KR20030063479A - 기판 가열 장치 및 그 세정 방법 - Google Patents
기판 가열 장치 및 그 세정 방법 Download PDFInfo
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- KR20030063479A KR20030063479A KR10-2003-7008717A KR20037008717A KR20030063479A KR 20030063479 A KR20030063479 A KR 20030063479A KR 20037008717 A KR20037008717 A KR 20037008717A KR 20030063479 A KR20030063479 A KR 20030063479A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Abstract
Description
Claims (15)
- 처리 용기내에 있어서 가열 수단을 구비한 탑재대에 탑재된 기판을 가열하는 기판 가열 장치에 있어서,상기 탑재대를 지지하는 지지 구조는,제 1 재료로 구성되고, 상기 탑재대를 지지하는 지지부와,상기 제 1 재료와는 상이한 제 2 재료로 구성되고, 상기 지지부와 상기 처리 용기를 밀봉하는 밀봉부와,상기 지지부와 상기 밀봉부를 기밀하게 접합하는 접합부를 구비한 것을 특징으로 하는기판 가열 장치.
- 제 1 항에 있어서,상기 밀봉부는 열 응력 변화 가능한 것을 특징으로 하는기판 가열 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 지지부와 상기 처리 용기 사이에는 단열재가 개재되어 있는 것을 특징으로 하는기판 가열 장치.
- 제 3 항에 있어서,상기 단열재는 상기 밀봉부의 열 응력 변화에 관계없이 상기 지지부의 높이를 규정하는 것을 특징으로 하는기판 가열 장치.
- 제 1 항 내지 제 4 항중 어느 한 항에 있어서,상기 접합부는 상기 제 1 재료와 상기 제 2 재료를 확산 접합하는 것을 특징으로 하는기판 가열 장치.
- 제 1 항 내지 제 4 항중 어느 한 항에 있어서,상기 접합부는 상기 제 1 재료와 상기 제 2 재료를 납땜 접합하는 것을 특징으로 하는기판 가열 장치.
- 처리 용기내에 있어서 가열 수단을 구비한 탑재대에 탑재된 기판을 가열하는 기판 가열 장치에 있어서,상기 탑재대를 지지하는 지지 기구는,상기 탑재대를 지지하는 지지부와,상기 지지부와 상기 처리 용기 사이에 개재되는 단열재와,상기 지지부와 상기 처리 용기를 밀봉하는 밀봉부를 구비한 것을 특징으로 하는기판 가열 장치.
- 제 7 항에 있어서,상기 밀봉부는 O링인 것을 특징으로 하는기판 가열 장치.
- 처리 용기내에 있어서 가열 수단을 구비한 탑재대에 탑재된 기판을 가열하는 기판 가열 장치에 있어서,상기 탑재대를 지지하는 동시에, 상기 가열 수단으로의 전력 공급 수단이 설치되어 있는 지지 구조의 내부는 기밀하게 밀봉되어 있는 것을 특징으로 하는기판 가열 장치.
- 제 9 항에 있어서,상기 지지 구조의 내부를 진공 배기하는 배기 수단이 설치되어 있는 것을 특징으로 하는기판 가열 장치.
- 제 9 항 또는 제 10 항에 있어서,상기 지지 구조의 내부를 세정하기 위한 세정 수단이 설치되어 있는 것을 특징으로 하는기판 가열 장치.
- 처리 용기내에 있어서 가열 수단을 구비한 탑재대에 탑재된 기판을 가열하는 기판 가열 장치로서, 상기 탑재대를 지지하는 동시에, 상기 가열 수단으로의 전력 공급 수단이 설치되어 있는 지지 구조의 내부는 기밀하게 밀봉되어 있고, 또한 상기 지지 구조의 내부를 진공 배기하는 배기 수단과, 상기 지지 구조 내부를 세정하는 세정 수단을 구비한 기판 가열 장치의 세정 방법에 있어서,상기 배기 수단에 의해 상기 지지 구조 내부를 진공 배기한 후에, 상기 세정 수단에 의해 상기 지지 구조 내부를 세정하는 것을 특징으로 하는기판 가열 장치의 세정 방법.
