KR20070098605A - 기판처리장치 및 기판처리방법 - Google Patents
기판처리장치 및 기판처리방법 Download PDFInfo
- Publication number
- KR20070098605A KR20070098605A KR1020070030356A KR20070030356A KR20070098605A KR 20070098605 A KR20070098605 A KR 20070098605A KR 1020070030356 A KR1020070030356 A KR 1020070030356A KR 20070030356 A KR20070030356 A KR 20070030356A KR 20070098605 A KR20070098605 A KR 20070098605A
- Authority
- KR
- South Korea
- Prior art keywords
- brush
- substrate
- wafer
- cleaning
- pressing pressure
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 172
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004140 cleaning Methods 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 51
- 238000003825 pressing Methods 0.000 claims description 43
- 230000002093 peripheral effect Effects 0.000 claims description 40
- 238000003672 processing method Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 118
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 239000000356 contaminant Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005406 washing Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Images
Classifications
-
- B08B1/32—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
Abstract
Description
Claims (8)
- 기판처리장치에 있어서,기판을 파지하는 기판파지기구와,탄성변형가능한 재료를 이용하여 형성되어, 상기 기판파지기구에 파지된 기판의 한쪽 표면에 따르는 평행방향에 대하여 교차하는 세정면을 가지는 브러쉬와,상기 기판파지기구에 파지된 기판에 대하여 상기 브러쉬를 이동하게 하는 브러쉬이동기구와,상기 브러쉬이동기구를 제어하여, 상기 세정면을 상기 기판파지기구에 파지된 기판의 주단면에 접촉하게 하기 위한 제어유닛과,기판의 주단면(周端面)에 대한 상기 브러쉬의 상기 평행방향의 누름압을 미리 설정된 누름압으로 유지하는 누름압유지기구를 구비하는 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 세정면은, 상기 평행방향과 직교하는 방향으로 뻗은 중심축선을 가지는 원추면인 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 세정면은, 상기 평행방향과 직교하는 방향으로 뻗은 중심축선을 가지는 원통면인 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 세정면에 홈이 형성되어 있는 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 브러쉬는, 회전대칭하는 형상을 가지고 있어,상기 브러쉬를 그 중심축선을 중심으로 회전하게 하는 브러쉬회전기구를 구비하는 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 기판파지기구에 파지된 기판과 상기 브러쉬를, 상기 브러쉬가 해당 기판의 원주방향으로 이동하도록 상대이동하게 하는 브러쉬상대이동기구를 구비하는 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 기판파지기구에 파지된 기판의 적어도 상기 한쪽 표면의 주연(周緣)영역보다 안쪽인 영역에 처리액을 공급하는 처리액공급기구를 구비하는 것을 특징으로 하는 기판처리장치.
- 기판처리방법에 있어서,기판파지기구에 의해 기판을 파지하는 기판파지공정과,탄성변형 가능한 재료를 사용하여 형성되고, 상기 기판파지기구에 파지된 기판의 한쪽 표면에 따르는 평행방향에 대하여 교차하는 세정면을 가지는 브러쉬를 이동하게 하며, 해당 브러쉬의 세정면을 상기 기판파지기구에 파지된 기판의 주단면에 접촉하게 하는 브러쉬접촉공정과,상기 브러쉬접촉공정에 있어서, 기판의 주단면(周端面)에 대한 상기 브러쉬의 상기 평행방향의 누름압을 미리 설정된 누름압으로 유지하는 누름압유지공정으로 이루어지는 것을 특징으로 하는 기판처리방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006095550A JP2007273608A (ja) | 2006-03-30 | 2006-03-30 | 基板処理装置および基板処理方法 |
JPJP-P-2006-00095550 | 2006-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070098605A true KR20070098605A (ko) | 2007-10-05 |
