KR20080010623A - 비휘발성 반도체 메모리 소자 및 그 제조방법 - Google Patents

비휘발성 반도체 메모리 소자 및 그 제조방법 Download PDF

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Publication number
KR20080010623A
KR20080010623A KR1020060070886A KR20060070886A KR20080010623A KR 20080010623 A KR20080010623 A KR 20080010623A KR 1020060070886 A KR1020060070886 A KR 1020060070886A KR 20060070886 A KR20060070886 A KR 20060070886A KR 20080010623 A KR20080010623 A KR 20080010623A
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KR
South Korea
Prior art keywords
film
transition metal
doped
dielectric
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020060070886A
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English (en)
Korean (ko)
Inventor
신상민
설광수
진영구
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삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020060070886A priority Critical patent/KR20080010623A/ko
Priority to CNA200610172731XA priority patent/CN101114677A/zh
Priority to US11/723,081 priority patent/US20080023744A1/en
Priority to JP2007156400A priority patent/JP2008034814A/ja
Publication of KR20080010623A publication Critical patent/KR20080010623A/ko
Priority to US12/805,823 priority patent/US20100323509A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/697—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having trapping at multiple separated sites, e.g. multi-particles trapping sites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020060070886A 2006-07-27 2006-07-27 비휘발성 반도체 메모리 소자 및 그 제조방법 Withdrawn KR20080010623A (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020060070886A KR20080010623A (ko) 2006-07-27 2006-07-27 비휘발성 반도체 메모리 소자 및 그 제조방법
CNA200610172731XA CN101114677A (zh) 2006-07-27 2006-12-26 非易失半导体存储器装置及其制造方法
US11/723,081 US20080023744A1 (en) 2006-07-27 2007-03-16 Nonvolatile semiconductor memory device and method of manufacturing the same
JP2007156400A JP2008034814A (ja) 2006-07-27 2007-06-13 不揮発性半導体メモリ素子及びその製造方法
US12/805,823 US20100323509A1 (en) 2006-07-27 2010-08-20 Nonvolatile semiconductor memory device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060070886A KR20080010623A (ko) 2006-07-27 2006-07-27 비휘발성 반도체 메모리 소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR20080010623A true KR20080010623A (ko) 2008-01-31

Family

ID=38985296

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060070886A Withdrawn KR20080010623A (ko) 2006-07-27 2006-07-27 비휘발성 반도체 메모리 소자 및 그 제조방법

Country Status (4)

Country Link
US (2) US20080023744A1 (https=)
JP (1) JP2008034814A (https=)
KR (1) KR20080010623A (https=)
CN (1) CN101114677A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100906524B1 (ko) * 2006-09-29 2009-07-07 가부시끼가이샤 도시바 불휘발성 반도체 메모리
KR101039801B1 (ko) * 2008-10-07 2011-06-09 고려대학교 산학협력단 비휘발성 메모리 소자 및 이를 제조하는 방법
KR101052475B1 (ko) * 2008-12-29 2011-07-28 주식회사 하이닉스반도체 비휘발성 메모리 소자의 제조 방법
KR101452632B1 (ko) * 2013-05-14 2014-10-22 경희대학교 산학협력단 수직형 투과 반도체 소자

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* Cited by examiner, † Cited by third party
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KR20080031594A (ko) * 2006-10-04 2008-04-10 삼성전자주식회사 전하 트랩형 메모리 소자
US7973357B2 (en) * 2007-12-20 2011-07-05 Samsung Electronics Co., Ltd. Non-volatile memory devices
JP5071981B2 (ja) * 2008-03-05 2012-11-14 日本電信電話株式会社 半導体メモリ
US8062918B2 (en) * 2008-05-01 2011-11-22 Intermolecular, Inc. Surface treatment to improve resistive-switching characteristics
US20090303794A1 (en) * 2008-06-04 2009-12-10 Macronix International Co., Ltd. Structure and Method of A Field-Enhanced Charge Trapping-DRAM
KR20100027871A (ko) * 2008-09-03 2010-03-11 삼성전자주식회사 비휘발성 메모리 소자
US8252653B2 (en) * 2008-10-21 2012-08-28 Applied Materials, Inc. Method of forming a non-volatile memory having a silicon nitride charge trap layer
JP4917085B2 (ja) 2008-12-15 2012-04-18 東京エレクトロン株式会社 半導体装置
JP4792094B2 (ja) * 2009-03-09 2011-10-12 株式会社東芝 不揮発性半導体メモリ
CN102237367B (zh) * 2010-05-07 2014-09-24 中国科学院微电子研究所 一种闪存器件及其制造方法
JP5367763B2 (ja) * 2011-06-06 2013-12-11 株式会社東芝 不揮発性半導体メモリ
JP5462897B2 (ja) * 2012-01-24 2014-04-02 東京エレクトロン株式会社 半導体装置の製造方法
JP5646569B2 (ja) * 2012-09-26 2014-12-24 株式会社東芝 半導体装置
JP5583238B2 (ja) * 2013-04-26 2014-09-03 株式会社東芝 Ｎａｎｄ型不揮発性半導体メモリ装置およびその製造方法
CN104217951B (zh) * 2013-06-04 2018-03-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
KR102372856B1 (ko) * 2014-11-28 2022-03-10 엘지전자 주식회사 마이크로 렌즈 어레이를 구비하는 광 검출 센서
US9368510B1 (en) * 2015-05-26 2016-06-14 Sandisk Technologies Inc. Method of forming memory cell with high-k charge trapping layer
JP6448503B2 (ja) * 2015-09-10 2019-01-09 東芝メモリ株式会社 不揮発性半導体記憶装置
CN106558481B (zh) * 2015-09-24 2021-05-07 中国科学院微电子研究所 半导体器件制造方法
CN106449647A (zh) * 2016-10-24 2017-02-22 上海华力微电子有限公司 Nor型闪存器件以及nor型闪存器件制造方法
CN107146759B (zh) * 2017-05-04 2020-06-05 湘潭大学 一种基于离子注入掺杂的氧化铪铁电栅制备方法
JP6293394B1 (ja) * 2017-07-04 2018-03-14 三菱電機株式会社 半導体装置、および、半導体装置の製造方法
JP2019054068A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体記憶装置及びその製造方法
JP7354138B2 (ja) 2018-04-02 2023-10-02 ラム リサーチ コーポレーション 酸化ハフニウム系強誘電材料のためのキャップ層
EP3790737A4 (en) * 2018-05-11 2021-12-01 Hewlett-Packard Development Company, L.P. PASSIVATION STACK
CN111416035B (zh) * 2020-03-26 2023-02-07 中国科学院微电子研究所 非易失霍尔传感器及其制造方法、测试方法
US20230197826A1 (en) * 2021-12-21 2023-06-22 Christine RADLINGER Self-aligned gate endcap (sage) architectures with improved cap

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7132336B1 (en) * 2002-02-12 2006-11-07 Lsi Logic Corporation Method and apparatus for forming a memory structure having an electron affinity region
US7005697B2 (en) * 2002-06-21 2006-02-28 Micron Technology, Inc. Method of forming a non-volatile electron storage memory and the resulting device
KR100597642B1 (ko) * 2004-07-30 2006-07-05 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
DE102004052086A1 (de) * 2004-10-26 2006-04-27 Basf Ag Kondensatoren hoher Energiedichte
US7355238B2 (en) * 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention
US20060131633A1 (en) * 2004-12-21 2006-06-22 Micron Technology, Inc. Integrated two device non-volatile memory
US7790516B2 (en) * 2006-07-10 2010-09-07 Qimonda Ag Method of manufacturing at least one semiconductor component and memory cells

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100906524B1 (ko) * 2006-09-29 2009-07-07 가부시끼가이샤 도시바 불휘발성 반도체 메모리
KR101039801B1 (ko) * 2008-10-07 2011-06-09 고려대학교 산학협력단 비휘발성 메모리 소자 및 이를 제조하는 방법
KR101052475B1 (ko) * 2008-12-29 2011-07-28 주식회사 하이닉스반도체 비휘발성 메모리 소자의 제조 방법
KR101452632B1 (ko) * 2013-05-14 2014-10-22 경희대학교 산학협력단 수직형 투과 반도체 소자

Also Published As

Publication number Publication date
US20080023744A1 (en) 2008-01-31
JP2008034814A (ja) 2008-02-14
CN101114677A (zh) 2008-01-30
US20100323509A1 (en) 2010-12-23

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20060727

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid