KR20040041666A - 반도체 웨이퍼 고정용 어셈블리 시스템 및 반도체 웨이퍼제조 방법 - Google Patents

반도체 웨이퍼 고정용 어셈블리 시스템 및 반도체 웨이퍼제조 방법 Download PDF

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Publication number
KR20040041666A
KR20040041666A KR10-2004-7005000A KR20047005000A KR20040041666A KR 20040041666 A KR20040041666 A KR 20040041666A KR 20047005000 A KR20047005000 A KR 20047005000A KR 20040041666 A KR20040041666 A KR 20040041666A
Authority
KR
South Korea
Prior art keywords
semiconductor wafer
holding block
adhesive composition
assembly system
meth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7005000A
Other languages
English (en)
Korean (ko)
Inventor
웨이나스탠리에프
플라스로버트
Original Assignee
클래리언트 파이낸스(비브이아이)리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 클래리언트 파이낸스(비브이아이)리미티드 filed Critical 클래리언트 파이낸스(비브이아이)리미티드
Publication of KR20040041666A publication Critical patent/KR20040041666A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/14—Layer or component removable to expose adhesive

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Bipolar Transistors (AREA)
KR10-2004-7005000A 2001-10-11 2002-10-02 반도체 웨이퍼 고정용 어셈블리 시스템 및 반도체 웨이퍼제조 방법 Ceased KR20040041666A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/975,437 US20030092246A1 (en) 2001-10-11 2001-10-11 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
US09/975,437 2001-10-11
PCT/EP2002/011043 WO2003033208A1 (en) 2001-10-11 2002-10-02 Assembly system for stationing semiconductor wafer and process f or manufacturing semiconductor wafer

Publications (1)

Publication Number Publication Date
KR20040041666A true KR20040041666A (ko) 2004-05-17

Family

ID=25523031

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7005000A Ceased KR20040041666A (ko) 2001-10-11 2002-10-02 반도체 웨이퍼 고정용 어셈블리 시스템 및 반도체 웨이퍼제조 방법

Country Status (10)

