TW200520221A - Method of manufacturing a semiconductor device with a bipolar transistor and device with a bipolar transistor - Google Patents
Method of manufacturing a semiconductor device with a bipolar transistor and device with a bipolar transistorInfo
- Publication number
- TW200520221A TW200520221A TW093122783A TW93122783A TW200520221A TW 200520221 A TW200520221 A TW 200520221A TW 093122783 A TW093122783 A TW 093122783A TW 93122783 A TW93122783 A TW 93122783A TW 200520221 A TW200520221 A TW 200520221A
- Authority
- TW
- Taiwan
- Prior art keywords
- stack
- silicon region
- bipolar transistor
- side face
- silicides
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03102405 | 2003-08-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200520221A true TW200520221A (en) | 2005-06-16 |
Family
ID=34112485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093122783A TW200520221A (en) | 2003-08-01 | 2004-07-29 | Method of manufacturing a semiconductor device with a bipolar transistor and device with a bipolar transistor |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1654755A1 (zh) |
| JP (1) | JP2007501512A (zh) |
| KR (1) | KR20060056971A (zh) |
| TW (1) | TW200520221A (zh) |
| WO (1) | WO2005013350A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007000693A2 (en) * | 2005-06-27 | 2007-01-04 | Nxp B.V. | Semiconductor device and method of manufacturing such a device |
| ATE496393T1 (de) | 2005-11-21 | 2011-02-15 | Nxp Bv | Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelement |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4932981B2 (ja) | 2000-01-11 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | バイポーラトランジスタおよびその製造方法 |
| EP1137073A1 (de) * | 2000-03-24 | 2001-09-26 | Infineon Technologies AG | Heterobipolar-Transistor mit T-förmigem Emitteranschlusskontakt und Herstellungsverfahren dafür |
| JP3528756B2 (ja) * | 2000-05-12 | 2004-05-24 | 松下電器産業株式会社 | 半導体装置 |
| US6605519B2 (en) * | 2001-05-02 | 2003-08-12 | Unaxis Usa, Inc. | Method for thin film lift-off processes using lateral extended etching masks and device |
-
2004
- 2004-07-26 WO PCT/IB2004/051292 patent/WO2005013350A1/en active Application Filing
- 2004-07-26 KR KR1020067002115A patent/KR20060056971A/ko not_active Application Discontinuation
- 2004-07-26 JP JP2006522451A patent/JP2007501512A/ja not_active Withdrawn
- 2004-07-26 EP EP04744646A patent/EP1654755A1/en not_active Withdrawn
- 2004-07-29 TW TW093122783A patent/TW200520221A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005013350A1 (en) | 2005-02-10 |
| JP2007501512A (ja) | 2007-01-25 |
| KR20060056971A (ko) | 2006-05-25 |
| EP1654755A1 (en) | 2006-05-10 |
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