KR20040029143A - 유기 박막 트랜지스터용 표면 개질층 - Google Patents

유기 박막 트랜지스터용 표면 개질층 Download PDF

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Publication number
KR20040029143A
KR20040029143A KR10-2004-7003160A KR20047003160A KR20040029143A KR 20040029143 A KR20040029143 A KR 20040029143A KR 20047003160 A KR20047003160 A KR 20047003160A KR 20040029143 A KR20040029143 A KR 20040029143A
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KR
South Korea
Prior art keywords
thin film
sicl
gate dielectric
self
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7003160A
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English (en)
Korean (ko)
Inventor
토미더블유. 켈리
다운브이. 뮈레스
마크제이. 페렐라이트
티모시디. 던바
래리디. 보드맨
테란스피. 스미스
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20040029143A publication Critical patent/KR20040029143A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
KR10-2004-7003160A 2001-09-06 2002-08-26 유기 박막 트랜지스터용 표면 개질층 Ceased KR20040029143A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/947,845 US6433359B1 (en) 2001-09-06 2001-09-06 Surface modifying layers for organic thin film transistors
US09/947,845 2001-09-06
PCT/US2002/027172 WO2003023877A2 (en) 2001-09-06 2002-08-26 Surface modifying layers for organic thin film transistors

Publications (1)

Publication Number Publication Date
KR20040029143A true KR20040029143A (ko) 2004-04-03

Family

ID=25486873

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7003160A Ceased KR20040029143A (ko) 2001-09-06 2002-08-26 유기 박막 트랜지스터용 표면 개질층

Country Status (8)

Country Link
US (1) US6433359B1 (https=)
EP (1) EP1425806A2 (https=)
JP (1) JP4511175B2 (https=)
KR (1) KR20040029143A (https=)
CN (1) CN100407473C (https=)
AU (1) AU2002331736A1 (https=)
TW (1) TWI225708B (https=)
WO (1) WO2003023877A2 (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100730159B1 (ko) * 2005-11-10 2007-06-19 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이를 구비한 평판표시장치, 상기유기 박막 트랜지스터의 제조방법
KR100772662B1 (ko) * 2006-02-01 2007-11-02 학교법인 포항공과대학교 전계 효과 전하 이동도를 증가시킬 수 있는 유기 박막트랜지스터 및 그 제조방법
KR100777162B1 (ko) * 2005-07-06 2007-12-03 양재우 저전압 유기나노트랜지스터 소자 및 그의 제조방법
KR100858930B1 (ko) * 2006-02-24 2008-09-17 고려대학교 산학협력단 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
KR100858928B1 (ko) * 2007-02-20 2008-09-17 고려대학교 산학협력단 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
KR101275999B1 (ko) * 2006-09-22 2013-06-19 엘지디스플레이 주식회사 박막트랜지스터, 이를 구비하는 표시장치 및 이들의 제조방법
KR20180001482A (ko) * 2016-06-27 2018-01-04 숭실대학교산학협력단 유기 반도체 소자의 제조 방법
WO2018004093A1 (ko) * 2016-06-30 2018-01-04 숭실대학교산학협력단 유기 반도체 소자 및 그 제조 방법
WO2018004219A3 (ko) * 2016-06-27 2018-02-22 숭실대학교 산학협력단 유기 반도체 소자의 제조 방법
US10991894B2 (en) 2015-03-19 2021-04-27 Foundation Of Soongsil University-Industry Cooperation Compound of organic semiconductor and organic semiconductor device using the same

Families Citing this family (141)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7815963B2 (en) 1996-10-17 2010-10-19 The Trustees Of Princeton University Enhanced bonding layers on titanium materials
US7396594B2 (en) * 2002-06-24 2008-07-08 The Trustees Of Princeton University Carrier applied coating layers
US7569285B2 (en) * 1996-10-17 2009-08-04 The Trustees Of Princeton University Enhanced bonding layers on titanium materials
US20060194008A1 (en) * 1999-09-22 2006-08-31 Princeton University Devices with multiple surface functionality
US6485986B1 (en) 1999-11-19 2002-11-26 Purdue Research Foundation Functionalized silicon surfaces
US6657378B2 (en) * 2001-09-06 2003-12-02 The Trustees Of Princeton University Organic photovoltaic devices
DE10153656A1 (de) * 2001-10-31 2003-05-22 Infineon Technologies Ag Verfahren zur Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren durch Aufbringen einer reaktiven, die organische Halbleiterschicht im Kontaktbereich regio-selektiv dotierenden Zwischenschicht
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6677607B2 (en) * 2002-01-25 2004-01-13 Motorola, Inc. Organic semiconductor device having an oxide layer
US6768132B2 (en) * 2002-03-07 2004-07-27 3M Innovative Properties Company Surface modified organic thin film transistors
US6885146B2 (en) 2002-03-14 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates
US6891190B2 (en) * 2002-05-23 2005-05-10 Motorola, Inc. Organic semiconductor device and method
DE10226370B4 (de) * 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET)
US6870181B2 (en) * 2002-07-02 2005-03-22 Motorola, Inc. Organic contact-enhancing layer for organic field effect transistors
CN100594617C (zh) * 2002-07-31 2010-03-17 三菱化学株式会社 场效应晶体管
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US7285440B2 (en) * 2002-11-25 2007-10-23 International Business Machines Corporation Organic underlayers that improve the performance of organic semiconductors
US7088145B2 (en) * 2002-12-23 2006-08-08 3M Innovative Properties Company AC powered logic circuitry
EP1434281A3 (en) * 2002-12-26 2007-10-24 Konica Minolta Holdings, Inc. Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit
US20040126708A1 (en) * 2002-12-31 2004-07-01 3M Innovative Properties Company Method for modifying the surface of a polymeric substrate
KR100968560B1 (ko) * 2003-01-07 2010-07-08 삼성전자주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의금속배선 형성방법
JP2006517463A (ja) * 2003-02-11 2006-07-27 プリンストン ユニヴァーシティ 表面に結合した、有機酸を用いた単分子層
ITTO20030145A1 (it) * 2003-02-28 2004-09-01 Infm Istituto Naz Per La Fisi Ca Della Mater Procedimento per la fabbricazione di dispositivi ad effetto di campo a film sottile privi di substrato e transistore a film sottile organico ottenibile mediante tale procedimento.
JP2004327857A (ja) * 2003-04-25 2004-11-18 Pioneer Electronic Corp 有機トランジスタの製造方法および有機トランジスタ
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
US6969166B2 (en) * 2003-05-29 2005-11-29 3M Innovative Properties Company Method for modifying the surface of a substrate
US20040241396A1 (en) * 2003-05-29 2004-12-02 3M Innovative Properties Company Method of modifying a surface of a substrate and articles therefrom
US20040241323A1 (en) * 2003-05-29 2004-12-02 3M Innovative Properties Company Method for applying adhesive to a substrate
US20040241395A1 (en) * 2003-05-29 2004-12-02 3M Innovative Properties Company Method of modifying a surface of a substrate and articles therefrom
KR20040105975A (ko) * 2003-06-10 2004-12-17 삼성전자주식회사 반도체 소자용 배선 및 그의 제조 방법과 이를 포함하는박막 트랜지스터 표시판 및 그의 제조 방법
