TWI341080B - Switchable amplifier circuit having reduced shutdown current - Google Patents

Switchable amplifier circuit having reduced shutdown current

Info

Publication number
TWI341080B
TWI341080B TW093107687A TW93107687A TWI341080B TW I341080 B TWI341080 B TW I341080B TW 093107687 A TW093107687 A TW 093107687A TW 93107687 A TW93107687 A TW 93107687A TW I341080 B TWI341080 B TW I341080B
Authority
TW
Taiwan
Prior art keywords
amplifier circuit
switchable amplifier
shutdown current
reduced shutdown
reduced
Prior art date
Application number
TW093107687A
Other languages
English (en)
Chinese (zh)
Other versions
TW200428758A (en
Inventor
A Defalco John
S Shirokov Mikhail
Original Assignee
Fairchild Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor filed Critical Fairchild Semiconductor
Publication of TW200428758A publication Critical patent/TW200428758A/zh
Application granted granted Critical
Publication of TWI341080B publication Critical patent/TWI341080B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
TW093107687A 2003-04-03 2004-03-22 Switchable amplifier circuit having reduced shutdown current TWI341080B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/406,334 US6803821B1 (en) 2003-04-03 2003-04-03 Switchable amplifier circuit having reduced shutdown current

Publications (2)

Publication Number Publication Date
TW200428758A TW200428758A (en) 2004-12-16
TWI341080B true TWI341080B (en) 2011-04-21

Family

ID=33097300

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093107687A TWI341080B (en) 2003-04-03 2004-03-22 Switchable amplifier circuit having reduced shutdown current

Country Status (7)

Country Link
US (1) US6803821B1 (enExample)
JP (1) JP2006522570A (enExample)
KR (1) KR20060016079A (enExample)
CN (1) CN100472953C (enExample)
DE (1) DE112004000525T5 (enExample)
TW (1) TWI341080B (enExample)
WO (1) WO2004091095A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004171625A (ja) * 2002-11-18 2004-06-17 Renesas Technology Corp 不揮発性記憶装置
US6922107B1 (en) * 2002-12-23 2005-07-26 Dynalinear Technologies, Inc. Dual (constant voltage/constant current) bias supply for linear power amplifiers
US7026876B1 (en) 2003-02-21 2006-04-11 Dynalinear Technologies, Inc. High linearity smart HBT power amplifiers for CDMA/WCDMA application
US7057461B1 (en) 2003-03-19 2006-06-06 Dynalinear Technologies, Inc. Heterostructure bipolar transistor power amplifier module with dynamic voltage supply for improved efficiency
US10447208B2 (en) * 2017-12-15 2019-10-15 Raytheon Company Amplifier having a switchable current bias circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4122401A (en) * 1977-07-14 1978-10-24 National Semiconductor Corporation High efficiency power amplifier circuit
JPS61147606A (ja) * 1984-12-21 1986-07-05 Toshiba Corp Ｒｆ増幅回路
JPS631107A (ja) * 1986-06-19 1988-01-06 Nec Corp 演算増幅器
IT1217736B (it) * 1988-05-26 1990-03-30 Sgs Thomson Microeletronics Sp Circuito elettronico di spegnimento ritardato autoalimentato con controllo a bassissima tensione
JPH02206208A (ja) * 1989-02-03 1990-08-16 Mitsubishi Electric Corp 電流制御回路
JP3074387B2 (ja) * 1989-02-20 2000-08-07 富士写真フイルム株式会社 利得制御回路
US5099203A (en) * 1990-06-05 1992-03-24 Continental Electronics Corporation Power amplifier having multiple switched stages and method of operating same
JP3103712B2 (ja) * 1994-03-14 2000-10-30 松下電子工業株式会社 電力増幅器及び増幅方法
US5517143A (en) * 1994-11-29 1996-05-14 Linear Technology Corporation Current mirror circuits and methods with guaranteed off state and amplifier circuits using same
JP3417260B2 (ja) * 1997-06-30 2003-06-16 株式会社島津製作所 原子吸光光度計
US6281730B1 (en) * 1999-05-13 2001-08-28 National Semiconductor Corporation Controlled slew rate driver
US6191656B1 (en) * 1999-07-23 2001-02-20 Rf Micro Devices, Inc. High efficiency, unilateral dual stage RF amplifier
JP3907157B2 (ja) * 2001-01-12 2007-04-18 株式会社ルネサステクノロジ 信号処理用半導体集積回路および無線通信システム
JP3664657B2 (ja) * 2001-02-21 2005-06-29 アールエフ・チップス・テクノロジー株式会社 ローノイズアンプ回路

Also Published As

Publication number Publication date
DE112004000525T5 (de) 2006-02-23
JP2006522570A (ja) 2006-09-28
CN100472953C (zh) 2009-03-25
US20040196103A1 (en) 2004-10-07
CN1768473A (zh) 2006-05-03
KR20060016079A (ko) 2006-02-21
TW200428758A (en) 2004-12-16
WO2004091095A1 (en) 2004-10-21
US6803821B1 (en) 2004-10-12

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees