KR20060134734A - 박막트랜지스터 및 이를 이용한 유기전계발광표시장치의제조방법 - Google Patents
박막트랜지스터 및 이를 이용한 유기전계발광표시장치의제조방법 Download PDFInfo
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Abstract
Description
Claims (18)
- 제 1 TFT 영역과 제 2 TFT 영역을 갖는 기판을 제공하는 단계;상기 기판 상에 게이트 전극을 형성하는 단계;상기 게이트 전극을 포함한 기판 전면 상에 게이트 절연막을 형성하는 단계;상기 게이트 절연막의 소정 영역 상에 마스크를 이용해서 반도체층을 형성하는 단계;상기 게이트 전극을 이용해서 상기 마스크를 배면 노광하는 단계;상기 배면 노광된 마스크를 이용해서 상기 제 1 및 제 2 TFT 영역의 반도체층에 n형 불순물 이온을 주입하여 채널 영역 및 소오스/드레인 영역을 형성하는 단계;상기 배면 노광된 마스크의 양측면을 에싱하는 단계;상기 에싱된 마스크를 이용해서, 상기 제 1 및 제 2 TFT 영역의 반도체층에 저농도 불순물 이온을 주입하여 LDD 영역을 형성하는 단계; 및상기 제 2 TFT 영역의 반도체층에 p형 불순물 이온을 주입하여 소오스/드레인 영역을 형성하는 단계;를 포함하는 것을 특징으로 하는 CMOS 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 게이트 전극 물질은 텅스텐몰리브덴(MoW), 몰리브덴(Mo), 텅스텐(W), 텅스텐 실리사이드(WSi2), 몰리브데늄 실리사이드(MoSi2) 및 알루미늄(Al)으로 이루어진 군에서 선택되는 어느 하나로 형성되는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 에싱은 상기 배면 노광된 마스크의 임계 치수의 손실이 0.3 내지 1㎛가 되도록 수행하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 n형 불순물 이온은 인(P), 비소(As), 안티몬(Sb) 및 비스무스(Bi)로 이루어진 군에서 선택되는 어느 하나인 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 p형 불순물 이온은 붕소(B), 알루미늄(Al), 갈륨(Ga) 및 인듐(In)으로 이루어진 군에서 선택되는 어느 하나인 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 1 항에 있어서,상기 p형 불순물 이온의 도즈는 n형 불순물 이온의 도즈보다 높은 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 매트릭스 형태로 배치된 복수의 신호선들의 교차에 의해 단위화소영역들이 정의되는 유기전계발광표시장치의 제조방법에 있어서,제 1 및 제 2 TFT 영역, 화소 영역 및 배선 영역을 갖는 기판을 제공하는 단계;상기 제 1 및 제 2 TFT 영역의 기판 상에 게이트 전극을 형성함과 동시에 상기 배선 영역 상에 신호선들을 형성하는 단계;상기 게이트 전극 및 상기 신호선들을 포함한 기판 전면 상에 게이트 절연막을 형성하는 단계;상기 제 1 TFT 영역의 게이트 절연막 상에 LDD 영역, 채널 영역 및 n형 불순물 이온이 주입된 소오스/드레인 영역을 갖는 반도체층을 형성하는 단계;상기 제 2 TFT 영역의 게이트 절연막 상에 채널 영역 및 p형 불순물 이온이 주입된 소오스/드레인 영역을 갖는 반도체층을 형성하는 단계;상기 반도체층을 포함한 기판 결과물 상에 절연막을 형성하는 단계;상기 절연막 내에 상기 소오스/드레인 영역들 및 상기 신호선들의 일부를 노출시키는 콘택홀들을 형성하는 단계; 및상기 콘택홀들을 통하여 상기 화소 영역 상에 상기 제 2 TFT 영역의 소오스/드레인 영역의 일단과 연결되는 제 1 전극을 형성함과 동시에, 상기 제 2 TFT 영역 의 소오스/드레인 영역의 타단과 상기 제 1 TFT 영역의 소오스/드레인 영역의 일단과 연결되는 제 1 소오스/드레인 전극 및 상기 제 1 TFT 영역의 소오스/드레인 영역의 타단과 상기 신호선들 중 어느 하나에 연결되는 제 2 소오스/드레인 전극을 형성하는 단계;를 포함하는 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 7 항에 있어서,상기 게이트 전극 물질은 텅스텐몰리브덴(MoW), 몰리브덴(Mo), 텅스텐(W), 텅스텐 실리사이드(WSi2), 몰리브데늄 실리사이드(MoSi2) 및 알루미늄(Al)으로 이루어진 군에서 선택되는 어느 하나로 형성되는 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 7 항에 있어서,상기 신호선들은 상기 게이트 전극 물질과 동일한 물질로 형성되는 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 7 항에 있어서,상기 제 1 TFT 영역의 소오스/드레인 영역은 상기 게이트 전극을 이용해서 배면 노광된 마스크를 사용하여 n형 불순물 이온을 주입하여 형성된 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 7 항에 있어서,상기 제 1 TFT 영역의 LDD 영역은 상기 배면 노광된 마스크의 양측면을 에싱하여 형성된 마스크를 사용해서 저농도 불순물 이온을 주입하여 형성된 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 11 항에 있어서,상기 에싱은 상기 배면 노광된 마스크의 임계 치수의 손실이 0.3 내지 1㎛가 되도록 수행하는 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 7 항에 있어서,상기 n형 불순물 이온은 인(P), 비소(As), 안티몬(Sb) 및 비스무스(Bi)로 이루어진 군에서 선택되는 어느 하나인 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 7 항에 있어서,상기 p형 불순물 이온은 붕소(B), 알루미늄(Al), 갈륨(Ga) 및 인듐(In)으로 이루어진 군에서 선택되는 어느 하나인 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 7 항에 있어서,상기 p형 불순물 이온의 도즈는 상기 n형 불순물 이온의 도즈보다 높은 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 7 항에 있어서,상기 제 1 전극 및 제 1 및 제 2 소오스/드레인 전극은 반사막과 투명도전막을 포함하여 형성하는 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 14 항에 있어서,상기 반사막은 은 또는 은 합금으로 형성하는 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 14 항에 있어서,상기 반사막과 투명도전막은 건식 식각 또는 습식 식각을 이용해서 일괄 식각하여 형성하는 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
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US20060292763A1 (en) | 2006-12-28 |
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US7915102B2 (en) | 2011-03-29 |
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