KR20060056971A - 바이폴라 트랜지스터를 갖는 반도체 소자의 제조방법 및바이폴라 트랜지스터를 갖는 소자 - Google Patents
바이폴라 트랜지스터를 갖는 반도체 소자의 제조방법 및바이폴라 트랜지스터를 갖는 소자 Download PDFInfo
- Publication number
- KR20060056971A KR20060056971A KR1020067002115A KR20067002115A KR20060056971A KR 20060056971 A KR20060056971 A KR 20060056971A KR 1020067002115 A KR1020067002115 A KR 1020067002115A KR 20067002115 A KR20067002115 A KR 20067002115A KR 20060056971 A KR20060056971 A KR 20060056971A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- semiconductor
- layer
- silicon
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 150000003377 silicon compounds Chemical class 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229940126657 Compound 17 Drugs 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 11
- 229910021332 silicide Inorganic materials 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 125
- 229920005591 polysilicon Polymers 0.000 description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03102405.2 | 2003-08-01 | ||
| EP03102405 | 2003-08-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20060056971A true KR20060056971A (ko) | 2006-05-25 |
Family
ID=34112485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067002115A KR20060056971A (ko) | 2003-08-01 | 2004-07-26 | 바이폴라 트랜지스터를 갖는 반도체 소자의 제조방법 및바이폴라 트랜지스터를 갖는 소자 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1654755A1 (fr) |
| JP (1) | JP2007501512A (fr) |
| KR (1) | KR20060056971A (fr) |
| TW (1) | TW200520221A (fr) |
| WO (1) | WO2005013350A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007000693A2 (fr) * | 2005-06-27 | 2007-01-04 | Nxp B.V. | Dispositif semi-conducteur et procede permettant de produire ce dispositif |
| ATE496393T1 (de) | 2005-11-21 | 2011-02-15 | Nxp Bv | Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelement |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4932981B2 (ja) | 2000-01-11 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | バイポーラトランジスタおよびその製造方法 |
| EP1137073A1 (fr) * | 2000-03-24 | 2001-09-26 | Infineon Technologies AG | Transistor bipolaire à hétérojonction ayant un contact d'émetteur en forme de T et sa méthode de fabrication |
| JP3528756B2 (ja) * | 2000-05-12 | 2004-05-24 | 松下電器産業株式会社 | 半導体装置 |
| US6605519B2 (en) * | 2001-05-02 | 2003-08-12 | Unaxis Usa, Inc. | Method for thin film lift-off processes using lateral extended etching masks and device |
-
2004
- 2004-07-26 WO PCT/IB2004/051292 patent/WO2005013350A1/fr active Application Filing
- 2004-07-26 KR KR1020067002115A patent/KR20060056971A/ko not_active Application Discontinuation
- 2004-07-26 JP JP2006522451A patent/JP2007501512A/ja not_active Withdrawn
- 2004-07-26 EP EP04744646A patent/EP1654755A1/fr not_active Withdrawn
- 2004-07-29 TW TW093122783A patent/TW200520221A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005013350A1 (fr) | 2005-02-10 |
| JP2007501512A (ja) | 2007-01-25 |
| EP1654755A1 (fr) | 2006-05-10 |
| TW200520221A (en) | 2005-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6235597B1 (en) | Semiconductor structure having reduced silicide resistance between closely spaced gates and method of fabrication | |
| JP3157357B2 (ja) | 半導体装置 | |
| KR100403009B1 (ko) | 반도체장치및그제조방법 | |
| JP2009523326A (ja) | ゲートの頂部が拡張された半導体トランジスタ | |
| EP3306670B1 (fr) | Structure de dispositif semi-conducteur ayant une paroi latérale non plane et méthode de fabrication utilisant un diélectrique doté | |
| JP2002270841A (ja) | 半導体装置及びその製造方法 | |
| KR19980071183A (ko) | 기판으로부터 돌기한 소스/드레인 층을 갖는 반도체장치 제조 방법 | |
| JP4424887B2 (ja) | 半導体素子の製造方法 | |
| JP3980461B2 (ja) | 半導体装置の製造方法 | |
| US8133791B2 (en) | Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith | |
| KR19980018188A (ko) | 비정질화된 폴리실리콘을 사용하는 서브미크론 마이크로일렉트로닉스 응용을 위한 자기 정렬 ＰＯＣｌ₃제조 방법 | |
| US11282740B2 (en) | Bulk semiconductor structure with a multi-level polycrystalline semiconductor region and method | |
| KR100370128B1 (ko) | 반도체 소자의 제조방법 | |
| KR20060056971A (ko) | 바이폴라 트랜지스터를 갖는 반도체 소자의 제조방법 및바이폴라 트랜지스터를 갖는 소자 | |
| JPH1174283A (ja) | 高速バイポーラトランジスタ及びその製造方法 | |
| KR20080006268A (ko) | 터널링 전계 효과 트랜지스터의 제조 방법 | |
| KR100591121B1 (ko) | 반도체 장치 및 그의 제조 방법 | |
| US11640975B2 (en) | Silicided collector structure | |
| KR20060062487A (ko) | 바이폴라 트랜지스터 및 그 제조방법 | |
| JP2008098554A (ja) | 半導体装置の製造方法 | |
| KR100271809B1 (ko) | 반도체장치의 플러그 형성방법 | |
| KR100307296B1 (ko) | 반도체장치의 콘택 형성방법 | |
| KR100437644B1 (ko) | 반도체장치의제조방법 | |
| KR19990041628A (ko) | 반도체소자의 제조 방법 | |
| KR100577011B1 (ko) | 반도체소자의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| N231 | Notification of change of applicant | ||
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |