KR20080108408A - 반도체 봉지용 수지 조성물 및 반도체 장치 - Google Patents
반도체 봉지용 수지 조성물 및 반도체 장치 Download PDFInfo
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- KR20080108408A KR20080108408A KR1020087019054A KR20087019054A KR20080108408A KR 20080108408 A KR20080108408 A KR 20080108408A KR 1020087019054 A KR1020087019054 A KR 1020087019054A KR 20087019054 A KR20087019054 A KR 20087019054A KR 20080108408 A KR20080108408 A KR 20080108408A
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Abstract
Description
실시예 | ||||||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | ||
에폭시 수지 1 | 9.05 | 4.50 | 8.50 | 9.05 | 9.05 | 9.05 | ||||
에폭시 수지 2 | 8.65 | |||||||||
에폭시 수지 3 | 9.25 | |||||||||
에폭시 수지 4 | 8.35 | |||||||||
에폭시 수지 5 | 4.50 | |||||||||
페놀 수지 1 | 3.75 | 4.15 | 3.55 | 4.45 | 3.80 | 2.15 | 3.75 | 3.75 | 3.75 | |
페놀 수지 2 | 2.15 | |||||||||
용융 구상 실리카 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | |
경화촉진제 1 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | ||||
경화촉진제 2 | 0.2 | |||||||||
경화촉진제 3 | 0.2 | |||||||||
경화촉진제 4 | 0.2 | |||||||||
실란 커플링제 1 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | |
실란 커플링제 2 | ||||||||||
2,3-디히드록시 나프탈렌 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
카르나우바 왁스 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
카본블랙 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | |
스파이럴 플로우[cm] | 138 | 151 | 125 | 130 | 130 | 130 | 133 | 148 | 135 | |
흡습율 [중량%] | 0.18 | 0.19 | 0.17 | 0.19 | 0.17 | 0.17 | 0.18 | 0.18 | 0.18 | |
내연성 UL94 수직법 (3.2mm 두께) | Fmax | 5 | 6 | 4 | 5 | 5 | 4 | 5 | 5 | 5 |
∑F | 40 | 49 | 30 | 44 | 45 | 35 | 41 | 42 | 41 | |
랭크 | V-O | V-O | V-O | V-O | V-O | V-O | V-O | V-O | V-O | |
내용접성 (n/6) | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 |
실시예 | ||||||||||
10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | ||
에폭시 수지 1 | 9.05 | 9.05 | 9.05 | 9.19 | 9.05 | 9.25 | 8.70 | 10.50 | 6.20 | |
페놀 수지 1 | 3.75 | 3.75 | 3.75 | 3.80 | 3.75 | 3.84 | 3.60 | 4.30 | 2.60 | |
용융 구상 실리카 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 86.0 | 84.0 | 90.0 | |
경화촉진제 1 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
실란 커플링제 1 | 0.3 | 0.3 | 0.3 | 0.3 | 0.01 | 0.8 | 0.3 | 0.3 | ||
실란 커플링제 2 | 0.3 | |||||||||
2,3-디히드록시 나프탈렌 | 0.01 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | ||||
1,2-디히드록시 나프탈렌 | 0.2 | |||||||||
카테콜 | 0.2 | |||||||||
피로갈롤 | 0.2 | |||||||||
카르나우바 왁스 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
카본 블랙 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | |
스파이럴 플로우[cm] | 140 | 140 | 148 | 120 | 142 | 120 | 145 | 160 | 100 | |
흡습율 [중량%] | 0.18 | 0.18 | 0.18 | 0.16 | 0.18 | 0.18 | 0.19 | 0.21 | 0.16 | |
내연성 UL94 수직법 (3.2mm 두께) | Fmax | 5 | 5 | 5 | 6 | 5 | 5 | 5 | 6 | 4 |
∑F | 40 | 40 | 40 | 49 | 40 | 40 | 40 | 45 | 25 | |
랭크 | V-O | V-O | V-O | V-O | V-O | V-O | V-O | V-O | V-O | |
내용접성 (n/6) | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 | 0/6 |
비교예 | ||||||
1 | 2 | 3 | 4 | 5 | ||
에폭시 수지 1 | 14.71 | 0.40 | 9.23 | 9.22 | ||
에폭시 수지 6 | 8.40 | |||||
에폭시 수지 7 | 7.57 | |||||
페놀 수지 1 | 4.40 | 6.09 | 4.83 | 0.18 | ||
페놀 수지 3 | 3.57 | 3.40 | ||||
용융 구상 실리카 | 86.0 | 78.0 | 86.0 | 86.0 | 86.0 | |
경화촉진제 1 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
실란 커플링제 1 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | |
2,3-디히드록시 나프탈렌 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
카르나우바 왁스 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
카본 블랙 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | |
스파이럴 플로우[cm] | 114 | 220 | 100 | 110 | 127 | |
흡습율 [중량%] | 0.24 | 0.30 | 0.25 | 0.27 | 0.25 | |
내연성 UL94 수직법 (3.2mm 두께) | Fmax | 30 | 10 | 30 | 30 | 30 |
∑F | 150 | 60 | 150 | 150 | 150 | |
랭크 | 전소 | V-1 | 전소 | 전소 | 전소 | |
내용접성 (n/6) | 3/6 | 5/6 | 4/6 | 4/6 | 3/6 |
Claims (14)
- 에폭시 수지(A)와,페놀성 수산기를 2개 이상 포함하는 화합물(B)과,무기 충전제(C)와,경화촉진제(D)를 포함하는 반도체 봉지용 수지 조성물로서, 상기 에폭시 수지(A)가 하기 일반식 (1)로 표시되는 구조를 갖는 에폭시 수지(a1)를 포함하고 상기 반도체 봉지용 수지 조성물의 경화물을 85℃, 상대습도 85%의 환경하에서 168시간 가습 처리했을 때의 흡습율이 0.22 중량% 이하인 것을 특징으로 하는 반도체 봉지용 수지 조성물:(단, 상기 일반식 (1)에 있어서, Ar은 탄소수 6-20의 방향족기, R1은 탄소수 1-6의 탄화수소기이며, 서로 같아도 달라도 된다. R2은 탄소수 1-4의 탄화수소기이고, W1는 O 원자 또는 S 원자이다. R0은 탄소수 1-6의 탄화수소기이며, 서로 같아도 달라도 된다. a는 0-10, g는 0-3의 정수이다. m, n은 몰비를 나타내고, O<m<1, O<n<1이고, m+n=1, 또한 m/n은 1/10-1/1이다).
- 청구항 1 또는 청구항 2에 있어서,상기 일반식 (1)로 표시되는 구조를 갖는 에폭시 수지(a1)가 하기 일반식 (3)으로 표시되는 구조를 갖는 에폭시 수지인 것을 특징으로 하는 반도체 봉지용 수지 조성물:(단, 상기 일반식 (3)에 있어서, R1은 탄소수 1-6의 탄화수소기이며, 서로 같아도 달라도 된다. R2은 탄소수 1-4의 탄화수소기이고, W1는 O 원자 또는 S 원자이다. R0은 탄소수 1-6의 탄화수소기이며, 서로 같아도 달라도 된다. b는 0-5, g는 0-3의 정수이다. m, n은 몰비를 나타내고, O<m<1, O<n<1이고, m+n=1, 또한 m/n은 1/10-1/1이다).
- 청구항 1 내지 청구항 5 중 어느 한 항에 있어서,상기 경화촉진제(D)가 하기 일반식 (6)으로 표시되는 화합물, 하기 일반식 (7)로 표시되는 화합물, 하기 일반식 (8)로 표시되는 화합물 및 하기 일반식 (9)로 표시되는 화합물로부터 선택되는 적어도 1개인 것을 특징으로 하는 반도체 봉지용 수지 조성물:(단, 상기 일반식 (6)에 있어서, P는 인 원자를 나타낸다. R4, R5, R6 및 R7는 방향족기 또는 알킬기를 나타낸다. A는 히드록실기, 카르복실기, 티올기로부터 선택되는 관능기 중 어느 하나를 방향환에 적어도 1개 갖는 방향족 유기산의 음 이온을 나타낸다. AH는 히드록실기, 카르복실기, 티올기로부터 선택되는 관능기 중 어느 하나를 방향환에 적어도 1개 갖는 방향족 유기산을 나타낸다. x, y는 1-3의 정수, z는 0-3의 정수이며, 또한 x=y이다)(단, 상기 일반식 (7)에 있어서, X1은 탄소수 1-3의 알킬기, Y1는 히드록실기를 나타낸다. e, f는 0-3의 정수이다)(단, 상기 일반식 (8)에 있어서, P는 인 원자를 나타낸다. R8, R9 및 R10은 탄소수 1-12의 알킬기 또는 탄소수 6-12의 아릴기를 나타내고, 서로 같아도 달라도 된다. R11, R12 및 R13은 수소 원자 또는 탄소수 1-12의 탄화수소기를 나타내고, 서로 같아도 달라도 되고, R11와 R12가 결합하여 환상 구조가 되어도 된다)(단, 상기 일반식 (9)에 있어서, P는 인 원자를 나타내고, Si는 규소 원자를 나타낸다. R14, R15, R16 및 R17는 각각 방향환 또는 복소환을 갖는 유기기, 혹은 지방족기를 나타내고, 서로 같아도 달라도 된다. 식 중 X2는 Y2 및 Y3기와 결합하는 유기기이다. 식 중 X3는 Y4 및 Y5기와 결합하는 유기기이다. Y2 및 Y3는 프로톤 공여성기가 프로톤을 방출해서 이루어지는 기를 나타내고, 동일 분자 내의 Y2 및 Y3기가 규소 원자와 결합하여 킬레이트 구조를 형성하는 것이다. Y4 및 Y5는 프로톤 공여성기가 프로톤을 방출해서 이루어지는 기를 나타내고, 동일 분자 내의 Y4 및 Y5기가 규소 원자와 결합하여 킬레이트 구조를 형성하는 것이다. X2 및 X3는 서로 같아도 달라도 되고, Y2, Y3, Y4, 및 Y5는 서로 같아도 달라도 된다. Z1는 방향환 또는 복소환을 갖는 유기기, 혹은 지방족기이다).
