TW202141620A - 清洗方法及半導體裝置之製造方法 - Google Patents

清洗方法及半導體裝置之製造方法 Download PDF

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TW202141620A
TW202141620A TW110108072A TW110108072A TW202141620A TW 202141620 A TW202141620 A TW 202141620A TW 110108072 A TW110108072 A TW 110108072A TW 110108072 A TW110108072 A TW 110108072A TW 202141620 A TW202141620 A TW 202141620A
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electrostatic chuck
plasma
cleaning method
gas
aforementioned
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中嶋孝一
千田智
千野悟
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日商東京威力科創股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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Abstract

[課題]提供一種「可一面抑制對靜電卡盤之表面的損傷，一面去除附著於靜電卡盤上之附著物」的技術。 [解決手段]本揭示之一態樣的清洗方法，係將靜電卡盤曝露於電漿，並將前述靜電卡盤之電位與前述電漿之電位的關係保持於電子電流從前述電漿朝向前述靜電卡盤流入的關係，藉此，清洗靜電卡盤。

Description

清洗方法及半導體裝置之製造方法
本揭示，係關於清洗方法及半導體裝置之製造方法。
已知如下述技術：使藉由電漿放電而產生之氬離子衝撞靜電卡盤，藉此，對附著於靜電卡盤上的污染物質進行電漿蝕刻(例如，參閱專利文獻1)。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2002-280365號公報
[本發明所欲解決之課題]
本揭示，係提供一種「可一面抑制對靜電卡盤之表面的損傷，一面去除附著於靜電卡盤上之附著物」的技術。 [用以解決課題之手段]
本揭示之一態樣的清洗方法，係將靜電卡盤曝露於電漿，並將前述靜電卡盤之電位與前述電漿之電位的關係保持於電子電流從前述電漿朝向前述靜電卡盤流入的關係，藉此，清洗靜電卡盤。 [發明之效果]
根據本揭示，可一面抑制對靜電卡盤之表面的損傷，一面去除附著於靜電卡盤上之附著物。
以下，參閱附加圖面，說明關於本揭示之非限定例示的實施形態。在附加的所有圖面中，針對相同或對應之構件或零件，係標註相同或對應的參考符號，並省略重複說明。
[成膜裝置] 參閱圖1，說明關於實施形態之成膜裝置的一例。圖1，係表示實施形態的成膜裝置之一例的概略圖。在以下的實施形態中，係將「成膜裝置為藉由電漿CVD (PECVD：Plasma-Enhanced Chemical Vapor Deposition)，在基板上形成鈦(Ti)膜之電漿CVD裝置」的情形加以例示而進行說明。
成膜裝置1，係具備有：處理室11，由被構成為氣密之大致圓筒狀的處理容器所構成。在處理室11內，係在藉由被設置於其中央的下部之大致圓筒狀的支撐構件13所支撐的狀態下，配置有用以水平地吸附保持基板之一例即半導體晶圓(以下稱為「晶圓W」。)的平台12。
平台12，係由氮化鋁(AlN)等的導電性陶瓷所形成。在平台12之外緣部，係設置有用以引導晶圓W的導引環14。
在平台12，係埋入有加熱器15。加熱器15，係藉由從加熱器電源40供電的方式，將晶圓W加熱至預定溫度。在本實施形態中，加熱器電源40，係包含有交流電源40a、閘流體40b及雜訊濾波器(NF)40c。
在平台12，係下部電極16被埋設於加熱器15上。在下部電極16，係連接有後述的卡盤控制機構70，平台12及下部電極16，係作為靜電卡盤而發揮功能。在本實施形態中，靜電卡盤，係強森‧瑞貝克型(JR型：Johnsen-Rahbek型)。
在處理室11之頂壁11A，係經由絕緣構件19設置有噴頭20。噴頭20，係包含有：上方的基座構件21；及噴淋板22，被安裝於基座構件21的下方。在基座構件21，係埋設有加熱噴頭20的加熱器23。加熱器23，係藉由從加熱器電源41供電的方式，將噴頭20加熱至預定溫度。
在噴淋板22，係形成有將氣體吐出至處理室11內的多數個吐出孔24。各吐出孔24，係與氣體擴散空間25連通，該氣體擴散空間25，係被形成於基座構件21與噴淋板22之間。在基座構件21之中央部，係設置有用以將處理氣體供給至氣體擴散空間25的氣體導入埠26。氣體導入埠26，係被連接於後述之氣體供給部30的混合氣體供給管線38。
氣體供給部30，係包含有：TiCl4 氣體供給源31，供給Ti化合物氣體即TiCl4 氣體；Ar氣體供給源32，供給Ar氣體；及H2 氣體供給源33，供給還原氣體即H2 氣體。
在TiCl4 氣體供給源31，係連接有TiCl4 氣體供給管線31L，在Ar氣體供給源32，係連接有Ar氣體供給管線32L，在H2 氣體供給源33，係連接有H2 氣體供給管線33L。在各氣體管線31L~33L，係分別設置有質流控制器(MFC)31C~33C及夾著質流控制器(MFC)31C~33C的2個閥31V~33V。
氣體混合部37，係具有將上述製程氣體混合而供給至噴頭20的功能。在氣體混合部37之氣體流入的側，係經由各氣體管線31L~33L連接有TiCl4 氣體供給源31、Ar氣體供給源32及H2 氣體供給源33。在氣體混合部37之氣體流出的側，係經由混合氣體供給管線38連接有噴頭20。
在製程時，從TiCl4 氣體、Ar氣體及H2 氣體中所選擇之一種類的氣體或複數個氣體的混合氣體，係經由噴頭20之氣體導入埠26與氣體擴散空間25，從複數個吐出孔24被導入至處理室11內。
如此一來，在本實施形態中，噴頭20，係雖由將製程氣體預先混合而供給至處理室11內之所謂的預混合型所構成，但亦可由將各製程氣體獨立地供給至處理室11內的後混合型所構成。
在噴頭20，係經由匹配器42連接有高頻電源43。在將製程氣體供給至處理室11內的狀態下，從高頻電源43將例如450kHz之高頻電力供給至噴頭20，藉此，在噴頭20與下部電極16之間生成電漿。如此一來，噴頭20，係作為與下部電極對向配置的上部電極而發揮功能。從可在後述之清洗處理中效率良好地將電子吸引至靜電卡盤側這樣的觀點來看，平台12的上面與噴淋板22的下面之間的距離(一對電極間的距離)，係80mm以下為較佳。另外，高頻電力，係並不限於450kHz，可適當地使用例如2MHz、13.56MHz、27MHz、60MHz、100MHz等。
在處理室11之底壁11B的中央部，係形成有圓形的開口17，在底壁11B，係以覆蓋開口17的方式，設置朝向下方突出的排氣室50。在排氣室50之側面，係連接有排氣配管51，在排氣配管51，係連接有排氣裝置52。排氣裝置52，係將處理室11內減壓至預定的真空壓力。
在平台12，係設置有複數根(例如3根)升降銷60，該升降銷60，係用以支撐晶圓W且使其升降，並可相對於平台12的表面突出/沒入。升降銷60，係被固定於支撐板61。升降銷60，係藉由氣缸等的驅動機構62，經由支撐板61而升降。在處理室11之側壁11C，係設置有：搬入搬出口18，用以進行晶圓W的搬入及搬出；及閘閥G，開關搬入搬出口18。
