TWI482815B - 半導體密封用樹脂組成物及半導體裝置 - Google Patents
半導體密封用樹脂組成物及半導體裝置 Download PDFInfo
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- TWI482815B TWI482815B TW096111256A TW96111256A TWI482815B TW I482815 B TWI482815 B TW I482815B TW 096111256 A TW096111256 A TW 096111256A TW 96111256 A TW96111256 A TW 96111256A TW I482815 B TWI482815 B TW I482815B
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- epoxy resin
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- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical compound [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 1
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- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
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- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
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- C08G59/245—Di-epoxy compounds carbocyclic aromatic
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3218—Carbocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
- C08L61/12—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols with polyhydric phenols
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
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- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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Description
本發明係關於半導體密封用樹脂組成物及半導體裝置。
近年來,伴隨著集成電路(IC)、大規模集成電路(LSI)、超大規模集成電路(VLSI)等之電子零件和半導體裝置的高密度化、高集成化,其等之安裝方式正由插入安裝轉移為表面安裝。隨此,將要求引線框架之多接腳(pin)化及引線之狹間距化,並將可對應於小型、輕量且多接腳之表面安裝型之QFP(Quad Flat Package,四面扁平封裝)等使用於各種半導體裝置。而且,該半導體裝置係由於生產性、成本、可靠性等之均衡優越,故使用環氧樹脂組成物進行密封已成為主流。
對於此等半導體密封用環氧樹脂組成物係要求難燃性,因此除了主成分之外,亦另外組合調配四溴雙酚A型環氧樹脂和溴化酚酚醛清漆型環氧樹脂等之溴化環氧樹脂與氧化銻,以作為難燃性賦予成分。
然而,近年來由環境保護之觀點而言,對於具有發生戴奧辛類似化合物之危險的含鹵素化合物和毒性高之銻化合物之使用的規範趨勢高漲。因此,關於半導體密封用組成物,研討了不使用以上述溴化環氧樹脂為首之鹵素化合物和氧化銻以達成難燃性的技術。另外,已知若將半導體裝置於150~200℃之高溫下長時間保管,屬於難燃劑之溴原子和銻化合物將引起半導體元件之電阻值增加和金屬線之斷線。由此觀點而言,亦要求開發出不使用溴系難燃劑和銻化合物、高溫保管特性優越之半導體密封用環氧樹脂組成物。如此,雖使用氫氧化鋁和氫氧化鎂等之金屬氧化物之難燃劑取代溴系難燃劑和銻化合物,但將有熔融樹脂黏度增加和耐焊性降低的問題。
由上述狀況,作為即使不添加難燃性賦予劑仍可得到良好難燃性之半導體環氧樹脂組成物,提案有使用具聯苯基芳烷基骨架之環氧樹脂的環氧樹脂組成物(例如,參照專利文獻1、2)。此等環氧樹脂組成物雖為低吸水性、熱時低彈性係數、高接黏性,可得到難燃性優越、可靠性高之半導體裝置,但於此等樹脂之製造方面,將有耗費成本的困難。
專利文獻1:日本專利特開2004-203911號公報專利文獻2:日本專利特開2004-155841號公報
本發明係有鑑於上述情事而成者,其目的在於提供未使用溴系難燃劑、銻化合物,低成本且耐燃性優越,加濕處理後之耐焊性亦良好之半導體密封用環氧樹脂組成物,以及藉其硬化物將半導體元件進行密封而成之半導體裝置。
本發明係:[1]一種半導體密封用樹脂組成物,係含有環氧樹脂(A)、含2個以上酚性羥基之化合物(B)、無機填充劑(C)與硬化促進劑(D)者,其特徵為,上述環氧樹脂(A)係含有具下述一般式(1)所示構造之環氧樹脂(a1),將上述半導體密封用樹脂組成物之硬化物於85℃、相對濕度85%之環境下加濕處理168小時時之吸濕率為0.22重量%以下;
(其中,上述一般式(1)中,Ar為碳數6~20之芳香族基,R1為碳數1~6之烴基,互相可為相同或相異。R2為碳數1~4之烴基,W1為O原子或S原子。R0為碳數1~6之烴基,互相可為相同或相異。a為0~10之整數,g為0~3之整數。m、n表示莫耳比,0<m<1,0<n<1,m+n=1,且m/n為1/10~1/1。)[2]如上述第[1]項之半導體密封用樹脂組成物,其中,上述具一般式(1)所示構造之環氧樹脂(a1),係將使酚類、醛類、以下述一般式(2)所示化合物(G)進行共縮合所得之酚樹脂類,以表氯醇進行環氧丙基醚化之環氧樹脂;(化2)(R1)a
-Ar-W1R2 (2)(其中,上述一般式(2)中,Ar為碳數6~20之芳香族基,R1為碳數1~6之烴基,互相可為相同或相異。R2為碳數1~4之烴基,W1為O原子或S原子。a為0~10之整數。)[3]如上述第[1]或[2]項之半導體密封用樹脂組成物,其中,上述具一般式(1)所示構造之環氧樹脂(a1),係具有下述一般式(3)所示構造之環氧樹脂;
(其中,上述一般式(3)中,R1為碳數1~6之烴基,互相可為相同或相異。R2為碳數1~4之烴基,W1為0原子或S原子。R0為碳數1~6之烴基,互相可為相同或相異。b為0~5之整數,g為0~3之整數。m、n表示莫耳比,0<m<1,0<n<1,m+n=1,且m/n為1/10~1/1。)[4]如上述第[3]項之半導體密封用樹脂組成物,其中,上述具有一般式(3)所示構造之環氧樹脂,係具有下述一般式(4)所示構造之環氧樹脂;
(其中,上述一般式(4)中,R1為碳數1~6之烴基,互相可為相同或相異。R0為碳數1~6之烴基,互相可為相同或相異。b為0~5之整數,g為0~3之整數。m、n表示莫耳比,0<m<1,0<n<1,m+n=1,且m/n為1/10~1/1。)[5]如上述[1]至[4]項之半導體密封用樹脂組成物,其中,上述含2個以上酚性羥基之化合物(B)係下述一般式(5)所示之化合物;
(其中,上述一般式(5)中,R3為碳數1~4之烴基,互相可為相同或相異。d為0~2之整數。k之平均值為0或8以下。)[6]如上述[1]至[5]項之半導體密封用樹脂組成物,其中,上述硬化促進劑(D)係選自下述一般式(6)所示化合物、下述一般式(7)所示化合物、下述一般式(8)所示化合物及下述一般式(9)所示化合物之至少一者;
(其中,上述一般式(6)中,P表示磷原子。R4、R5、R6及R7表示芳香族基或烷基。A表示於芳香環上具有至少一個自羥基、羧基、硫醇基選擇之任一官能基的芳香族有機酸的陰離子。AH表示於芳香環上具有至少一個自羥基、羧基、硫醇基選擇之任一官能基的芳香族有機酸。x、y為1~3之整數,z為0~3之整數,且x=y。)
(其中,上述一般式(7)中,X1表示碳數1~3之烷基,Y1表示羥基。e、f為0~3之整數。)
(其中,上述一般式(8)中,P表示磷原子。R8、R9及R10表示碳數1~12之烷基或碳數6~12之芳基,互相可為相同或相異。R11、R12及R13表示氫原子或碳數1~12之烴基,互相可為相同或相異,亦可R11與R12鍵結成為環狀構造。)
(其中,上述一般式(9)中,P表示磷原子,Si表示矽原子。R14、R15、R16及R17分別表示具有芳香環或雜環之有機基、或脂肪族基,互相可為相同或相異。式中X2為與基Y2及Y3鍵結之有機基。式中X3為與基Y4及Y5鍵結之有機基。Y2及Y3表示質子供予性基釋出質子而成之基,同一分子內之基Y2及Y3為與矽原子鍵結形成螯合物構造者。Y4及Y5表示質子供予性基釋出質子而成之基,同一分子內之基Y4及Y5為與矽原子鍵結形成螯合物構造者。X2及X3互相可為相同或相異,Y2、Y3、Y4及Y5互相可為相同或相異。Z1為具有芳香環或雜環之有機基、或脂肪族基。)[7]如上述[1]至[6]項之半導體密封用樹脂組成物,其中,進一步含有矽烷偶合劑(E)、與於構成芳香環之2個以上相鄰接之碳原子上分別鍵結有羥基之化合物(F);[8]如上述[7]項之半導體密封用樹脂組成物,其中,上述化合物(F)係於構成芳香環之2個相鄰接之碳原子上分別鍵結有羥基之化合物;[9]如上述[7]項之半導體密封用樹脂組成物,其中,上述化合物(F)係於構成萘環之2個以上相鄰接之碳原子上分別鍵結有羥基之化合物;[10]如上述[7]項之半導體密封用樹脂組成物,其中,上述化合物(F)係於構成萘環之2個相鄰接之碳原子上分別鍵結有羥基之化合物;[11]如上述[7]至[10]項之半導體密封用樹脂組成物,其中,含有該樹脂組成物整體之0.01重量%以上、1重量%以下之上述化合物(F);[12]如上述[7]至[11]項之半導體密封用樹脂組成物,其中,含有該樹脂組成物整體之0.01重量%以上、1重量%以下之上述矽烷偶合劑(E);[13]如上述[1]至[12]項之半導體密封用樹脂組成物,其中,含有該樹脂組成物整體之80重量%以上、92重量%以下之上述無機填充劑(C);[14]一種半導體裝置,其特徵為,係藉由上述[1]至[13]項中任一項之半導體密封用樹脂組成物之硬化物對半導體元件進行密封而成。
若依照本發明,則可未使用溴系難燃劑、銻化合物,而得到低成本且耐燃性優越,加濕處理後之耐焊性亦良好之半導體密封用環氧樹脂組成物及半導體裝置。
若依照本發明,由於可得到低成本且耐燃性、加濕處理後之耐焊性均優越之環氧樹脂組成物,故適合作為表面安裝型半導體裝置。
上述目的及其他目的、特徵及優點,將藉由以下所述之較佳實施形態、及所隨附之以下圖式進一步予以闡明。
本發明係含有環氧樹脂(A)、含2個以上酚性羥基之化合物(B)、無機填充劑(C)與硬化促進劑(D)之半導體密封用樹脂組成物,上述環氧樹脂(A)係含有具下述一般式(1)所示構造之環氧樹脂(a1),將上述半導體密封用樹脂組成物之硬化物於85℃、相對濕度85%之環境下加濕處理168小時時之吸濕率為0.22重量%以下,藉此可得到低成本且耐燃性優越、加濕處理後之耐焊性亦良好之環氧樹脂組成物。
以下,針對各成分進行詳細說明。
本發明中,作為環氧樹脂(A)係使用具下述一般式(1)所示構造之環氧樹脂(a1)。該環氧樹脂(a1)係分子內芳香族環碳較多,使用其之環氧樹脂組成物之硬化物將具有耐燃性優越、吸水率低的特徵。又,作為具下述一般式(1)所示構造之環氧樹脂(a1)中之m與n之比例m/n,較佳為1/10~1/1,更佳為1/9~1/2。若m/n為上述範圍內,則可得到耐燃性提升效果。又,若為上述範圍內,則因樹脂黏度變高而引起樹脂組成物流動性降低的顧慮較少。
本發明所使用之具一般式(1)所示構造之環氧樹脂(a1),並無特別限定,可舉例如具有下述一般式(4)所示構造之環氧樹脂、具有下述一般式(10)所示構造之環氧樹脂、具有下述一般式(11)所示構造之環氧樹脂、具有下述一般式(12)所示構造之環氧樹脂。由耐燃性之觀點而言,更佳為一般式(1)中之Ar為萘環之具有下述一般式(4)所示構造之環氧樹脂、具有下述一般式(11)所示構造之環氧樹脂。
本發明所使用之具一般式(1)所示構造之環氧樹脂(a1),可藉由將使酚類、醛類、以下述一般式(2)所示化合物(G)進行共縮合所得之酚樹脂類,以表氯醇進行環氧丙基醚化而獲得。下述一般式(2)所示化合物(G),係具有於芳香族環鍵結著W1R2(W1為O原子或S原子,R2為碳數1~4之羥基)之特徵。藉由鍵結著W1R2,則下述一般式(2)所示化合物(G)將具有極性,藉此使反應性提升,故可將該化合物(G)之構造導入至由酚類、醛類所形成之酚醛清漆樹脂的構造中。該環氧樹脂(a1)係具有同樣地耐燃性優越,原料成本較低吸水性之具聯伸苯基骨架之酚芳烷基型環氧樹脂更低,原料亦容易取得的優點,故可依低成本予以製造或取得。
(化2)(R1)a
-Ar-W1R2 (2)(其中,上述一般式(2)中,Ar為碳數6~20之芳香族基,R1為碳數1~6之烴基,互相可為相同或相異。R2為碳數1~4之烴基,W1為O原子或S原子。a為0~10之整數。)
作為製造環氧樹脂(a1)所使用之酚類,並無特別限定,可舉例如:酚、鄰甲酚、對甲酚、間甲酚、丁基苯、二甲酚、壬基苯、1-萘酚、2-萘酚等通常之酚系樹脂合成所使用之酚系化合物,此等可單獨使用1種,或並用2種以上。
作為製造環氧樹脂(a1)所使用之醛類,並無特別限定,可舉例如甲醛、乙醛、苯醛、水楊醛等之酚系樹脂合成所使用之醛類,此等可單獨使用1種,或並用2種以上。
作為製造環氧樹脂(a1)所使用之一般式(2)所示的化合物(G),若為一般式(2)之構造則無特別限定,可舉例如甲氧基苯、乙氧基苯、甲基苯基硫醚、乙基苯基硫醚、甲氧基萘、乙氧基萘、甲氧萘基硫醚、乙基萘基硫醚等。此等之中,若考慮耐燃性、低吸水性等,則以下式(13)所示化合物為較佳,更佳為下式(14)所示之甲氧基萘化合物。
關於本發明所使用之環氧樹脂(a1)之前驅體的酚樹脂類的合成方法,並無特別限定,可舉例如,使酚類與醛類與一般式(2)所示化合物(G)在共存下使用酸性觸媒予以共縮合的方法。
本發明所使用之環氧樹脂(a1)的合成方法並無特別限定,可舉例如,將屬於環氧樹脂(a1)之前驅體的酚樹脂類溶解於過剩之表氯醇中後,於氫氧化鈉、氫氧化鉀等之鹼金屬氫氧化物的存在下,在50~150℃、較佳60~120℃下進行反應1~10小時的方法等。反應結束後,餾除過剩的表氯醇,將殘留物溶解於甲苯、甲基異丁基酮等之溶劑中,予以過濾、水洗去除無機鹽,其次餾除溶劑,藉由可得到目標之環氧樹脂(a1)。
本發明中,在不損及藉由使用具有一般式(1)所示構造之環氧樹脂(a1)所造成之效果的範圍內,可並用其他環氧樹脂。作為可並用之環氧樹脂,可舉例如:聯苯基型環氧樹脂、雙酚型環氧樹脂、1,2-二苯乙烯基環氧樹脂、酚-酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、三苯基甲烷基環氧樹脂、具伸苯基骨架之酚芳烷基型環氧樹脂、具聯伸苯基骨架之酚芳烷基型環氧樹脂、萘型環氧樹脂、烷基改質三苯基甲烷基環氧樹脂、含三井核之環氧樹脂、二環戊二烯改質苯基基環氧樹脂等。若考慮作為半導體密封用環氧樹脂組成物之耐濕可靠性,較佳為屬於離子性雜質之Na離子和Cl離子極少者,由硬化性之觀點而言,較佳係環氧當量為100g/eq以上、500g/eq以下。
作為並用其他環氧樹脂時之環氧樹脂(a1)的調配比例,係相對於總環氧樹脂,較佳為10重量%以上,更佳30重量%以上,特佳50重量%以上。若調配比例為上述範圍內,則可得到耐燃性提升效果。
本發明中,由耐燃性、耐濕性、電氣特性、硬化性、保存穩定性等之觀點而言,係使用含2個以上酚性羥基之化合物(B)作為硬化劑。此含2個以上酚性羥基之化合物(B)係一分子內具有二個以上酚性羥基之單體、寡聚物、聚合物整體,其分子量、分子構造並無特別限定,可舉例如:酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、三苯基甲烷型酚樹脂、萜改質酚樹脂、二環戊二烯改質酚樹脂、具有伸苯基骨架及/或聯伸苯基骨架之酚芳烷基樹脂、具有伸苯基及/或聯伸苯基骨架之萘酚芳烷基樹脂、雙酚化合物等,此等可單獨使用1種,亦可並用2種以上。此等之中,由硬化性之觀點而言,較佳係羥基當量為90g/eq以上、250g/eq以下者。
另外,於含2個以上酚性羥基之化合物(B)內,較佳為下述一般式(5)所示化合物。下述一般式(5)所示化合物係具有多數個酚樹羥基,故使用其之環氧樹脂組成物的反應性高,成形性優越,可使生產性提升,且為非常低成本。又,其硬化物係交聯密度、Tg變高。作為下述一般式(5)所示之酚樹脂,可舉例如酚酚醛清漆樹脂和甲酚酚醛清漆樹脂等,但若為下述一般式(5)之構造則無特別限定。
本發明中,作為一般式(5)所示化合物之調配比例,並無特別限制,係相對於含2個以上酚性羥基之化合物(B)的總量,較佳為10重量%以上,更佳30重量%以上,特佳50重量%以上。若一般式(5)所示化合物之調配比例為上述範圍內,則可得到良好之反應性、生產性。
作為本發明所使用之無機填充劑(C),可使用用於一般半導體密封用樹脂組成物中者,可舉例如:熔融二氧化矽、球狀二氧化矽、結晶二氧化矽、氧化鋁、氮化矽、氮化鋁等。若考慮對鑄模之填充性,則無機填充劑(C)之粒徑最好為0.01 μm以上、150 μm以下。又,無機填充劑(C)之含量較佳為環氧樹脂組成物整體之80重量%以上、92重量%以下,更佳為82重量%以上、91重量%以下,特佳為84重量%以上、90重量%以下。若無機填充劑(C)之含量為上述範圍內,則環氧樹脂組成物之硬化物之因吸濕量增加、強度降低而引起耐焊裂性降低的顧慮較少。又,若無機填充劑(C)之含量為上述範圍內,則因損及流動性而引起成形面處之不良情形的顧慮較少。
本發明所使用之硬化促進劑(D),若為促進環氧樹脂之環氧基與含2個以上酚性羥基之化合物之酚性羥基的反應者即可,可利用使用於一般半導體密封用環氧樹脂組成物者。其具體例有如:有機膦、四取代鏻化合物、磷甜菜鹼(phosphobetaine)化合物、膦化合物與醌化合物之加成物等的含磷原子化合物;1,8-二氮雜雙環(5,4,0)十一烯-7、苄基二甲基胺、2-甲基咪唑等之含氮原子化合物。此等之中,較佳為含磷原子化合物,尤其是考慮流動性時,特佳為四取代鏻化合物。另外,若考慮環氧樹脂組成物之硬化物熱時低彈性率,則較佳為磷甜菜鹼化合物、膦化合物與醌化合物之加成物,又,若考慮潛伏性的硬化性,較佳為鏻化合物與矽烷化合物之加成物。
作為本發明可利用之有機膦,可舉例如乙基膦、苯基膦等之一級膦;二甲基膦、二苯基膦等之二級膦;三甲基膦、三乙基膦、三丁基膦、三苯基膦等之三級膦。
作為本發明可利用之二取代鏻化合物,可舉例如下述一般式(6)所示化合物。
一般式(6)所示化合物係例如如下述般予以獲得,但並不限定於此。首先,將四取代鹵化鏻與芳香族有機酸與鹹均勻混合於有機溶劑中,於該溶液系內使芳香族有機酸陰離子產生。其次,加入水時,可使一般式(6)所示化合物沉澱。一般式(6)所示化合物中,鍵結於磷原子之R4、R5、R6及R7為苯基,且AH為於芳香環上具有羥基之化合物、亦即酚類,且A較佳係該酚類之陰離子。
作為本發明可利用之磷甜菜鹼化合物,可舉例如下述一般式(7)所示化合物等。
一般式(7)所示化合物例如可依下述般獲得。首先,使屬於三級膦之三芳香族取代膦與重氮鹽接觸,經由使三芳香族取代膦與重氮鹽所具有之重氮基進行取代的步驟,即可獲得。但並不限定於此。
作為本發明可利用之膦化合物與醌化合物之加成物,可舉例如下述一般式(8)所示化合物。
作為使用於膦化合物與醌化合物之加成物中的膦化合物,較佳為三苯基膦、參(烷基苯基)膦、參(烷氧基苯基)膦、三萘基膦、參(苄基)膦等之於芳香環上無取代或存在烷基、烷氧基等之取代基者,烷基、烷氧基之有機基可舉例如具有1~6碳數者。由取得容易度的觀點而言,較佳為三苯基膦。
作為使用於膦化合物與醌化合物之加成物中的醌化合物,可舉例如鄰苯醌、對苯醌、蒽醌類,其中,由保存穩定性方面而言,較佳為對苯醌。
作為膦化合物與醌化合物之加成物的製造方法,可藉由使有機三級膦與苯醌類於可溶解其兩者之溶媒中進行接觸、混合,以得到加成物。作為溶媒,可為丙酮和甲基乙基酮等之酮類,並對加成物之溶解性低者。但並不限定於此。
一般式(8)所示化合物中,鍵結於磷原子之R8、R9及R10為苯基,且R11、R12及R13為氫之化合物,亦即,使1,4-苯醌與三苯基膦進行加成之化合物,係使環氧樹脂組成物之硬化物熱時彈性率降低,故較佳。
作為本發明可利用之鏻化合物與矽烷化合物之加成物,可舉例如下述一般式(9)所示化合物。
一般式(9)中,R14、R15、R16及R17可舉例如苯基、甲基苯基、甲氧基苯基、羥基苯基、萘基、羥基萘基、苄基、甲基、乙基、正丁基、正辛基及環己基等之具有取代基的芳香族基或無取代之芳香族基,此等之中,較佳為苯基、甲基苯基、甲氧基苯基、羥基苯基、羥基萘基等。
另外,一般式(9)中,X2係與Y2、Y3鍵結之有機基。同樣地,X3係與基Y4及Y5鍵結之有機基。Y2及Y3為質子供予性基釋出質子而成之基,同一分子內之基Y2及Y3為與矽原子鍵結形成螯合物構造者。同樣地,Y4及Y5為質子供予性基釋出質子而成之基,同一分子內之基Y4及Y5為與矽原子鍵結形成螯合物構造者。基Y2及Y3互相可為相同或相異,Y2、Y3、Y4及Y5互相可為相同或相異。此種一般式(9)中之-Y2-X2-Y3-、及-Y4-X3-Y5-所示之基,係2價以上之質子供予體釋出二個質子而成之基所構成者。作為2價以上之質子供予體,可舉例如:鄰苯二酚、五倍子酚、1,2-二羥基萘、2,3-二羥基萘、2,2,-聯苯、1,1’-聯-2-萘酚、水楊酸、1-羥基-2-萘甲酸、3-羥基-2-萘甲酸、氯冉酸、單寧酸、2-羥基苄基醇、1,2-環己二醇、1,2-丙二醇及甘油等,此等之中,更佳為鄰苯二酚、1,2-二羥基萘、2,3-二羥基萘。
另外,一般式(9)中之Z1,表示具有芳香環或雜環之有機基或脂肪族基,作為此等之具體例,有如:甲基、乙基、丙基、丁基、己基及辛基等之脂肪族羥基;和苯基、苄基、萘基及聯苯基等之芳香族羥基;環氧丙基氧基丙基、巰基丙基、胺基丙基及乙烯基等之反應性取代基等。此等之中,由熱穩定性之方面而言,更佳為甲基、乙基、苯基、萘基及聯苯基。
作為鏻化合物與矽烷化合物之加成物的製造方法,係於裝入了甲醇之燒瓶中,加入苯基三甲氧基矽烷等之矽烷化合物、2,3-二羥基萘等之2價以上之質子供予體並使之溶解,其次,於室溫攪拌下滴入甲醇鈉-甲醇溶液。再將事先準備之使四苯基溴化鏻等之四取代鹵化鏻溶解於甲醇之溶液,於室溫攪拌下滴入,而使結晶析出。將析出之結晶予以過濾、水洗、真空乾燥,則得到鏻化合物與矽烷化合物之加成物。然而,並不限定於此。
本發明所使用之硬化促進劑(D)的調配量,較佳為總環氧樹脂組成物中之0.1重量%以上、1重量%以下。若硬化促進劑(D)之調配量為上述範圍內,則引起硬化性降低的顧慮較少。又,若硬化促進劑(D)之調配量為上述範圍內,則引起流動性降低的顧慮較少。
本發明中可使用之矽烷偶合劑(E),並不限定於環氧矽烷、胺基矽烷、脲矽烷、巰基矽烷等,若為於環氧樹脂與無機填充劑之間進行反應,使環氧樹脂與無機填充劑之界面強度提升者即可。又,後述之於構成芳香環之2個以上相鄰接之碳原子上分別鍵結有羥基之化合物(F)(以下亦稱為化合物(F)),係藉由與該矽烷偶合劑(E)之相乘效果,而具有使環氧樹脂組成物之黏度降低、流動性提升的效果,故矽烷偶合劑(E)可有效用於充分得到化合物(F)之效果。
作為環氧矽烷,可舉例如:γ-環氧丙氧基丙基三乙氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二甲氧基矽烷、β-(3,4環氧基環己基)乙基三甲氧基矽烷等。又,作為胺基矽烷可舉例如:γ-胺基丙基三乙氧基矽烷、γ-胺基丙基三甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基三甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基甲基二甲氧基矽烷、N-苯基γ-胺基丙基三乙氧基矽烷、N-苯基γ-胺基丙基三甲氧基矽烷、N-β(胺基乙基)γ-胺基丙基三乙氧基矽烷、N-6-(胺基己基)3-胺基丙基三甲氧基矽烷、N-(3-(三甲氧基矽烷基丙基)-1,3-苯二甲胺等。又,作為脲矽烷,可舉例如γ-脲丙基三乙氧基矽烷、六甲基二矽氮烷等。又,作為巰基矽烷,可舉例如γ-巰基丙基三甲氧基矽烷等。此等之矽烷偶合劑(E)可單獨使用1種,亦可並用2種以上。
本發明可使用之矽烷偶合劑(E)的調配量,較佳為總環氧樹脂組成物中之0.01重量%以上、1重量%以下,更佳為0.05重量%以上、0.8重量%以下,特佳為0.1重量%以上、0.6重量%以下。若矽烷偶合劑(E)之調配量為上述範圍內,則藉由與化合物(F)之相乘效果,可得到環氧樹脂組成物之充分低黏度化與流動性提升效果。又,若矽烷偶合劑(E)之調配量為上述範圍內,則因環氧樹脂與無機填充劑之界面強度降低而引起半導體裝置之耐焊裂性降低的顧慮較少。又,若矽烷偶合劑(E)之調配量為上述範圍內,則環氧樹脂組成物之硬化物之因水性增加而引起耐焊裂性降低的顧慮較少。
本發明可使用之於構成芳香環之2個以上相鄰接之碳原子上分別鍵結有羥基之化合物(F)(以下亦稱為化合物(F)),係具有使環氧樹脂組成物之熔融黏度降低、提升流動性的效果。作為化合物(F),可使用下述一般式(15)所示之單環式化合物或下述一般式(16)所示之多環式化合物等,此等化合物亦可使用羥基以外之取代基。