- 처리 용기와,이 처리 용기내에 배치되고, 그 위에 웨이퍼를 탑재하는 탑재대와,상기 처리 용기내에 설치되고, 일단부가 상기 처리 용기에 설치되고, 타단부에 상기 탑재대가 고정된 통 형상의 지지부를 구비하며,상기 탑재대상의 웨이퍼를 가열하여 처리하는 기판 가열 장치에 있어서,상기 처리 용기는 개구부를 갖고,상기 지지부는, 그 통 형상의 내부를 상기 처리 용기의 개구부에 연통시킨 상태에서, 상기 개구부의 개구 가장자리부에 면 접촉에 의해 고정되며,이 개구 가장자리부에는, 이 개구부를 폐쇄하는 커버 부재가 설치되고,이 커버 부재와 상기 개구 가장자리부는 기밀하게 밀봉되어 있는 것을 특징으로 하는기판 가열 장치.
- 제 13 항에 있어서,상기 통 형상의 지지부의 내부에는, 일단부가 상기 탑재대의 히터에 접속되고, 타단부측이 상기 커버 부재를 통해 외부에 배선된 케이블이 설치되며, 이 케이블의 상기 커버 부재를 통과하는 부분은 기밀하게 밀봉되어 있는 것을 특징으로 하는기판 가열 장치.
- 처리 용기와, 이 처리 용기내에 설치된 지지체와, 이 지지체에 의해 지지되고, 그 위에 웨이퍼를 탑재하여 처리하는 판 형상의 탑재대를 구비하며, 상기 처리 용기내에서 상기 탑재대상의 웨이퍼를 가열하여 처리하는 기판 가열 장치에 있어서,상기 판 형상의 탑재대는, 그 상층부에 박막형으로 매설되어 열을 발생시키는 히터 배선 패턴과, 이 히터 배선 패턴의 하부측에 매설되어, 상기 지지체를 통해 공급되어 온 전력을 상기 히터 배선 패턴에 공급하는 박막형의 전력 공급 배선 패턴을 갖는 것을 특징으로 하는기판 가열 장치.
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JPJP-P-2001-00247048 | 2001-08-16 | ||
JP2001384649A JP4009100B2 (ja) | 2000-12-28 | 2001-12-18 | 基板加熱装置および基板加熱方法 |
JPJP-P-2001-00384649 | 2001-12-18 | ||
PCT/JP2001/011652 WO2002054469A1 (fr) | 2000-12-28 | 2001-12-28 | Dispositif de chauffage de substrat et procede de purge du dispositif |
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- 2001-12-18 JP JP2001384649A patent/JP4009100B2/ja not_active Expired - Fee Related
- 2001-12-28 DE DE60138419T patent/DE60138419D1/de not_active Expired - Lifetime
- 2001-12-28 KR KR1020087019232A patent/KR100883695B1/ko active IP Right Grant
- 2001-12-28 US US10/451,809 patent/US20040149227A1/en not_active Abandoned
- 2001-12-28 KR KR1020107007145A patent/KR101018506B1/ko active IP Right Grant
- 2001-12-28 KR KR1020037008717A patent/KR100765558B1/ko active IP Right Grant
- 2001-12-28 KR KR1020067025314A patent/KR100978965B1/ko active IP Right Grant
- 2001-12-28 WO PCT/JP2001/011652 patent/WO2002054469A1/ja active Application Filing
- 2001-12-28 KR KR1020077013007A patent/KR100886505B1/ko not_active IP Right Cessation
- 2001-12-28 EP EP01272919A patent/EP1359610B1/en not_active Expired - Lifetime
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CN110235515A (zh) * | 2017-02-01 | 2019-09-13 | 日本特殊陶业株式会社 | 保持装置 |
CN110235515B (zh) * | 2017-02-01 | 2022-04-29 | 日本特殊陶业株式会社 | 保持装置 |
Also Published As
Publication number | Publication date |
---|---|
US20040149227A1 (en) | 2004-08-05 |
KR100883695B1 (ko) | 2009-02-13 |
KR100765558B1 (ko) | 2007-10-09 |
KR100978965B1 (ko) | 2010-08-30 |
EP1359610B1 (en) | 2009-04-15 |
EP1359610A4 (en) | 2005-11-16 |
KR101018506B1 (ko) | 2011-03-03 |
EP1359610A1 (en) | 2003-11-05 |
KR20100049684A (ko) | 2010-05-12 |
WO2002054469A1 (fr) | 2002-07-11 |
KR20060130789A (ko) | 2006-12-19 |
DE60138419D1 (de) | 2009-05-28 |
US20080163818A1 (en) | 2008-07-10 |
JP2003133242A (ja) | 2003-05-09 |
KR20070067246A (ko) | 2007-06-27 |
KR20080083062A (ko) | 2008-09-12 |
JP4009100B2 (ja) | 2007-11-14 |
KR100886505B1 (ko) | 2009-03-02 |
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