JP7482657B2 - クリーニング方法及び半導体装置の製造方法 - Google Patents
クリーニング方法及び半導体装置の製造方法 Download PDFInfo
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- JP7482657B2 JP7482657B2 JP2020046448A JP2020046448A JP7482657B2 JP 7482657 B2 JP7482657 B2 JP 7482657B2 JP 2020046448 A JP2020046448 A JP 2020046448A JP 2020046448 A JP2020046448 A JP 2020046448A JP 7482657 B2 JP7482657 B2 JP 7482657B2
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- 238000000034 method Methods 0.000 title claims description 42
- 238000004140 cleaning Methods 0.000 title claims description 35
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 54
- 229910003074 TiCl4 Inorganic materials 0.000 description 6
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Description
図1を参照し、実施形態の成膜装置の一例について説明する。図1は、実施形態の成膜装置の一例を示す概略図である。以下の実施形態では、成膜装置がプラズマCVD(PECVD:Plasma-Enhanced Chemical Vapor Deposition)によって基板上にチタン(Ti)膜を形成するプラズマCVD装置である場合を例示して説明する。
チャック制御機構70は、下部電極16と電気的に接続されている。チャック制御機構70は、電源71、接地箱72、可変インピーダンス装置73及び電流センサ74を含む。
図2を参照し、実施形態のクリーニング方法を含む半導体装置の製造方法の一例について説明する。図2は、実施形態の半導体装置の製造方法の一例を示すフローチャートである。なお、以下では、半導体装置の製造方法の開始時において、処理室11内が排気装置52により真空雰囲気とされているものとして説明する。
実施例では、前述の成膜装置1において、表面に付着物が付着した静電チャックに対して前述のクリーニング処理を実行した。また、クリーニング処理の前及び後に静電チャックの表面抵抗を測定した。なお、クリーニング処理の条件及び表面抵抗の測定条件は以下である。
一対の電極間の距離:10~50mm
高周波電源43の出力:450kHz、500W
電源71の出力:500V
処理室11内の圧力:5Torr(667Pa)
処理時間:60秒×10サイクル
(表面抵抗の測定条件)
印加電圧:1000V
16 下部電極
20 シャワーヘッド
73 可変インピーダンス装置
W ウエハ
Claims (7)
- 静電チャックをプラズマに曝し、前記静電チャックの電位と前記プラズマの電位の関係を、前記プラズマから前記静電チャックに向けて電子電流が流れ込む関係に保つことにより、静電チャックをクリーニングする工程を有し、
前記プラズマは、対向配置される一対の電極間に形成され、
前記一対の電極は、前記静電チャック内の第1電極と、前記静電チャックに対向する第2電極とからなり、
前記第1電極と前記第2電極との間の距離は、80mm以下であり、
前記クリーニングする工程は、前記第1電極に400~600Vの陽極電圧を印加することを含む、
クリーニング方法。 - 前記静電チャックは、ジョンソン・ラーベック型である、
請求項1に記載のクリーニング方法。 - 前記クリーニングする工程は、前記第2電極に高周波電力を印加することを含む、
請求項1又は2に記載のクリーニング方法。 - 前記静電チャックの上に基板がない状態で実行される、
請求項1乃至3のいずれか一項に記載のクリーニング方法。 - 前記静電チャックには、インピーダンスを調整する可変インピーダンス装置が接続されている、
請求項1乃至4のいずれか一項に記載のクリーニング方法。 - 前記静電チャックに向けて流れ込む電子電流に基づいて前記陽極電圧を制御する、
請求項1乃至5のいずれか一項に記載のクリーニング方法。 - 静電チャックに基板を吸着保持して成膜を行う工程と、
前記静電チャックの上に基板がない状態で前記静電チャックをプラズマに曝す工程と、
を有する半導体装置の製造方法であって、
前記プラズマに曝す工程は、前記静電チャックの電位と前記プラズマの電位との関係を、前記プラズマから前記静電チャックに向けて電子電流が流れ込む関係に保つステップを含み、
前記プラズマは、対向配置される一対の電極間に形成され、
前記一対の電極は、前記静電チャック内の第1電極と、前記静電チャックに対向する第2電極とからなり、
前記第1電極と前記第2電極との間の距離は、80mm以下であり、
前記プラズマに曝す工程は、前記第1電極に400~600Vの陽極電圧を印加することを含む、
半導体装置の製造方法。
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JP2017188648A (ja) | 2016-03-30 | 2017-10-12 | 住友大阪セメント株式会社 | 静電チャック部材、静電チャック装置 |
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