作為一般式(15)所示之單環式化合物的具體例,可舉例如:鄰苯二酚、五倍子酚、沒食子酸、沒食子酸酯或此等之衍生物。又,一般式(16)所示之多環式化合物的具體例,可舉例如:1,2-二羥基萘、2,3-二羥基萘及此等之衍生物。由流動性與硬化性之控制容易度而言,此等之中較佳為於構成芳香環之2個相鄰接之碳原子上分別鍵結有羥基之化合物。又,考慮到混練步驟時之揮發的情況下,更佳係母核為低揮發性且秤量穩定性高之萘環的化合物。此情況下,具體而言,可使用例如1,2-二羥基萘、2,3-二羥氧萘及其衍生物等之具有萘環的化合物作為化合物(F)。此等化合物(F)可單獨使用1種,亦可並用2種以上。
此種化合物(F)的調配量,較佳為總環氧樹脂組成物中之0.01重量%以上、1重量%以下,更佳為0.03重量%以上、0.8重量%以下,特佳為0.05重量%以上、0.5重量%以下。若化合物(F)之調配量為上述範圍內,則藉由與矽烷偶合劑(E)之相乘效果,可得到環氧樹脂組成物之充分低黏度化與流動性提升效果。又,若化合物(F)之調配量為上述範圍內,則引起環氧樹脂組成物之硬化性降低和硬化物物性降低的顧慮較少。
本發明之半導體密封用樹脂組成物係以(A)~(F)作為主成分,此外進一步視需要,亦可適當配合:棕櫚蠟等之天然蠟;聚乙烯蠟等之合成蠟;硬脂酸和硬脂酸鋅等之高級脂肪及其金屬鹽類或烯烴等之離型劑;碳黑、鐵丹等之著色劑;聚矽氧油、聚矽氧橡膠等之低應力添加劑;氧化鉍水合物等之無機離子交換體;氫氧化鋁、氫氧化鎂等之金屬氫氧化物;硼酸鋅、鉬酸鋅、磷氮基化合物(phosphazene)等之難燃劑;等。
本發明之半導體密封用樹脂組成物,較佳係將其之硬化物於85℃、相對濕度85%之環境下進行加濕處理168小時時之吸濕率為0.22重量%以下。若為上述範圍內,則可抑制因表面安裝時之焊錫處理步驟中之吸濕水分氣化所引起之應力,故可抑制半導體裝置內、尤其是半導體元件、引線框架、內引線等與環氧樹脂組成物硬化物之界面處的剝離,結果可得到可靠性高之半導體裝置。使將樹脂組成物之硬化物於85℃、相對濕度85%之環境下進行加濕處理168小時時之吸濕率成為0.22重量%以下時,可藉由調製環氧樹脂(A)、含2個以上酚性羥基之化合物(B)、無機填充劑(C)、硬化促進劑(D)、矽烷偶合劑(E)、於構成芳香環之2個以上相鄰接之碳原子上分別鍵結有羥基之化合物(F)及使用作為其他添加劑之成分的組合與調配比例而獲得。於實施例將更具體表示,但環氧樹脂(A)、含2個以上酚性羥基之化合物(B)之選定、與無機填充劑(C)之調配比例係特別重要。又,對於將其之硬化物於85℃、相對濕度85%之環境下進行加濕處理168小時時之吸濕率的下限值並無特別限定,但若考慮與流動性的均衡,則較佳為0.10重量%以上,更佳為0.15重量%以上。
本發明之半導體密封用環氧樹脂組成物,可使用下述者:將(A)~(F)成分及其他添加劑使用例如混合機等於常溫下予以均勻混合者,進一步於其後使用加熱輥、捏合機或擠出機等之混練機進行熔融混練,接著進行冷卻、粉碎者等。樹脂組成物可使用視需要而調製適當分散度和流動性等者。
藉由本發明之半導體密封用環氧樹脂組成物之硬化物將半導體元件進行密封而製造半導體裝置時,係可例如將搭載了半導體元件之引線框架等設置於鑄模穴內後,將半導體密封用環氧樹脂組成物以轉移模製、壓縮模製、射出模製等之成形方法進行成形硬化。
作為本發明中進行密封的半導體元件,並無特別限定,可舉例如集成電路、大規模集成電路、電晶體、閘流體、二極體、固體攝影元件等。
作為本發明之半導體裝置的封裝形態,並無特別限定,可舉例如:雙排型封裝(DIP)、塑料引線晶粒承載封裝(PLCC)、四面扁平封裝(QFP)、小外型封裝(SOP)、小外型J引線封裝(SOJ)、薄型小外型封裝(TSOP)、薄型四邊平坦封裝(TQFP)、捲帶式封裝(TCP)、閘球陣列(BGA)、晶片尺寸封裝(CSP)等
依轉移模製等成形方法所密封之本發明之半導體裝置,係直接、或於80℃至200℃左右的溫度下,歷時10分鐘至10小時左右的時間使其完全硬化後,搭載於電子機器等上。
圖1為針對使用本發明之環氧樹脂組成物之半導體裝置的一例,表示其剖面構造的圖。於晶粒座3上,透過黏晶材硬化體2固定半導體元件1。半導體元件1之電極墊與引線框架5之間係藉由金屬線4所連接。半導體元件1係藉由密封用樹脂組成物之硬化體6而密封。
以下,以實施例具體說明本發明,但本發明並不限定於此等實施例。配合比例設為重量份。
環氧樹脂1:具有下式(17)所示構造之環氧樹脂(使將酚與甲醛與2-甲氧基萘進行共縮合而得之酚樹脂以表氯醇進行環氧丙基醚化之環氧樹脂。環氧當量251,軟化點58℃。下述一般式(17)中,m/n=1/4。)9.05重量份
酚樹脂1:一般式(5)所示之酚樹脂(住友Durez股份有限公司製,PR-HF-3。式(5)中,d:0,k:3.0。軟化點80℃,羥基當量104。)3.75重量份熔融球狀二氧化矽(平均粒徑30 μm)86.00重量份硬化促進劑1:三苯基膦0.20重量份矽烷偶合劑1:γ-環氧丙氧基丙基三甲氧基矽烷0.30重量份2,3-二羥基萘0.20重量份棕櫚蠟0.20重量份碳黑0.30重量份
將上述者以混合機於常溫下進行混合,以80~100℃之加熱輥進行熔融混練,冷卻後進行粉碎,得到環氧樹脂組成物。使用所得之環氧樹脂組成物依以下方法進行評價。將評價結果示於表1。
.螺旋流動:使用低壓轉移模製成形機(KOHTAKI精機股份有限公司製,KTS-15),於根據EMMI-1-66的螺旋流動測定用之鑄模中,依175℃、注入壓力6.9MPa、硬化時間120秒的條件,注入環氧樹脂組成物,測定流動長度。螺旋流動係流動性之參數,數值較大者為流動性良好。單位為cm。
.吸濕率:使用低壓轉移模製成形機(KOHTAKI精機股份有限公司製,KTS-30),依鑄模溫度175℃、注入壓力7.4MPa、硬化時間120秒的條件,注入成形上述環氧樹脂組成物,製作直徑50mm、厚度3mm之試驗片,依175℃、8小時進行硬化。其中,將所得之試驗片於85℃、相對濕度85%之環境下進行加濕處理168小時,測定加濕處理前後之重量變化而得求吸濕率。單位為重量%。
.耐燃性:使用低壓轉移模製成形機(KOHTAKI精機股份有限公司製,KTS-30),依成形溫度175℃、注入壓力9.8MPa、注入時間15秒、硬化時間120秒之條件,注入成形環氧樹脂組成物而製作127mm×12.7mm×3.2mm厚之耐燃試驗片。使用其等試驗片,依UL94垂直法之規格進行耐燃試驗,判斷耐燃性。於表中係表示Fmax、Σ F及判定後之耐燃等級。
.耐焊性:使用低壓轉移模製成形機(第一精工製,GP-ELF),依鑄模溫度180℃、注入壓力7.4MPa、硬化時間120秒之條件,注入環氧樹脂組成物將矽晶片等進行密封成形,製作80引腳四面扁平封裝(80pQFP:Cu引線框架:封裝尺寸為14×20mm×厚度2.00mm厚、矽晶片尺寸7×7mm×0.35mm,晶片與電路基板之焊墊係以25 μm徑之金屬線進行焊接)。將經後熟化之於175℃加熱處理4小時之封裝6個,於85℃、相對濕度60%進行加濕處理168小時後,進行IR迴焊處理(260℃,依照JEDEC.Leve12條件)。以超音波探傷機觀察是否有處理後之封裝內部的剝離及裂痕,計算不良封裝的個數。不良封裝個數為n個時,以n/6表示。
依照表1、表2及表3之調配,如實施例1般製造環氧樹脂組成物,並如實施例1般進行評價。結果示於表1、表2及表3。
實施例1以外所使用之原材料如下示。
環氧樹脂2:具有下式(17)所示構造之環氧樹脂(使將酚與甲醛與2-甲氧基萘進行共縮合而得之酚樹脂以表氯醇進行環氧丙基醚化之環氧樹脂。環氧當量220,軟化點52℃。下述一般式(17)中,m/n=1/9。)環氧樹脂3:具有下式(17)所示構造之環氧樹脂(使將酚與甲醛與2-甲氧基萘進行共縮合而得之酚樹脂以表氯醇進行環氧丙基醚化之環氧樹脂。環氧當量270,軟化點63℃。下述一般式(17)中,m/n=3/7。)
環氧樹脂4:具有下式(18)所示構造之環氧樹脂(使將酚與甲醛與甲基苯基硫醚進行共縮合而得之酚樹脂以表氯醇進行環氧丙基醚化之環氧樹脂。環氧當量196,軟化點54℃。下述一般式(18)中,m/n=1/4。)
環氧樹脂5:具有伸苯基骨架之酚芳烷基型環氧樹脂(使具有伸苯基骨架之酚芳烷基樹脂以表氯醇進行環氧丙基醚化之環氧樹脂。環氧當量238,軟化點60℃。)環氧樹脂6:鄰甲酚酚醛清漆型環氧樹脂(大日本油墨股份有限公司製,N660。環氧當量196,軟化點62℃。)環氧樹脂7:三苯基甲烷型環氧樹脂(Japan Epoxy Resin股份有限公司製,E-1032H60。環氧當量169,軟化點58℃。)酚樹脂2:具有伸苯基骨架之酚芳烷基樹脂(三井化學股份有限公司製,XLC-4L,軟化點65℃,羥基當量165。)酚樹脂3:三苯基甲烷型酚樹脂(明和化成股份有限公司製,MEH7500。軟化點110℃,羥基當量97。)硬化促進劑2:1,8-二氮雜雙環(5,4,0)十一烯-7硬化促進劑3:下式(19)所示之硬化促進劑
硬化促進劑4:下式(20)所示之硬化促進劑
矽烷偶合劑2:γ-巰基丙基三甲氧基矽烷1,2-二羥氧萘鄰苯二酚五倍子酚
實施例1~18係使用低價且容易處理之具有一般式(1)所示構造之環氧樹脂(a1)作為環氧樹脂,含有改變甲環氧樹脂(a1)之種類與調配比例、含2個以上酚性羥基之化合物(B)之種類與調配比例、無機填充劑(C)之調配比例、硬化促進劑(D)之種類、矽烷偶合劑(E)之種類與調配比例、及於構成芳香環之2個以上相鄰接之碳原子上分別鍵結有羥基之化合物(F)之種類與調配比例者,任一者將環氧樹脂組成物之硬化物於85℃、相對濕度85%之環境下進行加濕處理168小時時之吸濕率均為0.22重量%以下,藉此可得到良好流動性(螺旋流動)、耐燃性及加濕處理後之耐焊性。
另一方面,除了取代具有一般式(1)所示構造之環氧樹脂(a1)作為環氧樹脂,而使用鄰甲酚酚醛清漆型環氧樹脂之外,其餘均與實施例1完全相同之比較例1,係得到吸濕率高、耐燃性及加濕處理後之耐焊性差劣的結果。另外,雖使用了具有一般式(1)所示構造之環氧樹脂(a1)、但無機填充劑量小於80重量%之比較例2,並用三苯基甲烷型環氧樹脂作為環氧樹脂之比較例3,使用或並用三苯基甲烷型酚樹脂作為硬化劑之比較例4、5,任一者均得到吸濕率高、加濕處理後之耐焊性差劣的結果。又,比較例3~5係於耐燃性方面亦差劣,比較例3、4於流動性方面亦差劣。
由以上結果可知,實施例1~18係低成本,且未使用溴系難燃劑、銻化合物而耐燃性優越,加濕處理後之耐焊性亦良好。
1...半導體元件
2...黏晶材硬化體
3...晶粒座
4...金屬線
5...引線框架
6...環氧樹脂組成物之硬化體
圖1為針對使用本發明之環氧樹脂組成物之半導體裝置的一例,表示其剖面構造的圖。
1...半導體元件
2...黏晶材硬化體
3...晶粒座
4...金屬線
5...引線框架
6...環氧樹脂組成物之硬化體
Claims (10)
- 一種半導體密封用樹脂組成物,係含有以下成分者:環氧樹脂(A);含2個以上酚性羥基之化合物(B);相對於樹脂組成物整體為80重量%以上、92重量%以下之無機填充劑(C);相對於樹脂組成物整體為0.1重量%以上、1重量%以下之硬化促進劑(D);相對於樹脂組成物整體為0.01重量%以上、1重量%以下之矽烷偶合劑(E);與相對於樹脂組成物整體為0.01重量%以上、1重量%以下之在構成芳香環之2個以上相鄰接之碳原子上分別鍵結有羥基之化合物(F);其中,上述環氧樹脂(A)係相對於總環氧樹脂含有10重量%以上之環氧樹脂(a1),該環氧樹脂(a1)為具有下述一般式(4)所示構造之環氧樹脂、具有下述一般式(10)所示構造之環氧樹脂、具有下述一般式(11)所示構造之環氧樹脂及具有下述一般式(12)所示構造之環氧樹脂中之任一者;將上述半導體密封用樹脂組成物之硬化物於85℃、相對濕度85%之環境下加濕處理168小時時之吸濕率為0.22重量%以下;
- 如申請專利範圍第1項之半導體密封用樹脂組成物,其中,上述環氧樹脂(a1),係將酚類、醛類、以下述一般式(2)所示化合物進行共縮合所得之酚樹脂類,以表氯醇進行環氧丙基醚化之環氧樹脂;(R1)a -Ar-W1R2 (2)其中,上述一般式(2)中,Ar為碳數6~20之芳香族基,R1為碳數1~6之烴基,互相可為相同或相異;R2為碳數1~4之烴基,W1為O原子或S原子;a為0~10之整數。
- 如申請專利範圍第1項之半導體密封用樹脂組成物,其中,上述含2個以上酚性羥基之化合物(B)係下述 一般式(5)所示之化合物;
- 如申請專利範圍第1項之半導體密封用樹脂組成物,其中,上述硬化促進劑(D)係選自下述一般式(6)所示化合物、下述一般式(7)所示化合物、下述一般式(8)所示化合物及下述一般式(9)所示化合物之至少一者;
- 如申請專利範圍第1項之半導體密封用樹脂組成物,其中,上述化合物(F)係於構成芳香環之2個相鄰接之碳原子上分別鍵結有羥基之化合物。
- 如申請專利範圍第1項之半導體密封用樹脂組成物,其中,上述化合物(F)係於構成萘環之2個以上相鄰接之碳原子上分別鍵結有羥基之化合物。
- 如申請專利範圍第1項之半導體密封用樹脂組成物,其中,上述化合物(F)係於構成萘環之2個相鄰接之碳原子上分別鍵結有羥基之化合物。
- 一種半導體裝置,其特徵為,係藉由申請專利範圍第1項之半導體密封用樹脂組成物之硬化物對半導體元件進行密封而成。
- 如申請專利範圍第3項之半導體密封用樹脂組成物,其中,上述硬化促進劑(D)係選自下述一般式(6)所示化合物、下述一般式(7)所示化合物、下述一般式(8)所示化合物及下述一般式(9)所示化合物之至少一者;
- 一種半導體裝置,其特徵為,係藉由申請專利範圍第3項之半導體密封用樹脂組成物之硬化物對半導體元件進行密封而成。
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Publication number | Priority date | Publication date | Assignee | Title |
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SG109590A1 (en) * | 2003-08-29 | 2005-03-30 | Sumitomo Bakelite Co | Latent catalyst for epoxy resin, epoxy resin composition, and semiconductor device |
JP5320714B2 (ja) * | 2007-09-27 | 2013-10-23 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP5104252B2 (ja) * | 2007-11-29 | 2012-12-19 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP5228496B2 (ja) * | 2008-01-16 | 2013-07-03 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
JP5050923B2 (ja) * | 2008-02-27 | 2012-10-17 | 住友ベークライト株式会社 | 半導体封止用エポキシ樹脂組成物及び半導体装置 |
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US8653205B2 (en) * | 2009-03-11 | 2014-02-18 | Sumitomo Bakelite Co., Ltd. | Resin composition for encapsulating semiconductor and semiconductor device |
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KR20120101413A (ko) * | 2009-10-26 | 2012-09-13 | 스미토모 베이클리트 컴퍼니 리미티드 | 반도체 봉지용 수지 조성물 및 이것을 이용한 반도체 장치 |
MY161145A (en) | 2011-01-28 | 2017-04-14 | Sumitomo Bakelite Co | Epoxy resin composition for sealing, and electronic component device |
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JP5835664B2 (ja) * | 2011-11-28 | 2015-12-24 | スリーボンドファインケミカル株式会社 | 光硬化型樹脂組成物 |
KR101464700B1 (ko) * | 2013-03-19 | 2014-11-27 | 주식회사 유니플러스 | 반도체용 에폭시 수지조성물 |
CN104098870B (zh) * | 2014-05-09 | 2016-04-20 | 傅进 | 一种半导体器材密封用芳烷基环氧树脂材料的制备方法 |
KR102232340B1 (ko) | 2019-11-15 | 2021-03-26 | 한국생산기술연구원 | 알콕시실릴기를 갖는 에폭시 수지의 조성물 및 이의 복합체 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0940748A (ja) * | 1995-07-31 | 1997-02-10 | Sumitomo Bakelite Co Ltd | 半導体封止用エポキシ樹脂組成物 |
JP2001270931A (ja) * | 2000-03-27 | 2001-10-02 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
JP2002037859A (ja) * | 2000-07-19 | 2002-02-06 | Sumitomo Chem Co Ltd | 半導体封止用エポキシ樹脂組成物および樹脂封止型半導体装置 |
JP2004300431A (ja) * | 2003-03-17 | 2004-10-28 | Sumitomo Bakelite Co Ltd | 半導体封止用樹脂組成物および半導体装置 |
JP2005298794A (ja) * | 2003-08-29 | 2005-10-27 | Sumitomo Bakelite Co Ltd | エポキシ樹脂用潜伏性触媒、エポキシ樹脂組成物および半導体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04220413A (ja) * | 1990-12-20 | 1992-08-11 | Nippon Kayaku Co Ltd | フェノール類ノボラック型の化合物、樹脂、樹脂組成物及び硬化物 |
JP2000026573A (ja) | 1998-07-10 | 2000-01-25 | Yuka Shell Epoxy Kk | エポキシ樹脂の製造方法、エポキシ樹脂、及びエポキシ樹脂組成物 |
US6486242B1 (en) * | 1999-04-20 | 2002-11-26 | Sumitomo Bakelite Company Limited | Flame-retardant resin composition and prepreg and laminate using the same |
US6830825B2 (en) * | 2001-04-23 | 2004-12-14 | Sumitomo Bakelite Company, Ltd. | Epoxy resin composition and semiconductor device |
JP2003171529A (ja) | 2001-12-10 | 2003-06-20 | Kyocera Chemical Corp | エポキシ樹脂組成物および半導体装置 |
JP2004155841A (ja) | 2002-11-05 | 2004-06-03 | Kyocera Chemical Corp | 封止用樹脂組成物および半導体封止装置 |
JP2004203911A (ja) | 2002-12-24 | 2004-07-22 | Kyocera Chemical Corp | 封止用樹脂組成物および樹脂封止型半導体装置 |
US7023098B2 (en) | 2003-03-11 | 2006-04-04 | Sumitomo Bakelite Company | Resin composition for encapsulating semiconductor chip and semiconductor device therewith |
TWI300083B (en) * | 2003-04-25 | 2008-08-21 | Mitsui Chemicals Inc | Epoxy resin and its usage |
JP4496739B2 (ja) | 2003-09-09 | 2010-07-07 | 住友ベークライト株式会社 | 硬化促進剤、エポキシ樹脂組成物および半導体装置 |
US20070043166A1 (en) * | 2004-07-29 | 2007-02-22 | Norihisa Hoshika | Epoxy resin composition for encapsulating semiconductor chip and semiconductor device |
TWI396714B (zh) * | 2004-09-01 | 2013-05-21 | Dainippon Ink & Chemicals | 環氧樹脂組成物、其硬化物品、半導體密封材料、新穎環氧樹脂、及製造新穎環氧樹脂之方法 |
SG170630A1 (en) * | 2004-11-02 | 2011-05-30 | Sumitomo Bakelite Co | Epoxy resin composition and semiconductor device |
JP4941804B2 (ja) * | 2005-03-02 | 2012-05-30 | Dic株式会社 | エポキシ樹脂組成物、その硬化物、半導体封止材料、新規フェノール樹脂、および新規エポキシ樹脂 |
JP4706904B2 (ja) * | 2005-05-31 | 2011-06-22 | Dic株式会社 | エポキシ樹脂組成物、その硬化物、新規エポキシ樹脂及びその製造方法 |
JP4706905B2 (ja) * | 2005-05-31 | 2011-06-22 | Dic株式会社 | エポキシ樹脂組成物、その硬化物、新規多価ヒドロキシ化合物およびその製造方法 |
-
2007
- 2007-03-26 MY MYPI20083796A patent/MY145942A/en unknown
- 2007-03-26 WO PCT/JP2007/000300 patent/WO2007125635A1/ja active Application Filing
- 2007-03-26 CN CN2007800046906A patent/CN101379107B/zh active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0940748A (ja) * | 1995-07-31 | 1997-02-10 | Sumitomo Bakelite Co Ltd | 半導体封止用エポキシ樹脂組成物 |
JP2001270931A (ja) * | 2000-03-27 | 2001-10-02 | Sumitomo Bakelite Co Ltd | エポキシ樹脂組成物及び半導体装置 |
JP2002037859A (ja) * | 2000-07-19 | 2002-02-06 | Sumitomo Chem Co Ltd | 半導体封止用エポキシ樹脂組成物および樹脂封止型半導体装置 |
JP2004300431A (ja) * | 2003-03-17 | 2004-10-28 | Sumitomo Bakelite Co Ltd | 半導体封止用樹脂組成物および半導体装置 |
JP2005298794A (ja) * | 2003-08-29 | 2005-10-27 | Sumitomo Bakelite Co Ltd | エポキシ樹脂用潜伏性触媒、エポキシ樹脂組成物および半導体装置 |
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US20070232728A1 (en) | 2007-10-04 |
US7696286B2 (en) | 2010-04-13 |
JP5321057B2 (ja) | 2013-10-23 |
CN101379107B (zh) | 2011-02-09 |
KR101016067B1 (ko) | 2011-02-17 |
WO2007125635A1 (ja) | 2007-11-08 |
CN101379107A (zh) | 2009-03-04 |
TW200801110A (en) | 2008-01-01 |
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