KR20060016079A - 저감된 차단전류를 가지는 절환가능한 증폭기 회로 - Google Patents

저감된 차단전류를 가지는 절환가능한 증폭기 회로 Download PDF

Info

Publication number
KR20060016079A
KR20060016079A KR1020057018456A KR20057018456A KR20060016079A KR 20060016079 A KR20060016079 A KR 20060016079A KR 1020057018456 A KR1020057018456 A KR 1020057018456A KR 20057018456 A KR20057018456 A KR 20057018456A KR 20060016079 A KR20060016079 A KR 20060016079A
Authority
KR
South Korea
Prior art keywords
current
transistor
output
current source
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020057018456A
Other languages
English (en)
Korean (ko)
Inventor
존 에이. 데팔코
미하일 에스. 시로코브
Original Assignee
페어차일드 세미컨덕터 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 페어차일드 세미컨덕터 코포레이션 filed Critical 페어차일드 세미컨덕터 코포레이션
Publication of KR20060016079A publication Critical patent/KR20060016079A/ko
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
KR1020057018456A 2003-04-03 2004-04-02 저감된 차단전류를 가지는 절환가능한 증폭기 회로 Abandoned KR20060016079A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/406,334 2003-04-03
US10/406,334 US6803821B1 (en) 2003-04-03 2003-04-03 Switchable amplifier circuit having reduced shutdown current

Publications (1)

Publication Number Publication Date
KR20060016079A true KR20060016079A (ko) 2006-02-21

Family

ID=33097300

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057018456A Abandoned KR20060016079A (ko) 2003-04-03 2004-04-02 저감된 차단전류를 가지는 절환가능한 증폭기 회로

Country Status (7)

Country Link
US (1) US6803821B1 (enExample)
JP (1) JP2006522570A (enExample)
KR (1) KR20060016079A (enExample)
CN (1) CN100472953C (enExample)
DE (1) DE112004000525T5 (enExample)
TW (1) TWI341080B (enExample)
WO (1) WO2004091095A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004171625A (ja) * 2002-11-18 2004-06-17 Renesas Technology Corp 不揮発性記憶装置
US6922107B1 (en) * 2002-12-23 2005-07-26 Dynalinear Technologies, Inc. Dual (constant voltage/constant current) bias supply for linear power amplifiers
US7026876B1 (en) 2003-02-21 2006-04-11 Dynalinear Technologies, Inc. High linearity smart HBT power amplifiers for CDMA/WCDMA application
US7057461B1 (en) 2003-03-19 2006-06-06 Dynalinear Technologies, Inc. Heterostructure bipolar transistor power amplifier module with dynamic voltage supply for improved efficiency
US10447208B2 (en) * 2017-12-15 2019-10-15 Raytheon Company Amplifier having a switchable current bias circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4122401A (en) * 1977-07-14 1978-10-24 National Semiconductor Corporation High efficiency power amplifier circuit
JPS61147606A (ja) * 1984-12-21 1986-07-05 Toshiba Corp Rf増幅回路
JPS631107A (ja) * 1986-06-19 1988-01-06 Nec Corp 演算増幅器
IT1217736B (it) * 1988-05-26 1990-03-30 Sgs Thomson Microeletronics Sp Circuito elettronico di spegnimento ritardato autoalimentato con controllo a bassissima tensione
JPH02206208A (ja) * 1989-02-03 1990-08-16 Mitsubishi Electric Corp 電流制御回路
JP3074387B2 (ja) * 1989-02-20 2000-08-07 富士写真フイルム株式会社 利得制御回路
US5099203A (en) * 1990-06-05 1992-03-24 Continental Electronics Corporation Power amplifier having multiple switched stages and method of operating same
JP3103712B2 (ja) * 1994-03-14 2000-10-30 松下電子工業株式会社 電力増幅器及び増幅方法
US5517143A (en) * 1994-11-29 1996-05-14 Linear Technology Corporation Current mirror circuits and methods with guaranteed off state and amplifier circuits using same
JP3417260B2 (ja) * 1997-06-30 2003-06-16 株式会社島津製作所 原子吸光光度計
US6281730B1 (en) * 1999-05-13 2001-08-28 National Semiconductor Corporation Controlled slew rate driver
US6191656B1 (en) * 1999-07-23 2001-02-20 Rf Micro Devices, Inc. High efficiency, unilateral dual stage RF amplifier
JP3907157B2 (ja) * 2001-01-12 2007-04-18 株式会社ルネサステクノロジ 信号処理用半導体集積回路および無線通信システム
JP3664657B2 (ja) * 2001-02-21 2005-06-29 アールエフ・チップス・テクノロジー株式会社 ローノイズアンプ回路

Also Published As

Publication number Publication date
DE112004000525T5 (de) 2006-02-23
JP2006522570A (ja) 2006-09-28
TWI341080B (en) 2011-04-21
CN100472953C (zh) 2009-03-25
US20040196103A1 (en) 2004-10-07
CN1768473A (zh) 2006-05-03
TW200428758A (en) 2004-12-16
WO2004091095A1 (en) 2004-10-21
US6803821B1 (en) 2004-10-12

Similar Documents

Publication Publication Date Title
CN100555844C (zh) 射频放大器电路及其操作方法
JP4149261B2 (ja) 高周波増幅器及び周波数混合器
JP2005512376A (ja) 電流ミラー回路を使用するバイアス補償を有する増幅器
JP3377675B2 (ja) 高周波増幅回路
US4688001A (en) High Efficiency, low distortion amplifier
US4063185A (en) Direct coupling type power amplifier circuit
US6750718B2 (en) Radio-frequency amplifier
KR0136088B1 (ko) 연산 증폭기용 출력단
US6717968B2 (en) Laser drive device
KR20060016079A (ko) 저감된 차단전류를 가지는 절환가능한 증폭기 회로
US4369380A (en) Circuit for controlling a transistor static switch for d.c. loads with high turn-on current
US7012469B2 (en) Integrated circuit device having high efficiency at the time of low power output
US6441687B1 (en) Amplifier bias voltage generating circuit and method
US4158179A (en) Amplifier circuit
US4706039A (en) Amplifier arrangement
KR980006805A (ko) 증폭회로
CA2271111A1 (en) An arrangement for reducing and stabilizing the amplification of a darlington-coupled output stage
JP2910512B2 (ja) モノリシック電力増幅集積回路
JP3469639B2 (ja) 増幅回路
JP2834929B2 (ja) 増幅回路
JPH11177401A (ja) スイッチ回路
JP2554543B2 (ja) 電源回路
KR910000689Y1 (ko) 앰프의 온도 보상 바이어스 회로
JPH0786895A (ja) 出力回路
JPH06334451A (ja) 電流ブースト回路

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20050929

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20090305

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20100928

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20110530

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee