KR20050005479A - 고신뢰성 제3족 발광 다이오드 - Google Patents

고신뢰성 제3족 발광 다이오드 Download PDF

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Publication number
KR20050005479A
KR20050005479A KR10-2004-7018346A KR20047018346A KR20050005479A KR 20050005479 A KR20050005479 A KR 20050005479A KR 20047018346 A KR20047018346 A KR 20047018346A KR 20050005479 A KR20050005479 A KR 20050005479A
Authority
KR
South Korea
Prior art keywords
layer
light emitting
contact
silicon nitride
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2004-7018346A
Other languages
English (en)
Korean (ko)
Inventor
에드몬드존아담
티보트브라이언
슬레이터데이비드비어드슬리쥬니어
네글리게랄드에이치.
미에츠코브스키반알렌
Original Assignee
크리 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 크리 인코포레이티드 filed Critical 크리 인코포레이티드
Publication of KR20050005479A publication Critical patent/KR20050005479A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Formation Of Insulating Films (AREA)
KR10-2004-7018346A 2002-05-14 2003-05-14 고신뢰성 제3족 발광 다이오드 Withdrawn KR20050005479A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/145,222 2002-05-14
US10/145,222 US6825501B2 (en) 1997-08-29 2002-05-14 Robust Group III light emitting diode for high reliability in standard packaging applications
PCT/US2003/014990 WO2003098712A2 (en) 2002-05-14 2003-05-14 High-reliability group iii-nitride light emitting diode

Publications (1)

Publication Number Publication Date
KR20050005479A true KR20050005479A (ko) 2005-01-13

Family

ID=29548262

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7018346A Withdrawn KR20050005479A (ko) 2002-05-14 2003-05-14 고신뢰성 제3족 발광 다이오드

Country Status (11)

Country Link
US (3) US6825501B2 (https=)
EP (2) EP2144307B1 (https=)
JP (2) JP2005526403A (https=)
KR (1) KR20050005479A (https=)
CN (1) CN100407449C (https=)
AT (1) ATE451722T1 (https=)
AU (1) AU2003237835A1 (https=)
CA (1) CA2485640A1 (https=)
DE (1) DE60330452D1 (https=)
TW (1) TWI253185B (https=)
WO (1) WO2003098712A2 (https=)

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Also Published As

Publication number Publication date
EP1509956B1 (en) 2009-12-09
WO2003098712A3 (en) 2004-06-10
US20030025121A1 (en) 2003-02-06
EP2144307B1 (en) 2018-10-03
TWI253185B (en) 2006-04-11
EP2144307A3 (en) 2015-04-15
AU2003237835A1 (en) 2003-12-02
US7125737B2 (en) 2006-10-24
US20050095737A1 (en) 2005-05-05
TW200408146A (en) 2004-05-16
EP1509956A2 (en) 2005-03-02
US6825501B2 (en) 2004-11-30
ATE451722T1 (de) 2009-12-15
JP2005526403A (ja) 2005-09-02
CN1653625A (zh) 2005-08-10
CN100407449C (zh) 2008-07-30
EP2144307A2 (en) 2010-01-13
US20030201453A2 (en) 2003-10-30
US20070085104A1 (en) 2007-04-19
JP2010016409A (ja) 2010-01-21
WO2003098712A2 (en) 2003-11-27
CA2485640A1 (en) 2003-11-27
US7473938B2 (en) 2009-01-06
DE60330452D1 (de) 2010-01-21

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20041112

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid