DE60138419D1 - Substratheizvorrichtung - Google Patents

Substratheizvorrichtung

Info

Publication number
DE60138419D1
DE60138419D1 DE60138419T DE60138419T DE60138419D1 DE 60138419 D1 DE60138419 D1 DE 60138419D1 DE 60138419 T DE60138419 T DE 60138419T DE 60138419 T DE60138419 T DE 60138419T DE 60138419 D1 DE60138419 D1 DE 60138419D1
Authority
DE
Germany
Prior art keywords
substrate heater
heater
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60138419T
Other languages
English (en)
Inventor
Tetsuya Saito
Shigeru Kasai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60138419D1 publication Critical patent/DE60138419D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE60138419T 2000-12-28 2001-12-28 Substratheizvorrichtung Expired - Lifetime DE60138419D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000402468 2000-12-28
JP2001247048 2001-08-16
JP2001384649A JP4009100B2 (ja) 2000-12-28 2001-12-18 基板加熱装置および基板加熱方法
PCT/JP2001/011652 WO2002054469A1 (fr) 2000-12-28 2001-12-28 Dispositif de chauffage de substrat et procede de purge du dispositif

Publications (1)

Publication Number Publication Date
DE60138419D1 true DE60138419D1 (de) 2009-05-28

Family

ID=27345631

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60138419T Expired - Lifetime DE60138419D1 (de) 2000-12-28 2001-12-28 Substratheizvorrichtung

Country Status (6)

Country Link
US (2) US20040149227A1 (de)
EP (1) EP1359610B1 (de)
JP (1) JP4009100B2 (de)
KR (5) KR101018506B1 (de)
DE (1) DE60138419D1 (de)
WO (1) WO2002054469A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003253449A (ja) * 2002-02-27 2003-09-10 Sumitomo Electric Ind Ltd 半導体／液晶製造装置
JP4251887B2 (ja) * 2003-02-26 2009-04-08 東京エレクトロン株式会社 真空処理装置
US7556839B2 (en) * 2004-03-29 2009-07-07 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and apparatus for processing substrate
US8956459B2 (en) * 2005-02-23 2015-02-17 Kyocera Corporation Joined assembly, wafer holding assembly, attaching structure thereof and method for processing wafer
JP4736564B2 (ja) * 2005-06-23 2011-07-27 東京エレクトロン株式会社 載置台装置の取付構造及び処理装置
JP2009144211A (ja) * 2007-12-15 2009-07-02 Tokyo Electron Ltd 処理装置、その使用方法及び記憶媒体
JP5358956B2 (ja) * 2008-01-19 2013-12-04 東京エレクトロン株式会社 載置台装置、処理装置、温度制御方法及び記憶媒体
JP5395405B2 (ja) 2008-10-27 2014-01-22 東京エレクトロン株式会社 基板洗浄方法及び装置
JP5239988B2 (ja) * 2009-03-24 2013-07-17 東京エレクトロン株式会社 載置台構造及び処理装置
JP5570938B2 (ja) 2009-12-11 2014-08-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
CN102337511B (zh) * 2010-07-20 2014-02-26 东京毅力科创株式会社 屏蔽部件、其构成零件以及具有屏蔽部件的基板载置台
JP2013065792A (ja) * 2011-09-20 2013-04-11 Nuflare Technology Inc ヒータおよび成膜装置
CN103871928B (zh) * 2012-12-14 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 半导体设备及其加热器
DE102013113045A1 (de) 2013-11-26 2015-05-28 Aixtron Se Heizvorrichtung
DE102013113048A1 (de) * 2013-11-26 2015-05-28 Aixtron Se Heizvorrichtung für einen Suszeptor eines CVD-Reaktors
DE102013113046A1 (de) * 2013-11-26 2015-05-28 Aixtron Se Stütz- bzw. Verbindungselemente an einem Heizorgan eines CVD-Reaktors
US20150194326A1 (en) * 2014-01-07 2015-07-09 Applied Materials, Inc. Pecvd ceramic heater with wide range of operating temperatures
CN105405787B (zh) * 2014-09-11 2018-02-06 沈阳芯源微电子设备有限公司 一种能够形成密闭腔室的半导体热盘结构
TWI611043B (zh) 2015-08-04 2018-01-11 Hitachi Int Electric Inc 基板處理裝置、半導體裝置之製造方法及記錄媒體
WO2018143288A1 (ja) * 2017-02-01 2018-08-09 日本特殊陶業株式会社 保持装置
CN111321390A (zh) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 半导体加工系统及其维护方法
KR102379016B1 (ko) * 2019-10-31 2022-03-28 세메스 주식회사 지지 유닛, 이를 포함하는 기판 처리 장치 및 이를 이용하는 기판 처리 방법
KR102404571B1 (ko) * 2019-11-05 2022-06-07 피에스케이 주식회사 기판 처리 장치

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JP3553204B2 (ja) * 1995-04-28 2004-08-11 アネルバ株式会社 Ｃｖｄ装置
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JPH1136076A (ja) * 1997-07-16 1999-02-09 Tokyo Electron Ltd Ｃｖｄ成膜装置およびｃｖｄ成膜方法
KR100505310B1 (ko) * 1998-05-13 2005-08-04 동경 엘렉트론 주식회사 성막 장치 및 방법
JP3530021B2 (ja) * 1998-05-25 2004-05-24 株式会社日立製作所 真空処理装置及びその処理台
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
US6402848B1 (en) * 1999-04-23 2002-06-11 Tokyo Electron Limited Single-substrate-treating apparatus for semiconductor processing system
JP2000353665A (ja) * 1999-06-11 2000-12-19 Kokusai Electric Co Ltd 基板処理装置
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US6381873B1 (en) * 2000-08-04 2002-05-07 Vladimir Peremychtchev Method for drying a polymer coating on a substrate
JP3840990B2 (ja) * 2002-03-05 2006-11-01 住友電気工業株式会社 半導体／液晶製造装置

Also Published As

Publication number Publication date
EP1359610B1 (de) 2009-04-15
WO2002054469A1 (fr) 2002-07-11
KR101018506B1 (ko) 2011-03-03
JP4009100B2 (ja) 2007-11-14
US20040149227A1 (en) 2004-08-05
JP2003133242A (ja) 2003-05-09
KR100886505B1 (ko) 2009-03-02
KR20070067246A (ko) 2007-06-27
KR100978965B1 (ko) 2010-08-30
US20080163818A1 (en) 2008-07-10
KR100765558B1 (ko) 2007-10-09
EP1359610A1 (de) 2003-11-05
EP1359610A4 (de) 2005-11-16
KR20100049684A (ko) 2010-05-12
KR20030063479A (ko) 2003-07-28
KR100883695B1 (ko) 2009-02-13
KR20060130789A (ko) 2006-12-19
KR20080083062A (ko) 2008-09-12

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