升降銷60，係在對處理室11搬入搬出晶圓W時進行升降。具體而言，在將晶圓W搬入處理室11內時，使升降銷60上升。而且，藉由搬送臂(未圖示)，將晶圓W從搬入搬出口18搬入並載置於升降銷60。其次，使升降銷60下降，將晶圓W載置於平台12上。又，在從處理室11搬出晶圓W時，使升降銷60上升來舉起晶圓W。而且，藉由搬送臂(未圖示)接收晶圓W，從搬入搬出口18搬出。
成膜裝置1，係具備有控制部90。控制部90，係控制成膜裝置1之各部的動作。控制部90，係例如電腦。控制部90，係具備有由程式、記憶體、CPU所構成的資料處理部等。在程式，係編入有命令(各步驟)，以便從控制部90將控制信號發送至成膜裝置1的各部，使其執行後述之靜電卡盤的清洗方法。程式，係被儲存於例如快閃記憶體、硬碟、光碟的記憶媒體並被安裝於控制部90。
[卡盤控制機構] 卡盤控制機構70，係與下部電極16電性連接。卡盤控制機構70，係包含有電源71、接地盒72、可變阻抗裝置73及電流感測器74。
電源71，係經由下部電極16對平台12施加陽極電壓。在本實施形態中，電源71，係高壓(HV：High Voltage)電源，經由下部電極16將例如400~600V的高電壓施加至平台12。將陽極電壓設定為例如400~600V，藉此，可將平台12之電位與電漿之電位的關係保持於電子電流從電漿朝向平台12流入的關係。又，電源71，係亦可包含有：RF濾波器(未圖示)，將從平台12側朝電源71流入的高頻電力阻斷。
接地盒72，係被設置於電源71與下部電極16之間。接地盒72，係被構成為可切換將下部電極16接地的狀態與不接地的狀態。在本實施形態中，接地盒72，係包含有開關72a及開關72b。開關72a，係切換電源71與下部電極16之電性連接的狀態。藉由使開關72a導通的方式，電源71與下部電極16被電性連接，藉由使開關72a斷開的方式，電源71與下部電極16之電性連接被阻斷。開關72b，係切換下部電極16之接地的狀態。藉由使開關72b導通的方式，下部電極16被接地。
可變阻抗裝置73，係被設置於電源71與接地盒72之間。可變阻抗裝置73，係調整平台12側的阻抗。在本實施形態中，可變阻抗裝置73，係包含有串聯的電容器73a及可變線圈73b，藉由調整可變線圈73b之電感的方式，調整平台12側的阻抗。又，可變阻抗裝置73，係包含有電流感測器73c。電流感測器73c，係例如CT(Current Transformer)方式電流感測器等的交流電流感測器。
電流感測器74，係檢測從下部電極16流向電源71的電流。換言之，電流感測器74，係檢測從電漿空間朝向靜電卡盤流入的電子電流。電流感測器74，係例如CT方式電流感測器等的交流電流感測器。
[半導體裝置之製造方法] 參閱圖2，說明關於包含實施形態之清洗方法的半導體裝置之製造方法的一例。圖2，係表示實施形態的半導體裝置之製造方法之一例的流程圖。另外，以下，係對在半導體裝置之製造方法的開始時，藉由排氣裝置52使處理室11內成為真空氛圍的情況進行說明。
首先，控制部90，係將晶圓W搬入處理室11內(步驟S1)。在本實施形態中，控制部90，係藉由搬送臂(未圖示)，將晶圓W搬入處理室11內，並將晶圓W收授至升降銷60且載置於平台12上。接著，控制部90，係關閉閘閥G。接著，控制部90，係控制排氣裝置52，將處理室11內減壓至預定壓力。又，控制部90，係控制交流電源40a及加熱器電源41，將平台12及噴頭20加熱至預定溫度。
接著，控制部90，係對被吸附保持於平台12上的晶圓W執行成膜處理(步驟S2)。在本實施形態中，控制部90，係控制氣體供給部30，將TiCl4 氣體及H2 氣體供給至處理室11內。又，控制部90，係控制電源71及接地盒72，將電壓施加至下部電極16，並且藉由高頻電源43，將預定頻率的高頻電力供給至噴頭20。藉此，晶圓W被吸附保持於平台12(靜電卡盤)上，在靜電卡盤與噴頭20之間生成電漿，TiCl4 氣體與H2 氣體反應而在晶圓W上形成Ti膜。
當成膜處理結束時，則將形成有Ti膜的晶圓W從處理室11內搬出(步驟S3)。在本實施形態中，控制部90，係控制接地盒72，將下部電極16接地，藉此，解除晶圓W相對於平台12的吸附。接著，控制部90，係打開閘閥G。接著，藉由搬送臂(未圖示)，搬出處理室11內的晶圓W。
在從處理室11內搬出晶圓W後，控制部90，係判定是否需要清洗靜電卡盤(步驟S4)。是否需要清洗靜電卡盤，係例如基於執行成膜處理的次數、時間來予以判定。
在步驟S4中，在被判定為不需要清洗靜電卡盤的情況下，控制部90，係使處理返回到步驟S1。亦即，控制部90，係不執行靜電卡盤之清洗處理，將下一個進行處理的晶圓W搬入處理室11內而執行成膜處理。
另一方面，在步驟S4中，當被判定為需要清洗靜電卡盤的情況下，控制部90，係對靜電卡盤執行清洗處理(清洗方法)(步驟S5)。清洗處理，係在靜電卡盤上無晶圓W的狀態下，將靜電卡盤曝露於電漿，並將靜電卡盤之電位與電漿之電位的關係保持於電子電流從電漿朝向靜電卡盤流入的關係，藉此，清洗靜電卡盤。在本實施形態中，控制部90，係將開關72a切換成導通，將開關72b切換成斷開，並控制電源71，對下部電極16施加例如400V~ 600V的陽極電壓。又，控制部90，係控制氣體供給部30，將Ar氣體供給至處理室11內，並且控制高頻電源43，將例如450kHz的高頻電力供給至噴頭20，以生成電漿。又，控制部90，係控制可變阻抗裝置73，調整靜電卡盤側之阻抗，藉此，使生成於對向配置之一對電極間的電漿穩定化。
如此一來，將靜電卡盤之電位與電漿之電位的關係保持於電子電流從電漿朝向靜電卡盤流入的關係，藉此，由於靜電卡盤之表面帶正(+)電，因此，電漿中所含有的電子會被吸引至靜電卡盤之表面。亦即，電子電流從電漿朝向靜電卡盤(下部電極16)流入。藉此，在靜電卡盤之表面發生電子的衝撞，附著於靜電卡盤上的附著物會被去除。此時，由於靜電卡盤之表面帶正電，因此，在靜電卡盤之表面難以發生高能量之陽離子(例如Ar+ )的衝撞。如此一來，可一面抑制高能量的陽離子衝撞靜電卡盤之表面，一面使低能量的電子選擇性地衝撞靜電卡盤之表面。其結果，可一面抑制對靜電卡盤之表面的損傷，一面去除附著於靜電卡盤上之附著物。
當清洗處理結束時，則控制部90使處理結束。
如以上所說明般，根據實施形態，將靜電卡盤曝露於電漿，並將靜電卡盤之電位與電漿之電位的關係保持於電子電流從電漿朝向靜電卡盤流入的關係。藉此，電子從電漿空間被吸引至靜電卡盤側且經吸引的電子衝撞靜電卡盤之表面，藉此，可去除附著於靜電卡盤上的附著物。如此一來，根據實施形態，由於主要是利用電子衝撞靜電卡盤之表面，因此，與利用陽離子(例如Ar+ )之衝撞相比，對靜電卡盤之表面的損傷較少。例如，在利用陽離子之衝撞的情況下，係藉由陽離子之衝撞，蝕刻靜電卡盤的介電層最表面(例如，燒結助劑)而容易產生微粒等的雜質。
又，根據實施形態，由於可使用電漿來去除附著於靜電卡盤上的附著物，因此，可降低從成膜裝置1拆卸靜電卡盤所進行之靜電卡盤的再生(修理)之頻率，從而提升生產率。
又，根據實施形態，在一對電極間的距離為80mm以下之比較狹窄的空間生成電漿，藉由該電漿，對靜電卡盤執行清洗處理。藉此，由於可效率良好地將電子吸引至靜電卡盤側，因此，可提高去除靜電卡盤上之附著物的能力。
又，根據實施形態，可使用被連接於靜電卡盤之可變阻抗裝置來調整靜電卡盤的阻抗。藉此，即便在使施加至下部電極16之陽極電壓變化的情況下，由於亦可調整靜電卡盤側的阻抗，因此，可生成穩定的電漿。
[實施例] 在實施例中，係在前述成膜裝置1中，對表面附著有附著物的靜電卡盤執行前述清洗處理。又，在清洗處理之前或之後，測定靜電卡盤的表面電阻。另外，清洗處理之條件及表面電阻之測定條件，係如以下般。
(清洗處理之條件) 一對電極間的距離：10~50mm 高頻電源43的輸出：450kHz、500W 電源71的輸出：500V 處理室11內的壓力：5Torr(667Pa) 處理時間：60秒×10循環 (表面電阻之測定條件) 施加電壓：1000V
