用于热电应用的掺杂的碲化锡
WO2010080279A2 (en) * 2008-12-19 2010-07-15 Carrier Corporation Bulk-processed, enhanced figure-of-merit thermoelectric materials
RU2011138927A (ru) 2009-02-25 2013-04-10 Басф Се Способ изготовления гибких металлических контактов
SG174559A1 (en) * 2009-04-02 2011-10-28 Basf Se Thermoelectric module with insulated substrate
CA2768979A1 (en) * 2009-07-27 2011-02-03 Basf Se Method for sintering thermoelectric materials

Also Published As

Publication number Publication date
WO2010108912A2 (de) 2010-09-30
EP2411324A2 (de) 2012-02-01
US20120001117A1 (en) 2012-01-05
TW201039473A (en) 2010-11-01
WO2010108912A3 (de) 2011-06-03
RU2011142629A (ru) 2013-04-27
JP5636419B2 (ja) 2014-12-03
US8785762B2 (en) 2014-07-22
CN102414121A (zh) 2012-04-11
JP2012521648A (ja) 2012-09-13
SG174453A1 (en) 2011-10-28
CA2756497A1 (en) 2010-09-30

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Patent event date: 20111021

Patent event code: PA01051R01D

Comment text: International Patent Application

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PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20150323

Comment text: Request for Examination of Application

PC1202 Submission of document of withdrawal before decision of registration

Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment)

Patent event code: PC12021R01D

Patent event date: 20150923

WITB Written withdrawal of application