WO2004091095A1 - Switchable amplifier circuit having reduced shutdown current - Google Patents

Switchable amplifier circuit having reduced shutdown current Download PDF

Info

Publication number
WO2004091095A1
WO2004091095A1 PCT/US2004/010013 US2004010013W WO2004091095A1 WO 2004091095 A1 WO2004091095 A1 WO 2004091095A1 US 2004010013 W US2004010013 W US 2004010013W WO 2004091095 A1 WO2004091095 A1 WO 2004091095A1
Authority
WO
WIPO (PCT)
Prior art keywords
current
transistor
output
current source
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/010013
Other languages
English (en)
French (fr)
Inventor
John A. Defalco
Mikhail S. Shirokov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Priority to DE112004000525T priority Critical patent/DE112004000525T5/de
Priority to JP2006509575A priority patent/JP2006522570A/ja
Publication of WO2004091095A1 publication Critical patent/WO2004091095A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only

Definitions

  • This invention relates to amplifiers, and more particularly to switchable power amplifiers.
  • RF radio frequency
  • the amplifier includes an RF, grounded emitter, output transistor Q RF .
  • the base of the RF transistor is fed input RF signals.
  • the base of the output transistor is also coupled to a switching transistor, Qi.
  • a diode-connected transistor Q 2 i.e., p-n junction
  • QRF When such diode- connected transistor Q conducts, a fixed, dc voltage is produced across it thereby fixing the dc voltage at the base of the RF output transistor QRF.
  • the diode- connected transistor Q 2 when conducting the diode- connected transistor Q 2 provides a fixed reference voltage at the base electrode of the RF output transistor QR F .
  • the RF transistor QRF is biased to a fixed dc operating point by providing a fixed dc current I B IA S through the collector-emitter thereof.
  • the dc current is produced by applying a fixed current through the conducting diode connected transistor Q 2 .
  • the fixed dc current is supplied by a current source, i.e., a high impedance device, here represented by a resistor.
  • the current source here produces the current indicated I.
  • the amount of dc bias current required for the RF output transistor establishes the amount of current I provided by the current source.
  • the diode-connected transistor and the RF output transistor QR F are arranged as current mirror 9 with the current through the collector of the RF transistor mirroring the current fed to the diode-connected transistor Q 2 from the current source.
  • the transistor Ql is driven on by a control voltage fed to the base thereof.
  • the on condition of transistor Ql places a low voltage at the base of RF output transistor Q RF .
  • the current I from the current source now passes through the conducting transistor Ql.
  • Transistor Ql must sink the current source current I which may be as high as 5-10 milli-amps in some applications resulting in excessive battery power drain.
  • the current mirror 9' is provided by a pair of transistors Q 2 A and Q 2 B and the RF output transistor Q R F.
  • the current mirror 9' is sometimes referred to as an enhanced current mirror.
  • the emitter follower transistor can supply extra base current as required when the RF transistor is driven under high power, large signal conditions.
  • a fixed dc voltage is produced at the base of the output transistor QRF.
  • the dc voltage is coupled to the base of the RF transistor as a fixed dc voltage and thereby provides a proper dc bias current for the RF output transistor.
  • the amount of dc bias current required for the RF output transistor is established by the amount of current I from the current source, here again represented by a resistor.
  • the transistor Ql is driven on by a control voltage fed to the base thereof.
  • the on condition places a low voltage at the base of RF output transistor QRF.
  • the current I from the current source now passes through the conducting transistor Ql.
  • Transistor Ql must sink the current source current I which may be as high as 5-10 milli-amps in some applications resulting in excessive battery power drain.
  • an amplifier circuit includes a current mirror circuit.
  • the current mirror circuit includes: a first current source for producing a reference current; an output transistor having an input electrode and an output electrode; and a current gain device connected between an output of the first current source and the input electrode of the output transistor.
  • a bias current is produced through the output electrode of the output transistor, such bias current being a function of the reference current produced by the first current source.
  • a second current source has an output coupled to an input of the current gain device. The second current source provides a current which is a fraction of the reference current.
  • a switching transistor has an output electrode coupled to: (1) an input of the current gain device; and, (2) an output of the second current source.
  • the switching transistor (1) sinks the current from the second current source in response to an input signal fed to such switching transistor inhibiting current from the second current source to pass to the current gain device and thereby remove the bias current for the output transistor driving the output transistor to a non-conducting condition; or (2) enables the current from the second current source to pass to the current gain device in response to the input signal fed to such switching transistor driving the output transistor to a conducting condition.
  • the gain device comprises a transistor.
  • the gain device transistor is driven into saturation when the switching transistor enables the current from the second current source to pass to the current gain device in response to the input signal fed to such switching transistor driving the output transistor to a conducting condition.
  • the gain device transistor comprises a bipolar transistor.
  • a transistor having the collector- emitter coupled between the fixed voltage at the output of the current source and the base of the RF transistor.
  • This transistor has its base coupled to a second current source and to a switch for such transistor.
  • the current from the second current source is fed to the base of the transistor to bias the transistor into saturation with the new circuit producing a fixed dc voltage at the base of the RF transistor and therefore provides a fixed dc bias current for the RF transistor.
