KR20080071880A - 반도체 장치 - Google Patents
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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Abstract
Description
Claims (11)
- 제1도전형의 제1의 반도체 기판과,상기 제1의 반도체 기판의 제1의 주면 상측에 형성되는 제1도전형의 제1의 반도체 영역과,상기 제1의 반도체 기판의 제1의 주면 상측에 상기 제1의 반도체 영역과 떨어져서 형성되는 제1도전형의 제2의 반도체 영역과,상기 제1의 반도체 기판의 제1의 주면측에 있어서 적어도 상기 제1의 반도체 영역과 상기 제2의 반도체 영역 사이의 영역에 형성되는 제2도전형의 제3의 반도체 영역과,상기 제2의 반도체 영역의 표면에 상기 제2의 반도체 영역 내에 형성되는 제2도전형의 제4의 반도체 영역과,상기 제1의 반도체 기판에 접촉하여 상기 제1, 제2 및 제3의 반도체 영역보다도 깊고, 상기 제2 및 제3의 반도체 영역을 둘러싸도록 형성되며, 상기 제2의 반도체 영역의 적어도 일부에 접촉하여 상기 제2의 반도체 영역을 내포하도록 형성되는 제2도전형의 제5의 반도체 영역과,상기 제1의 반도체 영역에 전기적으로 접속되는 제1의 전극과,상기 제2 및 제4의 반도체 영역에 전기적으로 접속되는 제2의 전극과,상기 제4의 반도체 영역과 상기 제5의 반도체 영역 사이의 상기 제2의 반도체 영역 위에 절연막을 통해 형성되는 도전층과,상기 제1의 반도체 기판에 전기적으로 결합되는 제4의 전극을 구비하고,상기 제3의 반도체 영역 바로 아래의 상기 제5의 반도체 영역과 상기 제1의 반도체 기판 사이의 접합 계면으로부터의 상기 제1의 반도체 기판의 제2주면까지의 거리 t는, 상기 제2 및 제3의 반도체 영역 사이의 거리 L과,L≤t≤2·L의 관계를 충족시키는 것을 특징으로 하는 반도체 장치.
- 제 1항에 있어서,상기 제1의 반도체 기판과 상기 제4의 전극 사이에 형성되는 상기 제1의 반도체 기판보다도 저저항의 제2의 반도체 기판을 더 구비하는 것을 특징으로 하는 반도체 장치.
- 제 1항에 있어서,상기 제3의 반도체 영역은 상기 제1의 반도체 영역보다도 깊고 상기 제1의 반도체 영역을 둘러싸도록 형성되는 것을 특징으로 하는 반도체 장치.
- 제 1항에 있어서,상기 제5의 반도체 영역은, 상기 제1부터 제3의 반도체 영역을 둘러싸도록 형성되는 것을 특징으로 하는 반도체 장치.
- 제 1항에 있어서,상기 제5의 반도체 영역의 표면에 상기 제2 및 제3의 반도체 영역 사이에 상기 제2 및 제3의 반도체 영역과 떨어져서 형성되는 제1도전형의 제6의 반도체 영역과,상기 제6의 반도체 영역에 전기적으로 접속되는 제5의 전극을 더 구비하는 것을 특징으로 하는 반도체 장치.
- 제 5항에 있어서,상기 제6의 반도체 영역에 접촉하여 상기 제2 및 제3의 반도체 영역 사이에 형성되는 상기 제6의 반도체 영역보다도 고저항의 제7의 반도체 영역을 더 구비하는 것을 특징으로 하는 반도체 장치.
- 제1도전형의 제1의 반도체 기판과,상기 제1의 반도체 기판의 제1의 주면 상측에 형성되는 제2도전형의 제1의 반도체 영역과,상기 제1의 반도체 기판의 제1의 주면 상측에 상기 제1의 반도체 영역과 떨어져서 형성되는 제1도전형의 제2의 반도체 영역과,상기 제1의 반도체 기판에 접촉하여 상기 제1의 반도체 영역보다도 깊고, 상기 제1의 반도체 영역을 둘러싸도록 형성되며, 상기 제2의 반도체 영역의 적어도 일부에 접촉하여 상기 제2의 반도체 영역을 내포하도록 형성되는 제2도전형의 제3의 반도체 영역과,상기 제1의 반도체 영역에 전기적으로 접속되는 제1의 전극과,상기 제2의 반도체 영역에 전기적으로 접속되는 제2의 전극과,상기 제1의 반도체 기판 제2의 주면을 통해 상기 제1의 반도체 기판에 전기적으로 결합되는 제3의 전극을 구비하고,상기 제1의 반도체 영역 바로 아래의 상기 제3의 반도체 영역과 상기 제1의 반도체 기판 사이의 접합 계면으로부터 상기 제1의 반도체 기판의 제2주면까지의 거리 t는, 상기 제1 및 제2의 반도체 영역 사이의 거리 L과,L≤t≤2·L의 관계를 충족시키는 것을 특징으로 하는 반도체 장치.
- 제 7항에 있어서,상기 제1의 반도체 기판과 상기 제3의 전극 사이에 형성되는 상기 제1의 반 도체 기판보다도 저저항의 제2의 반도체 기판(고농도 p형 기판)을 더 구비하는 것을 특징으로 하는 반도체 장치.
- 제 7항에 있어서,상기 제3의 반도체 영역은 상기 제2의 반도체 영역보다도 깊고 상기 제1의 반도체 영역을 둘러싸도록 형성되는 것을 특징으로 하는 반도체 장치.
- 제 7항에 있어서,상기 제2의 반도체 영역은, 평면 레이아웃에 있어서 상기 제1의 반도체 영역을 둘러싸도록 형성되는 것을 특징으로 하는 반도체 장치.
- 제 7항에 있어서,상기 제3의 반도체 영역에서, 상기 제1 및 제2의 반도체 영역 사이에 상기 제2의 반도체 영역에 접촉하여 배치되는 제4의 반도체 영역을 더 구비하는 것을 특징으로 하는 반도체 장치.
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JPJP-P-2007-00017916 | 2007-01-29 | ||
JP2007017916A JP5191132B2 (ja) | 2007-01-29 | 2007-01-29 | 半導体装置 |
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KR20080071880A true KR20080071880A (ko) | 2008-08-05 |
KR100895057B1 KR100895057B1 (ko) | 2009-05-04 |
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US (2) | US7473965B2 (ko) |
JP (1) | JP5191132B2 (ko) |
KR (1) | KR100895057B1 (ko) |
CN (1) | CN100585873C (ko) |
DE (1) | DE102007030804B4 (ko) |
TW (1) | TWI336131B (ko) |
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US8106451B2 (en) * | 2006-08-02 | 2012-01-31 | International Rectifier Corporation | Multiple lateral RESURF LDMOST |
JP5191132B2 (ja) * | 2007-01-29 | 2013-04-24 | 三菱電機株式会社 | 半導体装置 |
JP5272410B2 (ja) * | 2008-01-11 | 2013-08-28 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US8164162B2 (en) * | 2009-06-11 | 2012-04-24 | Force Mos Technology Co., Ltd. | Power semiconductor devices integrated with clamp diodes sharing same gate metal pad |
JP2011146440A (ja) * | 2010-01-12 | 2011-07-28 | Toyota Motor Corp | 半導体装置 |
CN102804384B (zh) * | 2010-02-25 | 2015-06-24 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
JP2011238771A (ja) * | 2010-05-11 | 2011-11-24 | Hitachi Ltd | 半導体装置 |
US8716746B2 (en) | 2010-08-17 | 2014-05-06 | Denso Corporation | Semiconductor device |
US8704328B2 (en) | 2011-06-24 | 2014-04-22 | Fuji Electric Co., Ltd. | High-voltage integrated circuit device |
JP5435138B2 (ja) * | 2011-06-24 | 2014-03-05 | 富士電機株式会社 | 高耐圧集積回路装置 |
CN102332497B (zh) * | 2011-10-08 | 2014-03-19 | 南京国盛电子有限公司 | 毫米波雪崩二极管用硅外延片的制造方法 |
US8835978B2 (en) * | 2012-05-14 | 2014-09-16 | Infineon Technologies Ag | Lateral transistor on polymer |
JP6158123B2 (ja) * | 2014-03-14 | 2017-07-05 | 株式会社東芝 | 半導体装置 |
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JP6642507B2 (ja) * | 2016-10-18 | 2020-02-05 | 株式会社デンソー | 半導体装置およびその製造方法 |
US10497803B2 (en) * | 2017-08-08 | 2019-12-03 | Globalfoundries Inc. | Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications |
US11276770B2 (en) | 2019-11-05 | 2022-03-15 | Globalfoundries U.S. Inc. | Gate controlled lateral bipolar junction/heterojunction transistors |
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US4963951A (en) * | 1985-11-29 | 1990-10-16 | General Electric Company | Lateral insulated gate bipolar transistors with improved latch-up immunity |
JPH02180074A (ja) * | 1988-12-29 | 1990-07-12 | Fujitsu Ltd | オフセット型電界効果トランジスタ及び絶縁ゲート型バイポーラトランジスタ |
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2007
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CN101236987A (zh) | 2008-08-06 |
JP2008186921A (ja) | 2008-08-14 |
TW200832700A (en) | 2008-08-01 |
DE102007030804B4 (de) | 2013-06-06 |
KR100895057B1 (ko) | 2009-05-04 |
TWI336131B (en) | 2011-01-11 |
US7473965B2 (en) | 2009-01-06 |
US20090057712A1 (en) | 2009-03-05 |
US7786532B2 (en) | 2010-08-31 |
DE102007030804A1 (de) | 2008-08-07 |
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JP5191132B2 (ja) | 2013-04-24 |
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