CN115244214A - 清洁方法和半导体装置的制造方法 - Google Patents

清洁方法和半导体装置的制造方法 Download PDF

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CN115244214A
CN115244214A CN202180019248.0A CN202180019248A CN115244214A CN 115244214 A CN115244214 A CN 115244214A CN 202180019248 A CN202180019248 A CN 202180019248A CN 115244214 A CN115244214 A CN 115244214A
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electrostatic chuck
plasma
cleaning
gas
cleaning method
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中岛孝一
千田智
千野悟
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Tokyo Electron Ltd
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Abstract

关于本公开的一个方式的清洁方法，通过将静电吸盘暴露于等离子体，并将所述静电吸盘的电位与所述等离子体的电位的关系保持为电子电流从所述等离子体朝向所述静电吸盘流入的关系，来清洁静电吸盘。

Description

清洁方法和半导体装置的制造方法
技术领域
本公开涉及一种清洁方法和半导体装置的制造方法。
背景技术
已知如下的技术：通过使由等离子体放电产生的氩离子与静电吸盘碰撞，来对附着于静电吸盘上的污染物质进行等离子体蚀刻(例如参照专利文献1)。
现有技术文献
专利文献
专利文献1：日本特开2002-280365号公报
发明内容
发明要解决的问题
本公开提供一种能够抑制对静电吸盘的表面造成的损伤，并且去除附着于静电吸盘上的附着物的技术。
用于解决问题的方案
关于本公开的一个方式的清洁方法，通过将静电吸盘暴露于等离子体，并将所述静电吸盘的电位与所述等离子体的电位的关系保持为电子电流从所述等离子体朝向所述静电吸盘流入的关系，来清洁静电吸盘。
发明的效果
根据本公开，能够抑制对静电吸盘的表面造成的损伤，并且去除附着于静电吸盘上的附着物。
附图说明
图1是示出实施方式的成膜装置的一例的概要图。
图2是示出实施方式的半导体装置的制造方法的一例的流程图。
具体实施方式
下面，参照附图来说明本公开的非限定性的例示的实施方式。在所有附图中，对相同或对应的构件或部件标注相同或对应的参照附图标记，并且省略重复的说明。
〔成膜装置〕
参照图1来说明实施方式的成膜装置的一例。图1是示出实施方式的成膜装置的一例的概要图。在以下的实施方式中，例示并说明成膜装置是通过等离子体CVD(PECVD：Plasma-Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积)来在基板上形成钛(Ti)膜的等离子体CVD装置的情况。
成膜装置1具备由处理容器构成的处理室11，该处理容器是气密地构成的大致圆筒状的容器。在处理室11内，用于水平地吸附保持作为基板的一例的半导体晶圆(以下称为“晶圆W”。)的载物台12以被设置于其中央的下部的大致圆筒状的支承构件13支承的状态配置。
载物台12由氮化铝(AlN)等导电性陶瓷形成。在载物台12的外缘部设置有用于引导晶圆W的引导环14。
在载物台12嵌入有加热器15。加热器15通过被从加热器电源40供电来将晶圆W加热到规定的温度。在本实施方式中，加热器电源40包括交流电源40a、晶闸管40b以及噪声滤波器(NF)40c。
在载物台12中，下部电极16埋设在加热器15上。下部电极16与后述的吸盘控制机构70连接，载物台12及下部电极16作为静电吸盘来发挥功能。在本实施方式中，静电吸盘是约翰逊-拉别克型(JR型：Johnsen-Rahbek型)。
在处理室11的顶壁11A隔着绝缘构件19设置有喷淋头20。喷淋头20包括上方的基座构件21以及安装于基座构件21的下方的喷淋板22。在基座构件21埋设有用于加热喷淋头20的加热器23。加热器23通过被从加热器电源41供电来将喷淋头20加热到规定的温度。
在喷淋板22形成有多个向处理室11内喷出气体的喷出孔24。各喷出孔24与气体扩散空间25连通，该气体扩散空间25形成于基座构件21与喷淋板22之间。在基座构件21的中央部设置有用于向气体扩散空间25供给处理气体的气体导入口26。气体导入口26与后述的气体供给部30的混合气体供给管线38连接。
气体供给部30包括供给作为Ti化合物气体的TiCl4气体的TiCl4气体供给源31、供给Ar气体的Ar气体供给源32以及供给作为还原气体的H2气体的H2气体供给源33。
TiCl4气体供给源31与TiCl4气体供给管线31L连接，Ar气体供给源32与Ar气体供给管线32L连接，H2气体供给源33与H2气体供给管线33L连接。在气体管线31L设置有质量流量控制器(MFC)31C以及将质量流量控制器31C夹在中间的2个阀31V，在气体管线32L设置有质量流量控制器(MFC)32C以及将质量流量控制器32C夹在中间的2个阀32V，在气体管线33L设置有质量流量控制器(MFC)33C以及将质量流量控制器33C夹在中间的2个阀33V。
