KR20060102521A - 압전 요소, 그 제조 방법, 액체 분사 헤드, 그 제조 방법,및 액체 분사 장치 - Google Patents
압전 요소, 그 제조 방법, 액체 분사 헤드, 그 제조 방법,및 액체 분사 장치 Download PDFInfo
- Publication number
- KR20060102521A KR20060102521A KR20060026069A KR20060026069A KR20060102521A KR 20060102521 A KR20060102521 A KR 20060102521A KR 20060026069 A KR20060026069 A KR 20060026069A KR 20060026069 A KR20060026069 A KR 20060026069A KR 20060102521 A KR20060102521 A KR 20060102521A
- Authority
- KR
- South Korea
- Prior art keywords
- piezoelectric
- piezoelectric layer
- film
- forming
- piezoelectric element
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000002019 doping agent Substances 0.000 claims abstract description 30
- 239000007788 liquid Substances 0.000 claims abstract description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000002243 precursor Substances 0.000 claims abstract description 29
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 13
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 13
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 11
- 229910052745 lead Inorganic materials 0.000 claims abstract description 9
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 30
- 230000005684 electric field Effects 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 12
- 239000010936 titanium Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000011572 manganese Substances 0.000 description 9
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000005238 degreasing Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910002112 ferroelectric ceramic material Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- -1 polyphenylen Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
- H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14241—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm having a cover around the piezoelectric thin film element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14419—Manifold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
Claims (12)
- 기판 위에 하부 전극을 형성하고;압전 전조 필름(piezoelectric precursor film)이 구워진 후에, Pb, Zr 및 Ti이 함유되고 Pb, Zr 및 Ti의 구성비가 Pb/(Zr+Ti)=1.0 내지 1.3인 압전 전조 필름을 상기 하부 전극 위에 형성하고, 망간, 니켈 및 스트론튬으로 구성된 그룹에서 적어도 어느 하나의 도팬트가 도프된 다음, 650 내지 750℃에서 반시간 내지 3시간 동안 상기 압전 전조 필름을 굽는 것에 의해 압전층을 형성하며; 그리고상기 압전층 위에 상부 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 압전 요소를 제조하는 방법.
- 제 1항에 있어서,상기 도팬트의 양이 상기 압전층의 10mol%보다 많지 않게 하는 것을 특징으로 하는 압전 요소를 제조하는 방법.
- 제 1항에 있어서,상기 압전층이, 복수의 압전 전조 필름을 굽는 것에 의해 압전 필름을 형성하는 압전 필름 형성 단계를 반복적으로 수행함으로써 형성되고, 각각의 압전층을 형성하는 단계에서 압전 필름을 굽는 시간의 길이가 적어도 반시간이며, 상기 압전층의 총 굽는 시간이 3시간보다 많지 않은 압전층을 형성하는 단계를 포함하는 것 을 특징으로 하는 압전 요소를 제조하는 방법.
- 제 1항 내지 제 3항 중 어느 한 항에 있어서,액체 분사 헤드가 상기 제 1 항 내지 제 3항 중 어느 하나에 따른 방법의 사용에 의해 제조되는 것을 특징으로 하는 액체 분사 헤드를 제조하는 방법.
- 기판 위쪽에 제공되는 하부 전극;상기 하부 전극 위쪽에 제공되는 압전층; 및상기 압전층 위쪽에 제공되는 상부 전극을 포함하고,상기 압전층은 상기 압전층이 망간, 니켈 및 스트론튬으로 구성된 그룹에서 선택된 적어도 어느 하나의 도팬트를 포함하며, 그리고그 압전층의 전기 저항이 20MΩ·㎝보다 낮지 않은 것을 특징으로 하는 압전요소.
- 제 5항에 있어서,상기 압전층의 내전압이 900kV/㎝보다 낮지 않은 것을 특징으로 하는 압전 요소.
- 제 5항에 있어서,상기 압전층의 누설전류가 1×10-8A/㎝2보다 많지 않은 것을 특징으로 하는 압전 요소.
- 제 5항에 있어서,상기 압전층의 상대 투과율이 750 내지 1500인 것을 특징으로 하는 압전 요소.