KR100874997B1 KR100874997B1 (ko) | 2008-12-19 |
Family
ID=38556734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070030356A KR100874997B1 (ko) | 2006-03-30 | 2007-03-28 | 기판처리장치 및 기판처리방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070226925A1 (ko) |
JP (1) | JP2007273608A (ko) |
KR (1) | KR100874997B1 (ko) |
CN (1) | CN101045230B (ko) |
TW (1) | TW200805472A (ko) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4928343B2 (ja) * | 2007-04-27 | 2012-05-09 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2009088244A (ja) * | 2007-09-28 | 2009-04-23 | Tokyo Electron Ltd | 基板クリーニング装置、基板処理装置、基板クリーニング方法、基板処理方法及び記憶媒体 |
US8356376B2 (en) * | 2008-06-18 | 2013-01-22 | Tokyo Electron Limited | Substrate cleaning apparatus, substrate cleaning method, and storage medium |
JP4976341B2 (ja) * | 2008-06-18 | 2012-07-18 | 東京エレクトロン株式会社 | 基板洗浄装置および基板洗浄方法、ならびに記憶媒体 |
CN102176981B (zh) * | 2008-10-31 | 2013-04-03 | 松下电器产业株式会社 | 基板清洗装置及其方法 |
US20110296634A1 (en) * | 2010-06-02 | 2011-12-08 | Jingdong Jia | Wafer side edge cleaning apparatus |
NL2008695A (en) * | 2011-05-25 | 2012-11-27 | Asml Netherlands Bv | Lithographic apparatus comprising substrate table. |
DE102012100825A1 (de) * | 2011-12-01 | 2013-06-06 | solar-semi GmbH | Vorrichtung zum Bearbeiten eines Substrats und Verfahren hierzu |
CN102909185A (zh) * | 2012-10-26 | 2013-02-06 | 世成电子(深圳)有限公司 | 一种清洁机 |
JP6297308B2 (ja) * | 2012-12-06 | 2018-03-20 | 株式会社荏原製作所 | 基板洗浄装置及び基板洗浄方法 |
US20140310895A1 (en) * | 2013-04-19 | 2014-10-23 | Applied Materials, Inc. | Scrubber brush force control assemblies, apparatus and methods for chemical mechanical polishing |
SG10201404086XA (en) * | 2013-07-19 | 2015-02-27 | Ebara Corp | Substrate cleaning device, substrate cleaning apparatus, method for manufacturing cleaned substrate and substrate processing apparatus |
CN104952695A (zh) * | 2014-03-24 | 2015-09-30 | 盛美半导体设备(上海)有限公司 | 晶圆清洗方法和设备 |
JP6600470B2 (ja) | 2014-04-01 | 2019-10-30 | 株式会社荏原製作所 | 洗浄装置及び洗浄方法 |
CN111589752B (zh) * | 2014-04-01 | 2023-02-03 | 株式会社荏原制作所 | 清洗装置 |
US20160045937A1 (en) * | 2014-08-12 | 2016-02-18 | United Microelectronics Corporation | Substrate cleaning apparatus and method for cleaning a substrate |
KR102004109B1 (ko) | 2014-10-31 | 2019-07-25 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 세정 장치 및 기판 세정 방법 |
CN107452643B (zh) * | 2016-05-31 | 2020-11-13 | 弘塑科技股份有限公司 | 基板压平设备与使用所述基板压平设备的半导体制造方法 |
US11318506B2 (en) * | 2018-08-16 | 2022-05-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus for cleaning semiconductor equipment |
CN109382352A (zh) * | 2018-08-29 | 2019-02-26 | 芜湖源码自动化设备有限公司 | 一种自动刷片机 |
JP7149869B2 (ja) * | 2019-02-07 | 2022-10-07 | 株式会社荏原製作所 | 基板洗浄方法および基板洗浄装置 |
JP7348623B2 (ja) * | 2019-05-28 | 2023-09-21 | アイオン株式会社 | 基板洗浄用ブラシ |