在以下的表1中，表示比較了清洗處理之前後的靜電卡盤之表面電阻的結果。另外，在表1中，測定位置，係意味著靜電卡盤之面內的不同位置。
Figure 02_image001
如表1所示般，可知：執行清洗處理之前的靜電卡盤之表面電阻為2.8MΩ~132MΩ，相對於此，執行清洗處理後的靜電卡盤之表面電阻為測定上限值(2TΩ)以上。從其結果，吾人認為，藉由對靜電卡盤執行前述清洗處理的方式，靜電卡盤上的附著物會被去除且靜電卡盤之表面電阻變高。
本次所揭示之實施形態，係在所有方面皆為例示，吾人應瞭解該等例示並非用以限制本發明。上述之實施形態，係亦可在不脫離添附之申請專利範圍及其主旨的情況下，以各種形態進行省略、置換、變更。
12:平台 16:下部電極 20:噴頭 73:可變阻抗裝置 W:晶圓
[圖1]表示實施形態的成膜裝置之一例的概略圖。 [圖2]表示實施形態的半導體裝置之製造方法之一例的流程圖。
1:成膜裝置
11:處理室
11A:頂壁
11B:底壁
11C:側壁
12:平台
13:支撐構件
14:導引環
15:加熱器
16:下部電極
17:開口
18:搬入搬出口
19:絕緣構件
20:噴頭
21:基座構件
22:噴淋板
23:加熱器
24:吐出孔
25:氣體擴散空間
26:氣體導入埠
30:氣體供給部
31:TiCl4氣體供給源
31C:質流控制器
31L:TiCl4氣體供給管線
31V:閥
32:Ar氣體供給源
32C:質流控制器
32L:Ar氣體供給管線
32V:閥
33:H2氣體供給源
33C:質流控制器
33L:H2氣體供給管線
33V:閥
37:氣體混合部
38:混合氣體供給管線
40:加熱器電源
40a:交流電源
40b:閘流體
40c:雜訊濾波器
41:加熱器電源
42:匹配器
43:高頻電源
50:排氣室
51:排氣配管
52:排氣裝置
60:升降銷
61:支撐板
62:驅動機構
70:卡盤控制機構
71:電源
72:接地盒
72a:開關
72b:開關
73:可變阻抗裝置
73a:電容器
73b:可變線圈
73c:電流感測器
74:電流感測器
90:控制部
G:閘閥
W:晶圓

Claims (9)

  1. 一種清洗方法，其特徵係， 將靜電卡盤曝露於電漿，並將前述靜電卡盤之電位與前述電漿之電位的關係保持於電子電流從前述電漿朝向前述靜電卡盤流入的關係，藉此，清洗靜電卡盤。
  2. 如請求項1之清洗方法，其中， 前述靜電卡盤，係強森‧瑞貝克型。
  3. 如請求項1或2之清洗方法，其中， 前述電漿，係被形成於對向配置之一對電極間。
  4. 如請求項3之清洗方法，其中， 前述一對電極間之距離，係80mm以下。
  5. 如請求項3或4之清洗方法，其中， 將高頻電力施加至前述一對電極的一方，並將陽極電壓施加至另一方。
  6. 如請求項1~5中任一項之清洗方法，其中， 在前述靜電卡盤上無基板的狀態下執行。
  7. 如請求項1~6中任一項之清洗方法，其中， 在前述靜電卡盤，係連接有調整阻抗的可變阻抗裝置。
  8. 如請求項1~7中任一項之清洗方法，其中， 基於朝向前述靜電卡盤流入的電子電流，控制陽極電壓。
  9. 一種半導體裝置之製造方法，係具有：將基板吸附保持於靜電卡盤而進行成膜的工程；及在前述靜電卡盤上無基板的狀態下，將前述靜電卡盤曝露於電漿的工程，該半導體裝置之製造方法，其特徵係， 前述曝露於電漿的工程，係包含如下述步驟：將前述靜電卡盤之電位與前述電漿之電位的關係保持於電子電流從前述電漿朝向前述靜電卡盤流入的關係。
TW110108072A 2020-03-17 2021-03-08 清洗方法及半導體裝置之製造方法 TW202141620A (zh)

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