KR20070012573A - 처리가스도입기구 및 플라즈마 처리장치 - Google Patents
처리가스도입기구 및 플라즈마 처리장치 Download PDFInfo
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- KR20070012573A KR20070012573A KR1020077001009A KR20077001009A KR20070012573A KR 20070012573 A KR20070012573 A KR 20070012573A KR 1020077001009 A KR1020077001009 A KR 1020077001009A KR 20077001009 A KR20077001009 A KR 20077001009A KR 20070012573 A KR20070012573 A KR 20070012573A
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- 238000012545 processing Methods 0.000 title claims abstract description 156
- 230000007246 mechanism Effects 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 56
- 230000008569 process Effects 0.000 title abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 276
- 210000002381 plasma Anatomy 0.000 description 183
- 235000012431 wafers Nutrition 0.000 description 110
- 239000004065 semiconductor Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 23
- 238000012423 maintenance Methods 0.000 description 19
- 238000009826 distribution Methods 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000003795 desorption Methods 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 208000027418 Wounds and injury Diseases 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- -1 polytetrafluoroethylene Polymers 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
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Abstract
Description
Claims (6)
- 피처리기판에 대하여 플라즈마 처리를 행하는 플라즈마처리장치에 있어서,피처리기판을 수용하는 챔버와,상기 챔버의 상방에 챔버와 연통하도록 마련된 유전체로 이루어지는 벨자 및 상기 벨자의 외측의 주위에 코일형상으로 권회되어 상기 벨자내에 유도 전계를 형성하는 안테나를 갖고, 상기 벨자의 내측으로 플라즈마를 발생시키는 플라즈마발생부와,상기 플라즈마발생부와 상기 챔버와의 사이에 마련되고, 상기 플라즈마발생부와 상기 챔버로 형성되는 처리공간에 플라즈마형성용의 처리가스를 도입하는 처리가스도입기구와,상기 챔버내에 마련된 피처리기판이 지지되는 탑재대와,유전체로 이루어져 상기 탑재대를 피복함과 동시에 상기 피처리기판이 탑재되는 마스크를 구비하고,상기 마스크는, 상기 피처리기판이 탑재되는 제1 영역과, 상기 제1 영역의 주위의 제2 영역이 동일한 높이로 구성되어 있는플라즈마 처리장치.
- 제 1 항에 있어서,상기 제2 영역에는, 상기 피처리기판을 상기 제1 영역의 위치에 위치결정하는 복수의 돌기가 설치되는플라즈마 처리장치.
- 제 1 항에 있어서,상기 제1 영역에는, 상기 피처리기판을 상기 탑재대로부터 부상시키기 위한 승강핀이 관통하는 복수의 핀 구멍과, 상기 핀 구멍에 연통하는 홈패턴이 마련되어 있는 것을 특징으로 하는플라즈마 처리장치.
- 제 1 항에 있어서,상기 벨자의 내경 D와, 상기 벨자의 중앙부의 내측측정높이 H와의 비 D/H로 표시되는 편평율 K가, 1.60~9.25인플라즈마 처리장치.
- 제 1 항에 있어서,상기 벨자의 내경 D와, 상기 벨자의 중앙부의 천장 부분과 상기 탑재대와의 거리 H1와의 비 D/H1로 표시되는 편평율 K1이, 0.90~3.85인 것을 특징으로 하는플라즈마 처리장치.