DE10328811B4 (de) * 2003-06-20 2005-12-29 Infineon Technologies Ag Verbindung zur Bildung einer selbstorganisierenden Monolage, Schichtstruktur, Halbleiterbauelement mit einer Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur
JP4470398B2 (ja) * 2003-06-23 2010-06-02 Ｔｄｋ株式会社 電界効果トランジスタ
JP4228204B2 (ja) * 2003-07-07 2009-02-25 セイコーエプソン株式会社 有機トランジスタの製造方法
US7091517B2 (en) * 2003-07-11 2006-08-15 Purdue Research Foundation Patterned functionalized silicon surfaces
US7109519B2 (en) * 2003-07-15 2006-09-19 3M Innovative Properties Company Bis(2-acenyl)acetylene semiconductors
KR100973811B1 (ko) 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
US7122828B2 (en) * 2003-09-24 2006-10-17 Lucent Technologies, Inc. Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
JP2005108949A (ja) * 2003-09-29 2005-04-21 Matsushita Electric Ind Co Ltd 電界効果トランジスタおよびその製造方法
KR100678771B1 (ko) 2003-09-30 2007-02-02 학교법인연세대학교 유기 박막 트랜지스터 및 그의 제조방법
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
DE10353093A1 (de) * 2003-11-12 2005-06-16 H.C. Starck Gmbh Unsymmetrische lineare organische Oligomere
US6989290B2 (en) * 2003-11-15 2006-01-24 Ari Aviram Electrical contacts for molecular electronic transistors
CN100421279C (zh) * 2003-11-17 2008-09-24 中国科学院长春应用化学研究所 含有修饰层的有机薄膜晶体管器件及其加工方法
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
US7078937B2 (en) * 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
US7659138B2 (en) * 2003-12-26 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an organic semiconductor element
GB0400997D0 (en) * 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
KR100592503B1 (ko) * 2004-02-10 2006-06-23 진 장 유기 반도체의 선택적 증착을 통한 박막트랜지스터 어레이제조 방법
DE102004008784B3 (de) 2004-02-23 2005-09-15 Infineon Technologies Ag Verfahren zur Durchkontaktierung von Feldeffekttransistoren mit einer selbstorganisierten Monolage einer organischen Verbindung als Gatedielektrikum
JP4661065B2 (ja) * 2004-03-22 2011-03-30 セイコーエプソン株式会社 相補型有機半導体装置
US7838871B2 (en) 2004-03-24 2010-11-23 Samsung Mobile Display Co., Ltd. Organic field-effect transistor, flat panel display device including the same, and a method of manufacturing the organic field-effect transistor
US7692184B2 (en) * 2004-03-24 2010-04-06 Japan Science And Technology Agency Substrate with organic thin film, and transistor using same
NO321555B1 (no) * 2004-03-26 2006-05-29 Thin Film Electronics Asa Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning
KR100615216B1 (ko) * 2004-04-29 2006-08-25 삼성에스디아이 주식회사 유기 억셉터막을 구비한 유기 박막 트랜지스터
DE102004022603A1 (de) * 2004-05-07 2005-12-15 Infineon Technologies Ag Ultradünne Dielektrika und deren Anwendung in organischen Feldeffekt-Transistoren
US7935836B2 (en) * 2004-05-18 2011-05-03 Alexander Graham Fallis Compounds comprising a linear series of five fused carbon rings, and preparation thereof
US7655809B2 (en) * 2004-05-18 2010-02-02 University Of Ottawa Compounds comprising a linear series of five fused carbon rings, and preparation thereof
DE102004025423B4 (de) * 2004-05-24 2008-03-06 Qimonda Ag Dünnfilm-Feldeffekt-Transistor mit Gate-Dielektrikum aus organischem Material und Verfahren zu dessen Herstellung
WO2005122293A2 (en) * 2004-06-08 2005-12-22 Princeton University Formation of ordered thin films of organics on metal oxide surfaces
US7019328B2 (en) * 2004-06-08 2006-03-28 Palo Alto Research Center Incorporated Printed transistors
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
CN1741298B (zh) * 2004-08-23 2010-07-14 财团法人工业技术研究院 提高有机半导体载子迁移率的方法
TWI234304B (en) * 2004-09-03 2005-06-11 Ind Tech Res Inst Process of increasing carrier mobility of organic semiconductor
GB2418062A (en) * 2004-09-03 2006-03-15 Seiko Epson Corp An organic Field-Effect Transistor with a charge transfer injection layer
KR100659061B1 (ko) * 2004-09-20 2006-12-19 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판표시장치
US7399668B2 (en) * 2004-09-30 2008-07-15 3M Innovative Properties Company Method for making electronic devices having a dielectric layer surface treatment
JP4502382B2 (ja) * 2004-11-02 2010-07-14 キヤノン株式会社 有機トランジスタ
US20060113569A1 (en) * 2004-11-03 2006-06-01 Akinwande Akintunde I Control of threshold voltage in organic field effect transistors
US20060105199A1 (en) * 2004-11-18 2006-05-18 3M Innovative Properties Company Electroluminescent devices containing trans-1,2-bis(acenyl)ethylene compounds
US7315042B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds
KR100669802B1 (ko) 2004-12-04 2007-01-16 삼성에스디아이 주식회사 박막 트랜지스터, 이의 제조 방법 및 상기 박막트랜지스터를 구비한 평판 표시 장치
KR101064773B1 (ko) * 2004-12-09 2011-09-14 삼성전자주식회사 유기박막 트랜지스터의 제조방법
GB2421115A (en) * 2004-12-09 2006-06-14 Seiko Epson Corp A self-aligning patterning method for use in the manufacture of a plurality of thin film transistors
US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
WO2006081274A1 (en) * 2005-01-27 2006-08-03 Aculon, Inc. Thin films
US7504132B2 (en) * 2005-01-27 2009-03-17 International Business Machines Corporation Selective placement of carbon nanotubes on oxide surfaces
KR100647683B1 (ko) * 2005-03-08 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치
US7151276B2 (en) * 2005-03-09 2006-12-19 3M Innovative Properties Company Semiconductors containing perfluoroether acyl oligothiophene compounds
US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
JP4972870B2 (ja) * 2005-03-29 2012-07-11 セイコーエプソン株式会社 半導体素子の製造方法および半導体装置
US7282735B2 (en) * 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
US20060231908A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation Multilayer gate dielectric
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
CA2547799A1 (en) * 2005-05-27 2006-11-27 University Of Ottawa Compounds comprising a linear series of five fused carbon rings, and preparation thereof
US7319153B2 (en) * 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds
US7964012B2 (en) 2005-08-03 2011-06-21 Hollingsworth & Vose Company Filter media with improved conductivity
KR100658286B1 (ko) * 2005-08-11 2006-12-14 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 이용한 평판표시장치
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
JP4860980B2 (ja) * 2005-10-20 2012-01-25 ローム株式会社 モータ駆動回路およびそれを用いたディスク装置
US8414962B2 (en) 2005-10-28 2013-04-09 The Penn State Research Foundation Microcontact printed thin film capacitors
JP2007129007A (ja) * 2005-11-02 2007-05-24 Hitachi Ltd 有機半導体膜を有する半導体装置の製造方法
WO2007070673A1 (en) * 2005-12-15 2007-06-21 Cabot Corporation Transparent polymer composites
TW200731589A (en) * 2006-02-06 2007-08-16 Yang Jae Woo Organic thin film transistor using ultra-thin metal oxide as gate dielectric and fabrication method thereof
KR100788758B1 (ko) * 2006-02-06 2007-12-26 양재우 저전압 유기 박막 트랜지스터 및 그 제조 방법
TW200737520A (en) * 2006-03-17 2007-10-01 Univ Nat Chiao Tung Gate dielectric structure and an organic thin film transistor based thereon
US7667230B2 (en) * 2006-03-31 2010-02-23 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers
US7608679B2 (en) * 2006-03-31 2009-10-27 3M Innovative Properties Company Acene-thiophene copolymers
US7666968B2 (en) * 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
CN100555702C (zh) * 2006-04-29 2009-10-28 中国科学院长春应用化学研究所 有机半导体晶体薄膜及弱取向外延生长制备方法和应用
CN100590904C (zh) * 2006-06-06 2010-02-17 中华映管股份有限公司 图案化制程及应用此制程的有机薄膜晶体管的制作方法
