DE60212992D1 - Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten - Google Patents

Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten

Info

Publication number
DE60212992D1
DE60212992D1 DE60212992T DE60212992T DE60212992D1 DE 60212992 D1 DE60212992 D1 DE 60212992D1 DE 60212992 T DE60212992 T DE 60212992T DE 60212992 T DE60212992 T DE 60212992T DE 60212992 D1 DE60212992 D1 DE 60212992D1
Authority
DE
Germany
Prior art keywords
semiconductor wafer
holding block
semiconductor plates
coated
connection system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60212992T
Other languages
English (en)
Other versions
DE60212992T2 (de
Inventor
Stanley F Wanat
Robert Plass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Application granted granted Critical
Publication of DE60212992D1 publication Critical patent/DE60212992D1/de
Publication of DE60212992T2 publication Critical patent/DE60212992T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/14Layer or component removable to expose adhesive

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Bipolar Transistors (AREA)
DE60212992T 2001-10-11 2002-10-02 Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten Expired - Lifetime DE60212992T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US975437 2001-10-11
US09/975,437 US20030092246A1 (en) 2001-10-11 2001-10-11 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
PCT/EP2002/011043 WO2003033208A1 (en) 2001-10-11 2002-10-02 Assembly system for stationing semiconductor wafer and process f or manufacturing semiconductor wafer

Publications (2)

Publication Number Publication Date
DE60212992D1 true DE60212992D1 (de) 2006-08-17
DE60212992T2 DE60212992T2 (de) 2007-02-22

Family

ID=25523031

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60212992T Expired - Lifetime DE60212992T2 (de) 2001-10-11 2002-10-02 Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten

Country Status (10)

Country Link
US (2) US20030092246A1 (de)
EP (1) EP1448340B1 (de)
JP (1) JP2005505943A (de)
KR (1) KR20040041666A (de)
CN (1) CN100420546C (de)
AT (1) ATE332211T1 (de)
DE (1) DE60212992T2 (de)
MY (1) MY132030A (de)
TW (1) TW593613B (de)
WO (1) WO2003033208A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6643507B1 (en) 1998-12-31 2003-11-04 At&T Corp. Wireless centrex automatic callback
US20050282961A1 (en) * 2004-06-18 2005-12-22 Hsienkun Tsai Pressure-sensitive label laminates with improved convertability and broad temperature adhesion performance
KR20080059266A (ko) * 2005-09-26 2008-06-26 플레이너 솔루션즈 엘엘씨 화학적 기계적 연마 용도로 사용되기 위한 초고순도의콜로이드 실리카
JP5020496B2 (ja) * 2005-10-28 2012-09-05 東京応化工業株式会社 接着剤組成物および接着フィルム
NL1036215A1 (nl) * 2007-12-11 2009-06-15 Asml Netherlands Bv Lithographic method and carrier substrate.
CN101885613B (zh) * 2010-07-29 2012-07-04 西安理工大学 电子陶瓷成型用粘合剂及其制备方法
FR3005895B1 (fr) * 2013-05-27 2015-06-26 Commissariat Energie Atomique Procede d'assemblage de deux substrats de nature differente via une couche intermediaire ductile
US10556317B2 (en) 2016-03-03 2020-02-11 P.R. Hoffman Machine Products Inc. Polishing machine wafer holder
CN106041739B (zh) 2016-05-27 2018-02-23 华侨大学 一种超硬磨料磨具的微生物修整方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251400A (en) * 1971-11-03 1981-02-17 Borden, Inc. Hot and cold water redispersible polyvinyl acetate adhesives
US3905928A (en) * 1974-02-15 1975-09-16 Burlington Industries Inc Hot melt size and yarn sized therewith
US4073756A (en) * 1976-04-26 1978-02-14 Konishi Co., Ltd. Solid adhesive compositions
JPS608426Y2 (ja) * 1976-12-08 1985-03-25 シャープ株式会社 半導体ウエハ−の保持基板
US5714029A (en) * 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
WO1985005734A1 (en) * 1984-05-29 1985-12-19 Mitsui Toatsu Chemicals, Incorporated Film for machining wafers
JP2807322B2 (ja) * 1989-10-09 1998-10-08 三井化学株式会社 帯電防止性に優れた樹脂組成物
JPH0641504A (ja) * 1991-07-12 1994-02-15 Saiden Kagaku Kk アルカリ可溶型粘着剤組成物
KR930006846A (ko) * 1991-09-02 1993-04-22 사와무라 하루오 반도체 웨이퍼의 이면 연삭방법 및 그 방법에 이용하는 점착 테이프
US5196443A (en) * 1991-09-25 1993-03-23 Buckman Laboratories International, Inc. Synergistic combinations of 2-(thiocyanomethylthio) benzothiazole with a mixture of 4,4-dimethyloxazolidine and 3,4,4-trimethyloxazolidine in controlling fungal and bacterial growth in aqueous fluids
US5534053A (en) * 1993-01-12 1996-07-09 Rodel, Inc. Composition for reducing or eliminating static charge in adhesive film
JP3410202B2 (ja) * 1993-04-28 2003-05-26 日本テキサス・インスツルメンツ株式会社 ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法
IL113583A (en) * 1994-05-26 1999-12-22 Rohm & Haas Acrylic pressure sensitive adhesive
TW311927B (de) * 1995-07-11 1997-08-01 Minnesota Mining & Mfg
IT1279051B1 (it) * 1995-10-27 1997-12-04 3V Sigma Spa Composizioni addensanti in forma solida costituite da polimeri o copolimeri e poliglicoli
JP2741362B2 (ja) * 1995-12-05 1998-04-15 日化精工株式会社 ウエハ−の仮着用接着剤
JPH09260471A (ja) * 1996-03-18 1997-10-03 Kazuo Inoue 焼結炭化硅素基体上に化学蒸着炭化硅素膜をコーティングした半導体ウエハ用真空チャック
JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
US5700581A (en) * 1996-06-26 1997-12-23 International Business Machines Corporation Solvent-free epoxy based adhesives for semiconductor chip attachment and process
DE19756614A1 (de) * 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren zur Montage und Demontage einer Halbleiterscheibe, und Stoffmischung, die zur Durchführung des Verfahrens geeignet ist
JP2000015573A (ja) 1998-06-30 2000-01-18 Ibiden Co Ltd ウェハ研磨装置用ウェハ保持プレート及び半導体ウェハの研磨方法
JP4275221B2 (ja) * 1998-07-06 2009-06-10 リンテック株式会社 粘接着剤組成物および粘接着シート
JP2001226650A (ja) * 2000-02-16 2001-08-21 Nitto Denko Corp 放射線硬化型熱剥離性粘着シート、及びこれを用いた切断片の製造方法
AU6071501A (en) * 2000-06-08 2001-12-17 Showa Denko Kabushiki Kaisha Semiconductor light-emitting device

Also Published As

Publication number Publication date
KR20040041666A (ko) 2004-05-17
CN1568244A (zh) 2005-01-19
DE60212992T2 (de) 2007-02-22
ATE332211T1 (de) 2006-07-15
JP2005505943A (ja) 2005-02-24
CN100420546C (zh) 2008-09-24
EP1448340B1 (de) 2006-07-05
US20030092246A1 (en) 2003-05-15
EP1448340A1 (de) 2004-08-25
MY132030A (en) 2007-09-28
WO2003033208A1 (en) 2003-04-24
TW593613B (en) 2004-06-21
US20030190446A1 (en) 2003-10-09
US6924016B2 (en) 2005-08-02

Similar Documents

Publication Publication Date Title
ATE389043T1 (de) Verfahren zur beschichtung eines substrates mit calciumphosphat
EP0903792A3 (de) Verfahren zum Herstellen einer Mehrzahl von Halbleiterkörpern
ATE394353T1 (de) Verfahren zur herstellung von schichten und schichtsystemen sowie beschichtetes substrat
MY125775A (en) Method for treating substrates for microelectronics and substrates obtained by said method.
DK1241930T3 (da) Klæbende mikrostruktur og fremgangsmåde til fremstilling af samme
DE60333715D1 (de) Verfahren zur Herstellung funktioneller Substrate, die kolumnare Mikrosäulen aufweisen
ATE418420T1 (de) Verfahren zum polieren der oberfläche eines substrats
DE69842001D1 (de) Galvanisches verfahren zur herstellung einer mehrlagenstruktur
DE502004011649D1 (de) Verfahren zur behandlung von substratoberflächen
FI991163A (fi) Kiinnityslaitteita ja menetelmiä useiden objektien paikoittamiseksi substraatille
BRPI0507024A (pt) partìculas, processo para a preparação de partìculas, e, uso das partìculas
WO2003028048A3 (en) Low-force electrochemical mechanical processing method and apparatus
DE59711861D1 (de) Verfahren zur Herstellung eines Chip-Moduls
DE50307493D1 (de) Verfahren zur herstellung von strahlungshärtbaren urethan(meth)acrylaten
DE60212992D1 (de) Verbindungssystem zum befestigen von halbleiterplatten sowie verfahren zur herstellung von halbleiterplatten
DE60103422D1 (de) Einheitliche bürste mit schleifmittelbeschichteten borsten und verfahren zu deren herstellung
ATE301696T1 (de) Verfahren zum kleben von substraten unter verwendung einer lichtaktivierbaren klebstofffolie
DE60214202D1 (de) Verfahren zum kleben von substraten unter verwendung einer uv-aktivierbaren klebfolie, sowie eine uv- bestrahlungsvorrichtung.
DE10292173D2 (de) Verfahren und Vorrichtung zur Herstellung von Furnieren und von furnierten Teilen sowie Furniere und furnierte Teile
DE60231466D1 (de) Verfahren zur Wiederherstellung von Diffusions-Aluminid-Beschichtung
EP1046462A3 (de) Halteplatte für Scheiben bei Schleifmaschinen und Verfahren zur Herstellung dieser Platte
DE50310646D1 (de) Verfahren zur beschichtung von metalloberflächen
DE69703600T2 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69522976T2 (de) Verfahren zur Herstellung eines Substrats für die Fabrikation von Halbleitervorrichtungen aus Silizium
WO2005021830A3 (en) Ceramic article having corrosion-resistant layer and method for forming same

Legal Events

Date Code Title Description
8364 No opposition during term of opposition