JP2022139619A - 半導体装置及び半導体回路 - Google Patents
半導体装置及び半導体回路 Download PDFInfo
- Publication number
- JP2022139619A JP2022139619A JP2021040092A JP2021040092A JP2022139619A JP 2022139619 A JP2022139619 A JP 2022139619A JP 2021040092 A JP2021040092 A JP 2021040092A JP 2021040092 A JP2021040092 A JP 2021040092A JP 2022139619 A JP2022139619 A JP 2022139619A
- Authority
- JP
- Japan
- Prior art keywords
- region
- trench
- electrode
- semiconductor
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 287
- 239000012535 impurity Substances 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims description 6
- 238000011084 recovery Methods 0.000 abstract description 52
- 239000010410 layer Substances 0.000 description 55
- 230000015556 catabolic process Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 14
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000004645 scanning capacitance microscopy Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
第1の実施形態の半導体装置は、第1の面と、第1の面と対向する第2の面を有する半導体層であって、第1の面の側に設けられた第1のトレンチと、第1の面の側に設けられた第2のトレンチと、第1のトレンチ及び第2のトレンチに接する第1導電形の第1の半導体領域と、第1の面と第1の半導体領域との間に設けられ、第1のトレンチと第2のトレンチとの間に設けられ、第2のトレンチに接する第2導電形の第2の半導体領域と、第1の半導体領域と第1の面との間に設けられ、第1のトレンチと第2の半導体領域との間に設けられ、第1のトレンチに接し、第2の半導体領域に接する第1導電形の第3の半導体領域と、第3の半導体領域と第1の面との間に設けられ、第1のトレンチと第2の半導体領域との間に設けられ、第1のトレンチに接し、第2の半導体領域に接し、第2の半導体領域の第2導電形不純物濃度よりも高い第2導電形不純物濃度を有する第2導電形の第4の半導体領域と、第2の半導体領域と第1の面との間に設けられ、第4の半導体領域との間に第2の半導体領域が設けられ、第2のトレンチに接し、第2の半導体領域の第2導電形不純物濃度よりも高い第2導電形不純物濃度を有する第2導電形の第5の半導体領域と、を含む半導体層と、半導体層の第1の面の側に設けられ、第2の半導体領域、第4の半導体領域、及び第5の半導体領域に接する第1の電極と、半導体層の第2の面の側に設けられた第2の電極と、を備える。
第2の実施形態の半導体装置は、第4の半導体領域との間に、第1のトレンチを挟んで第1のトレンチに接する第5の半導体領域が設けられる点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については記述を省略する。
第3の実施形態の半導体装置は、第1のトレンチの中、及び、第2のトレンチの中に設けられ、第1の電極及び第2の電極と電気的に分離された第3の電極を、更に備える点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については記述を省略する。
第4の実施形態の半導体装置は、半導体層が第1の半導体領域と第2の面との間に、更に第1導電形の半導体領域を含む点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する場合がある。
第5の実施形態の半導体装置は、第1の実施形態のpinダイオードを含むRC-IGBTである点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
12 アノード電極(第1の電極)
12a 第1の部分
12b 第2の部分
14 カソード電極(第2の電極)
18 トレンチゲート電極(第3の電極)
20a トレンチ(第1のトレンチ)
20b トレンチ(第2のトレンチ)
24 ドリフト領域(第1の半導体領域)
26 ベース領域(第2の半導体領域)
28 チャネル領域(第3の半導体領域)
30a 第1のアノード領域(第4の半導体領域)
30b 第2のアノード領域(第5の半導体領域)
62 上部電極(第1の電極)
64 下部電極(第2の電極)
100 pinダイオード(半導体装置)
200 pinダイオード(半導体装置)
300 pinダイオード(半導体装置)
310 電極パッド
350 ゲートドライバ回路(制御回路)
400 pinダイオード(半導体装置)
500 RC-IGBT(半導体装置)
P1 第1の面
P2 第2の面
Claims (8)
- 第1の面と、前記第1の面と対向する第2の面を有する半導体層であって、
前記第1の面の側に設けられた第1のトレンチと、
前記第1の面の側に設けられた第2のトレンチと、
前記第1のトレンチ及び前記第2のトレンチに接する第1導電形の第1の半導体領域と、
前記第1の面と前記第1の半導体領域との間に設けられ、前記第1のトレンチと前記第2のトレンチとの間に設けられ、前記第2のトレンチに接する第2導電形の第2の半導体領域と、
前記第1の半導体領域と前記第1の面との間に設けられ、前記第1のトレンチと前記第2の半導体領域との間に設けられ、前記第1のトレンチに接し、前記第2の半導体領域に接する第1導電形の第3の半導体領域と、
前記第3の半導体領域と前記第1の面との間に設けられ、前記第1のトレンチと前記第2の半導体領域との間に設けられ、前記第1のトレンチに接し、前記第2の半導体領域に接し、前記第2の半導体領域の第2導電形不純物濃度よりも高い第2導電形不純物濃度を有する第2導電形の第4の半導体領域と、
前記第2の半導体領域と前記第1の面との間に設けられ、前記第4の半導体領域との間に前記第2の半導体領域が設けられ、前記第2のトレンチに接し、前記第2の半導体領域の第2導電形不純物濃度よりも高い第2導電形不純物濃度を有する第2導電形の第5の半導体領域と、
を含む半導体層と、
前記半導体層の前記第1の面の側に設けられ、前記第2の半導体領域、前記第4の半導体領域、及び前記第5の半導体領域に接する第1の電極と、
前記半導体層の前記第2の面の側に設けられた第2の電極と、
を備えた半導体装置。 - 前記第1のトレンチと前記第2のトレンチとの間の距離は、前記第1のトレンチの深さよりも大きい請求項1記載の半導体装置。
- 前記第3の半導体領域の第1導電形不純物濃度は、前記第1の半導体領域の第1導電形不純物濃度よりも高い請求項1又は請求項2記載の半導体装置。
- 前記第1の電極の前記第2の半導体領域と接する第1の部分の材料は、前記第1の電極の前記第4の半導体領域と接する第2の部分の材料と異なる請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1のトレンチの中、及び前記第2のトレンチの中に設けられ、前記第1の電極及び前記第2の電極と電気的に分離された第3の電極を、更に備える請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1導電形がn形の場合、前記第1の電極と前記第2の電極との間に、前記第2の電極の側が正となる電圧が印加されている状態で、前記第3の電極に前記第1の電極に対し負となる電圧が印加され、
前記第1導電形がp形の場合、前記第1の電極と前記第2の電極との間に、前記第2の電極の側が負となる電圧が印加されている状態で、前記第3の電極に前記第1の電極に対し正となる電圧が印加される請求項5記載の半導体装置。 - 前記半導体層の前記第1の面の側に設けられ、前記第3の電極に電気的に接続された電極パッドを、更に備える請求項5又は請求項6記載の半導体装置。
- 請求項5ないし請求項7いずれか一項記載の半導体装置と、
前記半導体装置を駆動し、前記第1導電形がn形の場合、前記第1の電極と前記第2の電極との間に、前記第2の電極の側が正となる電圧が印加されている状態で、前記第3の電極に前記第1の電極に対し負となる電圧を印加し、前記第2導電形がp形の場合、前記第1の電極と前記第2の電極との間に、前記第2の電極の側が負となる電圧が印加されている状態で、前記第3の電極に前記第1の電極に対し正となる電圧を印加する制御回路と、
を備える半導体回路。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021040092A JP7476129B2 (ja) | 2021-03-12 | 2021-03-12 | 半導体装置及び半導体回路 |
CN202110835931.3A CN115084251A (zh) | 2021-03-12 | 2021-07-23 | 半导体装置以及半导体电路 |
US17/473,579 US20220293592A1 (en) | 2021-03-12 | 2021-09-13 | Semiconductor device and semiconductor circuit |
EP22158414.7A EP4057361A1 (en) | 2021-03-12 | 2022-02-24 | Semiconductor device and semiconductor circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021040092A JP7476129B2 (ja) | 2021-03-12 | 2021-03-12 | 半導体装置及び半導体回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022139619A true JP2022139619A (ja) | 2022-09-26 |
JP7476129B2 JP7476129B2 (ja) | 2024-04-30 |
Family
ID=80785217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021040092A Active JP7476129B2 (ja) | 2021-03-12 | 2021-03-12 | 半導体装置及び半導体回路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220293592A1 (ja) |
EP (1) | EP4057361A1 (ja) |
JP (1) | JP7476129B2 (ja) |
CN (1) | CN115084251A (ja) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4893609B2 (ja) | 2007-12-07 | 2012-03-07 | トヨタ自動車株式会社 | 半導体装置とその半導体装置を備えている給電装置の駆動方法 |