- 제 5항에 있어서,상기 압전층의 고압적인 전기장 및 잔여 극성 밀도가 각각 15 내지 30kV/㎝ 및 10 내지 25μC/㎝2인 것을 특징으로 하는 압전 요소.
- 기판 위쪽에 제공되는 하부 전극;상기 하부 전극 위쪽에 제공되는 압전층; 및상기 압전층 위쪽에 제공되는 상부 전극을 포함하며,상기 압전층이 망간, 니켈 및 스트론튬으로 구성하는 그룹에서 선택된 적어도 어느 하나의 도팬트를 포함하며 상기 압전층의 전기 저항이 20MΩ·㎝를 넘지 않으며,상기 압전층의 누설전류 및 내전압이 각각 1×10-8A/㎝2보다 크지 않고, 900kV/㎝보다 낮지 않은 것을 특징으로 하는 압전 요소.
- 제 5항 내지 제 10항 중 어느 한 항에 있어서,상기 제 5항 내지 제 10한 중 어느 한 항에 따른 상기 압전 요소; 및상기 압전 요소가 진동판을 사이에 삽입하여 제공되고, 노즐 오리피스와 연통하는 압력 발생 챔버가 제공되는 경로-형성 기판을 포함하는 것을 특징하는 액체 분사 헤드.
- 제 11항에 있어서,상기 제 11 항에 따른 액체 분사 헤드를 포함하는 것을 특징으로 하는 액체 분사 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00081729 | 2005-03-22 | ||
JP2005081729 | 2005-03-22 | ||
JPJP-P-2005-00359118 | 2005-12-13 | ||
JP2005359118A JP5170356B2 (ja) | 2005-03-22 | 2005-12-13 | 圧電素子及び液体噴射ヘッド並びに液体噴射装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060102521A true KR20060102521A (ko) | 2006-09-27 |
KR100835036B1 KR100835036B1 (ko) | 2008-06-03 |
Family
ID=36601144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20060026069A KR100835036B1 (ko) | 2005-03-22 | 2006-03-22 | 압전 요소, 그 제조 방법, 액체 분사 헤드, 그 제조 방법,및 액체 분사 장치 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7362039B2 (ko) |
EP (1) | EP1705725A1 (ko) |
JP (1) | JP5170356B2 (ko) |
KR (1) | KR100835036B1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5170356B2 (ja) * | 2005-03-22 | 2013-03-27 | セイコーエプソン株式会社 | 圧電素子及び液体噴射ヘッド並びに液体噴射装置 |
JP4337833B2 (ja) * | 2006-03-24 | 2009-09-30 | セイコーエプソン株式会社 | 液滴吐出ヘッドおよび液滴吐出装置 |
JP2010131979A (ja) * | 2008-10-27 | 2010-06-17 | Seiko Epson Corp | 液体噴射装置、及び、液体噴射装置の制御方法 |
JP5884959B2 (ja) * | 2010-11-16 | 2016-03-15 | セイコーエプソン株式会社 | 圧電体膜の製造方法、圧電素子及び液体噴射ヘッド並びに液体噴射装置 |
JP5394451B2 (ja) * | 2011-07-26 | 2014-01-22 | 株式会社アドバンテスト | アクチュエータの製造方法、スイッチ装置、伝送路切替装置、および試験装置 |
JP6146067B2 (ja) * | 2013-03-14 | 2017-06-14 | 株式会社リコー | 電気−機械変換素子、電気−機械変換素子の製造方法、液滴吐出ヘッド、液滴吐出装置 |
EP3196952B1 (en) | 2016-01-21 | 2019-06-19 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Mems piezoelectric transducer formed at a pcb support structure |
JP6990053B2 (ja) * | 2017-07-10 | 2022-01-12 | エスアイアイ・プリンテック株式会社 | 液体噴射ヘッド及び液体噴射装置 |
JP7194528B2 (ja) * | 2018-07-18 | 2022-12-22 | 株式会社アルバック | Pzt素子、pzt素子製造方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB509838A (en) | 1938-01-21 | 1939-07-21 | Ass Equipment Co Ltd | Improvements in or relating to liquid-fuel injection internal-combustion engines |
US3110626A (en) * | 1961-08-17 | 1963-11-12 | Minnesota Mining & Mfg | Apparatus for coating discrete solid material |
US3496323A (en) * | 1965-12-20 | 1970-02-17 | Air Reduction | Gas shielded arc welding of steel |
JPS5143199B2 (ko) * | 1971-09-25 | 1976-11-19 | ||
US4397886A (en) * | 1981-05-06 | 1983-08-09 | Sprague Electric Company | Method for making a ceramic intergranular barrier-layer capacitor |
US4933230A (en) * | 1986-09-17 | 1990-06-12 | American Cyanamid | Piezoelectric composites |
US4726099A (en) * | 1986-09-17 | 1988-02-23 | American Cyanamid Company | Method of making piezoelectric composites |
US5112433A (en) * | 1988-12-09 | 1992-05-12 | Battelle Memorial Institute | Process for producing sub-micron ceramic powders of perovskite compounds with controlled stoichiometry and particle size |
US5219811A (en) * | 1989-08-31 | 1993-06-15 | Central Glass Company, Limited | Powder composition for sintering into modified barium titanate semiconductive ceramic |
GB9025706D0 (en) * | 1990-11-27 | 1991-01-09 | Xaar Ltd | Laminate for use in manufacture of ink drop printheads |
JP3327149B2 (ja) | 1995-12-20 | 2002-09-24 | セイコーエプソン株式会社 | 圧電体薄膜素子及びこれを用いたインクジェット式記録ヘッド |
US5969935A (en) * | 1996-03-15 | 1999-10-19 | Ramtron International Corporation | Use of calcium and strontium dopants to improve retention performance in a PZT ferroelectric film |
US6340621B1 (en) * | 1996-10-30 | 2002-01-22 | The Research Foundation Of State University Of New York | Thin film capacitor and method of manufacture |
JP3576788B2 (ja) * | 1998-02-13 | 2004-10-13 | 株式会社東芝 | 電子部品及びその製造方法 |
DE69937713D1 (de) * | 1998-03-04 | 2008-01-24 | Seiko Epson Corp | Piezoelektrisches gerät, tintenstrahldruckkopf, verfahren zum herstellen und drucker |
US6203608B1 (en) * | 1998-04-15 | 2001-03-20 | Ramtron International Corporation | Ferroelectric thin films and solutions: compositions |
JP2000173301A (ja) | 1998-12-10 | 2000-06-23 | Seiko Epson Corp | 圧電発光素子、表示装置およびそれらの製造方法 |
JP3671791B2 (ja) | 1999-02-08 | 2005-07-13 | 株式会社村田製作所 | 圧電磁器組成物およびそれを用いた圧電セラミック素子 |
JP2001113705A (ja) | 1999-10-19 | 2001-04-24 | Casio Comput Co Ltd | ドライエッチング用金属マスク、これを備えたインクジェットプリンタヘッド及びその製造方法 |
JP2001152360A (ja) * | 1999-11-25 | 2001-06-05 | Ricoh Co Ltd | セラミックス誘電体膜の形成方法、セラミックス誘電体膜/基板の積層構造体、及び電気−機械変換素子 |
JP3202012B1 (ja) | 2000-03-29 | 2001-08-27 | 松下電器産業株式会社 | 圧電アクチュエータ、インクジェットヘッド及びインクジェット式記録装置 |
JP2001302348A (ja) | 2000-04-19 | 2001-10-31 | Tokin Corp | 圧電磁器組成物 |
JP2001302350A (ja) | 2000-04-19 | 2001-10-31 | Tokin Corp | 圧電磁器組成物 |
JP2001302349A (ja) | 2000-04-19 | 2001-10-31 | Tokin Corp | 圧電磁器組成物 |
JP2002226266A (ja) | 2001-01-30 | 2002-08-14 | Nec Tokin Corp | 圧電磁器組成物 |
JP4752156B2 (ja) * | 2001-08-23 | 2011-08-17 | 株式会社村田製作所 | 積層圧電素子用圧電磁器組成物、積層圧電素子、積層圧電素子の製造方法および積層圧電装置 |
EP1367658B1 (en) | 2001-12-18 | 2016-04-13 | Panasonic Intellectual Property Management Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, manufacturing method thereof, and ink jet type recording apparatus |
JP2004111835A (ja) * | 2002-09-20 | 2004-04-08 | Canon Inc | 圧電体素子の製造方法、圧電体素子及びインクジェット式記録ヘッド |
JP2004107181A (ja) | 2002-09-20 | 2004-04-08 | Canon Inc | 圧電体素子形成用組成物、圧電体膜の製造方法、圧電体素子及びインクジェット記録ヘッド |
JP3971279B2 (ja) * | 2002-09-20 | 2007-09-05 | キヤノン株式会社 | 圧電体素子の製造方法 |
TWI230477B (en) * | 2002-09-20 | 2005-04-01 | Canon Kk | Composition for forming piezoelectric film, producing method for piezoelectric film, piezoelectric element and ink jet recording head |
JP2004235553A (ja) | 2003-01-31 | 2004-08-19 | Canon Inc | 圧電体膜成膜用支持基板、圧電体素子、インクジェット記録ヘッド |
JP2005082424A (ja) | 2003-09-05 | 2005-03-31 | Nec Tokin Corp | 圧電磁器組成物 |
US7132057B2 (en) * | 2003-10-15 | 2006-11-07 | Piezotech, Llc | Compositions for high power piezoelectric ceramics |
JP5170356B2 (ja) * | 2005-03-22 | 2013-03-27 | セイコーエプソン株式会社 | 圧電素子及び液体噴射ヘッド並びに液体噴射装置 |
JP2006303425A (ja) * | 2005-03-22 | 2006-11-02 | Seiko Epson Corp | 圧電素子及び液体噴射ヘッド並びに液体噴射装置 |
-
2005
- 2005-12-13 JP JP2005359118A patent/JP5170356B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-20 EP EP20060005622 patent/EP1705725A1/en not_active Withdrawn
- 2006-03-21 US US11/384,324 patent/US7362039B2/en not_active Expired - Fee Related
- 2006-03-22 KR KR20060026069A patent/KR100835036B1/ko active IP Right Grant
-
2008
- 2008-02-28 US US12/038,875 patent/US7520038B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060244789A1 (en) | 2006-11-02 |
JP5170356B2 (ja) | 2013-03-27 |
KR100835036B1 (ko) | 2008-06-03 |
JP2006303426A (ja) | 2006-11-02 |
EP1705725A1 (en) | 2006-09-27 |
US7520038B2 (en) | 2009-04-21 |
US20080213468A1 (en) | 2008-09-04 |
US7362039B2 (en) | 2008-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100835036B1 (ko) | 압전 요소, 그 제조 방법, 액체 분사 헤드, 그 제조 방법,및 액체 분사 장치 | |
KR100741215B1 (ko) | 압전 요소, 액츄에이터 장치, 액체 분사 헤드 및 액체 분사장치 | |
JP5157157B2 (ja) | アクチュエータ装置及びその製造方法並びにその駆動方法、液体噴射ヘッド | |
US7882607B2 (en) | Method of manufacturing an actuator device | |
JP4333686B2 (ja) | アクチュエータ装置及び液体噴射ヘッド並びに液体噴射装置 | |
KR100731438B1 (ko) | 액츄에이터 장치의 제조 방법 및 액체 분사 장치 | |
KR20060102520A (ko) | 압전 요소, 액체 분사 헤드 및 액체 분사 장치 | |
US7514854B2 (en) | Piezoelectric element, liquid-jet head using piezoelectric element and liquid-jet apparatus | |
US8079677B2 (en) | Liquid ejecting head, liquid ejecting apparatus, and piezoelectric actuator | |
JP2010201830A (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
JP5344143B2 (ja) | 液体噴射ヘッド及び液体噴射装置並びに圧電素子 | |
CN100479218C (zh) | 压电元件、液体喷射头及其制造方法,液体喷射设备 | |
JP5256998B2 (ja) | アクチュエータ装置の製造方法及び液体噴射ヘッドの製造方法 | |
JP2006096589A (ja) | 誘電体膜の製造方法及び液体噴射ヘッドの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130430 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20140502 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20150430 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20160427 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20170504 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20180517 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20190515 Year of fee payment: 12 |