- 제 1 항에 있어서,상기 벨자는, 반경 R1이 1600mm∼2200mm인 천벽부와, 원통형의 측벽부와, 상기 천벽부와 상기 측벽부를 접속하는 반경 R2가 20mm∼40mm인 코너부로 이루어지는 다반경 돔형상을 나타내는플라즈마 처리 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003127201 | 2003-05-02 | ||
JPJP-P-2003-00127201 | 2003-05-02 | ||
JP2003180865 | 2003-06-25 | ||
JPJP-P-2003-00180865 | 2003-06-25 |
Related Parent Applications (1)
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KR1020057019954A Division KR100756095B1 (ko) | 2003-05-02 | 2004-04-28 | 처리가스도입기구 및 플라즈마처리장치 |
Publications (2)
Publication Number | Publication Date |
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KR20070012573A true KR20070012573A (ko) | 2007-01-25 |
KR100739890B1 KR100739890B1 (ko) | 2007-07-13 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020057019954A KR100756095B1 (ko) | 2003-05-02 | 2004-04-28 | 처리가스도입기구 및 플라즈마처리장치 |
KR1020077001004A KR100783829B1 (ko) | 2003-05-02 | 2004-04-28 | 처리가스도입기구 및 플라즈마처리장치 |
KR1020077001009A KR100739890B1 (ko) | 2003-05-02 | 2004-04-28 | 처리가스도입기구 및 플라즈마 처리장치 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020057019954A KR100756095B1 (ko) | 2003-05-02 | 2004-04-28 | 처리가스도입기구 및 플라즈마처리장치 |
KR1020077001004A KR100783829B1 (ko) | 2003-05-02 | 2004-04-28 | 처리가스도입기구 및 플라즈마처리장치 |
Country Status (4)
Country | Link |
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US (2) | US20060060141A1 (ko) |
JP (3) | JP4394073B2 (ko) |
KR (3) | KR100756095B1 (ko) |
WO (1) | WO2004097919A1 (ko) |
Families Citing this family (37)
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KR101149332B1 (ko) * | 2005-07-29 | 2012-05-23 | 주성엔지니어링(주) | 플라즈마 식각 장치 |
US7976671B2 (en) * | 2006-10-30 | 2011-07-12 | Applied Materials, Inc. | Mask etch plasma reactor with variable process gas distribution |
US20080193673A1 (en) * | 2006-12-05 | 2008-08-14 | Applied Materials, Inc. | Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
KR101329570B1 (ko) * | 2007-02-06 | 2013-11-22 | (주)소슬 | 막 형성 장치 |
KR101329569B1 (ko) * | 2007-02-06 | 2013-11-14 | 램 리써치 코포레이션 | 막 형성 장치 |
JP2010524225A (ja) | 2007-04-02 | 2010-07-15 | ソースル シーオー エルティディー | 基板支持装置及びこれを備えるプラズマエッチング装置 |
US20080289766A1 (en) * | 2007-05-22 | 2008-11-27 | Samsung Austin Semiconductor Lp | Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup |
JP4931716B2 (ja) * | 2007-07-18 | 2012-05-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ生成室 |
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KR101446455B1 (ko) | 2011-04-04 | 2014-10-01 | 캐논 아네르바 가부시키가이샤 | 처리 장치 |
US9245717B2 (en) | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
US8562785B2 (en) * | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
CN103426793B (zh) * | 2012-05-24 | 2016-02-03 | 沈阳芯源微电子设备有限公司 | 基板冷热处理装置 |
KR101495288B1 (ko) * | 2012-06-04 | 2015-02-24 | 피에스케이 주식회사 | 기판 처리 장치 및 방법 |
KR101546447B1 (ko) | 2014-03-20 | 2015-08-25 | 피에스케이 주식회사 | 배플 및 이를 포함하는 기판 처리 장치 |
JP6298373B2 (ja) * | 2014-07-11 | 2018-03-20 | 東京エレクトロン株式会社 | プラズマ処理装置および上部電極アセンブリ |
JP2016091654A (ja) * | 2014-10-30 | 2016-05-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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- 2004-04-28 KR KR1020077001004A patent/KR100783829B1/ko active IP Right Grant
- 2004-04-28 KR KR1020077001009A patent/KR100739890B1/ko active IP Right Grant
- 2004-04-28 WO PCT/JP2004/006165 patent/WO2004097919A1/ja active Application Filing
-
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- 2005-11-02 US US11/264,309 patent/US20060060141A1/en not_active Abandoned
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- 2009-06-23 US US12/457,834 patent/US8191505B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
KR20070012572A (ko) | 2007-01-25 |
US20060060141A1 (en) | 2006-03-23 |
KR100739890B1 (ko) | 2007-07-13 |
JPWO2004097919A1 (ja) | 2006-07-13 |
JP5279656B2 (ja) | 2013-09-04 |
WO2004097919A1 (ja) | 2004-11-11 |
JP4394073B2 (ja) | 2010-01-06 |
US8191505B2 (en) | 2012-06-05 |
US20090260762A1 (en) | 2009-10-22 |
JP2009283975A (ja) | 2009-12-03 |
KR20060003891A (ko) | 2006-01-11 |
KR100783829B1 (ko) | 2007-12-10 |
JP2009272657A (ja) | 2009-11-19 |
KR100756095B1 (ko) | 2007-09-05 |
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