KR20050086366A - 광 기록매체의 반사막용의 은합금 - Google Patents
광 기록매체의 반사막용의 은합금 Download PDFInfo
- Publication number
- KR20050086366A KR20050086366A KR1020047012143A KR20047012143A KR20050086366A KR 20050086366 A KR20050086366 A KR 20050086366A KR 1020047012143 A KR1020047012143 A KR 1020047012143A KR 20047012143 A KR20047012143 A KR 20047012143A KR 20050086366 A KR20050086366 A KR 20050086366A
- Authority
- KR
- South Korea
- Prior art keywords
- reflectance
- silver alloy
- silver
- optical recording
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229910001316 Ag alloy Inorganic materials 0.000 title claims abstract description 44
- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000004332 silver Substances 0.000 claims abstract description 23
- 229910052718 tin Inorganic materials 0.000 claims abstract description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052738 indium Inorganic materials 0.000 claims abstract description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000654 additive Substances 0.000 claims abstract description 13
- 230000000996 additive effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000005477 sputtering target Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 40
- 239000010409 thin film Substances 0.000 description 28
- 239000010408 film Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 22
- 238000005260 corrosion Methods 0.000 description 21
- 230000007797 corrosion Effects 0.000 description 21
- 238000012360 testing method Methods 0.000 description 20
- 229910045601 alloy Inorganic materials 0.000 description 15
- 239000000956 alloy Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005486 sulfidation Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002358040A JP2004192702A (ja) | 2002-12-10 | 2002-12-10 | 光記録媒体の反射膜用の銀合金 |
| JPJP-P-2002-00358040 | 2002-12-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050086366A true KR20050086366A (ko) | 2005-08-30 |
Family
ID=32500889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020047012143A Ceased KR20050086366A (ko) | 2002-12-10 | 2003-12-09 | 광 기록매체의 반사막용의 은합금 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20050089439A1 (enExample) |
| EP (1) | EP1569215A4 (enExample) |
| JP (1) | JP2004192702A (enExample) |
| KR (1) | KR20050086366A (enExample) |
| CN (1) | CN1323397C (enExample) |
| AU (1) | AU2003289251A1 (enExample) |
| TW (1) | TW200419000A (enExample) |
| WO (1) | WO2004053861A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7572517B2 (en) | 2002-07-08 | 2009-08-11 | Target Technology Company, Llc | Reflective or semi-reflective metal alloy coatings |
| JP4379602B2 (ja) * | 2003-08-20 | 2009-12-09 | 三菱マテリアル株式会社 | 半透明反射膜または反射膜を構成層とする光記録媒体および前記反射膜の形成に用いられるAg合金スパッタリングターゲット |
| JP4309227B2 (ja) * | 2003-10-16 | 2009-08-05 | 石福金属興業株式会社 | スパッタリングターゲット材 |
| CN101260484A (zh) * | 2005-02-07 | 2008-09-10 | 株式会社神户制钢所 | 记录膜、光学信息记录介质以及溅射靶 |
| JP2006240289A (ja) * | 2005-02-07 | 2006-09-14 | Kobe Steel Ltd | 光情報記録媒体用記録膜および光情報記録媒体ならびにスパッタリングターゲット |
| JP4575211B2 (ja) * | 2005-03-31 | 2010-11-04 | 株式会社東芝 | 記憶媒体、再生方法及び記録方法 |
| JP2007035104A (ja) * | 2005-07-22 | 2007-02-08 | Kobe Steel Ltd | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
| FR2893632B1 (fr) * | 2005-11-18 | 2008-01-25 | Commissariat Energie Atomique | Revetement a base d'argent resistant a la sulfuration, procede de depot et utilisation |
| JP2008004151A (ja) * | 2006-06-21 | 2008-01-10 | Toshiba Corp | 片面多層光ディスク、bca記録装置、bca記録方法及び光ディスク装置 |
| CN101449184B (zh) * | 2006-11-17 | 2012-04-04 | 田中贵金属工业株式会社 | 反射膜或半透反射膜用的薄膜及溅射靶材以及光记录介质 |
| US7910190B2 (en) * | 2006-11-17 | 2011-03-22 | Tanaka Kinkinzoku Kogyo K.K. | Thin film for reflection film or for semi-transparent reflection film, sputtering target and optical recording medium |
| US20110151276A1 (en) * | 2008-07-07 | 2011-06-23 | Sandvik Intellectual Property Ab | Anti tarnish silver alloy |
| SE536911C2 (sv) * | 2011-02-09 | 2014-10-28 | Impact Coatings Ab | Material för att åstadkomma ett elektriskt ledande kontaktskikt, ett kontaktelement med sådant skikt, metod för att åstadkomma kontaktelementet, samt användning av materialet |
| KR20140015432A (ko) * | 2011-04-06 | 2014-02-06 | 미쓰비시 마테리알 가부시키가이샤 | 도전성 막 형성용 은 합금 스퍼터링 타깃 및 그 제조 방법 |
| JP5830907B2 (ja) * | 2011-04-06 | 2015-12-09 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
| JP5830908B2 (ja) * | 2011-04-06 | 2015-12-09 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
| JP2013077547A (ja) * | 2011-09-15 | 2013-04-25 | Mitsubishi Materials Corp | 導電性膜及びその製造方法並びに導電性膜形成用銀合金スパッタリングターゲット及びその製造方法 |
| JP5159962B1 (ja) * | 2012-01-10 | 2013-03-13 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
| JP5850077B2 (ja) * | 2014-04-09 | 2016-02-03 | 三菱マテリアル株式会社 | Ag合金膜及びAg合金膜形成用スパッタリングターゲット |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2011002C3 (de) * | 1970-03-09 | 1978-10-05 | Fa. Dr. Eugen Duerrwaechter Doduco, 7530 Pforzheim | Schmelzmetallurgisch hergestellter innenoxidierter Kontaktwerkstoff auf Silber-Kadmiumoxid-Basis |
| JPS616220A (ja) * | 1984-06-21 | 1986-01-11 | Tanaka Kikinzoku Kogyo Kk | 装飾品用銀材料 |
| JPS616223A (ja) * | 1984-06-21 | 1986-01-11 | Tanaka Kikinzoku Kogyo Kk | 装飾品用銀材料 |
| JPS6173847A (ja) * | 1984-09-18 | 1986-04-16 | Tanaka Kikinzoku Kogyo Kk | 耐硫化性銀合金 |
| US4636270A (en) * | 1985-09-23 | 1987-01-13 | Chugai Denki Kogyo K.K. | Internal oxidized Ag-Sn system alloy contact materials |
| JPS62130245A (ja) * | 1985-11-29 | 1987-06-12 | Tanaka Kikinzoku Kogyo Kk | 装飾品用銀材料 |
| JPS62243725A (ja) * | 1986-04-16 | 1987-10-24 | Seiko Epson Corp | 耐硫化性銀合金 |
| JP2727729B2 (ja) * | 1989-03-24 | 1998-03-18 | 三菱マテリアル株式会社 | 太陽電池のインターコネクタ用Ag合金箔材 |
| JPH06243509A (ja) * | 1993-02-19 | 1994-09-02 | Ricoh Co Ltd | 光反射膜及び該膜を用いた光記録情報媒体 |
| JPH081374A (ja) * | 1994-06-17 | 1996-01-09 | Tanaka Kikinzoku Kogyo Kk | 白金装飾品用ろう付合金 |
| TW446637B (en) * | 1996-05-28 | 2001-07-21 | Mitsui Chemicals Inc | Transparent laminates and optical filters for displays using the same |
| JPH10143917A (ja) * | 1996-11-08 | 1998-05-29 | Kao Corp | 光記録媒体 |
| US6139652A (en) * | 1997-01-23 | 2000-10-31 | Stern-Leach | Tarnish-resistant hardenable fine silver alloys |
| JP3570607B2 (ja) * | 1998-03-13 | 2004-09-29 | トヨタ自動車株式会社 | 摺動部材 |
| US6544616B2 (en) * | 2000-07-21 | 2003-04-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| JP3840345B2 (ja) * | 1999-03-19 | 2006-11-01 | 富士写真フイルム株式会社 | 光情報記録媒体 |
| JP2001035014A (ja) * | 1999-07-19 | 2001-02-09 | Ricoh Co Ltd | 光情報記録媒体及びその製造方法並びにその製造に用いるスパッタ装置 |
| CN1217028C (zh) * | 2001-03-16 | 2005-08-31 | 石福金属兴业株式会社 | 溅射靶材 |
| JP3915114B2 (ja) * | 2001-11-26 | 2007-05-16 | 三菱マテリアル株式会社 | 光記録媒体の反射膜形成用銀合金スパッタリングターゲット |
-
2002
- 2002-12-10 JP JP2002358040A patent/JP2004192702A/ja active Pending
-
2003
- 2003-12-04 TW TW092134136A patent/TW200419000A/zh unknown
- 2003-12-09 AU AU2003289251A patent/AU2003289251A1/en not_active Abandoned
- 2003-12-09 WO PCT/JP2003/015696 patent/WO2004053861A1/ja not_active Ceased
- 2003-12-09 US US10/501,751 patent/US20050089439A1/en not_active Abandoned
- 2003-12-09 CN CNB2003801002061A patent/CN1323397C/zh not_active Expired - Lifetime
- 2003-12-09 EP EP03777368A patent/EP1569215A4/en not_active Withdrawn
- 2003-12-09 KR KR1020047012143A patent/KR20050086366A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US20050089439A1 (en) | 2005-04-28 |
| JP2004192702A (ja) | 2004-07-08 |
| CN1703746A (zh) | 2005-11-30 |
| TW200419000A (en) | 2004-10-01 |
| EP1569215A1 (en) | 2005-08-31 |
| WO2004053861A1 (ja) | 2004-06-24 |
| EP1569215A4 (en) | 2009-03-18 |
| AU2003289251A1 (en) | 2004-06-30 |
| CN1323397C (zh) | 2007-06-27 |
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