KR20100009558A - 포토마스크 블랭크 및 포토마스크 - Google Patents

포토마스크 블랭크 및 포토마스크 Download PDF

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Publication number
KR20100009558A
KR20100009558A KR1020097022627A KR20097022627A KR20100009558A KR 20100009558 A KR20100009558 A KR 20100009558A KR 1020097022627 A KR1020097022627 A KR 1020097022627A KR 20097022627 A KR20097022627 A KR 20097022627A KR 20100009558 A KR20100009558 A KR 20100009558A
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KR
South Korea
Prior art keywords
film
transition metal
light shielding
silicon
shielding film
Prior art date
Application number
KR1020097022627A
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English (en)
Korean (ko)
Inventor
도시유키 스즈키
아츠시 고미나토
야스시 오쿠보
오사무 노자와
모리오 호소야
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20100009558A publication Critical patent/KR20100009558A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020097022627A 2007-04-27 2008-04-25 포토마스크 블랭크 및 포토마스크 KR20100009558A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007120318 2007-04-27
JPJP-P-2007-120318 2007-04-27

Publications (1)

Publication Number Publication Date
KR20100009558A true KR20100009558A (ko) 2010-01-27

Family

ID=40002120

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097022627A KR20100009558A (ko) 2007-04-27 2008-04-25 포토마스크 블랭크 및 포토마스크

Country Status (4)

Country Link
JP (1) JP5054766B2 (ja)
KR (1) KR20100009558A (ja)
TW (1) TW200905375A (ja)
WO (1) WO2008139904A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200128141A (ko) * 2018-03-15 2020-11-11 다이니폰 인사츠 가부시키가이샤 대형 포토마스크

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457696B (zh) 2008-03-31 2014-10-21 Hoya Corp 空白光罩、光罩及空白光罩之製造方法
WO2010113475A1 (ja) * 2009-03-31 2010-10-07 Hoya株式会社 マスクブランクおよび転写用マスク
US8709681B2 (en) 2009-04-16 2014-04-29 Hoya Corporation Mask blank, transfer mask, and film denseness evaluation method
JP5201361B2 (ja) * 2009-05-15 2013-06-05 信越化学工業株式会社 フォトマスクブランクの加工方法
JP5257256B2 (ja) * 2009-06-11 2013-08-07 信越化学工業株式会社 フォトマスクの製造方法
JP5714266B2 (ja) * 2009-08-25 2015-05-07 Hoya株式会社 マスクブランク、転写用マスクおよびこれらの製造方法
JP5606028B2 (ja) * 2009-09-11 2014-10-15 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスクの製造方法
JP4797114B2 (ja) * 2009-10-12 2011-10-19 Ｈｏｙａ株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP4739461B2 (ja) 2009-10-12 2011-08-03 Ｈｏｙａ株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP5682493B2 (ja) 2010-08-04 2015-03-11 信越化学工業株式会社 バイナリーフォトマスクブランク及びバイナリーフォトマスクの製造方法
NL2007287A (en) * 2010-09-14 2012-03-15 Asml Netherlands Bv Correction for flare effects in lithography system.
JP5596111B2 (ja) * 2012-12-05 2014-09-24 Ｈｏｙａ株式会社 半導体デバイスの製造方法
JP2015125628A (ja) * 2013-12-26 2015-07-06 大日本印刷株式会社 フィルムセンサ、タッチ位置検出機能付き表示装置、およびフィルムセンサを作製するための積層体
JP6420958B2 (ja) * 2014-03-04 2018-11-07 Hoya株式会社 インプリント用モールドブランクおよびインプリント用モールド
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP2017054105A (ja) 2015-09-11 2017-03-16 旭硝子株式会社 マスクブランク
JP6400763B2 (ja) * 2017-03-16 2018-10-03 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
JP6938428B2 (ja) 2018-05-30 2021-09-22 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
CN113311660B (zh) * 2021-06-03 2023-07-18 上海传芯半导体有限公司 掩模基版的制作方法及具有等离子体加热装置的涂胶设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095437A (ja) * 1983-10-28 1985-05-28 Hoya Corp フオトマスクブランク
JP3037763B2 (ja) * 1991-01-31 2000-05-08 ホーヤ株式会社 フォトマスクブランク及びその製造方法、並びにフォトマスク及びその製造方法
JP3032089B2 (ja) * 1992-09-24 2000-04-10 三菱電機株式会社 フォトマスク形成方法
JPH11125896A (ja) * 1997-08-19 1999-05-11 Toppan Printing Co Ltd フォトマスクブランクス及びフォトマスク
KR100424853B1 (ko) * 1998-07-31 2004-03-27 호야 가부시키가이샤 포토마스크 블랭크, 포토마스크, 이들의 제조방법 및미세패턴의 형성방법
JP2001100393A (ja) * 1999-09-28 2001-04-13 Toshiba Corp フォトマスク
JP3359620B2 (ja) * 2000-09-01 2002-12-24 株式会社半導体先端テクノロジーズ ホトマスクの製造方法
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200128141A (ko) * 2018-03-15 2020-11-11 다이니폰 인사츠 가부시키가이샤 대형 포토마스크

Also Published As

Publication number Publication date
WO2008139904A1 (ja) 2008-11-20
TW200905375A (en) 2009-02-01
JPWO2008139904A1 (ja) 2010-07-29
JP5054766B2 (ja) 2012-10-24

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