KR20050028571A - 반도체 소자 제조방법 - Google Patents
반도체 소자 제조방법 Download PDFInfo
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- KR20050028571A KR20050028571A KR1020030064912A KR20030064912A KR20050028571A KR 20050028571 A KR20050028571 A KR 20050028571A KR 1020030064912 A KR1020030064912 A KR 1020030064912A KR 20030064912 A KR20030064912 A KR 20030064912A KR 20050028571 A KR20050028571 A KR 20050028571A
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- diffusion preventing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 33
- 150000002500 ions Chemical class 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000009792 diffusion process Methods 0.000 claims abstract description 44
- 239000012535 impurity Substances 0.000 claims abstract description 30
- -1 halo ions Chemical class 0.000 claims abstract description 23
- 238000005468 ion implantation Methods 0.000 claims abstract description 20
- 125000001475 halogen functional group Chemical group 0.000 claims abstract 4
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 230000000903 blocking effect Effects 0.000 abstract 5
- 238000009413 insulation Methods 0.000 abstract 1
- 125000005843 halogen group Chemical group 0.000 description 25
- 238000002955 isolation Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000007567 mass-production technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
Description
Claims (11)
- 반도체 기판 상에 게이트 절연막 및 게이트 전극을 형성하는 단계;상기 기판 상에 확산 방지용 이온을 주입하여 확산 방지용 이온 영역을 형성하는 단계;상기 기판 전면 상에 제 1 도전형의 불순물 이온을 주입하여 상기 확산 방지용 이온 영역에 상응하는 부위의 반도체 기판 내에 할로 영역을 형성하는 단계;상기 기판 상에 제 2 도전형의 불순물 이온을 주입하여 상기 게이트 전극 좌우의 반도체 기판 내에 저농도 이온 주입 영역을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항에 있어서, 상기 제 1 도전형의 불순물 이온은 p형 불순물 이온이고, 제 2 도전형의 불순물 이온은 n형 불순물 이온인 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항에 있어서, 상기 확산 방지용 이온은 상기 반도체 기판 내에 주입되어 기판의 원자 격자 사이의 침입형 사이트(Interstitial site)에 위치하는 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항에 있어서, 상기 확산 방지용 이온은 상기 반도체 기판의 원자 크기보다는 크고 상기 제 1 도전형의 불순물 이온의 크기에 상응하는 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항 또는 제 4 항에 있어서, 상기 확산 방지용 이온은 탄소 이온인 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항에 있어서, 상기 제 1 도전형의 불순물 이온은 붕소(B) 이온인 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항에 있어서, 상기 확산 방지용 이온은 10∼50KeV의 에너지로 1E13∼1E15 ions/cm2 의 농도로 기판 전면 상에 주입하는 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항에 있어서, 상기 제 1 도전형의 불순물 이온은 10∼50KeV의 에너지로 5E13∼5E14 ions/cm2 의 농도로 기판 전면 상에 주입하는 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항에 있어서, 상기 기판의 열처리 공정은 불활성 가스 분위기 하에서 900∼1050℃의 온도와 10∼20초의 공정 시간을 적용하여 수행되는 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항에 있어서, 상기 확산 방지용 이온 영역을 형성하는 단계는,상기 확산 방지용 이온을 상기 반도체 기판의 수직축에 대하여 하향 경사진 5∼30°의 각도로 주입하는 것을 특징으로 하는 반도체 소자 제조방법.
- 제 1 항에 있어서, 상기 할로 영역을 형성하는 단계는,상기 제 1 도전형 불순물 이온을 상기 반도체 기판의 수직축에 대하여 하향 경사진 5∼30°의 각도로 주입하는 것을 특징으로 하는 반도체 소자 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030064912A KR100588786B1 (ko) | 2003-09-18 | 2003-09-18 | 반도체 소자 제조방법 |
US10/944,316 US7217627B2 (en) | 2003-09-18 | 2004-09-17 | Semiconductor devices having diffusion barrier regions and halo implant regions and methods of fabricating the same |
US11/786,168 US20070187757A1 (en) | 2003-09-18 | 2007-04-10 | Semiconductor devices and methods of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030064912A KR100588786B1 (ko) | 2003-09-18 | 2003-09-18 | 반도체 소자 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20050028571A true KR20050028571A (ko) | 2005-03-23 |
KR100588786B1 KR100588786B1 (ko) | 2006-06-12 |
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KR1020030064912A KR100588786B1 (ko) | 2003-09-18 | 2003-09-18 | 반도체 소자 제조방법 |
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US (2) | US7217627B2 (ko) |
KR (1) | KR100588786B1 (ko) |
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US6518136B2 (en) | 2000-12-14 | 2003-02-11 | International Business Machines Corporation | Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabrication |
US6724798B2 (en) * | 2001-12-31 | 2004-04-20 | Honeywell International Inc. | Optoelectronic devices and method of production |
JP4236992B2 (ja) * | 2002-06-24 | 2009-03-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2003
- 2003-09-18 KR KR1020030064912A patent/KR100588786B1/ko active IP Right Grant
-
2004
- 2004-09-17 US US10/944,316 patent/US7217627B2/en active Active
-
2007
- 2007-04-10 US US11/786,168 patent/US20070187757A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7816734B2 (en) | 2007-12-12 | 2010-10-19 | Samsung Electronics Co., Ltd. | Field-effect transistor including localized halo ion regions, and semiconductor memory, memory card, and system including the same |
Also Published As
Publication number | Publication date |
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US20070187757A1 (en) | 2007-08-16 |
US7217627B2 (en) | 2007-05-15 |
KR100588786B1 (ko) | 2006-06-12 |
US20050077573A1 (en) | 2005-04-14 |
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