WO2013014943A2 (en) * | 2011-07-27 | 2013-01-31 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Diode, semiconductor device, and mosfet |
US8710585B1 (en) * | 2013-02-25 | 2014-04-29 | Alpha And Omega Semiconductor Incorporated | High voltage fast recovery trench diode |
KR20150108291A (ko) | 2014-03-17 | 2015-09-25 | 가부시끼가이샤 도시바 | 반도체 장치 |
US9634128B2 (en) * | 2014-03-17 | 2017-04-25 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP6003961B2 (ja) * | 2014-11-04 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置 |
JP2016174041A (ja) * | 2015-03-16 | 2016-09-29 | 株式会社東芝 | 半導体装置 |
JP6674395B2 (ja) * | 2017-02-03 | 2020-04-01 | 株式会社東芝 | 半導体装置 |
WO2018220879A1 (ja) | 2017-05-31 | 2018-12-06 | 富士電機株式会社 | 半導体装置 |
-
2021
- 2021-03-12 JP JP2021040092A patent/JP7476129B2/ja active Active
- 2021-07-23 CN CN202110835931.3A patent/CN115084251A/zh active Pending
- 2021-09-13 US US17/473,579 patent/US20220293592A1/en active Pending
-
2022
- 2022-02-24 EP EP22158414.7A patent/EP4057361A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP7476129B2 (ja) | 2024-04-30 |
US20220293592A1 (en) | 2022-09-15 |
EP4057361A1 (en) | 2022-09-14 |
CN115084251A (zh) | 2022-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9299695B2 (en) | Semiconductor device | |
KR100895057B1 (ko) | 반도체 장치 | |
KR100275756B1 (ko) | 트렌치 절연 게이트 바이폴라 트랜지스터 | |
JP2019169597A (ja) | 半導体装置 | |
US8354691B2 (en) | Lateral insulated-gate bipolar transistor | |
US11222891B2 (en) | Semiconductor device and semiconductor circuit | |
KR20150061971A (ko) | 전력 반도체 소자 및 그의 제조 방법 | |
JP2009512207A (ja) | パワー半導体デバイス | |
JP2021150544A (ja) | 半導体装置及び半導体回路 | |
US20220302288A1 (en) | Semiconductor device and semiconductor circuit | |
JP7476129B2 (ja) | 半導体装置及び半導体回路 | |
US9209287B2 (en) | Power semiconductor device | |
EP1276156A1 (en) | High power bipolar transistor | |
US11984473B2 (en) | Semiconductor device | |
JP7407757B2 (ja) | 半導体装置 | |
KR20150076768A (ko) | 전력 반도체 소자 | |
US11955477B2 (en) | Semiconductor device and semiconductor circuit | |
US20240088220A1 (en) | Semiconductor device | |
US11152466B2 (en) | Semiconductor device | |
KR101870823B1 (ko) | 전력 반도체 소자 및 그 제조방법 | |
CN117393594A (zh) | 一种低导通损耗和低关断损耗的可变电导igbt | |
JP2023138031A (ja) | 半導体装置 | |
KR19980044025A (ko) | 에미터 스위치 사이리스터 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230202 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240116 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240319 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240417 |