气体混合部37具有将上述的处理气体混合后供给到喷头20的功能。气体混合部37中的气体流入侧经由各气体管线31L～33L来与TiCl4气体供给源31、Ar气体供给源32以及H2气体供给源33连接。气体混合部37中的气体流出侧经由混合气体供给管线38来与喷淋头20连接。
在进行处理时，将从TiCl4气体、Ar气体以及H2气体中选择出的一种气体或者多种气体的混合气体经由喷淋头20的气体导入口26和气体扩散空间25从多个喷出孔24导入到处理室11内。
这样，在本实施方式中，喷淋头20以将处理气体预先混合后供给到处理室11内的所谓的预混合型构成，但也可以以将各处理气体独立地供给到处理室11内的后混合(postmix)型。
喷淋头20经由匹配器42来与高频电源43连接。在将处理气体供给到处理室11内的状态下，通过从高频电源43向喷淋头20供给例如450kHz的高频电力，来在喷淋头20与下部电极16之间生成等离子体。这样，喷淋头20作为与下部电极相向配置的上部电极来发挥功能。从能够在后述的清洁处理中高效地将电子吸引到静电吸盘侧的观点出发，载物台12的上表面与喷淋板22的下表面之间的距离(一对电极间的距离)优选的是80mm以下。此外，高频电力不限于450kHz，例如能够适当使用2MHz、13.56MHz、27MHz、60MHz、100MHz等。
在处理室11的底壁11B的中央部形成有圆形的开口17，在底壁11B以覆盖开口17的方式设置有朝向下方突出的排气室50。排气室50的侧面与排气配管51连接，排气配管51与排气装置52连接。排气装置52使处理室11内减压至规定的真空压力。
在载物台12以能够相对于载物台12的表面突出或退回的方式设置有用于支承晶圆W并使其升降的多根(例如3根)升降销60。升降销60固定于支承板61。利用气缸等驱动机构62借助支承板61来使升降销60升降。在处理室11的侧壁11C设置有用于进行晶圆W的搬入及搬出的搬入搬出口18以及对搬入搬出口18进行开闭的闸阀G。
在将晶圆W相对于处理室11进行搬入或搬出时，使升降销60进行升降。具体地说，在将晶圆W向处理室11内搬入时，使升降销60上升。然后，利用搬送臂(未图示)将晶圆W从搬入搬出口18搬入并载置于升降销60。接着，使升降销60下降来将晶圆W载置于载物台12上。另外，在将晶圆W从处理室11搬出时，使升降销60上升来抬起晶圆W。然后，利用搬送臂(未图示)接收晶圆W，并将其从搬入搬出口18搬出。
成膜装置1具有控制部90。控制部90控制成膜装置1的各部的动作。控制部90例如是计算机。控制部90具备程序、存储器以及由CPU构成的数据处理部等。程序中编入有命令(各步骤)，使得从控制部90向成膜装置1的各部发送控制信号，执行后述的静电吸盘的清洁方法。程序例如保存于闪存、硬盘、光盘等存储介质并安装于控制部90。
〔吸盘控制机构〕
吸盘控制机构70与下部电极16电连接。吸盘控制机构70包括电源71、接地箱72、可变阻抗装置73以及电流传感器74。
电源71经由下部电极16向载物台12施加阳极电压。在本实施方式中，电源71是高压(HV：High Voltage)电源，经由下部电极16向载物台12施加例如400V～600V的高电压。能够通过将阳极电压例如设定为400V～600V，来将载物台12的电位与等离子体的电位的关系保持为电子电流从等离子体朝向载物台12流入的关系。另外，电源71也可以包括用于切断从载物台12侧向电源71流入的高频电力的RF滤波器(未图示)。
接地箱72设置于电源71与下部电极16之间。接地箱72构成为能够在使下部电极16接地的状态与使下部电极16不接地的状态之间切换。在本实施方式中，接地箱72包括开关72a和开关72b。开关72a对电源71与下部电极16的电连接的状态进行切换。通过使开关72a接通来将电源71与下部电极16电连接，通过使开关72a断开来切断电源71与下部电极16的电连接。开关72b对下部电极16的接地的状态进行切换。通过使开关72b接通来使下部电极16接地。
可变阻抗装置73设置于电源71与接地箱72之间。可变阻抗装置73用于调整载物台12侧的阻抗。在本实施方式中，可变阻抗装置73包括串联连接的电容73a与可变线圈73b，通过调整可变线圈73b的电感来调整载物台12侧的阻抗。另外，可变阻抗装置73包括电流传感器73c。电流传感器73c例如是CT(Current Transformer：电流互感器)方式电流传感器等交流电流传感器。
电流传感器74检测从下部电极16朝向电源71流动的电流。换言之，电流传感器74检测从等离子体空间朝向静电吸盘流入的电子电流。电流传感器74例如是CT方式电流传感器等交流电流传感器。
〔半导体装置的制造方法〕
参照图2来说明实施方式的包含清洁方法的半导体装置的制造方法的一例。图2是示出实施方式的半导体装置的制造方法的一例的流程图。此外，在以下说明为在半导体装置的制造方法开始时利用排气装置52使处理室11内为真空环境的情况。
首先，控制部90向处理室11内搬入晶圆W(步骤S1)。在本实施方式中，控制部90利用搬送臂(未图示)向处理室11内搬入晶圆W，将晶圆W交接到升降销60，并载置于载物台12上。接着，控制部90关闭闸阀G。接着，控制部90控制排气装置52来将处理室11内减压到规定的压力。另外，控制部90控制交流电源40a及加热器电源41来将载物台12及喷淋头20加热到规定的温度。
接着，控制部90对吸附保持于载物台12上的晶圆W执行成膜处理(步骤S2)。在本实施方式中，控制部90控制气体供给部30来向处理室11内供给TiCl4气体及H2气体。另外，控制部90控制电源71及接地箱72来向下部电极16施加电压，并且利用高频电源43向喷淋头20供给规定的频率的高频电力。由此，晶圆W被吸附保持于载物台12(静电吸盘)上，并且在静电吸盘与喷淋头20之间生成有等离子体，TiCl4气体与H2气体反应而在晶圆W上形成Ti膜。
当成膜处理结束时，控制部90将形成有Ti膜的晶圆W从处理室11内搬出(步骤S3)。在本实施方式中，控制部90控制接地箱72来使下部电极16接地，由此解除晶圆W向载物台12的吸附。接着，控制部90打开闸阀G。接着，利用搬送臂(未图示)将处理室11内的晶圆W搬出。
在从处理室11内搬出晶圆W之后，控制部90判定是否需要进行静电吸盘的清洁(步骤S4)。例如，基于执行成膜处理的次数、时间来判定是否需要进行静电吸盘的清洁。
当在步骤S4中判定为不需要进行静电吸盘的清洁的情况下，控制部90使处理返回到步骤S1。即，控制部90不执行静电吸盘的清洁处理而将接下来要处理的晶圆W搬入到处理室11内，执行成膜处理。
另一方面，当在步骤S4中判定为需要进行静电吸盘的清洁的情况下，控制部90对静电吸盘执行清洁处理(清洁方法)(步骤S5)。在清洁处理中，在静电吸盘上没有晶圆W的状态下，通过将静电吸盘暴露于等离子体，并将静电吸盘的电位与等离子体的电位的关系保持为电子电流从等离子体朝向静电吸盘流入的关系，来清洁静电吸盘。在本实施方式中，控制部90将开关72a切换为接通，将开关72b切换为断开，并控制电源71来向下部电极16施加例如400V～600V的阳极电压。另外，控制部90控制气体供给部30来向处理室11内供给Ar气体，并且控制高频电源43来向喷淋头20供给例如450kH的高频电力以生成等离子体。另外，控制部90控制可变阻抗装置73来调整静电吸盘侧的阻抗，由此使生成在相向配置的一对电极之间的等离子体稳定化。
这样，通过将静电吸盘的电位与等离子体的电位的关系保持为电子电流从等离子体朝向静电吸盘流入的关系，来使静电吸盘的表面带正(+)电，因此等离子体所包含的电子被吸引到静电吸盘的表面。即，电子电流从等离子体朝向静电吸盘(下部电极16)流入。由此，在静电吸盘的表面发生电子的碰撞，附着于静电吸盘上的附着物被去除。此时，由于静电吸盘的表面带正电，因此在静电吸盘的表面难以发生高能量的阳离子(例如Ar+)的碰撞。这样，能够在抑制高能量的阳离子与静电吸盘的表面碰撞并且选择性地使低能量的电子与静电吸盘的表面碰撞。其结果，能够抑制对静电吸盘的表面造成的损伤并且去除附着于静电吸盘上的附着物。
当清洁处理结束时，控制部90使处理结束。
如以上所说明的那样，根据实施方式，将静电吸盘暴露于等离子体，并将静电吸盘的电位与等离子体的电位的关系保持为电子电流从等离子体朝向静电吸盘流入的关系。由此，电子被从等离子体空间吸引到静电吸盘侧，通过所吸引的电子与静电吸盘的表面碰撞，能够去除附着于静电吸盘上的附着物。像这样根据实施方式，由于主要利用电子对静电吸盘的表面的碰撞，因此相比于利用阳离子(例如Ar+)的碰撞的情况而言，对静电吸盘的表面的损伤少。例如，在利用阳离子的碰撞的情况下，静电吸盘的介电层最表面(例如烧结助剂)由于阳离子的冲击而被蚀刻，容易产生微粒等杂质。
另外，根据实施方式，由于能够使用等离子体来去除附着于静电吸盘上的附着物，因此能够降低将静电吸盘从成膜装置1拆下后进行的静电吸盘的再生(修复)的频率，从而使生产率提高。
另外，根据实施方式，在一对电极间的距离为80mm以下的较窄的空间生成等离子体，并利用等离子体对静电吸盘执行清洁处理。由此，能够高效地将电子吸引到静电吸盘侧，因此去除静电吸盘上的附着物的能力提高。
另外，根据实施方式，能够使用与静电吸盘连接的可变阻抗装置来调整静电吸盘的阻抗。由此，即使在使施加于下部电极16的阳极电压发生了变化的情况下，也能够调整静电吸盘侧的阻抗，因此能够生成稳定的等离子体。
〔实施例〕
在实施例中，在前述的成膜装置1中对表面附着有附着物的静电吸盘执行了前述的清洁处理。另外，在清洁处理之前以及清洁处理之后测定了静电吸盘的表面电阻。此外，清洁处理的条件及表面电阻的测定条件如下所述。
(清洁处理的条件)
一对电极间的距离：10mm～50mm
高频电源43的输出：450kHz、500W
电源71的输出：500V
处理室11内的压力：5Torr(667Pa)
处理时间：60秒×10个循环
(表面电阻的测定条件)
施加电压：1000V
在以下的表1中示出对清洁处理前后的静电吸盘的表面电阻进行比较而得到的结果。此外，在表1中，测定位置是指静电吸盘的面内的不同的位置。
[表1]
测定位置 清洁处理前 清洁处理后
1 77.9M 2T
2 44.0M 2T
3 25.8M 2T
4 9.3M 2T
5 2.8M 2T
6 8.15M 2T
7 24.6M 2T
8 65.7M 2T
9 42.9M 2T
10 22.3M 2T
11 44.0M 2T
12 13.4M 2T
13 18.0M 2T
14 23.9M 2T
15 39.5M 2T
16 9.8M 2T
17 10.6M 2T
18 132M 2T
19 5.71M 2T
如表1所示，可知：执行清洁处理之前的静电吸盘的表面电阻为2.8MΩ～132MΩ，与此相对地，执行清洁处理之后的静电吸盘的表面电阻为测定上限值(2TΩ)以上。根据该结果，能够认为通过对静电吸盘执行前述的清洁处理，能够去除静电吸盘上的附着物，从而静电吸盘的表面电阻变高。
应当认为本次公开的实施方式在所有方面均为例示而非限制性的。上述的实施方式也可以不脱离所附的权利要求书及其主旨地以各种方式进行省略、置换、变更。
本国际申请要求以2020年3月17日申请的日本特愿第2020-046448号为基础的优先权，在本国际申请中引用该申请的全部内容。
附图标记说明
12：载物台；16：下部电极；20：喷淋头；73：可变阻抗装置；W：晶圆。

