CN101965625B - 半导体基片的hf处理中水印的减少 - Google Patents

半导体基片的hf处理中水印的减少 Download PDF

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Publication number
CN101965625B
CN101965625B CN2008801200811A CN200880120081A CN101965625B CN 101965625 B CN101965625 B CN 101965625B CN 2008801200811 A CN2008801200811 A CN 2008801200811A CN 200880120081 A CN200880120081 A CN 200880120081A CN 101965625 B CN101965625 B CN 101965625B
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China
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substrate
weight
cleaning
silicon
acid
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CN2008801200811A
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Chinese (zh)
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CN101965625A (zh
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哈里德·拉德万
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture

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  • Cleaning Or Drying Semiconductors (AREA)
CN2008801200811A 2008-01-04 2008-11-18 半导体基片的hf处理中水印的减少 Active CN101965625B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08305001A EP2077576A1 (en) 2008-01-04 2008-01-04 Process for preparing cleaned substrates suitable for epitaxial growth
EP08305001.3 2008-01-04
PCT/EP2008/065771 WO2009086983A1 (en) 2008-01-04 2008-11-18 Reduction of watermarks in hf treatments of semiconducting substrates

Publications (2)

Publication Number Publication Date
CN101965625A CN101965625A (zh) 2011-02-02
CN101965625B true CN101965625B (zh) 2012-10-03

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ID=39217882

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CN2008801200811A Active CN101965625B (zh) 2008-01-04 2008-11-18 半导体基片的hf处理中水印的减少

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US (1) US8076219B2 (https=)
EP (2) EP2077576A1 (https=)
JP (1) JP5432180B2 (https=)
KR (1) KR20100105583A (https=)
CN (1) CN101965625B (https=)
WO (1) WO2009086983A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103400890A (zh) * 2013-07-08 2013-11-20 浙江晶科能源有限公司 一种晶硅太阳电池pecvd色差片去膜重镀的返工工艺
CN104766793B (zh) * 2014-01-03 2017-10-31 北大方正集团有限公司 一种酸槽背面硅腐蚀方法
CN106206247A (zh) * 2015-05-25 2016-12-07 宁波时代全芯科技有限公司 清洗半导体元件的方法
CN110061094A (zh) * 2019-03-14 2019-07-26 中山瑞科新能源有限公司 一种碲化镉薄膜电池表面清洗预处理工艺

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051134A (en) * 1990-01-26 1991-09-24 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe M.B.H. Process for the wet-chemical treatment of semiconductor surfaces
US5932022A (en) * 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
US6348157B1 (en) * 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
US6429144B1 (en) * 1999-12-28 2002-08-06 Koninklijke Philips Electronics N.V. Integrated circuit manufacture method with aqueous hydrogen fluoride and nitric acid oxide etch
CN1847382A (zh) * 2005-04-13 2006-10-18 美格纳半导体有限会社 用于清洗半导体器件的组合物及利用该组合物清洗半导体器件的方法
WO2007024515A1 (en) * 2005-08-23 2007-03-01 Asm America, Inc. Silicon surface preparation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818920B2 (ja) * 1990-01-12 1996-02-28 新日本製鐵株式会社 シリコンウェハの洗浄方法
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP4001662B2 (ja) * 1997-06-27 2007-10-31 株式会社半導体エネルギー研究所 シリコンの洗浄方法および多結晶シリコンの作製方法
US6346505B1 (en) * 1998-01-16 2002-02-12 Kurita Water Industries, Ltd. Cleaning solution for electromaterials and method for using same
KR20080103609A (ko) * 2001-05-30 2008-11-27 에이에스엠 아메리카, 인코포레이티드 저온 로딩 및 소성
JP4182818B2 (ja) * 2003-06-20 2008-11-19 株式会社Ｓｕｍｃｏ 半導体基板の製造方法
FR2864457B1 (fr) * 2003-12-31 2006-12-08 Commissariat Energie Atomique Procede de nettoyage par voie humide d'une surface notamment en un materiau de type silicium germanium.
KR100714311B1 (ko) * 2006-01-27 2007-05-02 삼성전자주식회사 실리콘 표면의 세정용액 및 이를 사용하는 반도체 소자의제조방법들
US20080169007A1 (en) * 2006-05-30 2008-07-17 Ismail Kashkoush Apparatus and method for processing a hydrophobic surface of a substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051134A (en) * 1990-01-26 1991-09-24 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe M.B.H. Process for the wet-chemical treatment of semiconductor surfaces
US6348157B1 (en) * 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
US5932022A (en) * 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
US6429144B1 (en) * 1999-12-28 2002-08-06 Koninklijke Philips Electronics N.V. Integrated circuit manufacture method with aqueous hydrogen fluoride and nitric acid oxide etch
CN1847382A (zh) * 2005-04-13 2006-10-18 美格纳半导体有限会社 用于清洗半导体器件的组合物及利用该组合物清洗半导体器件的方法
WO2007024515A1 (en) * 2005-08-23 2007-03-01 Asm America, Inc. Silicon surface preparation

Also Published As

Publication number Publication date
US8076219B2 (en) 2011-12-13
WO2009086983A9 (en) 2010-07-22
WO2009086983A1 (en) 2009-07-16
KR20100105583A (ko) 2010-09-29
EP2227821A1 (en) 2010-09-15
JP2011508981A (ja) 2011-03-17
EP2077576A1 (en) 2009-07-08
US20100255659A1 (en) 2010-10-07
CN101965625A (zh) 2011-02-02
JP5432180B2 (ja) 2014-03-05

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