KR20100119783A - 반도체 웨이퍼의 세정방법 및 세정장치 - Google Patents

반도체 웨이퍼의 세정방법 및 세정장치 Download PDF

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Publication number
KR20100119783A
KR20100119783A KR1020107019621A KR20107019621A KR20100119783A KR 20100119783 A KR20100119783 A KR 20100119783A KR 1020107019621 A KR1020107019621 A KR 1020107019621A KR 20107019621 A KR20107019621 A KR 20107019621A KR 20100119783 A KR20100119783 A KR 20100119783A
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KR
South Korea
Prior art keywords
semiconductor wafer
water
ozone
cleaning
microbubbles
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Application number
KR1020107019621A
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English (en)
Korean (ko)
Inventor
마사요시 다카하시
가네오 치바
Original Assignee
도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠
가부시키가이샤 레오 겐큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠, 가부시키가이샤 레오 겐큐쇼 filed Critical 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠
Publication of KR20100119783A publication Critical patent/KR20100119783A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020107019621A 2008-02-07 2009-02-05 반도체 웨이퍼의 세정방법 및 세정장치 KR20100119783A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-028109 2008-02-07
JP2008028109 2008-02-07

Publications (1)

Publication Number Publication Date
KR20100119783A true KR20100119783A (ko) 2010-11-10

Family

ID=40952211

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019621A KR20100119783A (ko) 2008-02-07 2009-02-05 반도체 웨이퍼의 세정방법 및 세정장치

Country Status (4)

Country Link
JP (1) JP5540351B2 (ja)
KR (1) KR20100119783A (ja)
CN (1) CN101939826B (ja)
WO (1) WO2009099138A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109860025A (zh) * 2019-02-01 2019-06-07 天津中环领先材料技术有限公司 一种研磨硅片清洗方法
KR20210114286A (ko) 2020-03-10 2021-09-23 주식회사 동진쎄미켐 파티클 디펙트 제거 조성물 및 이를 이용한 파티클 디펙트 제거 방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011050931A (ja) * 2009-09-04 2011-03-17 Reo Laboratory Co Ltd 水中における水酸基ラジカルの生成方法
US20110130009A1 (en) * 2009-11-30 2011-06-02 Lam Research Ag Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
JP5423388B2 (ja) * 2009-12-25 2014-02-19 三菱マテリアル株式会社 シリコン表面の清浄化方法
JP5736567B2 (ja) * 2010-10-20 2015-06-17 国立研究開発法人産業技術総合研究所 半導体ウエハの洗浄方法
WO2012090815A1 (ja) * 2010-12-28 2012-07-05 シャープ株式会社 レジスト除去装置及びレジスト除去方法
JP5690168B2 (ja) * 2011-02-25 2015-03-25 芝浦メカトロニクス株式会社 基板洗浄装置、基板洗浄方法、表示装置の製造装置及び表示装置の製造方法
JP6099996B2 (ja) * 2013-01-29 2017-03-22 信越半導体株式会社 オゾン水を用いた洗浄方法及び洗浄装置
KR20160138280A (ko) * 2014-03-31 2016-12-02 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 반도체의 제조 방법 및 웨이퍼 기판의 세정 방법
JP6112330B1 (ja) * 2016-05-10 2017-04-12 Jsr株式会社 半導体洗浄用組成物および洗浄方法
CN106098592B (zh) * 2016-06-20 2019-11-22 北京七星华创电子股份有限公司 微纳米气泡清洗晶圆的系统及方法
KR102455392B1 (ko) 2018-07-30 2022-10-14 삼성전자주식회사 세정수 처리 장치, 플라즈마 리액션 탱크 및 세정수 처리 방법
JP7426620B2 (ja) * 2020-01-23 2024-02-02 国立大学法人東北大学 ウエハ基板の洗浄方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3043315B2 (ja) * 1998-08-12 2000-05-22 株式会社五月工業 気泡発生装置
JP2001351893A (ja) * 2000-06-05 2001-12-21 Sumitomo Precision Prod Co Ltd 基板処理方法
JP2003265938A (ja) * 2002-03-14 2003-09-24 Shigen Kaihatsu Kk 微細気泡発生装置および微細気泡発生システム
JP2005093873A (ja) * 2003-09-19 2005-04-07 Ebara Corp 基板処理装置
TW200802575A (en) * 2006-03-20 2008-01-01 Eiji Matsumura Substrate cleaning method and substrate cleaning apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109860025A (zh) * 2019-02-01 2019-06-07 天津中环领先材料技术有限公司 一种研磨硅片清洗方法
KR20210114286A (ko) 2020-03-10 2021-09-23 주식회사 동진쎄미켐 파티클 디펙트 제거 조성물 및 이를 이용한 파티클 디펙트 제거 방법

Also Published As

Publication number Publication date
CN101939826A (zh) 2011-01-05
WO2009099138A1 (ja) 2009-08-13
JPWO2009099138A1 (ja) 2011-05-26
JP5540351B2 (ja) 2014-07-02
CN101939826B (zh) 2012-08-22

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