Claims (9)

1.一种清洁方法，
通过将静电吸盘暴露于等离子体，并将所述静电吸盘的电位与所述等离子体的电位的关系保持为电子电流从所述等离子体朝向所述静电吸盘流入的关系，来清洁静电吸盘。
2.根据权利要求1所述的清洁方法，其中，
所述静电吸盘是约翰逊-拉别克型。
3.根据权利要求1或2所述的清洁方法，其中，
所述等离子体形成于相向配置的一对电极之间。
4.根据权利要求3所述的清洁方法，其中，
所述一对电极间的距离为80mm以下。
5.根据权利要求3或4所述的清洁方法，其中，
向所述一对电极中的一方施加高频电力，向另一方施加阳极电压。
6.根据权利要求1～5中的任一项所述的清洁方法，其中，
所述清洁方法在所述静电吸盘上没有基板的状态下执行。
7.根据权利要求1～6中的任一项所述的清洁方法，其中，
所述静电吸盘与用于调整阻抗的可变阻抗装置连接。
8.根据权利要求1～7中的任一项所述的清洁方法，其中，
基于朝向所述静电吸盘流入的电子电流来控制阳极电压。
9.一种半导体装置的制造方法，包括以下工序：
将基板吸附保持于静电吸盘来进行成膜；以及
在所述静电吸盘上没有基板的状态下将所述静电吸盘暴露于等离子体，
其中，暴露于所述等离子体的工序包括如下步骤：将所述静电吸盘的电位与所述等离子体的电位的关系保持为电子电流从所述等离子体朝向所述静电吸盘流入的关系。
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