- 청구항 1 내지 청구항 6 중 어느 한 항에 있어서,실란 커플링제(E)와 방향환을 구성하는 2개 이상의 인접하는 탄소 원자에 각각 수산기가 결합한 화합물(F)을 더 포함하는 것을 특징으로 하는 반도체 봉지용 수지 조성물.
- 청구항 7에 있어서,상기 화합물(F)은 방향환을 구성하는 2개의 인접하는 탄소 원자에 각각 수산기가 결합한 화합물인 것을 특징으로 하는 반도체 봉지용 수지 조성물.
- 청구항 7에 있어서,상기 화합물(F)은 나프탈렌환을 구성하는 2개 이상의 인접하는 탄소 원자에 각각 수산기가 결합한 화합물인 것을 특징으로 하는 반도체 봉지용 수지 조성물.
- 청구항 7에 있어서,상기 화합물(F)은 나프탈렌환을 구성하는 2개의 인접하는 탄소 원자에 각각 수산기가 결합한 화합물인 것을 특징으로 하는 반도체 봉지용 수지 조성물.
- 청구항 7 내지 청구항 10 중 어느 한 항에 있어서,상기 화합물(F)을 상기 수지 조성물 전체의 0.01 중량% 이상 1 중량% 이하로 포함하는 것을 특징으로 하는 반도체 봉지용 수지 조성물.
- 청구항 7 내지 청구항 11 중 어느 한 항에 있어서,상기 실란 커플링제(E)를 상기 수지 조성물 전체의 0.01 중량% 이상 1 중량% 이하로 포함하는 것을 특징으로 하는 반도체 봉지용 수지 조성물.
- 청구항 1 내지 청구항 12 중 어느 한 항에 있어서,상기 무기 충전제(C)를 상기 수지 조성물 전체의 80 중량% 이상 92 중량% 이하로 포함하는 것을 특징으로 하는 반도체 봉지용 수지 조성물.
- 청구항 1 내지 청구항 13 중 어느 한 항 기재의 반도체 봉지용 수지 조성물의 경화물에 의해 반도체 소자를 봉지하여 이루어지는 것을 특징으로 하는 반도체 장치.
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KR101464700B1 (ko) * | 2013-03-19 | 2014-11-27 | 주식회사 유니플러스 | 반도체용 에폭시 수지조성물 |
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Cited By (5)
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KR101252063B1 (ko) * | 2011-08-25 | 2013-04-12 | 한국생산기술연구원 | 알콕시실릴기를 갖는 에폭시 화합물, 이의 제조 방법, 이를 포함하는 조성물과 경화물 및 이의 용도 |
US9150686B2 (en) | 2011-08-25 | 2015-10-06 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxysilyl group, method of preparing the same, composition and cured product comprising the same, and uses thereof |
US9896535B2 (en) | 2011-08-25 | 2018-02-20 | Korea Institute Of Industrial Technology | Epoxy compound having alkoxysilyl group, method of preparing the same, composition and cured product comprising the same, and uses thereof |
KR101464700B1 (ko) * | 2013-03-19 | 2014-11-27 | 주식회사 유니플러스 | 반도체용 에폭시 수지조성물 |
US11840601B2 (en) | 2019-11-15 | 2023-12-12 | Korea Institute Of Industrial Technology | Composition of alkoxysilyl-functionalized epoxy resin and composite thereof |
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US20070232728A1 (en) | 2007-10-04 |
MY145942A (en) | 2012-05-31 |
CN101379107A (zh) | 2009-03-04 |
KR101016067B1 (ko) | 2011-02-17 |
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WO2007125635A1 (ja) | 2007-11-08 |
JP5321057B2 (ja) | 2013-10-23 |
US7696286B2 (en) | 2010-04-13 |
TW200801110A (en) | 2008-01-01 |
TWI482815B (zh) | 2015-05-01 |
CN101379107B (zh) | 2011-02-09 |
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