CN110328180A (zh) * | 2019-07-19 | 2019-10-15 | 山东时代新纪元机器人有限公司 | 板材检测用测样清洗装置及清洗方法 |
CN110524407A (zh) * | 2019-08-16 | 2019-12-03 | 西安奕斯伟硅片技术有限公司 | 一种晶圆的处理方法和处理装置 |
JP7348021B2 (ja) | 2019-10-15 | 2023-09-20 | 株式会社荏原製作所 | 基板洗浄装置及び基板洗浄方法 |
CN110767536A (zh) * | 2019-10-30 | 2020-02-07 | 上海华力微电子有限公司 | 晶圆清洗方法 |
CN111599727A (zh) * | 2020-06-01 | 2020-08-28 | 厦门通富微电子有限公司 | 一种晶圆表面附着物清除设备 |
CN111906077B (zh) * | 2020-06-29 | 2022-03-25 | 广州国显科技有限公司 | 清洗装置 |
JP2022077172A (ja) * | 2020-11-11 | 2022-05-23 | 株式会社ディスコ | 研削装置 |
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JP3539787B2 (ja) * | 1995-03-09 | 2004-07-07 | 大日本スクリーン製造株式会社 | 回転式基板洗浄装置 |
KR0171491B1 (ko) * | 1994-09-20 | 1999-03-30 | 이시다 아키라 | 회전식 기판세정장치 |
JPH08238463A (ja) * | 1995-03-03 | 1996-09-17 | Ebara Corp | 洗浄方法及び洗浄装置 |
US5624501A (en) * | 1995-09-26 | 1997-04-29 | Gill, Jr.; Gerald L. | Apparatus for cleaning semiconductor wafers |
US5861066A (en) * | 1996-05-01 | 1999-01-19 | Ontrak Systems, Inc. | Method and apparatus for cleaning edges of contaminated substrates |
JPH10261605A (ja) * | 1997-03-18 | 1998-09-29 | Toshiba Corp | 半導体処理装置 |
JP3320640B2 (ja) * | 1997-07-23 | 2002-09-03 | 東京エレクトロン株式会社 | 洗浄装置 |
JP3314032B2 (ja) * | 1998-04-28 | 2002-08-12 | 東京エレクトロン株式会社 | 処理装置 |
JP4040759B2 (ja) * | 1998-07-29 | 2008-01-30 | 芝浦メカトロニクス株式会社 | 洗浄装置 |
US6248009B1 (en) * | 1999-02-18 | 2001-06-19 | Ebara Corporation | Apparatus for cleaning substrate |
US6622334B1 (en) * | 2000-03-29 | 2003-09-23 | International Business Machines Corporation | Wafer edge cleaning utilizing polish pad material |
JP4079205B2 (ja) * | 2000-08-29 | 2008-04-23 | 東京エレクトロン株式会社 | 基板洗浄装置及び基板洗浄方法 |
US6550091B1 (en) * | 2000-10-04 | 2003-04-22 | Lam Research Corporation | Double-sided wafer edge scrubbing apparatus and method for using the same |
US6647579B2 (en) * | 2000-12-18 | 2003-11-18 | International Business Machines Corp. | Brush pressure control system for chemical and mechanical treatment of semiconductor surfaces |
US6910240B1 (en) * | 2002-12-16 | 2005-06-28 | Lam Research Corporation | Wafer bevel edge cleaning system and apparatus |
-
2006
- 2006-03-30 JP JP2006095550A patent/JP2007273608A/ja not_active Abandoned
-
2007
- 2007-03-28 KR KR1020070030356A patent/KR100874997B1/ko active IP Right Grant
- 2007-03-30 TW TW096111284A patent/TW200805472A/zh unknown
- 2007-03-30 US US11/694,078 patent/US20070226925A1/en not_active Abandoned
- 2007-03-30 CN CN2007100919302A patent/CN101045230B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100874997B1 (ko) | 2008-12-19 |
JP2007273608A (ja) | 2007-10-18 |
TW200805472A (en) | 2008-01-16 |
US20070226925A1 (en) | 2007-10-04 |
CN101045230B (zh) | 2010-12-15 |
CN101045230A (zh) | 2007-10-03 |
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