Country Link
US (2) US20030092246A1 (https=)
EP (1) EP1448340B1 (https=)
JP (1) JP2005505943A (https=)
KR (1) KR20040041666A (https=)
CN (1) CN100420546C (https=)
AT (1) ATE332211T1 (https=)
DE (1) DE60212992T2 (https=)
MY (1) MY132030A (https=)
TW (1) TW593613B (https=)
WO (1) WO2003033208A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6643507B1 (en) 1998-12-31 2003-11-04 At&T Corp. Wireless centrex automatic callback
US20050282961A1 (en) * 2004-06-18 2005-12-22 Hsienkun Tsai Pressure-sensitive label laminates with improved convertability and broad temperature adhesion performance
EP1966410B1 (en) 2005-09-26 2018-12-26 Planar Solutions LLC Ultrapure colloidal silica for use in chemical mechanical polishing applications
JP5020496B2 (ja) * 2005-10-28 2012-09-05 東京応化工業株式会社 接着剤組成物および接着フィルム
NL1036215A1 (nl) * 2007-12-11 2009-06-15 Asml Netherlands Bv Lithographic method and carrier substrate.
CN101885613B (zh) * 2010-07-29 2012-07-04 西安理工大学 电子陶瓷成型用粘合剂及其制备方法
FR3005895B1 (fr) * 2013-05-27 2015-06-26 Commissariat Energie Atomique Procede d'assemblage de deux substrats de nature differente via une couche intermediaire ductile
US10556317B2 (en) 2016-03-03 2020-02-11 P.R. Hoffman Machine Products Inc. Polishing machine wafer holder
CN106041739B (zh) * 2016-05-27 2018-02-23 华侨大学 一种超硬磨料磨具的微生物修整方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251400A (en) * 1971-11-03 1981-02-17 Borden, Inc. Hot and cold water redispersible polyvinyl acetate adhesives
US3905928A (en) * 1974-02-15 1975-09-16 Burlington Industries Inc Hot melt size and yarn sized therewith
US4073756A (en) * 1976-04-26 1978-02-14 Konishi Co., Ltd. Solid adhesive compositions
JPS608426Y2 (ja) * 1976-12-08 1985-03-25 シャープ株式会社 半導体ウエハ−の保持基板
US5714029A (en) * 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
US4853286A (en) * 1984-05-29 1989-08-01 Mitsui Toatsu Chemicals, Incorporated Wafer processing film
JP2807322B2 (ja) * 1989-10-09 1998-10-08 三井化学株式会社 帯電防止性に優れた樹脂組成物
JPH0641504A (ja) * 1991-07-12 1994-02-15 Saiden Kagaku Kk アルカリ可溶型粘着剤組成物
KR930006846A (ko) * 1991-09-02 1993-04-22 사와무라 하루오 반도체 웨이퍼의 이면 연삭방법 및 그 방법에 이용하는 점착 테이프
US5196443A (en) * 1991-09-25 1993-03-23 Buckman Laboratories International, Inc. Synergistic combinations of 2-(thiocyanomethylthio) benzothiazole with a mixture of 4,4-dimethyloxazolidine and 3,4,4-trimethyloxazolidine in controlling fungal and bacterial growth in aqueous fluids
US5534053A (en) * 1993-01-12 1996-07-09 Rodel, Inc. Composition for reducing or eliminating static charge in adhesive film
JP3410202B2 (ja) * 1993-04-28 2003-05-26 日本テキサス・インスツルメンツ株式会社 ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法
IL113583A (en) * 1994-05-26 1999-12-22 Rohm & Haas Acrylic pressure sensitive adhesive
TW311927B (https=) * 1995-07-11 1997-08-01 Minnesota Mining & Mfg
IT1279051B1 (it) * 1995-10-27 1997-12-04 3V Sigma Spa Composizioni addensanti in forma solida costituite da polimeri o copolimeri e poliglicoli
JP2741362B2 (ja) * 1995-12-05 1998-04-15 日化精工株式会社 ウエハ−の仮着用接着剤
JPH09260471A (ja) * 1996-03-18 1997-10-03 Kazuo Inoue 焼結炭化硅素基体上に化学蒸着炭化硅素膜をコーティングした半導体ウエハ用真空チャック
JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
US5700581A (en) * 1996-06-26 1997-12-23 International Business Machines Corporation Solvent-free epoxy based adhesives for semiconductor chip attachment and process
DE19756614A1 (de) * 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren zur Montage und Demontage einer Halbleiterscheibe, und Stoffmischung, die zur Durchführung des Verfahrens geeignet ist
JP2000015573A (ja) 1998-06-30 2000-01-18 Ibiden Co Ltd ウェハ研磨装置用ウェハ保持プレート及び半導体ウェハの研磨方法
JP4275221B2 (ja) * 1998-07-06 2009-06-10 リンテック株式会社 粘接着剤組成物および粘接着シート
JP2001226650A (ja) * 2000-02-16 2001-08-21 Nitto Denko Corp 放射線硬化型熱剥離性粘着シート、及びこれを用いた切断片の製造方法
US6952025B2 (en) * 2000-06-08 2005-10-04 Showa Denko K.K. Semiconductor light-emitting device

Also Published As

Publication number Publication date
DE60212992D1 (de) 2006-08-17
DE60212992T2 (de) 2007-02-22
TW593613B (en) 2004-06-21
EP1448340B1 (en) 2006-07-05
ATE332211T1 (de) 2006-07-15
CN1568244A (zh) 2005-01-19
JP2005505943A (ja) 2005-02-24
US20030190446A1 (en) 2003-10-09
EP1448340A1 (en) 2004-08-25
US6924016B2 (en) 2005-08-02
WO2003033208A1 (en) 2003-04-24
MY132030A (en) 2007-09-28
US20030092246A1 (en) 2003-05-15
CN100420546C (zh) 2008-09-24

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