JP5120588B2 (ja) * 2006-07-10 2013-01-16 独立行政法人科学技術振興機構 分子素子
US7470974B2 (en) * 2006-07-14 2008-12-30 Cabot Corporation Substantially transparent material for use with light-emitting device
KR101151159B1 (ko) * 2006-09-19 2012-06-01 삼성전자주식회사 포스페이트계 자기조립단분자막을 포함하는 유기 박막트랜지스터 및 그 제조방법
CN101165938B (zh) * 2006-10-19 2010-12-01 三星移动显示器株式会社 有机薄膜晶体管、其制法及包括其的平板显示器
US20080135891A1 (en) * 2006-12-08 2008-06-12 Palo Alto Research Center, Incorporated Transistor Device Formed on a Flexible Substrate Including Anodized Gate Dielectric
TWI323034B (en) * 2006-12-25 2010-04-01 Ind Tech Res Inst Electronic devices with hybrid high-k dielectric and fabrication methods thereof
CN101221981B (zh) * 2007-01-09 2010-06-23 财团法人工业技术研究院 具有混合高介电材料层的电子元件及其制造方法
US20080271625A1 (en) * 2007-01-22 2008-11-06 Nano Terra Inc. High-Throughput Apparatus for Patterning Flexible Substrates and Method of Using the Same
US8030648B2 (en) * 2007-02-23 2011-10-04 Konica Minolta Holdings, Inc. Organic thin film transistor and organic thin film transistor manufacturing process
JP5320746B2 (ja) * 2007-03-28 2013-10-23 凸版印刷株式会社 薄膜トランジスタ
GB0706653D0 (en) * 2007-04-04 2007-05-16 Cambridge Display Tech Ltd Organic thin film transistors
KR100873997B1 (ko) 2007-06-12 2008-12-17 한국화학연구원 수분 차단 특성이 개선된 유기보호막을 적용한 유기박막트랜지스터의 제조방법
EP2183781B1 (en) * 2007-06-28 2012-10-24 3M Innovative Properties Company Method for forming gate structures
EP2063471B1 (en) 2007-11-26 2012-10-03 Hitachi Ltd. Organic field effect transistor
JP5380831B2 (ja) * 2007-12-07 2014-01-08 株式会社リコー 有機トランジスタ及びその製造方法
WO2009079150A1 (en) * 2007-12-17 2009-06-25 3M Innovative Properties Company Solution processable organic semiconductors based on anthracene
US7968871B2 (en) * 2008-04-11 2011-06-28 Xerox Corporation Organic thin film transistor
US8754683B2 (en) * 2008-06-18 2014-06-17 Micron Technology, Inc. Locked-loop quiescence apparatus, systems, and methods
JP2011524908A (ja) * 2008-06-19 2011-09-08 スリーエム イノベイティブ プロパティズ カンパニー 溶液処理可能な有機半導体
KR101004734B1 (ko) * 2008-07-29 2011-01-04 한국전자통신연구원 표면 에너지 제어를 이용한 유기 박막 트랜지스터 제조방법
US20100032654A1 (en) * 2008-08-11 2010-02-11 Motorola, Inc. Semiconductor Device Having Silane Treated Interface
JP4844767B2 (ja) 2008-10-03 2011-12-28 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
US8106387B2 (en) * 2008-10-14 2012-01-31 Xerox Corporation Organic thin film transistors
DE102009047315A1 (de) * 2009-11-30 2011-06-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Organischer Feldeffekttransistor und Verfahren zur Herstellung desselben
US8878165B2 (en) * 2010-02-25 2014-11-04 Merck Patent Gmbh Electrode treatment process for organic electronic devices
FR2960703B1 (fr) * 2010-05-28 2012-05-18 Commissariat Energie Atomique Dispositif optoelectronique avec electrode enterree
CN102683591A (zh) * 2011-03-10 2012-09-19 中国科学院微电子研究所 一种制备有机场效应晶体管结构的方法
CN102723439A (zh) * 2011-03-29 2012-10-10 中国科学院微电子研究所 基于有机场效应晶体管的存储单元、存储器及其制备方法
JP2012089857A (ja) * 2011-11-28 2012-05-10 Dainippon Printing Co Ltd パターン形成体の製造方法、および有機薄膜トランジスタ
JP6287839B2 (ja) * 2012-08-06 2018-03-07 株式会社ニコン 基板処理装置
CN203894790U (zh) * 2013-04-11 2014-10-22 德昌电机(深圳)有限公司 智能卡、身份识别卡、银行卡及智能卡触板
GB201407956D0 (en) * 2014-05-06 2014-06-18 Isis Innovation Vacuum deposited modification of polymer surfaces
US9701698B2 (en) 2014-06-13 2017-07-11 The Chinese University Of Hong Kong Self-assembled monolayers of phosphonic acids as dielectric surfaces for high-performance organic thin film transistors
US9976975B2 (en) * 2015-07-24 2018-05-22 King Abdulaziz University Method of making thin film humidity sensors
CN105140261B (zh) 2015-07-28 2018-09-11 京东方科技集团股份有限公司 有机薄膜晶体管及其制备方法、阵列基板及显示装置
US10134995B2 (en) 2016-01-29 2018-11-20 University Of Kentucky Research Foundation Water processable N-type organic semiconductor
CN109515020B (zh) * 2017-09-18 2021-03-23 云谷（固安）科技有限公司 喷墨打印方法
CN109713125A (zh) * 2018-12-27 2019-05-03 广州天极电子科技有限公司 一种晶体管及其制备方法
CN113488591B (zh) * 2021-07-05 2024-11-08 南京大学 一种平面型无寄生电容的有机场效应晶体管及其制作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB680343A (en) 1949-07-25 1952-10-01 C D Patents Ltd Improvements in or relating to the manufacture of synthetic resins from aromatic substituted olefinic hydrocarbons
US4539061A (en) * 1983-09-07 1985-09-03 Yeda Research And Development Co., Ltd. Process for the production of built-up films by the stepwise adsorption of individual monolayers
US5079179A (en) 1987-10-09 1992-01-07 Hughes Aircraft Company Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
US5667542A (en) * 1996-05-08 1997-09-16 Minnesota Mining And Manufacturing Company Antiloading components for abrasive articles
US5965679A (en) 1996-09-10 1999-10-12 The Dow Chemical Company Polyphenylene oligomers and polymers
DE19815220C2 (de) * 1998-03-27 2003-12-18 Univ Dresden Tech Verfahren zur haftfesten und dichten chemischen oder galvanischen Metallisierung von Substraten sowie Haftvermittler zur Durchführung des Verfahrens
EP1093663A2 (en) 1998-06-19 2001-04-25 Thin Film Electronics ASA Integrated inorganic/organic complementary thin-film transistor circuit
US6351036B1 (en) * 1998-08-20 2002-02-26 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with a barrier film and process for making same
US6252245B1 (en) 1999-03-29 2001-06-26 Howard Edan Katz Device comprising n-channel semiconductor material
US6265243B1 (en) 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
NO312867B1 (no) * 1999-06-30 2002-07-08 Penn State Res Found Anordning til elektrisk kontaktering eller isolering av organiske eller uorganiske halvledere, samt fremgangsmåte til densfremstilling
US6338988B1 (en) * 1999-09-30 2002-01-15 International Business Machines Corporation Method for fabricating self-aligned thin-film transistors to define a drain and source in a single photolithographic step
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100777162B1 (ko) * 2005-07-06 2007-12-03 양재우 저전압 유기나노트랜지스터 소자 및 그의 제조방법
KR100730159B1 (ko) * 2005-11-10 2007-06-19 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이를 구비한 평판표시장치, 상기유기 박막 트랜지스터의 제조방법
KR100772662B1 (ko) * 2006-02-01 2007-11-02 학교법인 포항공과대학교 전계 효과 전하 이동도를 증가시킬 수 있는 유기 박막트랜지스터 및 그 제조방법
KR100858930B1 (ko) * 2006-02-24 2008-09-17 고려대학교 산학협력단 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
KR101275999B1 (ko) * 2006-09-22 2013-06-19 엘지디스플레이 주식회사 박막트랜지스터, 이를 구비하는 표시장치 및 이들의 제조방법
KR100858928B1 (ko) * 2007-02-20 2008-09-17 고려대학교 산학협력단 유기박막 트랜지스터의 제조방법 및 그 방법에 의하여제조된 유기박막 트랜지스터
US10991894B2 (en) 2015-03-19 2021-04-27 Foundation Of Soongsil University-Industry Cooperation Compound of organic semiconductor and organic semiconductor device using the same
KR20180001482A (ko) * 2016-06-27 2018-01-04 숭실대학교산학협력단 유기 반도체 소자의 제조 방법
WO2018004219A3 (ko) * 2016-06-27 2018-02-22 숭실대학교 산학협력단 유기 반도체 소자의 제조 방법
CN109643760A (zh) * 2016-06-27 2019-04-16 崇实大学校产学协力团 有机半导体器件的制造方法
US10529937B2 (en) 2016-06-27 2020-01-07 Foundation Of Soongsil University-Industry Cooperation Method of manufacturing organic semiconductor device
CN109643760B (zh) * 2016-06-27 2023-05-23 崇实大学校产学协力团 有机半导体器件的制造方法
WO2018004093A1 (ko) * 2016-06-30 2018-01-04 숭실대학교산학협력단 유기 반도체 소자 및 그 제조 방법

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