KR20040054793A - 패시베이션 층 내의 균열 형성에 내성이 있는 집적회로 - Google Patents
패시베이션 층 내의 균열 형성에 내성이 있는 집적회로 Download PDFInfo
- Publication number
- KR20040054793A KR20040054793A KR10-2004-7007777A KR20047007777A KR20040054793A KR 20040054793 A KR20040054793 A KR 20040054793A KR 20047007777 A KR20047007777 A KR 20047007777A KR 20040054793 A KR20040054793 A KR 20040054793A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- passivation layer
- substrate
- interconnect
- integrated circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/990,460 | 2001-11-21 | ||
| US09/990,460 US6630402B2 (en) | 2001-11-21 | 2001-11-21 | Integrated circuit resistant to the formation of cracks in a passivation layer |
| PCT/US2002/037266 WO2003046956A1 (en) | 2001-11-21 | 2002-11-20 | An integrated circuit resistant to the formation of cracks in a passivation layer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097021918A Division KR20090117908A (ko) | 2001-11-21 | 2002-11-20 | 패시베이션 층의 무결성을 개선하는 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040054793A true KR20040054793A (ko) | 2004-06-25 |
Family
ID=25536172
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097021918A KR20090117908A (ko) | 2001-11-21 | 2002-11-20 | 패시베이션 층의 무결성을 개선하는 방법 |
| KR10-2004-7007777A KR20040054793A (ko) | 2001-11-21 | 2002-11-20 | 패시베이션 층 내의 균열 형성에 내성이 있는 집적회로 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097021918A KR20090117908A (ko) | 2001-11-21 | 2002-11-20 | 패시베이션 층의 무결성을 개선하는 방법 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6630402B2 (zh) |
| EP (1) | EP1454339A4 (zh) |
| JP (2) | JP4502640B2 (zh) |
| KR (2) | KR20090117908A (zh) |
| CN (1) | CN1592946A (zh) |
| AU (1) | AU2002348309A1 (zh) |
| TW (1) | TW200300583A (zh) |
| WO (1) | WO2003046956A1 (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4746262B2 (ja) * | 2003-09-17 | 2011-08-10 | Ｏｋｉセミコンダクタ株式会社 | 半導体装置の製造方法 |
| US7348672B2 (en) * | 2005-07-07 | 2008-03-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnects with improved reliability |
| US7510883B2 (en) * | 2005-09-30 | 2009-03-31 | Everspin Technologies, Inc. | Magnetic tunnel junction temperature sensors and methods |
| US7511990B2 (en) * | 2005-09-30 | 2009-03-31 | Everspin Technologies, Inc. | Magnetic tunnel junction temperature sensors |
| US7947941B2 (en) * | 2006-11-01 | 2011-05-24 | Finisar Corporation | Photodiode having rounded edges for high electrostatic discharge threshold |
| US8575022B2 (en) | 2011-11-28 | 2013-11-05 | International Business Machines Corporation | Top corner rounding of damascene wire for insulator crack suppression |
| US9577023B2 (en) | 2013-06-04 | 2017-02-21 | Globalfoundries Inc. | Metal wires of a stacked inductor |
| US9076804B2 (en) * | 2013-08-23 | 2015-07-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods to enhance passivation integrity |
| CN112234028A (zh) * | 2020-10-27 | 2021-01-15 | 上海华虹宏力半导体制造有限公司 | 降低钝化层应力的方法及钝化层应力缓冲结构 |
| CN115548110B (zh) * | 2022-11-28 | 2023-03-21 | 深圳市威兆半导体股份有限公司 | 半导体器件及其制造方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5690525A (en) | 1979-11-28 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| US5371411A (en) | 1980-09-01 | 1994-12-06 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
| JPS6015957A (ja) * | 1983-07-08 | 1985-01-26 | Oki Electric Ind Co Ltd | 半導体装置 |
| US4425183A (en) | 1983-08-08 | 1984-01-10 | Ncr Corporation | Metal bevel process for multi-level metal semiconductor applications |
| JPS61255039A (ja) * | 1985-05-07 | 1986-11-12 | Rohm Co Ltd | 半導体素子 |
| FR2582445B1 (fr) | 1985-05-21 | 1988-04-08 | Efcis | Procede de fabrication de transistors mos a electrodes de siliciure metallique |
| JPS62120355U (zh) * | 1986-01-22 | 1987-07-30 | ||
| US5072266A (en) | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
| JPH0438830A (ja) * | 1990-06-04 | 1992-02-10 | Kawasaki Steel Corp | 半導体装置 |
| US5410170A (en) | 1993-04-14 | 1995-04-25 | Siliconix Incorporated | DMOS power transistors with reduced number of contacts using integrated body-source connections |
| US5416048A (en) | 1993-04-16 | 1995-05-16 | Micron Semiconductor, Inc. | Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage |
| JP3400846B2 (ja) | 1994-01-20 | 2003-04-28 | 三菱電機株式会社 | トレンチ構造を有する半導体装置およびその製造方法 |
| KR100190927B1 (ko) * | 1996-07-18 | 1999-06-01 | 윤종용 | 슬릿이 형성된 금속막을 구비한 반도체 칩 장치 |
| JP3285509B2 (ja) * | 1997-03-18 | 2002-05-27 | 三菱電機株式会社 | 半導体装置 |
| US5939335A (en) * | 1998-01-06 | 1999-08-17 | International Business Machines Corporation | Method for reducing stress in the metallization of an integrated circuit |
| US6077789A (en) | 1998-07-14 | 2000-06-20 | United Microelectronics Corp. | Method for forming a passivation layer with planarization |
| JP2000294771A (ja) * | 1999-04-02 | 2000-10-20 | Fuji Electric Co Ltd | プレーナ型半導体装置 |
| US6121149A (en) | 1999-04-22 | 2000-09-19 | Advanced Micro Devices, Inc. | Optimized trench/via profile for damascene filling |
| KR100302615B1 (ko) * | 1999-08-10 | 2001-11-01 | 김영환 | 층간절연막의 크랙 방지구조 |
| JP3356162B2 (ja) * | 1999-10-19 | 2002-12-09 | 株式会社デンソー | 半導体装置及びその製造方法 |
| JP2001185557A (ja) * | 1999-12-22 | 2001-07-06 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
-
2001
- 2001-11-21 US US09/990,460 patent/US6630402B2/en not_active Expired - Fee Related
-
2002
- 2002-11-19 TW TW091133748A patent/TW200300583A/zh unknown
- 2002-11-20 KR KR1020097021918A patent/KR20090117908A/ko active IP Right Grant
- 2002-11-20 CN CNA02823247XA patent/CN1592946A/zh active Pending
- 2002-11-20 KR KR10-2004-7007777A patent/KR20040054793A/ko active Search and Examination
- 2002-11-20 JP JP2003548283A patent/JP4502640B2/ja not_active Expired - Fee Related
- 2002-11-20 EP EP02782335A patent/EP1454339A4/en not_active Withdrawn
- 2002-11-20 WO PCT/US2002/037266 patent/WO2003046956A1/en active Search and Examination
- 2002-11-20 AU AU2002348309A patent/AU2002348309A1/en not_active Abandoned
-
2010
- 2010-02-18 JP JP2010033939A patent/JP2010147498A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW200300583A (en) | 2003-06-01 |
| US6630402B2 (en) | 2003-10-07 |
| EP1454339A4 (en) | 2009-04-01 |
| KR20090117908A (ko) | 2009-11-13 |
| AU2002348309A1 (en) | 2003-06-10 |
| JP2010147498A (ja) | 2010-07-01 |
| WO2003046956A1 (en) | 2003-06-05 |
| JP2005533367A (ja) | 2005-11-04 |
| JP4502640B2 (ja) | 2010-07-14 |
| CN1592946A (zh) | 2005-03-09 |
| US20030096461A1 (en) | 2003-05-22 |
| EP1454339A1 (en) | 2004-09-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| AMND | Amendment | ||
| E902 | Notification of reason for refusal | ||
| A107 | Divisional application of patent | ||
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| AMND | Amendment | ||
| J201 | Request for trial against refusal decision | ||
| B601 | Maintenance of original decision after re-examination before a trial | ||
| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20100226 Effective date: 20110506 |