KR20100105583A - 반도체 기판들의 ｈｆ 처리들에서 워터마크들의 감소 - Google Patents

반도체 기판들의 ｈｆ 처리들에서 워터마크들의 감소 Download PDF

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Publication number
KR20100105583A
KR20100105583A KR1020107012414A KR20107012414A KR20100105583A KR 20100105583 A KR20100105583 A KR 20100105583A KR 1020107012414 A KR1020107012414 A KR 1020107012414A KR 20107012414 A KR20107012414 A KR 20107012414A KR 20100105583 A KR20100105583 A KR 20100105583A
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KR
South Korea
Prior art keywords
substrate
cleaning
silicon
layer
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020107012414A
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English (en)
Korean (ko)
Inventor
칼리드 라두안느
Original Assignee
에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스
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Application filed by 에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스 filed Critical 에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스
Publication of KR20100105583A publication Critical patent/KR20100105583A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture

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  • Cleaning Or Drying Semiconductors (AREA)
KR1020107012414A 2008-01-04 2008-11-18 반도체 기판들의 ｈｆ 처리들에서 워터마크들의 감소 Withdrawn KR20100105583A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08305001A EP2077576A1 (en) 2008-01-04 2008-01-04 Process for preparing cleaned substrates suitable for epitaxial growth
EP08305001.3 2008-01-04

Publications (1)

Publication Number Publication Date
KR20100105583A true KR20100105583A (ko) 2010-09-29

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ID=39217882

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107012414A Withdrawn KR20100105583A (ko) 2008-01-04 2008-11-18 반도체 기판들의 ｈｆ 처리들에서 워터마크들의 감소

Country Status (6)

Country Link
US (1) US8076219B2 (https=)
EP (2) EP2077576A1 (https=)
JP (1) JP5432180B2 (https=)
KR (1) KR20100105583A (https=)
CN (1) CN101965625B (https=)
WO (1) WO2009086983A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103400890A (zh) * 2013-07-08 2013-11-20 浙江晶科能源有限公司 一种晶硅太阳电池pecvd色差片去膜重镀的返工工艺
CN104766793B (zh) * 2014-01-03 2017-10-31 北大方正集团有限公司 一种酸槽背面硅腐蚀方法
CN106206247A (zh) * 2015-05-25 2016-12-07 宁波时代全芯科技有限公司 清洗半导体元件的方法
CN110061094A (zh) * 2019-03-14 2019-07-26 中山瑞科新能源有限公司 一种碲化镉薄膜电池表面清洗预处理工艺

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818920B2 (ja) * 1990-01-12 1996-02-28 新日本製鐵株式会社 シリコンウェハの洗浄方法
DE4002327A1 (de) * 1990-01-26 1991-08-01 Wacker Chemitronic Verfahren zur nasschemischen behandlung von halbleiteroberflaechen und loesung zu seiner durchfuehrung
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US6348157B1 (en) * 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
JP4001662B2 (ja) * 1997-06-27 2007-10-31 株式会社半導体エネルギー研究所 シリコンの洗浄方法および多結晶シリコンの作製方法
US6346505B1 (en) * 1998-01-16 2002-02-12 Kurita Water Industries, Ltd. Cleaning solution for electromaterials and method for using same
US5932022A (en) * 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
US6429144B1 (en) * 1999-12-28 2002-08-06 Koninklijke Philips Electronics N.V. Integrated circuit manufacture method with aqueous hydrogen fluoride and nitric acid oxide etch
KR20080103609A (ko) * 2001-05-30 2008-11-27 에이에스엠 아메리카, 인코포레이티드 저온 로딩 및 소성
JP4182818B2 (ja) * 2003-06-20 2008-11-19 株式会社Ｓｕｍｃｏ 半導体基板の製造方法
FR2864457B1 (fr) * 2003-12-31 2006-12-08 Commissariat Energie Atomique Procede de nettoyage par voie humide d'une surface notamment en un materiau de type silicium germanium.
KR20060108436A (ko) * 2005-04-13 2006-10-18 매그나칩 반도체 유한회사 반도체 소자 세정용 조성물 및 이를 이용한 반도체 소자의세정 방법
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
KR100714311B1 (ko) * 2006-01-27 2007-05-02 삼성전자주식회사 실리콘 표면의 세정용액 및 이를 사용하는 반도체 소자의제조방법들
US20080169007A1 (en) * 2006-05-30 2008-07-17 Ismail Kashkoush Apparatus and method for processing a hydrophobic surface of a substrate

Also Published As

Publication number Publication date
US8076219B2 (en) 2011-12-13
WO2009086983A9 (en) 2010-07-22
WO2009086983A1 (en) 2009-07-16
EP2227821A1 (en) 2010-09-15
JP2011508981A (ja) 2011-03-17
EP2077576A1 (en) 2009-07-08
US20100255659A1 (en) 2010-10-07
CN101965625B (zh) 2012-10-03
CN101965625A (zh) 2011-02-02
JP5432180B2 (ja) 2014-03-05

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