KR20030010549A - 웨이퍼로부터 반도체 다이를 분리하는 방법 - Google Patents
웨이퍼로부터 반도체 다이를 분리하는 방법 Download PDFInfo
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- KR20030010549A KR20030010549A KR1020020044126A KR20020044126A KR20030010549A KR 20030010549 A KR20030010549 A KR 20030010549A KR 1020020044126 A KR1020020044126 A KR 1020020044126A KR 20020044126 A KR20020044126 A KR 20020044126A KR 20030010549 A KR20030010549 A KR 20030010549A
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- wafer
- die
- etching
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- channel
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- 238000000034 method Methods 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims description 25
- 229920000642 polymer Polymers 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 abstract description 20
- 235000012431 wafers Nutrition 0.000 description 115
- 239000000725 suspension Substances 0.000 description 23
- 238000000926 separation method Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 238000005520 cutting process Methods 0.000 description 13
- 238000001816 cooling Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 7
- 238000003486 chemical etching Methods 0.000 description 6
- 230000000116 mitigating effect Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
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- 238000005516 engineering process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000011236 particulate material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
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- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Abstract
Description
Claims (14)
- 상부면 및 하부면을 갖고 대응하는 다이 영역에 복수의 전기 회로를 갖는 웨이퍼로부터 다이를 분리하는 방법에 있어서,상기 웨이퍼의 다이 영역들 사이에 위치하고 상기 상부면으로부터 상기 하부면을 향하여 웨이퍼 내부로 확장하는 채널을 에칭하는 단계;상기 웨이퍼의 다이 영역의 상기 상부면상에 캐리어 테이프를 장착하는 단계; 및상기 웨이퍼의 하부면으로부터 재료를 제거하여 상기 채널을 노출시키고 상기 다이를 서로 분리시키는 단계를 포함하는 방법.
- 제1항에 있어서, 상기 웨이퍼에서 채널을 에칭하는 단계는 반응성 이온 에칭 공정을 이용하여 상기 웨이퍼의 상부면으로부터 재료를 제거하는 단계를 포함하는 방법.
- 제2항에 있어서, 상기 웨이퍼의 하부면으로부터 재료를 제거하는 단계는 적어도 하나의 연삭 및 에칭 단계를 포함하는 방법.
- 제3항에 있어서, 상기 웨이퍼의 하부면으로부터 재료를 제거하는 단계는 상기 웨이퍼의 하부면에서 등고면(contoured surface)을 에칭하는 단계를 포함하는 방법.
- 제4항에 있어서, 상기 등고면을 에칭하는 단계는 등고면을 생성하도록 상기 웨이퍼의 하부면을 선택적으로 에칭하는 단계를 포함하는 방법.
- 제5항에 있어서, 상기 웨이퍼의 하부면을 선택적으로 에칭하는 단계는,항에칭 재료를 이용하여 상기 웨이퍼의 하부면에 하나의 패턴을 도포시키는 단계; 및상기 등고면을 생성하도록 플라즈마를 이용하여 상기 하부면 패턴을 선택적으로 에칭하는 단계를 포함하는 방법.
- 제6항에 있어서, 상기 웨이퍼의 하부면에 하나의 패턴을 도포하는 단계는 상기 웨이퍼의 하부면상에 도트 패턴으로 폴리머 방울들을 분사하는 단계를 포함하는 방법.
- 제7항에 있어서, 상기 폴리머 방울들은 상기 웨이퍼의 에칭속도와 양립될 수 있는 에칭속도를 가지며, 상기 하부면 패턴을 선택적으로 에칭하는 단계는 상기 채널이 노출될 때까지 상기 하부면상에서 무지향성(non-directional) 에칭을 수행하는 단계를 포함하는 방법.
- 제1항에 있어서, 상기 웨이퍼의 하부면으로부터 재료를 제거하는 단계는 적어도 하나의 연삭 및 에칭 단계를 포함하는 방법.
- 제9항에 있어서, 상기 웨이퍼의 하부면으로부터 재료를 제거하는 단계는 상기 웨이퍼의 하부면에서 등고면을 에칭하는 단계를 포함하는 방법.
- 제10항에 있어서, 상기 등고면을 에칭하는 단계는 상기 등고면을 생성하도록 상기 웨이퍼의 하부면을 선택적으로 에칭하는 단계를 포함하는 방법.
- 제11항에 있어서, 상기 웨이퍼의 하부면을 선택적으로 에칭하는 단계는,항에칭 재료를 이용하여 상기 웨이퍼의 하부면에 하나의 패턴을 도포시키는 단계; 및상기 등고면을 생성하도록 플라즈마를 이용하여 상기 하부면 패턴을 선택적으로 에칭하는 단계를 포함하는 방법.
- 제12항에 있어서, 상기 웨이퍼의 하부면에 하나의 패턴을 도포하는 단계는 상기 웨이퍼의 하부면상에 도트 패턴으로 폴리머 방울들을 분사하는 단계를 포함하는 방법.
- 제13항에 있어서, 상기 폴리머 방울들은 상기 웨이퍼의 에칭속도와 양립될 수 있는 에칭속도를 가지며, 상기 하부면 패턴을 선택적으로 에칭하는 단계는 상기 채널이 노출될 때까지 상기 하부면상에서 무지향성 에칭을 수행하는 단계를 포함하는 방법.
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US09/917,534 US6686225B2 (en) | 2001-07-27 | 2001-07-27 | Method of separating semiconductor dies from a wafer |
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KR100817059B1 (ko) * | 2006-09-11 | 2008-03-27 | 삼성전자주식회사 | 박형 반도체 패키지 제조방법 |
KR100863333B1 (ko) * | 2007-06-27 | 2008-10-15 | 주식회사 효광 | 기판 가공 방법 및 그로써 제작되는 칩 |
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US6686225B2 (en) | 2004-02-03 |
US20030022465A1 (en) | 2003-01-30 |
JP2003086544A (ja) | 2003-03-20 |
US20040129451A1 (en) | 2004-07-08 |
KR100903472B1 (ko) | 2009-06-18 |
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