  • the amount of dc bias current required for the RF transistor establishes the amount of current required for the current source.
  • the second current source is only a small fraction (1/beta) the amount of current required by the first current source to provide the requisite dc bias current for the RF transistor.
  • the switch turns the RF transistor off, the smaller current from the second current source is sunk by the switch.
  • FIG. 1 is a schematic diagram of a switchable amplifier according to the PRIOR ART
  • FIG. 2 is a schematic diagram of a switchable amplifier according to the PRIOR ART
  • FIG. 3 is a schematic diagram of a switchable amplifier according to the invention.
  • FIG. 4 is a schematic diagram of a switchable amplifier according to another embodiment of the invention.
  • the circuit 10 includes a current mirror circuit 12.
  • the current mirror circuit 12 includes a first current source 14 for producing a reference current, I.
  • the current source 14 is a high impedance device, here represented by a resistor Ri.
  • the current mirror circuit 12 also includes an RF output transistor 16, here a bipolar transistor, preferably a heterojunction bipolar transistor (HBT) device.
  • the output transistor 16 is arranged in a grounded emitter configuration with its collector connected to a Vcc supply voltage through an inductor 18, as shown.
  • An RF input for amplification by the RF output transistor 16 is coupled to the base electrode of the RF output transistor 16 though an ac coupling capacitor, C, as shown.
  • the current mirror circuit 12 also includes a reference voltage generator 20, here a diode-connected bipolar transistor Q 2 (i.e., p-n junction) coupled to a predetermined reference voltage, here ground, and the gate electrode of the output transistor 16, as shown.
  • the current mirror circuit 12 also includes a current gain device 22, here a bipolar transistor Q x , connected between an output of the current source 14 and: (a) the gate electrode of the output transistor 16; and (b) the reference voltage generator 20.
  • the current mirror circuit 12 provides a dc bias current, IBIA S , through the collector electrode of the output transistor 18.
  • the bias current IBIA S is a function of the reference current I produced by the current source 14. That is, ie diode-connected transistor Q 2 provides a p-n junction and the RF output transistor 16 are arranged as current mirror 12 with the current IB IA S through the collector of the RF transistor 16 mirroring the current I fed to the diode-connected transistor 20 from the current source 14.
  • the amplifier 10 includes a second current source 24, here represented by a resistor R 2 having an output coupled to an input of the current gain device 22, here the bipolar transistor Qx.
  • the circuit 10 also includes a switching transistor, here a grounded emitter bipolar transistor Qi having an output electrode (here collector electrode) coupled to: (1) an input of the current gain device 22; and, (2) an output of the second current source 24.
  • the switching transistor Qi, m - response to a control signal fed to its base electrode either: (1) sinks the current F (shown by the dotted arrow) from the second current source 24 in response to a control signal fed to the base of the switching transistor Qi inhibiting current from the second current source 24 from passing to the current gain device 22 and thereby removing the bias current for the output transistor 16 driving the output transistor 16 to a non-conducting condition; or (2) enables the current from the second current source 24 (shown by the solid arrow) to pass to the current gain device 22 in response to the control signal fed to the base of the switching transistor Qi driving the output transistor 16 to a conducting condition.
  • the current mirror 12' is here an enhanced current mirror and includes a pair of transistors Q 2A and Q 2B to provide the fixed dc reference voltage at the base of the RF output transistor 16.
  • the dc voltage is coupled to the base of the RF transistor as a fixed dc voltage and thereby provides a proper dc bias current for the RF output transistor.
  • the amount of dc bias current required for the RF output transistor 16 is established by the amount of current I from the current source 14, here again represented by a resistor, Ri
  • the transistor Qi is driven on by a control voltage fed to the base thereof.
  • the amplifier 10' includes a second current source 24, here represented by a resistor R 2 having an output coupled to an input of the current gain device 22, here the bipolar transistor Qx.
  • the circuit 10' also includes a switching transistor, here a grounded emitter bipolar transistor Qi having an output electrode (here collector electrode) coupled to: (1) an input of the current gain device 22; and, (2) an output of the second current source 24.
  • the switching transistor Qi in response to a control signal fed to its base electrode, either: (1) sinks the current F (shown by the dotted arrow) from the second current source 24 in response to a control signal fed to the base of the switching transistor Qi inhibiting current from the second current source 24 from passing to the current gain device 22 and thereby removing the bias current for the output transistor 16 driving the output transistor 16 to a non-conducting condition; or (2) enables the current from the second current source 24 (shown by the solid arrow) to pass to the current gain device 22 in response to the control signal fed to the base of the switching transistor Qi driving the output transistor 16 to a conducting condition.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
PCT/US2004/010013 2003-04-03 2004-04-02 Switchable amplifier circuit having reduced shutdown current Ceased WO2004091095A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112004000525T DE112004000525T5 (de) 2003-04-03 2004-04-02 Schaltbare Verstärkerschaltung mit einem reduzierten Abschaltstrom
JP2006509575A JP2006522570A (ja) 2003-04-03 2004-04-02 低シャットダウン電流を有する切替自在な増幅回路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/406,334 US6803821B1 (en) 2003-04-03 2003-04-03 Switchable amplifier circuit having reduced shutdown current
US10/406,334 2003-04-03

Publications (1)

Publication Number Publication Date
WO2004091095A1 true WO2004091095A1 (en) 2004-10-21

Family

ID=33097300

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/010013 Ceased WO2004091095A1 (en) 2003-04-03 2004-04-02 Switchable amplifier circuit having reduced shutdown current

Country Status (7)

Country Link
US (1) US6803821B1 (enExample)
JP (1) JP2006522570A (enExample)
KR (1) KR20060016079A (enExample)
CN (1) CN100472953C (enExample)
DE (1) DE112004000525T5 (enExample)
TW (1) TWI341080B (enExample)
WO (1) WO2004091095A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004171625A (ja) * 2002-11-18 2004-06-17 Renesas Technology Corp 不揮発性記憶装置
US6922107B1 (en) * 2002-12-23 2005-07-26 Dynalinear Technologies, Inc. Dual (constant voltage/constant current) bias supply for linear power amplifiers
US7026876B1 (en) 2003-02-21 2006-04-11 Dynalinear Technologies, Inc. High linearity smart HBT power amplifiers for CDMA/WCDMA application
US7057461B1 (en) 2003-03-19 2006-06-06 Dynalinear Technologies, Inc. Heterostructure bipolar transistor power amplifier module with dynamic voltage supply for improved efficiency
US10447208B2 (en) * 2017-12-15 2019-10-15 Raytheon Company Amplifier having a switchable current bias circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4122401A (en) * 1977-07-14 1978-10-24 National Semiconductor Corporation High efficiency power amplifier circuit
US5517143A (en) * 1994-11-29 1996-05-14 Linear Technology Corporation Current mirror circuits and methods with guaranteed off state and amplifier circuits using same
US6191656B1 (en) * 1999-07-23 2001-02-20 Rf Micro Devices, Inc. High efficiency, unilateral dual stage RF amplifier
US6281730B1 (en) * 1999-05-13 2001-08-28 National Semiconductor Corporation Controlled slew rate driver

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147606A (ja) * 1984-12-21 1986-07-05 Toshiba Corp Ｒｆ増幅回路
JPS631107A (ja) * 1986-06-19 1988-01-06 Nec Corp 演算増幅器
IT1217736B (it) * 1988-05-26 1990-03-30 Sgs Thomson Microeletronics Sp Circuito elettronico di spegnimento ritardato autoalimentato con controllo a bassissima tensione
JPH02206208A (ja) * 1989-02-03 1990-08-16 Mitsubishi Electric Corp 電流制御回路
JP3074387B2 (ja) * 1989-02-20 2000-08-07 富士写真フイルム株式会社 利得制御回路
US5099203A (en) * 1990-06-05 1992-03-24 Continental Electronics Corporation Power amplifier having multiple switched stages and method of operating same
JP3103712B2 (ja) * 1994-03-14 2000-10-30 松下電子工業株式会社 電力増幅器及び増幅方法
JP3417260B2 (ja) * 1997-06-30 2003-06-16 株式会社島津製作所 原子吸光光度計
JP3907157B2 (ja) * 2001-01-12 2007-04-18 株式会社ルネサステクノロジ 信号処理用半導体集積回路および無線通信システム
JP3664657B2 (ja) * 2001-02-21 2005-06-29 アールエフ・チップス・テクノロジー株式会社 ローノイズアンプ回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4122401A (en) * 1977-07-14 1978-10-24 National Semiconductor Corporation High efficiency power amplifier circuit
US5517143A (en) * 1994-11-29 1996-05-14 Linear Technology Corporation Current mirror circuits and methods with guaranteed off state and amplifier circuits using same
US6281730B1 (en) * 1999-05-13 2001-08-28 National Semiconductor Corporation Controlled slew rate driver
US6191656B1 (en) * 1999-07-23 2001-02-20 Rf Micro Devices, Inc. High efficiency, unilateral dual stage RF amplifier

Also Published As

Publication number Publication date
US6803821B1 (en) 2004-10-12
US20040196103A1 (en) 2004-10-07
CN100472953C (zh) 2009-03-25
JP2006522570A (ja) 2006-09-28
TWI341080B (en) 2011-04-21
TW200428758A (en) 2004-12-16
KR20060016079A (ko) 2006-02-21
DE112004000525T5 (de) 2006-02-23
CN1768473A (zh) 2006-05-03

Similar Documents

Publication Publication Date Title
CN100555844C (zh) 射频放大器电路及其操作方法
WO2002047252A2 (en) Self-boosting circuit for a power amplifier
JP4694772B2 (ja) 電力増幅器のバイアス制御回路
CN112003595A (zh) 用于并联的开关晶体管的米勒钳位装置及包括其的驱动器
US6486739B1 (en) Amplifier with self-bias boosting using an enhanced wilson current mirror biasing scheme
US20020113656A1 (en) Amplifier
US6498533B1 (en) Bootstrapped dual-gate class E amplifier circuit
US4688001A (en) High Efficiency, low distortion amplifier
US6803821B1 (en) Switchable amplifier circuit having reduced shutdown current
US6750718B2 (en) Radio-frequency amplifier
EP0196131B1 (en) Amplifier arrangement
US7012469B2 (en) Integrated circuit device having high efficiency at the time of low power output
JPH0580164B2 (enExample)
US10965264B2 (en) Bias circuit for supplying a bias current to an RF power amplifier
KR100654644B1 (ko) 최적화된 전력 효율을 갖는 전력 증폭기
US20030058045A1 (en) Power control in RF amplifiers
JPH0548348A (ja) 電力増幅回路
EP1413054B1 (en) Auxiliary circuitry for monolithic microwave integrated circuit
JPH07202585A (ja) 高周波電力増幅回路
US20060055437A1 (en) Driver circuit
KR100669831B1 (ko) 기생-전류 제한기를 구비한 증폭기 출력단
US20120319768A1 (en) Complementary Darlington Emitter Follower with Improved Switching Speed and Improved Cross-over Control and Increased Output Voltage
JP2003258576A (ja) 高周波電力増幅器およびそれを用いた電子装置
JP2005341014A (ja) 高周波増幅器
CN116317998A (zh) 一种基于砷化镓材料的控制电路及其应用的射频前端芯片

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004808429X

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020057018456

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2006509575

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 1020057018456

Country of ref document: KR

122 Ep: pct application non-entry in european phase